Winbond Electronics Corporation W968D6DAGX7I TR

Overview

W968D6DAGX7I TR from Winbond is a 256Mb (16M×16) CellularRAM™ pseudo-static DRAM with asynchronous, page-mode, and synchronous burst interfaces. It operates at 1.8V V_CC/V_CCQ, delivers 70ns random access time, supports 133MHz burst clocking, and integrates temperature-compensated refresh (TCR), partial array refresh (PAR), and deep power-down (DPD) for ultra-low standby current - optimized for cellular handsets and portable embedded systems requiring Flash-like interface compatibility with SRAM-like ease of use.

For engineers reviewing the W968D6DAGX7I TR datasheet, W968D6DAGX7I TR pinout, W968D6DAGX7I TR application, or W968D6DAGX7I TR equivalent, key selection considerations include its dual-mode (async/burst) timing flexibility, 54-ball VFBGA package compatibility with space-constrained PCBs, configurable drive strength and latency via BCR/RCR registers, and support for variable/fixed latency burst reads in mobile memory subsystems.

Technical Context

This device implements a DRAM core with integrated SRAM-like interface logic, enabling seamless drop-in replacement for NOR Flash or PSRAM in burst-capable memory buses. Its transparent self-refresh mechanism eliminates external controller intervention, while the Bus Configuration Register (BCR) and Refresh Configuration Register (RCR) provide software-configurable burst length (4/8/16/32/continuous), wrap mode, drive strength (full/half/quarter), latency counter (2–5 cycles), and PAR address mapping.

The architecture supports three distinct operational modes: asynchronous (ADV#-latched or CE#/WE#/OE#-controlled), page mode (16-word pages with 20ns intrapage access), and synchronous burst (CLK-driven with WAIT arbitration). Refresh collision handling is managed internally via WAIT assertion, and DPD entry/exit is triggered by CE# edge transitions after RCR[4] configuration - all compliant with CellularRAM 1.5 specification.

Key Specifications

Pinout & Package

W968D6DAGX7I TR uses a 54-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch and 6.0mm × 8.0mm footprint. The package supports standard reflow profiles and provides mechanical stability for handheld device shock/vibration requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pseudo-static RAM applications.

Compared with IS66WV25616EBLL-70BLI and MT48LC2M32B2P-6A, W968D6DAGX7I TR uniquely combines Flash-compatible burst interface, register-based power tuning, and true pseudo-static operation - delivering optimal balance of performance, simplicity, and power efficiency in mobile memory subsystems.

Availability

W968D6DAGX7I TR is available at Aetrix Electronics and suitable for mobile handset baseband, portable GPS navigation units, smart wearable display controllers, and industrial telematics modules requiring stable component supply across long production lifecycles.

Supply support for W968D6DAGX7I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, NAND Flash, and CellularRAM products for mobile, automotive, and industrial markets.

W968D6DAGX7I TR belongs to Winbond's CellularRAM™ family - engineered specifically to bridge the gap between NOR Flash interface simplicity and DRAM density/cost, targeting battery-powered portable devices needing reliable, low-power, high-bandwidth memory.

FAQ

What interface protocols does the W968D6DAGX7I TR support?

The W968D6DAGX7I TR supports three distinct interface modes: asynchronous (SRAM-like with CE#/OE#/WE#), page mode (16-word pages with 20ns intrapage access), and synchronous burst (CLK-driven with WAIT arbitration). It is fully compliant with the CellularRAM 1.5 specification, enabling direct compatibility with burst-mode Flash memory controllers. The device does not support DDR, LPDDR, or serial interfaces - its design centers exclusively on parallel bus integration with minimal controller changes.

How is deep power-down (DPD) entered and exited on the W968D6DAGX7I TR?

DPD is entered by writing RCR[4] = 0 (via CRE-enabled write to Refresh Configuration Register) followed by transitioning CE# from LOW to HIGH. The device remains in DPD until CE# returns LOW, at which point it resumes normal operation after internal stabilization. During DPD, current drops to ~25μA typical, and all internal operations - including refresh - halt. The W968D6DAGX7I TR does not require additional commands or timing delays beyond this CE# edge transition to exit DPD.

Can the W968D6DAGX7I TR operate without using the CLK and ADV# pins?

Yes - the W968D6DAGX7I TR supports full asynchronous and page-mode operation with CLK and ADV# permanently tied to VSS. In these modes, WAIT is asserted but must be ignored per datasheet guidance. This configuration eliminates clock distribution complexity and reduces pin count, making the W968D6DAGX7I TR suitable for legacy SRAM-based designs upgrading to higher density without modifying controller logic.

What is the purpose of the CRE pin on the W968D6DAGX7I TR?

The CRE (Control Register Enable) pin on the W968D6DAGX7I TR enables access to internal configuration registers - specifically the Bus Configuration Register (BCR), Refresh Configuration Register (RCR), and Device Identification Register (DIDR). When CRE is HIGH, standard READ/WRITE cycles target these registers instead of the memory array. This allows runtime adjustment of burst parameters, drive strength, latency, and power modes without resetting the W968D6DAGX7I TR or halting memory operations.

Does the W968D6DAGX7I TR require external refresh circuitry?

No - the W968D6DAGX7I TR incorporates transparent self-refresh logic that executes autonomously without external commands or controller intervention. Refresh cycles occur invisibly during idle bus periods, and their frequency is dynamically adjusted via on-chip temperature sensing (TCR). The system memory controller treats the W968D6DAGX7I TR as a pseudo-static device, eliminating the need for refresh timers, counters, or dedicated refresh cycles in firmware or hardware design.