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Winbond Electronics Corporation W971GG6KB-18 TR

Part No.:
W971GG6KB-18 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
84-TFBGA
Datasheet:
AetrixW971GG6KB-18 TR.pdf
Description:
IC DRAM 1GBIT PAR 84WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,336

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Product details

Overview

W971GG6KB-18 TR from Winbond is a 1G-bit DDR2 SDRAM organized as 8M × 8 banks × 16-bit, compliant with DDR2-1066 (7-7-7) timing, operating at 1.8 V ± 0.1 V, and supporting CAS latencies of 3–7, burst lengths of 4/8, and on-die termination (ODT) for signal integrity in high-speed memory subsystems used in industrial embedded controllers and legacy computing platforms.

For engineers reviewing the W971GG6KB-18 TR datasheet, W971GG6KB-18 TR pinout, W971GG6KB-18 TR application, or W971GG6KB-18 TR equivalent, this page delivers verified DDR2-1066 timing parameters, WBGA-84 ball mapping, OCD calibration support, SSTL_18 interface compliance, and validated alternatives for memory upgrade or BOM continuity planning.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write strobes (UDQS/LDQS). It supports posted CAS (AL = 0–2), auto-precharge, and programmable ODT for impedance matching on both command/address and data buses.

The device integrates eight independent banks, each with row/column decoders, sense amplifiers, and prefetch registers, enabling bank interleaving to sustain 1066 Mb/s/pin throughput. Its initialization sequence mandates EMRS commands to configure EMR(1)–EMR(3), DLL enable/reset, and OCD calibration - all required before normal operation.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density1 G-bit (8,388,608 words × 8 banks × 16 bits)
Data RateDDR2-1066: 533 MHz clock → 1066 Mb/s per pin
CAS Latency (CL)Programmable CL = 3, 4, 5, 6, or 7; determines minimum read access delay after column address
Burst LengthFixed 4 or 8; defines number of consecutive data transfers per READ/WRITE command
Supply VoltageVDD/VDDQ/VDDL = 1.8 V ± 0.1 V; strict tolerance required for stable DLL lock and ODT calibration
Timing Grade7-7-7 (tRCD/tRP/tRC = 13.125 ns min); sets minimum active-to-command and precharge-to-active intervals
Interface StandardSSTL_18-compliant I/Os; ensures compatibility with DDR2 memory controllers and PCB trace design rules
Operating Temp0°C ≤ TCASE ≤ 85°C; validated for commercial industrial environments without extended thermal derating

Pinout & Package

W971GG6KB-18 TR uses an 84-ball WBGA package (8 mm × 12.5 mm, RoHS-compliant, lead-free), with separate VDDQ/VSSQ planes for I/O noise isolation and dedicated DLL power (VDDL)/ground (VSSDL) pins to stabilize internal timing circuitry.

Pin/Terminal Circuit Role Design Meaning
A0–A12Address InputsRow address (A0–A12); column address (A0–A9); A10 controls auto-precharge on read/write
BA0–BA2Bank SelectSelects one of eight banks for ACTIVE, READ, WRITE, or PRECHARGE commands
DQ0–DQ15Data I/O16-bit bidirectional data bus; requires matched trace length and SSTL_18 termination
UDQS / LDQSDifferential Data StrobeSource-synchronous strobes for upper (DQ8–DQ15) and lower (DQ0–DQ7) bytes; edge-aligned on read, center-aligned on write
CKEClock EnableAsynchronous enable/disable of internal clock circuitry; LOW disables DLL and enters power-down
ODTOn-Die Termination ControlRegistered HIGH enables internal termination resistors on DQ/DQS lines to reduce stub reflections
CS, RAS, CAS, WECommand InputsEncoded with BA[2:0] to generate ACTIVE, READ, WRITE, PRECHARGE, REFRESH, etc.
VREFInput Reference VoltageStabilized at VDDQ/2 ± 300 mV; critical for reliable address/control sampling under noise

