Winbond Electronics Corporation W971GG6KB25I
- Part No.:
- W971GG6KB25I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W971GG6KB25I.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 84WBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,860
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Product details
Overview
W971GG6KB25I from Winbond Electronics is a 1G-bit DDR2 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR2-800 (5-5-5 or 6-6-6) operation at 1.8 V supply, with CAS latency options of 3–7 and burst lengths of 4 or 8. It delivers up to 800 Mb/sec/pin data transfer in industrial temperature range (−40°C to +95°C), used in embedded networking and industrial control memory subsystems.
For engineers reviewing the W971GG6KB25I datasheet, W971GG6KB25I pinout, W971GG6KB25I application, or W971GG6KB25I equivalent, key selection considerations include its industrial-grade thermal rating, on-die termination (ODT), off-chip driver (OCD) impedance calibration, differential clock interface (CLK/CLK), and SSTL_18 I/O compatibility for signal integrity in high-speed memory bus designs.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write strobes (UDQS/LDQS). It supports programmable additive latency (AL = 0–2), enabling posted CAS for improved command bus efficiency.
Functional operation includes auto-precharge, self-refresh, and power-down modes (precharged and active), with ODT configurable via EMR(1) and OCD calibration supported through extended mode register commands. All control/address inputs are sampled on the crossing of CLK rising and CLK falling edges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8,388,608 words × 8 banks × 16 bits) |
| Data Rate | DDR2-800: 400 MHz clock → 800 Mb/sec/pin sustained transfer |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7 - determines minimum read access delay in clock cycles |
| Burst Length | Configurable BL = 4 or 8 - defines number of consecutive data transfers per read/write command |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - requires tight regulation for stable DDR2 timing margins |
| Operating Temperature | −40°C ≤ TCASE ≤ +95°C - qualified for industrial environments without derating |
| I/O Interface | SSTL_18 - matches JEDEC-compliant 1.8 V memory bus signaling standards |
Pinout & Package
W971GG6KB25I is packaged in an 84-ball WBGA (8 mm × 12.5 mm, RoHS-compliant, lead-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row/column address bus; A10 controls auto-precharge enable during read/write commands |
| BA0–BA2 | Bank Select | 3-bit field selecting one of eight internal banks for activation or command targeting |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; split into lower (DQ0–DQ7) and upper (DQ8–DQ15) bytes |
| UDQS / LDQS | Differential Data Strobe | Source-synchronous strobes: edge-aligned on read, center-aligned on write; enabled via EMR(1) |
| CLK / CLK | Differential Clock Input | Defines all timing; inputs latched at crossing of CLK rising and CLK falling edges |
| CKE | Clock Enable | Asynchronous enable/disable of internal clock circuitry; LOW enters power-down states |
| CS, RAS, CAS, WE | Command Inputs | Encoded command set (e.g., ACTIVE, READ, WRITE, PRECHARGE, REFRESH) with CS as rank select |
| ODT | On-Die Termination Control | Active-HIGH signal enabling internal termination resistors to reduce stub reflections on DQ/DQS lines |
| UDM / LDM | Data Mask Input | Byte-level write masking: high sample on DQS edge masks corresponding DQ byte during write |
| VREF | Input Reference Voltage | Reference for all address/control inputs; must track VDDQ/2 ±300 mV for valid logic thresholds |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable pull-up/down termination on DQ/DQS lines reduces board-level termination components and improves signal integrity |
| Off-Chip Driver (OCD) Calibration | Dynamic impedance matching of output drivers to transmission line Z₀ minimizes overshoot/undershoot in high-speed writes |
| Posted CAS with Additive Latency | AL = 0–2 allows pipelining of column commands ahead of row activation, increasing effective bandwidth utilization |
| Auto-Precharge | Automatic bank precharge triggered by burst end eliminates explicit PRECHARGE command overhead in sequential accesses |
| Self-Refresh Mode | Internal refresh controller maintains data retention with CKE LOW and minimal current (≤8 mA), critical for low-power suspend states |
Applications
| Industrial PLC Memory Buffer | Network Router Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic data buffering in programmable logic controllers handling sensor I/O and motion control loops. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and cyclic process data storage with guaranteed −40°C to +95°C operation. Use Value: Industrial temperature rating and ODT/OCD support ensure reliable 800 Mb/sec/pin throughput under voltage/thermal stress without signal integrity degradation. |
Use Scenario: Temporary storage of packet headers and payload fragments in multi-gigabit Ethernet switching ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to SERDES PHYs via SSTL_18 buses. Use Value: Posted CAS and programmable CL allow fine-grained latency tuning to match traffic burst patterns while maintaining DDR2-800 throughput. |
| Medical Imaging System Frame Store | Automated Test Equipment (ATE) Pattern Memory |
Use Scenario: Capturing and staging full-resolution ultrasound or MRI frame buffers before DSP processing. IC Role / Device Role / Timing Role: Burst-oriented frame memory supporting rapid sequential reads/writes with auto-precharge to minimize command overhead. Use Value: 16-bit bus width and BL=8 configuration deliver 128-bit wide transfers per cycle, reducing memory access count per frame. |
