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Winbond Electronics Corporation W971GG6NB-18
- Part No.:
- W971GG6NB-18
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W971GG6NB-18.pdf
- Description:
- IC DRAM 1GBIT SSTL 18 84TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:238
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Product details
Overview
W971GG6NB-18 from Winbond is a 1 Gbit DDR2 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR2-1066 (6-6-6) operation at 533 MHz clock frequency with CAS Latency 3–7, 1.8 V VDD/VDDQ supply, and SSTL_18 interface - deployed in embedded networking and industrial control memory subsystems requiring high-bandwidth, low-latency DRAM buffering.
For engineers reviewing the W971GG6NB-18 datasheet, W971GG6NB-18 pinout, W971GG6NB-18 application, or W971GG6NB-18 equivalent, key selection criteria include tRCD = 11.25 ns, tRP = 11.25 ns, tRC = 51.25 ns, ODT programmability, and VFBGA-84 ball mapping for PCB layout and signal integrity validation.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous data strobes (UDQS/LDQS) edge-aligned on reads and center-aligned on writes. It supports posted CAS (AL = 0–2), auto-precharge, and burst lengths of 4 or 8.
Functional operation relies on three extended mode registers (EMR1–EMR3) for configuring OCD impedance, ODT enable/disable, DLL reset, and temperature-compensated refresh; all commands are sampled on CLK/CLK crossing edges, and bank activation uses BA0–BA2 with row/column addressing via A0–A12.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (8,388,608 words × 8 banks × 16 bits) - supports 2 MB per bank in 8-bank configuration. |
| Data Rate | 1066 Mbps (DDR2-1066) - requires 533 MHz differential clock input for full-speed operation. |
| CAS Latency | CL = 3 to 7 - determines minimum read latency cycles; CL=6 yields tCK = 1.875 ns for DDR2-1066 compliance. |
| tRCD / tRP | 11.25 ns minimum - defines minimum delay between ACTIVE→READ/WRITE and PRECHARGE→ACTIVE commands. |
| Supply Voltage | VDD = VDDQ = 1.8 V ± 0.1 V - mandates tight regulation and decoupling for stable DDR2 signaling. |
| Interface Standard | SSTL_18 - requires matched-impedance routing and termination compatible with JEDEC SSTL-18 I/O. |
| Refresh Interval | tREFI = 7.8 μs at TCASE ≤ 85°C - dictates maximum time between refresh commands to retain data. |
Pinout & Package
VFBGA-84 package (8 mm × 12.5 mm, 1.0 mm thickness, window-type BGA), RoHS-compliant, lead-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row address (A0–A12) and column address (A0–A9); A10 controls auto-precharge. |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for command targeting (ACTIVE, READ, WRITE, PRECHARGE). |
| DQ0–DQ15 | Bidirectional Data Bus | 16-bit wide data path; supports burst transfers with DM masking and source-synchronous timing. |
| UDQS / LDQS | Differential Data Strobe | Upper/lower byte strobes; edge-aligned with read data, center-aligned with write data when enabled via EMR(1). |
| CLK / CLK | Differential Clock Input | Commands latched at CLK/CLK crossing; defines system timing reference for all synchronous operations. |
| ODT | On-Die Termination Control | Active-HIGH enables internal termination resistors (RZQ-based) to reduce stub reflections on DQ/DQS lines. |
| CKE | Clock Enable | Controls power-down entry/exit; LOW disables internal clocks and enters power-down mode. |
| VREF | Input Reference Voltage | Reference for address/control input thresholds; must track VDDQ/2 ±300 mV for valid logic sampling. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Latency | CL = 3–7 selectable via Mode Register - enables optimization for latency vs. timing margin trade-offs. |
| OCD Impedance Adjustment | Off-chip driver output impedance calibrated against external RZQ resistor - improves signal integrity without external series termination. |
| On-Die Termination (ODT) | Configurable pull-up/pull-down termination on DQ/DQS pins - eliminates need for discrete parallel termination on DIMMs or modules. |
| Auto-Precharge Support | Automatic bank precharge triggered by burst end - reduces manual command overhead and improves bandwidth efficiency. |
| DLL-Based Clock Alignment | Digital DLL locks DQ/DQS phase to CLK/CLK - ensures precise setup/hold timing across process/voltage/temperature variations. |
Applications
| Industrial HMI Controllers | Network Switch Buffering |
|---|---|
|
Use Scenario: Real-time display rendering and multi-touch response in factory-floor HMIs with ARM Cortex-A8/A9 SoCs. IC Role / Device Role / Timing Role: Primary system memory buffer interfacing directly to SoC DDR2 controller with 1066 Mbps throughput. Use Value: CL=6 and tRCD=11.25 ns enable sub-15 ns read access latency critical for UI frame buffering and interrupt-driven I/O handling. |
Use Scenario: Packet buffering in Layer 2/3 Ethernet switches using Marvell or Broadcom switch ASICs. IC Role / Device Role / Timing Role: High-throughput packet queue storage with burst-length-8 reads/writes and ODT-enabled signal integrity. Use Value: VFBGA-84 footprint and SSTL_18 compatibility allow dense, low-noise memory placement adjacent to switch PHYs. |
| Medical Imaging Front-End | Automotive ADAS Video Preprocessing |
|
Use Scenario: Frame buffering for ultrasound or X-ray image acquisition systems operating in extended temperature ranges. IC Role / Device Role / Timing Role: Dual-rank memory subsystem supporting simultaneous acquisition and display pipelines. Use Value: Industrial-grade -18 speed bin guarantees operation up to 85°C case temperature with full AC/DC specs. |
Use Scenario: Camera video preprocessing in automotive surround-view systems using TI TDA3x or NXP S32V234 SoCs. IC Role / Device Role / Timing Role: Low-latency frame store for real-time image warping and stitching algorithms. Use Value: Posted CAS (AL=2) and DLL alignment reduce command-to-data latency, enabling deterministic 60 fps pipeline timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8HQ-37E | 1 Gbit DDR2, 128M×8 organization, same VFBGA-84, but CL=5–6 only; tRCD/tRP = 12.5 ns at DDR2-800. | Lower max data rate (800 Mbps); suited for cost-sensitive designs where 1066 Mbps is not required. | Select when thermal budget or signal integrity constraints favor relaxed timing margins over peak bandwidth. |
| IS42S16160F-6BLI | 1 Gbit DDR2, 64M×16 organization, VFBGA-84, CL=3–6, tRCD/tRP = 12.5 ns at DDR2-800; no EMR3 support. | Lacks EMR(3) for advanced refresh control; limited to industrial temp range (-40°C to +85°C). | Choose for legacy platform compatibility where EMR(3)-dependent high-temp self-refresh is unnecessary. |
Compared with W971GG6NB-18, MT47H128M8HQ-37E trades 1066 Mbps capability for broader vendor support and lower cost at DDR2-800 speeds, while IS42S16160F-6BLI offers identical density and package but omits EMR(3) and high-temp industrial variants - making W971GG6NB-18 optimal for new designs demanding DDR2-1066 timing headroom and extended-temperature flexibility.
