Winbond Electronics Corporation W9712G6KB25I TR

Overview

W9712G6KB25I TR from Winbond Electronics is a 128M-bit DDR2 SDRAM organized as 2,097,152 words × 4 banks × 16 bits, operating at up to 800 MT/s (DDR2-800) with CAS latency options of 3–6 and industrial temperature range support (−40°C to +95°C). It features on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and SSTL_18 interface for high-signal-integrity memory subsystems in embedded controllers and networking equipment.

For engineers reviewing the W9712G6KB25I TR datasheet, W9712G6KB25I TR pinout, W9712G6KB25I TR application, or W9712G6KB25I TR equivalent, key selection criteria include its industrial-grade thermal rating, TFBGA-84 package compatibility, DDR2-800 timing compliance (5-5-5/6-6-6), ODT programmability, and dual-data-rate burst operation with auto-precharge support.

Technical Context

This DDR2 SDRAM uses differential clock inputs (CLK/CLK̅) synchronized with command/address latching at clock crossings, and source-synchronous DQS/DQS̅ strobes edge-aligned for reads and center-aligned for writes. Its DLL aligns DQ and DQS transitions to minimize skew across data valid windows.

The device implements four independent banks with bank-select inputs (BA0/BA1), supports posted CAS with additive latency (AL = 0–2), and enforces tRCD ≥ 12.5 ns and tRP ≥ 12.5 ns for DDR2-800 operation. Refresh intervals are temperature-dependent: 15.6 µS at ≤85°C and 7.8 µS at 85–95°C when EMR(2) A7=1 enables high-temp self-refresh mode.

Key Specifications

Pinout & Package

W9712G6KB25I TR is packaged in a lead-free, RoHS-compliant TFBGA-84 (8 mm × 12.5 mm) with 0.8 mm ball pitch. Ball layout follows JEDEC MO-270AB standard with dedicated VSSQ/VDDQ planes for I/O noise isolation and separate VDDL/VSSDL for DLL power integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H128M16HR-25E and IS42S16160F-6BLI, W9712G6KB25I TR uniquely combines DDR2-800 performance, full industrial temperature qualification to +95°C, and TFBGA-84 compactness-making it optimal for space-constrained, thermally demanding embedded systems where both speed and reliability are non-negotiable.

Availability

W9712G6KB25I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9712G6KB25I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W9712G6KB25I TR belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-sensitive, thermally robust embedded systems requiring JEDEC-compliant DDR2 performance without premium pricing or extended lead times.

FAQ

What is the maximum supported data rate for W9712G6KB25I TR?

W9712G6KB25I TR supports up to 800 MT/s (DDR2-800), corresponding to a minimum clock period (tCK) of 2.5 ns at CAS latency 6. This rating is fully validated over the industrial temperature range of −40°C to +95°C, with timing parameters including tRCD ≥ 12.5 ns and tRP ≥ 12.5 ns meeting JEDEC DDR2-800 (5-5-5/6-6-6) specifications.

Does W9712G6KB25I TR support on-die termination (ODT)?

Yes, W9712G6KB25I TR supports programmable on-die termination via the ODT pin and Extended Mode Register 1 (EMR(1)). When ODT is asserted HIGH, internal termination resistors are enabled on DQ/DQS lines to suppress reflections and improve signal integrity-critical for high-speed DDR2 layouts. Resistance values are configurable per JEDEC specification and require proper EMR(1) initialization during power-up.

What package type and ball count does W9712G6KB25I TR use?

W9712G6KB25I TR uses a lead-free, RoHS-compliant TFBGA-84 package measuring 8 mm × 12.5 mm with 0.8 mm ball pitch. The 84-ball layout includes dedicated VSSQ/VDDQ planes for I/O noise isolation and separate VDDL/VSSDL pins for DLL power integrity, conforming to JEDEC MO-270AB mechanical standards.

How is refresh handled in W9712G6KB25I TR at elevated temperatures?

At case temperatures above 85°C (up to +95°C), W9712G6KB25I TR requires doubling the auto-refresh frequency to maintain data retention-achieving a 7.8 µS refresh interval (tREFI) by setting EMR(2) bit A7=1. This high-temp refresh mode is mandatory for reliable operation at 95°C and is explicitly validated in the datasheet's electrical characteristics table under "85°C < TCASE ≤ 95°C" conditions.

Can W9712G6KB25I TR operate with single-ended DQS signaling?

Yes, W9712G6KB25I TR supports both differential and single-ended DQS modes. Differential mode (using UDQS/UDQS̅ and LDQS/LDQS̅) is enabled by setting EMR(1) A10=1; otherwise, single-ended DQS operation is used. The device automatically adapts strobe alignment-edge-aligned for reads and center-aligned for writes-in either configuration, ensuring timing compliance across both modes.