Winbond Electronics Corporation W9712G6KB-25 TR
- Part No.:
- W9712G6KB-25 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W9712G6KB-25 TR.pdf
- Description:
- IC DRAM 128MBIT PAR 84TFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W9712G6KB-25 TR from Winbond Electronics is a 128M-bit DDR2 SDRAM organized as 2M words × 4 banks × 16 bits, supporting DDR2-800 (5-5-5/6-6-6) operation at 400 MHz clock frequency with CAS Latency 3–6. It features SSTL_18 interface, on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and auto-precharge for embedded networking and industrial control memory subsystems.
For engineers reviewing the W9712G6KB-25 TR datasheet, W9712G6KB-25 TR pinout, W9712G6KB-25 TR application, or W9712G6KB-25 TR equivalent, key selection considerations include tRCD = 12.5 ns, tRP = 12.5 ns, tRC = 57.5 ns, IDD4R ≤ 135 mA, and TFBGA-84 ball package compatibility with JEDEC DDR2-800 timing compliance.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling stable 800 MT/s transfers.
Functional operation relies on mode register (MR) and extended mode registers (EMR1–EMR3) for configuring burst length (4/8), additive latency (AL), ODT enable/disable, OCD calibration, and DLL reset. Command decoding uses CS, RAS, CAS, WE, BA0/BA1, and address pins A0–A12 in strict JEDEC-compliant sequences.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 Mbit (2,097,152 × 4 banks × 16 bits) |
| Data Rate | 800 MT/s (DDR2-800), requiring 400 MHz differential clock input |
| CAS Latency | Programmable CL = 3, 4, 5, or 6 - directly impacts read access timing and system latency budget |
| tRCD / tRP | 12.5 ns minimum - defines shortest interval between ACTIVE and READ/WRITE or PRECHARGE commands |
| tRC | 57.5 ns minimum - constrains row cycle time for bank activation/reuse |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - mandates tight regulation and decoupling for signal integrity |
| Package | TFBGA-84 (8 mm × 12.5 mm, RoHS-compliant, lead-free) |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C - validated for commercial-grade industrial applications |
Pinout & Package
W9712G6KB-25 TR is packaged in an 84-ball TFBGA (8 mm × 12.5 mm) with ball pitch of 0.8 mm, featuring separate VDDQ/VSSQ planes for I/O noise isolation and dedicated VDDL/VSSDL for DLL power integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row/column address bus; A10 controls auto-precharge; A12 used only for MRS/EMRS |
| BA0, BA1 | Bank Select | Selects one of four internal banks for ACTIVE, READ, WRITE, or PRECHARGE commands |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; requires matched trace lengths and controlled impedance routing |
| UDQS, LDQS | Differential Data Strobe | Upper/lower byte source-synchronous strobes; edge-aligned on reads, center-aligned on writes |
| CLK, CLK | Differential Clock Input | Primary timing reference; all commands latched at crossing of CLK rising and CLK falling edges |
| ODT | On-Die Termination Control | Active-HIGH enables internal termination resistors to reduce stub reflections on DQ/DQS lines |
| CKE | Clock Enable | Asynchronous enable/disable of internal clock circuitry; LOW places device in power-down state |
| CS, RAS, CAS, WE | Command Decode Inputs | Form 4-bit command code (with BA0/BA1) to execute bank activate, read, write, precharge, refresh, etc. |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable termination resistance reduces external termination components and improves signal integrity on high-speed DQ/DQS buses |
| Off-Chip Driver (OCD) Calibration | Enables dynamic output driver impedance matching to PCB trace impedance, minimizing overshoot/undershoot |
| Posted CAS with Additive Latency | Allows command bus efficiency gain by decoupling column address transfer from CAS latency timing path |
| Auto-Precharge | Automatically issues PRECHARGE after burst read/write, reducing controller overhead and improving bandwidth utilization |
| DLL-Based Read Timing Alignment | Digital delay-locked loop synchronizes DQ and DQS edges to CLK, enabling reliable 800 MT/s operation across voltage/temperature |
Applications
| Industrial HMI Controller Memory | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time display rendering and touch response in factory-floor HMIs with deterministic latency requirements. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-A series MPU via 16-bit DDR2 bus; provides low-latency access to GUI assets and runtime variables. Use Value: CL=3/4 support and tRCD=12.5 ns enable sub-30 ns read-to-data-valid timing, meeting 60 Hz UI update deadlines without frame stutter. | Use Scenario: Temporary storage of ingress/egress Ethernet frames in Layer 2/L3 managed switches before forwarding decisions. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by multiple traffic manager engines and MAC controllers. Use Value: Auto-precharge and bank interleaving allow sustained 600+ MB/s throughput under mixed read/write loads, preventing head-of-line blocking. |
| Medical Imaging Front-End Buffer | Automotive ADAS Camera Preprocessor |