Availability
W971GG6NB-18 is available at Aetrix Electronics and suitable for industrial HMI controllers, network switch buffering, medical imaging front-ends, and automotive ADAS video preprocessing requiring stable component supply across extended temperature and long-lifecycle programs.
Supply support for W971GG6NB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with global manufacturing and quality certifications including ISO 9001 and IATF 16949.
The W971GG6NB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for industrial, networking, and embedded applications requiring JEDEC-compliant, high-reliability, extended-temperature memory solutions.
FAQ
What is the maximum data rate supported by the W971GG6NB-18?
The W971GG6NB-18 supports DDR2-1066 operation at 533 MHz clock frequency, delivering a maximum data rate of 1066 Mbps. This is achieved with CL=6 and tCK=1.875 ns, meeting JEDEC specification 6-6-6 timing (tRCD/tRP/tRAS = 11.25/11.25/40 ns). The W971GG6NB-18 achieves this performance under 0°C ≤ TCASE ≤ 85°C with 1.8 V ±0.1 V supply.
Does the W971GG6NB-18 support on-die termination (ODT)?
Yes, the W971GG6NB-18 supports programmable on-die termination (ODT) controlled via the ODT pin and configured through Extended Mode Register 1 (EMR1). When ODT is asserted HIGH, internal termination resistors (calibrated to RZQ) are enabled on DQ and DQS pins, reducing signal reflections and eliminating the need for external parallel termination in point-to-point or stub-bus topologies.
What package type and ball count does the W971GG6NB-18 use?
The W971GG6NB-18 uses a VFBGA-84 package: 8 mm × 12.5 mm body size, 1.0 mm thickness, window-type BGA construction with RoHS-compliant lead-free finish. It has 84 solder balls arranged in an 8×12.5 mm grid, including dedicated VDDQ/VSSQ planes for noise isolation and dual DQS pairs (UDQS/LDQS) for byte-level strobe control.
How is the W971GG6NB-18 initialized after power-up?
The W971GG6NB-18 requires a strict 13-step initialization sequence: stable power ramp (≤200 ms), 200 µs stable clock, CKE assertion, PRECHARGE ALL, three EMRS commands (to EMR2, EMR3, EMR1 for DLL enable), DLL reset MRS, second PRECHARGE ALL, two AUTO REFRESH commands, final MRS, and OCD calibration. This sequence ensures DLL lock, ODT readiness, and register consistency before normal operation begins.
Can the W971GG6NB-18 operate in extended temperature ranges beyond commercial grade?
No - the W971GG6NB-18 is rated for 0°C ≤ TCASE ≤ 85°C only. For extended temperature operation, Winbond offers the W971GG6NB-18I (–40°C to +95°C) and W971GG6NB-18J (–40°C to +105°C) variants, which require doubled refresh frequency (tREFI = 3.9 µs) and EMR(2) bit A7 = 1 to enter self-refresh at high temperature. The W971GG6NB-18 itself does not support these extended conditions.
W971GG6NB-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- SSTL_18
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 58.125 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-TFBGA (8x12.5)
W971GG6NB-18 FAQ
1.How can I place an order for W971GG6NB-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG6NB-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG6NB-18 reliable?
The price and inventory of W971GG6NB-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG6NB-18 is usually 5 days.
3.What payment methods are accepted for W971GG6NB-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG6NB-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG6NB-18?
W971GG6NB-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG6NB-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG6NB-18?
For technical support, including W971GG6NB-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG6NB-18 requirements.
6.How does Aetrix verify that W971GG6NB-18 is sourced from the original manufacturer or authorized distributors?
All W971GG6NB-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG6NB-18 meets industry standards.
7.What is the process for return or replacement of W971GG6NB-18?
All W971GG6NB-18 units undergo pre-shipment inspection (PSI). If there is an issue with W971GG6NB-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG6NB-18 part is unused and in its original packaging.
Return procedure for W971GG6NB-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG6NB-18 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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