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Winbond Electronics Corporation W971GG6KB-18

Part No.:
W971GG6KB-18
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
84-TFBGA
Datasheet:
AetrixW971GG6KB-18.pdf
Description:
IC DRAM 1GBIT PAR 84WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,373

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Product details

Overview

W971GG6KB-18 from Winbond Electronics is a 1G-bit DDR2 SDRAM organized as 8M words × 8 banks × 16 bits, supporting DDR2-1066 (7-7-7) timing at 533 MHz clock frequency with 1.8 V supply. It implements differential clock inputs (CLK/CLK), bi-directional DQS strobes, on-die termination (ODT), and off-chip driver (OCD) impedance calibration for high-signal-integrity memory subsystems in embedded networking and industrial control applications.

For engineers reviewing the W971GG6KB-18 datasheet, W971GG6KB-18 pinout, W971GG6KB-18 application, or W971GG6KB-18 equivalent, key selection considerations include its -18 speed grade compliance with DDR2-1066, 84-ball WBGA package, SSTL_18 interface, CAS latency programmability (CL=3–7), and support for auto-precharge, self-refresh, and power-down modes.

Technical Context

This DDR2 SDRAM uses a double-data-rate architecture synchronized to differential CLK/CLK inputs, with all address/control latched at clock crossings and I/Os referenced to source-synchronous DQS/DQS strobes. Its internal DLL aligns DQ and DQS transitions to clock edges, enabling precise timing at 533 MHz.

The device supports programmable additive latency (AL=0–2), burst lengths of 4 or 8, write latency = read latency − 1, and on-die termination controlled via ODT pin and extended mode registers. OCD calibration allows dynamic output driver impedance tuning for improved signal integrity across varying PCB trace conditions.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1 G-bit (8,388,608 words × 8 banks × 16 bits)
Data Rate1066 Mb/sec/pin (DDR2-1066, 533 MHz clock)
CAS LatencyProgrammable CL = 3, 4, 5, 6, or 7 - determines minimum read access delay in clock cycles
Burst LengthConfigurable BL = 4 or 8 - defines number of consecutive data transfers per read/write command
Supply VoltageVDD/VDDQ/VDDL = 1.8 V ± 0.1 V - strict rail tolerance required for stable DDR2 operation
Operating Temp0°C ≤ TCASE ≤ 85°C - commercial-grade thermal envelope for industrial edge devices
Package84-ball WBGA (8 mm × 12.5 mm, RoHS-compliant, lead-free)
Interface StandardSSTL_18 - defines voltage thresholds and drive strength for reliable signal integrity

Pinout & Package

W971GG6KB-18 is packaged in an 84-ball Wafer-Level Ball Grid Array (WBGA) measuring 8 mm × 12.5 mm with pitch 0.8 mm. The package separates VDDQ/VSSQ from VDD/VSS to reduce I/O noise coupling and includes dedicated DLL power (VDDL) and ground (VSSDL) pins.

Pin/TerminalCircuit RoleDesign Meaning
A0–A12Address InputRow address (A0–A12); column address (A0–A9); A10 used for auto-precharge enable
BA0–BA2Bank SelectSelects one of eight internal banks for active/read/write/precharge commands
DQ0–DQ15Data I/O16-bit bidirectional data bus; supports byte masking via LDM/UDM
UDQS/UDQS, LDQS/LDQSDifferential Data StrobeSource-synchronous strobes for upper (DQ8–DQ15) and lower (DQ0–DQ7) bytes; edge-aligned on read, center-aligned on write
CKEClock EnableAsynchronous enable/disable of internal clock circuitry; controls power-down entry/exit
CS, RAS, CAS, WECommand InputsEncoded command bus (e.g., ACTIVE, READ, WRITE, PRECHARGE, REFRESH) sampled on CLK/CLK crossing
ODTOn-Die Termination ControlActive-HIGH signal enabling internal termination resistors to match line impedance and suppress reflections
VREFInput Reference VoltageMid-supply reference (VDDQ/2 ± 300 mV) for SSTL_18 input threshold stability

Key Features

FeatureDesign Value
DLL-based clock alignmentEnsures DQ–DQS skew < ±150 ps across process/voltage/temperature, enabling reliable 533 MHz operation
Programmable ODT & OCDDynamic on-die termination and off-chip driver impedance tuning via EMR(1), reducing external termination components and improving signal fidelity
Posted CAS with ALAdditive latency (AL = 0–2) decouples command bus utilization from data return timing, increasing effective bandwidth under burst-heavy loads
Auto-precharge capabilityHardware-triggered bank precharge after burst completion eliminates manual PRE command overhead, simplifying controller logic
Multi-power-down modesSupports both precharged and active power-down states, reducing IDD6 to ≤8 mA while preserving row activation state

Applications

Industrial PLC Memory BufferNetwork Switch Packet Buffer

Use Scenario: Real-time deterministic data buffering in programmable logic controllers handling motion control I/O and fieldbus protocol stacks.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and cyclic process data storage, interfaced to ARM Cortex-M7 or RISC-V SoC via 16-bit DDR2 bus.

Use Value: DDR2-1066 bandwidth meets 100+ Mbps EtherCAT cycle requirements; -18 grade ensures timing margin at 85°C ambient in sealed enclosures.

Use Scenario: Temporary packet storage in Layer 2/3 Ethernet switches processing 1 GbE traffic with deep buffer queues.