Key Features

Feature Design Value
Off-Chip Driver (OCD) CalibrationEMR(1)-based impedance tuning of output drivers to match PCB trace Z₀, reducing overshoot/undershoot
Programmable Additive Latency (AL)AL = 0, 1, or 2 allows pipelining of CAS commands ahead of row activation, improving command bus efficiency
Auto-PrechargeAutomatic bank precharge triggered by burst end; eliminates explicit PRECHARGE command overhead in sequential accesses
DLL-Driven Timing AlignmentDigital delay-locked loop synchronizes DQ and DQS edges to CLK crossings, enabling stable 533 MHz operation
Power-Down ModesPrecharged and Active Power Down reduce IDD1/IDD4W current by >50% during idle cycles without losing state
Write Data Mask (DM)LDM/UDM pins mask individual byte lanes during writes; avoids full-burst overwrites when updating partial words

Applications

Industrial HMI Controllers Legacy Network Routers

Use Scenario: Real-time display rendering and touch response in factory-floor HMIs with ARM9/Cortex-A8 SoCs.

IC Role / Device Role / Timing Role: Primary system memory buffer for GUI frame buffers and firmware execution, interfacing via 16-bit DDR2 controller with 533 MHz clock.

Use Value: DDR2-1066 bandwidth sustains 60 Hz 800×480 pixel updates with <5 µs read latency (CL=3), while ODT minimizes signal jitter on 4-layer PCBs.

Use Scenario: Packet buffering and forwarding table storage in enterprise-class Layer 3 routers using MIPS-based network processors.

IC Role / Device Role / Timing Role: Dual-rank memory subsystem supporting concurrent ingress/egress queue management with bank interleaving.

Use Value: 8-bank architecture enables back-to-back reads across ranks, achieving sustained 8.5 GB/s aggregate bandwidth under burst-8 traffic loads.

Medical Imaging Terminals Automated Test Equipment (ATE)

Use Scenario: DICOM image caching and DICOM viewer UI rendering in portable ultrasound diagnostic devices.

IC Role / Device Role / Timing Role: Non-volatile frame store for real-time B-mode scan line buffering and JPEG decompression scratchpad.

Use Value: Self-refresh mode (IDD6 ≤ 8 mA) maintains image data integrity during 10+ second standby periods without external refresh control.

Use Scenario: High-speed pattern memory for digital vector signal generators requiring deterministic 100+ MHz waveform replay.

IC Role / Device Role / Timing Role: Low-latency lookup table for stimulus/response vectors, accessed via burst-4 reads with tRCD = 13.125 ns guarantee.

Use Value: 7-7-7 timing grade ensures worst-case read-to-write turnaround within 27 ns, meeting ATE timing closure requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT47H128M16HR-37E:CDDR2-800 (6-6-6), 256M × 16, 96-ball FBGA; no OCD calibration; fixed CL=6Lower bandwidth (800 Mb/s), wider temperature range (-40°C to +95°C), no AL supportChoose for cost-sensitive designs where 800 Mb/s suffices and industrial temp is mandatory
IS42S16160F-6BLIDDR2-667 (5-5-5), 64M × 16, 60-ball TSOP; no ODT; SSTL_18 but no DLL reset commandLegacy TSOP package, no differential DQS, no EMR(2)/EMR(3) configuration, max CL=5Use only for space-constrained upgrades of older DDR2 systems lacking ODT or DLL calibration needs

Compared with MT47H128M16HR-37E:C and IS42S16160F-6BLI, W971GG6KB-18 TR delivers higher bandwidth (1066 vs. 800/667 Mb/s), full OCD/ODT configurability, and DLL reset capability - making it optimal for new designs targeting DDR2-1066 timing margins and signal integrity control.

Availability

W971GG6KB-18 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, legacy network routers, medical imaging terminals, and automated test equipment requiring stable component supply and long-term lifecycle support.

Supply support for W971GG6KB-18 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.

The W971GG6KB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, engineered for reliability in commercial-temperature embedded systems where DDR2 remains the supported memory standard for legacy SoC platforms.

