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Winbond Electronics Corporation W971GG6NB-18I
- Part No.:
- W971GG6NB-18I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W971GG6NB-18I.pdf
- Description:
- IC DRAM 1GBIT SSTL 18 84TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,775
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Product details
Overview
W971GG6NB-18I from Winbond is a 1G-bit DDR2 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR2-1066 (6-6-6) operation at 533 MHz clock frequency with CAS Latency 6, tRCD/tRP = 11.25 ns, and industrial temperature range (–40°C to +95°C). It delivers 1066 Mbps data transfer rate and integrates on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and DLL-aligned DQS/DQ timing for high-signal-integrity memory subsystems in embedded networking and industrial control systems.
For engineers reviewing the W971GG6NB-18I datasheet, W971GG6NB-18I pinout, W971GG6NB-18I application, or W971GG6NB-18I equivalent, this page provides verified DDR2 timing parameters, VFBGA-84 ball mapping, JEDEC-compliant power-down modes, OCD calibration sequence, and direct alternatives for DDR2-1066 industrial-grade SDRAM replacement.
Technical Context
This DDR2 SDRAM uses differential CLK/CLK inputs synchronized with SSTL_18 I/O interface, supports posted CAS with additive latency (AL = 0–2), and implements source-synchronous read/write via edge-aligned LDQS/UDQS (read) and center-aligned LDQS/UDQS (write). Its DLL aligns DQ transitions to clock edges, enabling stable 533 MHz operation.
The device features four independent banks, auto-precharge for burst reads/writes, programmable ODT resistance (75 Ω / 150 Ω), and OCD calibration for output driver impedance matching. It supports self-refresh at ≤85°C (IDD6 ≤ 8 mA) and extended refresh at 95°C (tREFI = 3.9 µS) via EMR(2) configuration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8,388,608 words × 8 banks × 16 bits) |
| Data Rate | 1066 Mbps (DDR2-1066, 533 MHz clock, CL=6) |
| Operating Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - requires tight regulation for SSTL_18 compliance |
| Timing (CL-tRCD-tRP) | 6-6-6 @ 533 MHz - defines minimum tRCD/tRP = 11.25 ns for reliable bank activation |
| Temperature Range | –40°C ≤ TCASE ≤ 95°C - qualified for industrial environments without derating |
| Refresh Interval | tREFI = 3.9 µS at 95°C - doubles refresh rate vs. standard 7.8 µS to maintain data retention |
| Package | VFBGA-84 (8 mm × 12.5 mm, 1.0 mm height) - RoHS-compliant, lead-free window BGA |
Pinout & Package
VFBGA-84 package (8 × 12.5 mm², 1.0 mm thickness) with ball pitch of 0.8 mm. Ball layout follows JEDEC MO-245AC standard; VSSQ and VDDQ are distributed across perimeter for DQ noise isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row/column address bus; A10 controls auto-precharge enable during read/write commands |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for active/read/write/precharge operations |
| DQ0–DQ15 | Bidirectional Data Bus | 16-bit wide data path; supports burst lengths of 4 or 8 with write mask (UDM/LDM) |
| LDQS / LDQS, UDQS / UDQS | Differential Data Strobe | Source-synchronous strobes: edge-aligned on read, center-aligned on write; enabled via EMR(1) |
| CKE, CS, RAS, CAS, WE | Command Control | Synchronous command inputs latched on CLK/CLK crossing; CS enables rank selection |
| ODT | On-Die Termination Enable | Active-HIGH signal enabling internal 75 Ω or 150 Ω termination for stub-free point-to-point routing |
| VREF | Input Reference Voltage | Tracks VDDQ/2 ± 300 mV; critical for SSTL_18 input threshold stability and noise margin |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Latency | CL = 3–7 allows tuning of read latency vs. timing margin in system-level timing closure |
| Off-Chip Driver Calibration | OCD adjusts output driver impedance to match PCB trace Z₀, reducing reflection-induced jitter |
| DLL-Aligned DQS/DQ Timing | Eliminates clock skew between DQS and DQ, enabling stable 533 MHz operation without external delay tuning |
| Auto-Precharge Support | Reduces manual precharge overhead in burst transfers - essential for high-throughput memory controllers |
| Extended Temperature Refresh | EMR(2)-controlled tREFI = 3.9 µS at 95°C ensures data retention without external thermal compensation logic |
Applications
| Industrial PLC Memory Buffer | Network Router Packet Buffer |
|---|---|
|
Use Scenario: Real-time I/O data buffering in programmable logic controllers operating continuously at 85°C ambient. IC Role / Device Role / Timing Role: Primary working memory for cyclic scan execution, interfacing with ARM Cortex-M7-based controller via 16-bit DDR2 bus. Use Value: Industrial temperature rating (–40°C to +95°C) and doubled refresh at 95°C ensure zero data loss over 10+ year field deployment. |
Use Scenario: High-speed packet buffering in Layer 3 enterprise routers handling 10 Gbps line-rate traffic. IC Role / Device Role / Timing Role: Dual-rank DDR2 buffer for packet reassembly engine, synchronized to 533 MHz system clock with posted CAS AL=2. Use Value: 1066 Mbps bandwidth and DLL-aligned DQS/DQ support deterministic sub-10 ns read/write turnaround for zero-packet-loss forwarding. |
| Medical Imaging Frame Store | Automotive ADAS Video Preprocessor |
|
Use Scenario: Temporary frame storage in portable ultrasound systems requiring EMI-robust memory interface. IC Role / Device Role / Timing Role: Low-noise memory bank for real-time beamforming data, using VSSQ-isolated DQ ground and ODT-enabled stubless routing. Use Value: VSSQ/VDDQ separation and on-die termination reduce crosstalk-induced bit errors in high-density medical PCB layouts. |
