Winbond Electronics Corporation W971GG6KB-25

Overview

W971GG6KB-25 from Winbond is a 1G-bit DDR2 SDRAM organized as 8M words × 8 banks × 16 bits, supporting DDR2-800 (5-5-5 or 6-6-6) operation at 400 MHz clock frequency with CL=5 and tCK=2.5 ns. It features on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and SSTL_18 interface for high-signal-integrity memory subsystems in embedded networking and industrial control applications.

For engineers reviewing the W971GG6KB-25 datasheet, W971GG6KB-25 pinout, W971GG6KB-25 application, or W971GG6KB-25 equivalent, this page delivers verified DDR2 timing parameters, ball function mapping, ODT/OCD configuration behavior, burst interrupt support, and industrial-grade thermal compatibility (0°C to 85°C case temperature).

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling stable 400 MHz operation under DDR2-800 timing constraints (tRCD/tRP = 12.5 ns min).

The device supports programmable additive latency (AL=0–2), auto-precharge, posted CAS, and burst lengths of 4 or 8. Command decoding uses CS, RAS, CAS, WE, and BA0–BA2, while address A0–A12 selects rows/columns and A10 controls auto-precharge - all latched on CLK/CLK crossings.

Key Specifications

Pinout & Package

Packaged in 84-ball WBGA (8 mm × 12.5 mm, RoHS-compliant lead-free), with separate VDDQ/VSSQ planes for I/O noise isolation and dedicated VDDL/VSSDL for DLL power integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H128M8CF-25E and IS42S16160F-25BLI, the W971GG6KB-25 provides unique OCD calibration for dynamic output impedance matching and shares pinout compatibility with IS42S16160F-25BLI but not with Micron's FBGA layout - making it optimal for cost-sensitive commercial industrial designs needing signal integrity assurance without external components.

Availability

W971GG6KB-25 is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply, long-term lifecycle support, and guaranteed DDR2-800 timing compliance.

Supply support for W971GG6KB-25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and ISO 9001/TS 16949 certified manufacturing.

The W971GG6KB series belongs to Winbond's DDR2 SDRAM product line, engineered for cost-effective, thermally robust memory solutions in industrial and networking applications where reliability and signal integrity outweigh ultra-high bandwidth demands.

FAQ

What DDR2 speed grade does W971GG6KB-25 support?

The W971GG6KB-25 supports DDR2-800 operation with two timing bin options: 5-5-5 and 6-6-6. At CL=5, it achieves a minimum clock period (tCK) of 2.5 ns (400 MHz), meeting JEDEC DDR2-800 specification requirements for tRCD and tRP of 12.5 ns minimum. This makes W971GG6KB-25 suitable for systems requiring balanced performance and power efficiency without DDR2-1066 complexity.

Does W971GG6KB-25 support on-die termination (ODT)?

Yes, W971GG6KB-25 supports programmable on-die termination (ODT) controlled via the ODT pin. When asserted HIGH, it enables internal termination resistance on DQ, DQS, and DM lines to suppress signal reflections on unterminated or lightly loaded memory buses. ODT operation requires valid VREF tracking VDDQ/2 ±300 mV, and its timing is defined in sections 8.2.4 and 11.2–11.5 of the W971GG6KB-25 datasheet.

What is the package type and ball count of W971GG6KB-25?

W971GG6KB-25 is packaged in an 84-ball WBGA (Wafer-Level Ball Grid Array) measuring 8 mm × 12.5 mm, with RoHS-compliant lead-free construction. The ball map includes dedicated VDDQ/VSSQ planes for I/O power integrity, isolated VDDL/VSSDL for DLL circuitry, and standard DDR2 signal assignments including differential CLK/CLK, UDQS/LDQS, and BA0–BA2 bank select.

Can W971GG6KB-25 operate in self-refresh mode, and what is its current draw?

Yes, W971GG6KB-25 supports self-refresh mode to retain data during system standby. Its maximum self-refresh current (IDD6) is 8 mA at TCASE ≤ 85°C, as specified in section 4 of the datasheet. This low-power state is entered via the Self Refresh Entry command and exited with Self Refresh Exit, with timing governed by tRFC and tXS parameters to ensure data retention across thermal and voltage variations.

How does the OCD calibration feature work in W971GG6KB-25?

W971GG6KB-25 implements Off-Chip Driver (OCD) impedance calibration to dynamically match output driver strength to PCB trace impedance. Initiated during initialization (step 12 of power-up sequence), OCD adjusts DQ output impedance using EMR(1) register settings and reference resistor feedback. This ensures consistent signal rise/fall times and reduced overshoot/undershoot across process-voltage-temperature corners - a key advantage over non-OCD DDR2 devices like MT47H128M8CF-25E.