Winbond Electronics Corporation W9712G6KB25I
- Part No.:
- W9712G6KB25I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W9712G6KB25I.pdf
- Description:
- IC DRAM 128MBIT PAR 84TFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W9712G6KB25I from Winbond Electronics is a 128M-bit DDR2 SDRAM organized as 2,097,152 words × 4 banks × 16 bits, operating at up to 800 MT/s (DDR2-800) with CAS latency options of 3–6 and industrial temperature support (−40°C to +95°C). It features SSTL_18 interface, on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and auto-precharge for embedded control, networking, and industrial HMI systems.
For engineers reviewing the W9712G6KB25I datasheet, W9712G6KB25I pinout, W9712G6KB25I application, or W9712G6KB25I equivalent, key selection criteria include DDR2-800 timing compliance (5-5-5/6-6-6), TFBGA-84 ball layout, VDD/VDDQ = 1.8 V ± 0.1 V operation, ODT programmability, and industrial-grade thermal reliability.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned for reads and center-aligned for writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling precise timing at 250 MHz (tCK = 4 ns min for CL=5).
Functional control includes mode register (MR) and extended mode registers (EMR1–EMR3) for configuring burst length (4/8), additive latency (AL), ODT states, OCD calibration, and DLL enable/disable. Power management supports precharged/active power down, self-refresh (IDD6 ≤ 6 mA), and burst refresh (IDD5B ≤ 80 mA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 Mbit (2M × 4 banks × 16-bit) |
| Data Rate | 800 MT/s (DDR2-800), tCK(min) = 2.5 ns @ CL=6 |
| CAS Latency | Programmable CL = 3, 4, 5, or 6 - determines minimum read access delay in clock cycles |
| Burst Length | 4 or 8 - defines number of consecutive data transfers per read/write command |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - requires tight regulation for signal integrity and timing margin |
| Operating Temp | −40°C ≤ TCASE ≤ 95°C - validated for industrial environments with doubled refresh at high temp |
| Package | TFBGA-84 (8 mm × 12.5 mm) - RoHS-compliant, lead-free, with isolated VSSQ/VDDQ planes |
Pinout & Package
W9712G6KB25I uses a TFBGA-84 package with 8×12.5 mm² footprint and 0.8 mm ball pitch. Ball assignments follow JEDEC-standard DDR2 layout with dedicated VSSQ/VDDQ planes for I/O noise isolation and separate VDDL/VSSDL for DLL power integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | Row/column address bus; A10 controls auto-precharge, A12 used only for MRS/EMRS |
| BA0–BA1 | Bank Select | Selects one of four internal banks for active/read/write/precharge commands |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; matched loading for DQS/DM timing alignment |
| UDQS/UDQS, LDQS/LDQS | Differential Data Strobes | Upper/lower byte source-synchronous strobes; enabled via EMR(1) A10 bit |
| ODT | On-Die Termination Control | Active-HIGH signal enabling internal termination resistors for stub-free point-to-point routing |
| CKE | Clock Enable | Gates internal clock tree; LOW disables all operations and enters power-down modes |
| CS, RAS, CAS, WE | Command Inputs | Encoded command bus sampled on CLK/CLK crossing; CS enables rank selection |
| VREF | Input Reference Voltage | Tracks VDDQ/2 ± 300 mV; critical for SSTL_18 input threshold stability |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable pull-up/pull-down resistors reduce external termination components and improve signal integrity on high-speed traces |
| Off-Chip Driver (OCD) Calibration | Dynamic impedance matching between DRAM output drivers and PCB trace impedance minimizes reflections during write bursts |
| Posted CAS with Additive Latency | AL + CL read latency decouples command bus occupancy from data return, increasing command bandwidth efficiency |
| Auto-Precharge | Automatic bank precharge after burst completes eliminates explicit PRE command overhead and simplifies controller logic |
| Differential Clock & Strobe Interface | CLK/CLK differential pair and DQS/DQS strobes provide robust jitter tolerance and skew immunity at 400 MHz clock frequency |
Applications
| Industrial HMI Controllers | Network Switching ASIC Buffers |
|---|---|
Use Scenario: Touchscreen-based human-machine interface in factory automation panels requiring local frame buffer and configuration storage. IC Role / Device Role / Timing Role: DDR2 SDRAM serving as display frame buffer and firmware scratchpad memory with deterministic 800 MT/s burst throughput. Use Value: Industrial temperature rating (−40°C to +95°C) ensures reliable operation in uncontrolled cabinet environments without forced cooling. | Use Scenario: Packet buffering in Layer 2/3 Ethernet switches handling 1 Gbps+ line rates with real-time traffic shaping. IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet memory supporting concurrent read-modify-write operations across multiple ports. Use Value: Programmable ODT and OCD calibration maintain signal integrity across variable trace lengths and multi-drop topologies. |
| Medical Imaging Front-End Processors | Automotive ADAS Camera Modules |