Use Scenario: Line buffering for real-time X-ray or ultrasound image sensor data prior to FPGA-based filtering and compression. IC Role / Device Role / Timing Role: High-bandwidth streaming memory between sensor interface and processing pipeline; operates in burst-read-heavy mode with minimal write activity. Use Value: 800 MT/s data rate and BL=8 support deliver >1.2 GB/s sequential read bandwidth, matching 12-bit @ 100 MSPS sensor streams. | Use Scenario: Frame storage for surround-view camera fusion in automotive parking assist systems operating at -40°C to 85°C. IC Role / Device Role / Timing Role: Temperature-stable DDR2 memory co-located with SoC; supports burst writes from MIPI CSI-2 receivers and burst reads for GPU texture fetch. Use Value: Industrial-grade (-25) speed bin guarantees tRCD/tRP ≤ 12.5 ns across full temperature range, ensuring consistent frame latency during cold-start conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M16HR-25E | Same density, 84-ball TFBGA, DDR2-800 (5-5-5); tRCD/tRP = 12.5 ns; supports 85°C max case temp but not -40°C | Designed for telecom infrastructure; tighter AC parameter tolerances and enhanced refresh robustness | Preferred for base station control plane memory where ECC and long-term reliability outweigh cost sensitivity |
| IS42S16160F-6BL | 128M-bit DDR2-667 (5-5-5); tRCD/tRP = 15 ns; same 84-ball TFBGA; supports 0°C–70°C only | Legacy industrial grade; lacks OCD calibration and advanced ODT modes present in W9712G6KB-25 TR | Suitable for cost-sensitive consumer electronics where 667 MT/s bandwidth suffices and thermal margin is ample |
Compared with MT47H128M16HR-25E and IS42S16160F-6BL, W9712G6KB-25 TR offers identical DDR2-800 timing at lower cost and includes OCD calibration for improved signal integrity on marginal layouts, while maintaining full JEDEC compliance without requiring layout rework.
Availability
W9712G6KB-25 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network switch packet buffers, medical imaging front-end buffers, and automotive ADAS camera preprocessors requiring stable component supply across commercial temperature ranges.
Supply support for W9712G6KB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W9712G6KB-25 TR belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-sensitive, high-reliability embedded systems requiring JEDEC-compliant DDR2-800 performance in compact TFBGA packaging.
FAQ
What is the maximum data rate supported by W9712G6KB-25 TR?
W9712G6KB-25 TR supports up to 800 MT/s (megatransfers per second), corresponding to a 400 MHz differential clock frequency. This is achieved under DDR2-800 (5-5-5) timing conditions with CL=5, tRCD=12.5 ns, and tRP=12.5 ns. The device maintains this rating across its specified commercial temperature range of 0°C to 85°C.
Does W9712G6KB-25 TR support on-die termination (ODT)?
Yes, W9712G6KB-25 TR supports programmable on-die termination (ODT) via the ODT pin and EMR settings. When ODT is enabled (ODT pin HIGH), internal termination resistors are activated on DQ, DQS, and DM lines to suppress signal reflections. ODT states can be dynamically controlled during operation to match different read/write phases and bus loading conditions.
What package type and ball count does W9712G6KB-25 TR use?
W9712G6KB-25 TR uses an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 mm × 12.5 mm with 0.8 mm ball pitch. It is RoHS-compliant and lead-free, with dedicated VDDQ/VSSQ and VDDL/VSSDL power/ground pairs to isolate I/O and DLL circuitry for optimal noise immunity.
Can W9712G6KB-25 TR operate at -40°C?
No, W9712G6KB-25 TR is rated for 0°C ≤ TCASE ≤ 85°C only. For extended temperature operation down to -40°C, the industrial-grade variant W9712G6KB-25I must be selected. That part is explicitly characterized and guaranteed across -40°C to 95°C with doubled refresh rate at high temperature and full AC/DC parameter compliance.
What is the purpose of OCD calibration in W9712G6KB-25 TR?
OCD (Off-Chip Driver) calibration in W9712G6KB-25 TR adjusts the output driver impedance of DQ and DQS pins to match PCB trace impedance, minimizing signal overshoot and undershoot. It is executed during initialization using EMR(1) commands and improves timing margin in high-speed layouts where trace impedance varies due to routing asymmetry or stackup changes.
W9712G6KB-25 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 128Mbit
- Memory Organization:
- 8M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-TFBGA (8x12.5)
W9712G6KB-25 TR FAQ
1.How can I place an order for W9712G6KB-25 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W9712G6KB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9712G6KB-25 TR reliable?
The price and inventory of W9712G6KB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9712G6KB-25 TR is usually 5 days.
3.What payment methods are accepted for W9712G6KB-25 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9712G6KB-25 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9712G6KB-25 TR?
W9712G6KB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9712G6KB-25 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9712G6KB-25 TR?
For technical support, including W9712G6KB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9712G6KB-25 TR requirements.
6.How does Aetrix verify that W9712G6KB-25 TR is sourced from the original manufacturer or authorized distributors?
All W9712G6KB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9712G6KB-25 TR meets industry standards.
7.What is the process for return or replacement of W9712G6KB-25 TR?
All W9712G6KB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9712G6KB-25 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9712G6KB-25 TR part is unused and in its original packaging.
Return procedure for W9712G6KB-25 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W9712G6KB-25 TR Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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