Winbond Electronics Corporation W971GG6KB25I TR

Overview

W971GG6KB25I TR from Winbond is a 1G-bit DDR2 SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR2-800 (5-5-5 or 6-6-6) operation at 400 MHz clock frequency with CL=5/6, tRCD/tRP = 12.5 ns minimum, and industrial temperature range of −40°C to +95°C. It implements on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and DLL-aligned source-synchronous DQS strobes for high-signal-integrity memory subsystems in embedded controllers and networking equipment.

For engineers reviewing the W971GG6KB25I TR datasheet, W971GG6KB25I TR pinout, W971GG6KB25I TR application, or W971GG6KB25I TR equivalent, this page delivers verified timing parameters, ball-level I/O mapping, industrial-grade thermal validation, SSTL_18 interface compliance, and functional distinctions versus DDR2-667/1066 variants - critical for DDR2 layout, initialization sequence design, and long-life industrial BOM planning.

Technical Context

This DDR2 SDRAM uses a double-data-rate architecture with differential CLK/CLK inputs and bi-directional DQS/DQS strobes aligned edge-to-read and center-to-write data. Its internal DLL synchronizes DQ and DQS transitions to the clock, while OCD calibration enables precise output driver impedance tuning (±15% of target) for impedance-matched trace routing.

The device supports programmable additive latency (AL=0–2), burst lengths of 4 or 8, posted CAS, auto-precharge, and multiple power-down modes (precharged/active). ODT control via dedicated ODT pin allows dynamic on-die termination activation during reads/writes to suppress reflections on shared DQ buses.

Key Specifications

Pinout & Package

W971GG6KB25I TR uses an 84-ball WBGA package (8 mm × 12.5 mm, 0.8 mm pitch) with separate VDD/VDDQ and VSS/VSSQ rails for analog/digital noise isolation, plus dedicated VDDL/VSSDL for DLL circuitry. Ball assignment follows JEDEC-standard DDR2 layout with address/command on inner rows and DQ/DQS on outer periphery.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H128M16HR-25E IT:C, W971GG6KB25I TR offers smaller 84-ball WBGA packaging and lower operating current, easing thermal and layout constraints; versus IS42S16160F-25BLI, it adds OCD calibration for robust signal integrity on variable-impedance PCBs - critical for high-volume industrial manufacturing.

Availability

W971GG6KB25I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W971GG6KB25I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial and automotive markets.

W971GG6KB25I TR belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for applications demanding extended temperature operation, long-term supply stability, and JEDEC-compliant signal integrity without premium pricing.

FAQ

What is the maximum clock frequency supported by W971GG6KB25I TR?

W971GG6KB25I TR supports a maximum clock frequency of 400 MHz, corresponding to DDR2-800 data rates of 800 Mb/sec/pin. This is validated across the full industrial temperature range (−40°C to +95°C) with CL=5 or CL=6 timing. The device does not support DDR2-1066 (1066 Mb/sec/pin) operation - that capability is exclusive to the -18 speed grade variant.

Does W971GG6KB25I TR require external termination resistors?

No, W971GG6KB25I TR integrates on-die termination (ODT) with selectable 75 Ω or 150 Ω resistance values activated via the ODT pin. When enabled during read or write bursts, ODT eliminates the need for external parallel termination resistors on DQ/DQS lines - reducing BOM cost, PCB area, and signal reflection risk in point-to-point or fly-by topologies.

How is OCD calibration performed for W971GG6KB25I TR?

OCD calibration for W971GG6KB25I TR is executed via Extended Mode Register Set (EMRS) commands to EMR(1), using A9/A8/A7 pins to enter and exit calibration mode. The process adjusts output driver impedance to match target PCB trace impedance within ±15%, and must be performed after DLL enable and before normal operation - typically during system initialization or runtime reconfiguration.

What is the function of the A10 pin in W971GG6KB25I TR during read/write commands?

In W971GG6KB25I TR, the A10 pin serves as the auto-precharge bit during read and write commands. When A10 is HIGH, the memory automatically issues a precharge command to the accessed bank upon burst completion; when LOW, the bank remains active for subsequent accesses. This hardware-controlled feature reduces command bus overhead and simplifies memory controller logic.

Is W971GG6KB25I TR compatible with standard DDR2 memory controllers?

Yes, W971GG6KB25I TR complies fully with JEDEC DDR2 SDRAM specification JESD79-2F, including command encoding, timing parameters (tRCD, tRP, tRFC), electrical interface (SSTL_18), and initialization sequence. It interoperates with industry-standard DDR2 controllers such as those in NXP i.MX6, Microchip PIC32MZ, and Xilinx Zynq-7000 SoCs without firmware modification.