Use Scenario: Real-time image preprocessing in portable ultrasound devices where compact size and thermal resilience are critical. IC Role / Device Role / Timing Role: Frame buffer for raw sensor data ingestion and intermediate processing results with burst-length-8 efficiency. Use Value: TFBGA-84 package enables dense PCB layouts while VSSQ/VDDQ isolation reduces crosstalk in mixed-signal imaging subsystems. | Use Scenario: Vision processing pipeline in rear-view or surround-view camera ECUs operating under engine bay thermal stress. IC Role / Device Role / Timing Role: Low-power DDR2 memory for temporary image storage and histogram computation before CAN FD transmission. Use Value: Self-refresh current ≤ 6 mA at 95°C extends battery runtime during vehicle sleep mode without compromising thermal safety. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M16HR-25E | Same density, speed grade, and TFBGA-84 package; supports CL=4–6 but lacks OCD calibration and has higher IDD0 (75 mA vs. 70 mA) | Designed for telecom infrastructure; tighter tRCD/tRP specs but no industrial temp guarantee beyond 85°C | Preferred when JEDEC-compliant reference design validation is required over OCD tuning flexibility |
| IS42S16160F-6BL | Identical 128M×16 organization and -6 speed grade (DDR2-667); different TFBGA-84 pinout (no UDQS/LDQS differential strobes) | Targeted at cost-sensitive consumer electronics; no ODT programmability and limited AL support (AL=0 only) | Appropriate for legacy designs where DDR2-667 bandwidth suffices and differential DQS is not needed |
Compared with MT47H128M16HR-25E and IS42S16160F-6BL, W9712G6KB25I uniquely combines industrial temperature operation, OCD calibration, and full DDR2-800 (5-5-5/6-6-6) compliance in a single TFBGA-84 package-making it optimal for thermally demanding embedded systems requiring signal integrity tuning and long-term supply stability.
Availability
W9712G6KB25I is available at Aetrix Electronics and suitable for industrial HMI controllers, network switching ASIC buffers, and medical imaging front-end processors requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W9712G6KB25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W97 series DDR2 SDRAM product line is engineered for high-reliability embedded applications requiring extended temperature operation, low-power self-refresh, and advanced signal integrity features like OCD and ODT.
FAQ
What is the maximum supported data rate for W9712G6KB25I?
W9712G6KB25I supports up to 800 MT/s (DDR2-800), corresponding to a minimum clock period (tCK) of 2.5 ns at CAS latency 6. This is validated across the full industrial temperature range (−40°C to +95°C) with appropriate refresh rate doubling above 85°C. The W9712G6KB25I achieves this using a DLL-synchronized interface and SSTL_18 signaling.
Does W9712G6KB25I support differential DQS operation?
Yes, W9712G6KB25I supports differential DQS operation via UDQS/UDQS and LDQS/LDQS ball pairs. This mode is enabled by setting A10 = HIGH in the Extended Mode Register 1 (EMR1) command. When active, both upper and lower byte strobes operate differentially for improved noise immunity and timing margin in high-speed layouts.
What is the purpose of the VDDL and VSSDL pins on W9712G6KB25I?
VDDL and VSSDL supply dedicated power and ground to the internal delay-locked loop (DLL) circuitry in W9712G6KB25I. Isolating the DLL's supply improves jitter performance and phase alignment stability between DQ and DQS signals. These pins must be decoupled independently from VDD/VSS and VDDQ/VSSQ to maintain DLL accuracy across temperature and voltage variations.
How does W9712G6KB25I handle refresh at elevated temperatures?
At case temperatures above 85°C, W9712G6KB25I requires doubling the refresh frequency to maintain data retention - reducing tREFI from 15.6 µS to 7.8 µS (32 ms interval). This is implemented by setting A7 = "1" in EMR(2), which enables high-temperature self-refresh mode. The W9712G6KB25I remains fully functional in self-refresh with IDD6 ≤ 6 mA even at 95°C.
Can W9712G6KB25I be used as a drop-in replacement for W9712G6KB-25?
No - W9712G6KB25I is not a drop-in replacement for W9712G6KB-25. While both share identical electrical specifications and pinout, the W9712G6KB25I is qualified for −40°C to +95°C operation with enhanced thermal refresh behavior and stricter AC parameter validation across that full range. System-level validation is required to confirm timing margins and power delivery stability under industrial thermal profiles.
W9712G6KB25I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 128Mbit
- Memory Organization:
- 8M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-TFBGA (8x12.5)
W9712G6KB25I FAQ
1.How can I place an order for W9712G6KB25I through Aetrix?
Please submit a Request for Quotation (RFQ) for W9712G6KB25I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9712G6KB25I reliable?
The price and inventory of W9712G6KB25I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9712G6KB25I is usually 5 days.
3.What payment methods are accepted for W9712G6KB25I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9712G6KB25I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9712G6KB25I?
W9712G6KB25I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9712G6KB25I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9712G6KB25I?
For technical support, including W9712G6KB25I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9712G6KB25I requirements.
6.How does Aetrix verify that W9712G6KB25I is sourced from the original manufacturer or authorized distributors?
All W9712G6KB25I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9712G6KB25I meets industry standards.
7.What is the process for return or replacement of W9712G6KB25I?
All W9712G6KB25I units undergo pre-shipment inspection (PSI). If there is an issue with W9712G6KB25I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9712G6KB25I part is unused and in its original packaging.
Return procedure for W9712G6KB25I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9712G6KB25I Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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