Use Scenario: Storing high-fidelity digital test vectors and expected response signatures in semiconductor ATE platforms. IC Role / Device Role / Timing Role: Deterministic, low-jitter memory subsystem synchronized to system clock domain using differential CLK/CLK inputs. Use Value: DLL alignment and strict tAC/tCO specs ensure sub-nanosecond timing accuracy required for <100 ps test pattern edge placement. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M16HR-25E | Same density, 16-bit bus, DDR2-800; but rated only for 0°C to +85°C (commercial grade) | Lacks industrial temperature support; unsuitable for extended ambient or sealed enclosure deployments | Select W971GG6KB25I when operating outside 0°C–85°C or requiring guaranteed −40°C startup. |
| IS42S16160F-25BLI | 1 G-bit, 16-bit DDR2-800; supports same CL/BL ranges and ODT, but uses 60-ball TSOP-II package | TSOP-II footprint incompatible with WBGA layout; higher inductance limits >400 MHz stability | Choose W971GG6KB25I for space-constrained PCBs needing 84-ball WBGA and optimized high-frequency signal routing. |
Compared with MT47H128M16HR-25E and IS42S16160F-25BLI, W971GG6KB25I uniquely combines industrial temperature qualification, WBGA packaging for high-density layouts, and full OCD/ODT configurability - making it the preferred choice for ruggedized, thermally demanding DDR2 memory subsystems where long-term reliability and signal fidelity are non-negotiable.
Availability
W971GG6KB25I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W971GG6KB25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W971GG6KB25I belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-sensitive yet thermally demanding embedded applications requiring JEDEC-compliant 1.8 V memory with robust signal integrity features.
FAQ
What is the maximum clock frequency supported by W971GG6KB25I?
W971GG6KB25I supports DDR2-800 operation, meaning a maximum input clock frequency of 400 MHz. This yields an effective data transfer rate of 800 Mt/s (megatransfers per second) due to double-data-rate architecture. The device meets JEDEC timing specifications for tCK = 2.5 ns (min) at CL = 5 and tCK = 2.5 ns (min) at CL = 6, validated across the full −40°C to +95°C case temperature range.
Does W971GG6KB25I require external termination resistors?
No - W971GG6KB25I integrates On-Die Termination (ODT) controlled via the ODT pin and extended mode registers. When ODT is asserted HIGH, internal termination resistors (typically 75 Ω or 150 Ω, configurable) are enabled on DQ and DQS lines, eliminating the need for discrete parallel termination and reducing PCB routing complexity and signal reflection.
How does the OCD calibration feature improve signal integrity in W971GG6KB25I?
OCD calibration in W971GG6KB25I dynamically adjusts the output driver impedance to match the PCB trace characteristic impedance (e.g., 50 Ω single-ended). By executing OCD calibration during initialization (per datasheet flow), W971GG6KB25I minimizes overshoot/undershoot on write data edges - critical for maintaining eye opening and timing margin at 400 MHz clock rates.
Can W971GG6KB25I operate with a single-ended clock instead of differential CLK/CLK?
No - W971GG6KB25I requires differential clock inputs (CLK and CLK) as specified in JEDEC DDR2 standard. All address and command inputs are sampled at the crossing of CLK rising and CLK falling edges. Using single-ended clocking violates timing specifications and will result in undefined behavior or initialization failure.
What is the purpose of the A10/AP pin on W971GG6KB25I?
On W971GG6KB25I, pin A10 functions as the Auto-Precharge (AP) bit during READ and WRITE commands. When A10 is driven HIGH during a burst access, the memory automatically issues a PRECHARGE command to the accessed bank upon burst completion - eliminating the need for a separate PRECHARGE instruction and improving sequential access efficiency.
W971GG6KB25I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-WBGA (8x12.5)
W971GG6KB25I FAQ
1.How can I place an order for W971GG6KB25I through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG6KB25I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG6KB25I reliable?
The price and inventory of W971GG6KB25I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG6KB25I is usually 5 days.
3.What payment methods are accepted for W971GG6KB25I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG6KB25I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG6KB25I?
W971GG6KB25I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG6KB25I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG6KB25I?
For technical support, including W971GG6KB25I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG6KB25I requirements.
6.How does Aetrix verify that W971GG6KB25I is sourced from the original manufacturer or authorized distributors?
All W971GG6KB25I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG6KB25I meets industry standards.
7.What is the process for return or replacement of W971GG6KB25I?
All W971GG6KB25I units undergo pre-shipment inspection (PSI). If there is an issue with W971GG6KB25I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG6KB25I part is unused and in its original packaging.
Return procedure for W971GG6KB25I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG6KB25I Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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