IC Role / Device Role / Timing Role: Shared packet buffer memory for ingress/egress queue management, accessed by switch fabric ASIC over DDR2 interface.

Use Value: 1G-bit density supports ≥128 KB per port; ODT + OCD minimizes signal reflection on multi-drop DDR2 traces across backplane PCBs.

Medical Imaging Front-End ControllerAutomotive ADAS Camera Interface

Use Scenario: High-throughput image frame buffering in ultrasound or digital X-ray acquisition systems with real-time FPGA-based preprocessing.

IC Role / Device Role / Timing Role: Frame buffer memory for raw sensor data ingestion and pixel-level correction pipelines, synchronized to FPGA DDR2 PHY.

Use Value: Burst length 8 + CL=5 enables full 1280×720 frame line buffering at >60 fps; SSTL_18 compatibility ensures noise immunity in mixed-signal medical chassis.

Use Scenario: Vision processing pipeline memory in automotive surround-view or lane-departure systems using TI TDA3x or NXP S32V234 SoCs.

IC Role / Device Role / Timing Role: Low-latency frame store for camera sensor data before ISP and CNN inference acceleration.

Use Value: Self-refresh current ≤8 mA enables power-gated operation during vehicle sleep mode; -18 grade validated for 85°C junction in dashboard-mounted ECUs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT47H128M16HR-37E1G-bit DDR2-800 (6-6-6), 84-ball FBGA, same VDDQ but higher tRC (57.5 ns vs. 58.125 ns)Lower max data rate; requires controller reconfiguration for CL=6 and reduced tCKChoose when system clock is limited to 400 MHz and thermal budget restricts to industrial temp range only
IS42S16160F-6BLI1G-bit DDR2-667 (5-5-5), 60-ball TSOP-II, 3.3 V tolerant VREF, no differential DQS supportLacks UDQS/LDQS and DLL; requires single-ended strobe design and external terminationPrefer for cost-sensitive, space-constrained designs where 533 MHz performance is unnecessary and layout simplicity outweighs bandwidth

Compared with MT47H128M16HR-37E and IS42S16160F-6BLI, W971GG6KB-18 delivers highest sustained bandwidth (1066 Mb/sec/pin), integrated differential strobes, and calibrated OCD-making it optimal for new designs targeting DDR2-1066 timing margins and signal integrity in dense, thermally constrained layouts.

Availability

W971GG6KB-18 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W971GG6KB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W971GG6KB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-optimized, high-reliability embedded systems needing JEDEC-compliant DDR2-1066 performance in compact WBGA packages.

FAQ

What is the maximum clock frequency supported by W971GG6KB-18?

W971GG6KB-18 supports a maximum clock frequency of 533 MHz, corresponding to DDR2-1066 operation (1066 Mb/sec/pin). This is validated under the -18 speed grade with tCK(min) = 1.875 ns at CL=7, and requires strict adherence to setup/hold timing relative to CLK/CLK differential crossings.

Does W971GG6KB-18 require external termination resistors?

No, W971GG6KB-18 integrates on-die termination (ODT) controlled via the ODT pin and extended mode registers, eliminating the need for external parallel termination. However, proper VREF (VDDQ/2 ± 300 mV) must be supplied externally to ensure correct SSTL_18 input threshold referencing.

How is the burst length configured for W971GG6KB-18?

Burst length for W971GG6KB-18 is set via A[2:0] bits during the Mode Register Set (MRS) command and is programmable to either 4 or 8. The device defaults to undefined after power-up, so the MRS command must be issued during initialization to configure BL before normal operation begins.

What is the purpose of the VDDL and VSSDL pins on W971GG6KB-18?

VDDL (DLL power) and VSSDL (DLL ground) provide isolated power and ground for the internal delay-locked loop circuitry. Separating DLL supply from core VDD/VSS prevents switching noise from degrading DLL jitter performance-critical for maintaining tight DQ–DQS alignment at 533 MHz operation.

Can W971GG6KB-18 operate in self-refresh mode at 85°C case temperature?

Yes, W971GG6KB-18 is rated for self-refresh current (IDD6) ≤8 mA at TCASE ≤ 85°C, as specified in the -18 speed grade datasheet. This enables low-power retention during system sleep states without external refresh controller intervention, provided VDD/VDDQ remain within 1.8 V ± 0.1 V.

W971GG6KB-18 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
84-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR2
Memory Size:
1Gbit
Memory Organization:
64M x 16
Memory Interface:
Parallel
Clock Frequency:
533 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
58.125 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
84-WBGA (8x12.5)

W971GG6KB-18 FAQ

1.How can I place an order for W971GG6KB-18 through Aetrix?

Please submit a Request for Quotation (RFQ) for W971GG6KB-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W971GG6KB-18 reliable?

The price and inventory of W971GG6KB-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG6KB-18 is usually 5 days.

3.What payment methods are accepted for W971GG6KB-18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG6KB-18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W971GG6KB-18?

W971GG6KB-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W971GG6KB-18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W971GG6KB-18?

For technical support, including W971GG6KB-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG6KB-18 requirements.

6.How does Aetrix verify that W971GG6KB-18 is sourced from the original manufacturer or authorized distributors?

All W971GG6KB-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG6KB-18 meets industry standards.

7.What is the process for return or replacement of W971GG6KB-18?

All W971GG6KB-18 units undergo pre-shipment inspection (PSI). If there is an issue with W971GG6KB-18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W971GG6KB-18 part is unused and in its original packaging.

Return procedure for W971GG6KB-18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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