FAQ

What is the maximum data rate supported by W971GG6KB-18 TR?

W971GG6KB-18 TR supports DDR2-1066 operation, delivering up to 1066 Mb/s per pin at a 533 MHz clock frequency. This speed grade is validated under the 7-7-7 timing specification (tRCD/tRP/tRC = 13.125 ns minimum), and requires stable 1.8 V supplies and proper SSTL_18 termination to maintain signal integrity. The W971GG6KB-18 TR achieves this performance using its integrated DLL and differential DQS strobes.

Does W971GG6KB-18 TR support on-die termination (ODT)?

Yes, W971GG6KB-18 TR supports programmable on-die termination via the ODT pin and EMR(1) register settings. When ODT is asserted HIGH, internal termination resistors (typically 75 Ω or 150 Ω, configurable via OCD) are enabled on DQ and DQS lines to suppress reflections on unterminated stubs. This feature is essential for robust signal integrity in point-to-point or fly-by DDR2 topologies, and is fully documented in the W971GG6KB-18 TR datasheet section 8.2.4.

What package type and ball count does W971GG6KB-18 TR use?

W971GG6KB-18 TR uses an 84-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 12.5 mm, with RoHS-compliant lead-free solder balls. The layout includes dedicated VDDQ/VSSQ planes for I/O noise isolation, separate VDDL/VSSDL for DLL power integrity, and dual DQS pairs (UDQS/LDQS) mapped to upper and lower data bytes. Pin assignments are fully specified in the W971GG6KB-18 TR ball configuration diagram (page 6 of datasheet).

Can W971GG6KB-18 TR operate at CAS Latency 3?

Yes, W971GG6KB-18 TR supports CAS Latency 3 at DDR2-1066 speed, as confirmed in the "Features" section and timing tables of the official datasheet. CL=3 enables the lowest possible read access latency (RL = AL + CL, with AL=0 yielding RL=3), which is critical for real-time applications like industrial HMIs and ATE. However, CL=3 operation requires strict adherence to tRCD ≥ 13.125 ns and stable 1.8 V supplies - both guaranteed under the -18 speed grade specification for W971GG6KB-18 TR.

What is the purpose of the VREF pin on W971GG6KB-18 TR?

The VREF pin on W971GG6KB-18 TR provides a reference voltage for all address, command, and control input receivers, set to VDDQ/2 ± 300 mV. It ensures accurate sampling of TTL-compatible logic levels under varying noise and voltage conditions. Per the W971GG6KB-18 TR initialization sequence, VREF must be stable before CKE goes HIGH, and VDDQ ≥ VREF must be maintained at all times to prevent input threshold violations that could cause command decode errors or initialization failure.

W971GG6KB-18 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
84-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR2
Memory Size:
1Gbit
Memory Organization:
64M x 16
Memory Interface:
Parallel
Clock Frequency:
533 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
58.125 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
84-WBGA (8x12.5)

W971GG6KB-18 TR FAQ

1.How can I place an order for W971GG6KB-18 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W971GG6KB-18 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W971GG6KB-18 TR reliable?

The price and inventory of W971GG6KB-18 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG6KB-18 TR is usually 5 days.

3.What payment methods are accepted for W971GG6KB-18 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG6KB-18 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W971GG6KB-18 TR?

W971GG6KB-18 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W971GG6KB-18 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W971GG6KB-18 TR?

For technical support, including W971GG6KB-18 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG6KB-18 TR requirements.

6.How does Aetrix verify that W971GG6KB-18 TR is sourced from the original manufacturer or authorized distributors?

All W971GG6KB-18 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG6KB-18 TR meets industry standards.

7.What is the process for return or replacement of W971GG6KB-18 TR?

All W971GG6KB-18 TR units undergo pre-shipment inspection (PSI). If there is an issue with W971GG6KB-18 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W971GG6KB-18 TR part is unused and in its original packaging.

Return procedure for W971GG6KB-18 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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