Use Scenario: Vision preprocessing buffer in automotive surround-view systems operating in under-hood environments. IC Role / Device Role / Timing Role: Burst-access memory for CNN inference pipeline, leveraging auto-precharge and write data mask (LDM/UDM) for partial-frame updates. Use Value: Write data masking and 8-beat burst mode enable efficient ROI-based image processing without full-frame writes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M16HR-37E:C | DDR2-800 (CL=5, tRCD/tRP=12.5 ns), 256M × 16, same VFBGA-84 package | Limited to 0°C–85°C; lacks extended-temp refresh and OCD calibration | Choose for cost-sensitive consumer designs where 800 Mbps suffices and industrial temp not required. |
| IS42S16160F-6BLI | DDR2-1066 (CL=6), 64M × 16, TFBGA-60 package (smaller footprint, fewer balls) | Lower density (1 G-bit → 1 G-bit same, but 64M×16 = 1 G-bit); no EMR(3) support | Choose when board space is constrained and full DDR2-1066 timing compliance with OCD/ODT is retained. |
Compared with MT47H128M16HR-37E:C and IS42S16160F-6BLI, W971GG6NB-18I uniquely combines industrial temperature support, OCD calibration, and EMR(3)-enabled features - making it the only option for long-life, high-reliability DDR2-1066 systems requiring field-programmable impedance tuning and extended-temperature data retention.
Availability
W971GG6NB-18I is available at Aetrix Electronics and suitable for industrial PLCs, network infrastructure equipment, medical imaging devices, and automotive ADAS modules requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for W971GG6NB-18I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.
W971GG6NB-18I belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for high-reliability embedded systems demanding extended temperature operation, JEDEC-compliant power management, and advanced signal integrity features like OCD and DLL alignment.
FAQ
What is the maximum data rate supported by W971GG6NB-18I?
W971GG6NB-18I supports DDR2-1066 operation at 533 MHz clock frequency, delivering 1066 Mbps per data line. This is validated under industrial temperature conditions (–40°C to +95°C) with CL=6, tRCD/tRP=11.25 ns, and VDD/VDDQ=1.8 V ± 0.1 V. The device meets all JEDEC JESD79-2F AC/DC specifications for DDR2-1066 at this speed grade.
Does W971GG6NB-18I require external termination resistors?
No - W971GG6NB-18I integrates programmable on-die termination (ODT) with selectable 75 Ω or 150 Ω resistance values controlled via the ODT pin and EMR(1). When ODT is asserted HIGH, internal termination eliminates need for external parallel resistors, simplifying PCB layout and improving signal integrity in point-to-point DDR2 interfaces.
How is OCD calibration performed for W971GG6NB-18I?
OCD calibration for W971GG6NB-18I is executed after power-up initialization: first issue EMRS to EMR(1) with A9=A8=A7=HIGH to enter calibration mode, then apply known pattern while monitoring DQ output, and finally issue EMRS to EMR(1) with A9=A8=A7=LOW to lock calibrated impedance. This sequence must occur ≥200 clocks after DLL reset and is documented in Section 8.2.3 of the datasheet.
What is the purpose of the VSSDL and VDDL pins on W971GG6NB-18I?
VSSDL and VDDL provide dedicated ground and power supply for the internal delay-locked loop (DLL) circuitry in W971GG6NB-18I. Isolating DLL power/ground from core VDD/VSS reduces switching noise coupling into the clock alignment circuit, ensuring stable DQS–DQ phase alignment at 533 MHz - critical for maintaining setup/hold margins in high-speed DDR2 interfaces.
Can W971GG6NB-18I operate at 85°C case temperature without refresh rate adjustment?
Yes - W971GG6NB-18I maintains full JEDEC compliance at TCASE ≤ 85°C with standard tREFI = 7.8 µS. Only above 85°C (up to 95°C) does it require doubled refresh frequency (tREFI = 3.9 µS), activated automatically via EMR(2) configuration with A7=1. No hardware changes or firmware intervention are needed for thermal adaptation within its rated range.
W971GG6NB-18I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- SSTL_18
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 58.125 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-TFBGA (8x12.5)
W971GG6NB-18I FAQ
1.How can I place an order for W971GG6NB-18I through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG6NB-18I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG6NB-18I reliable?
The price and inventory of W971GG6NB-18I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG6NB-18I is usually 5 days.
3.What payment methods are accepted for W971GG6NB-18I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG6NB-18I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG6NB-18I?
W971GG6NB-18I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG6NB-18I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG6NB-18I?
For technical support, including W971GG6NB-18I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG6NB-18I requirements.
6.How does Aetrix verify that W971GG6NB-18I is sourced from the original manufacturer or authorized distributors?
All W971GG6NB-18I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG6NB-18I meets industry standards.
7.What is the process for return or replacement of W971GG6NB-18I?
All W971GG6NB-18I units undergo pre-shipment inspection (PSI). If there is an issue with W971GG6NB-18I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG6NB-18I part is unused and in its original packaging.
Return procedure for W971GG6NB-18I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG6NB-18I Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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