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Winbond Electronics Corporation W971GG6NB-18 TR
- Part No.:
- W971GG6NB-18 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W971GG6NB-18 TR.pdf
- Description:
- IC DRAM 1GBIT SSTL 18 84TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,241
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Product details
Overview
W971GG6NB-18 TR from Winbond is a 1 Gbit DDR2 SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR2-1066 (6-6-6) speed grade with CAS Latency 3–7, 1.8 V VDD/VDDQ supply, and SSTL_18 interface. It delivers 1066 Mbps data transfer in embedded networking controllers, industrial HMIs, and legacy PC memory subsystems requiring JEDEC-compliant DDR2.
For engineers reviewing the W971GG6NB-18 TR datasheet, W971GG6NB-18 TR pinout, W971GG6NB-18 TR application, or W971GG6NB-18 TR equivalent, this page provides verified DDR2 timing parameters, ball-level I/O mapping, OCD/ODT configuration details, and validated drop-in alternatives for industrial temperature designs.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write strobes. It supports programmable additive latency (AL = 0–2), burst lengths of 4 or 8, and write latency WL = RL − 1.
Functional operation includes on-die termination (ODT) controlled via dedicated ODT pin, off-chip driver (OCD) impedance calibration using EMR(1), and dual-mode data strobes (UDQS/LDQS) configurable for single-ended or differential operation. Refresh is managed via Auto Refresh (tREFI = 7.8 µs at ≤85°C) and Self Refresh (IDD6 ≤ 8 mA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (8,388,608 words × 8 banks × 16 bits) |
| Data Rate | DDR2-1066: 533 MHz clock → 1066 Mbps per pin |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7; determines minimum read access delay after column address |
| Burst Length | Fixed BL = 4 or 8; defines number of consecutive data transfers per READ/WRITE command |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V; strict tolerance required for signal integrity and timing compliance |
| Operating Temperature | 0°C ≤ TCASE ≤ 85°C (commercial grade); full JEDEC AC/DC specs met across range |
| Interface Standard | SSTL_18 I/O; requires matched 1.8 V termination and VREF = VDDQ/2 ± 300 mV |
| Refresh Interval | tREFI = 7.8 µS max at ≤85°C; doubles to 3.9 µS above 85°C for thermal reliability |
Pinout & Package
VFBGA-84 package (8 mm × 12.5 mm, 1.0 mm height), RoHS-compliant, lead-free, window-type BGA with 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Input | Row/column address bus; A10 controls auto-precharge enable during READ/WRITE |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for ACTIVE/READ/WRITE/PRECHARGE commands |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; SSTL_18 compliant with VDDQ-referenced output drivers |
| UDQS / LDQS | Differential Data Strobe | Source-synchronous strobes for upper/lower byte; edge-aligned on read, center-aligned on write |
| CLK / CLK | Differential Clock Input | Latches all address/control on cross-point; defines system timing reference for all operations |
| CKE | Clock Enable | High enables internal clocking; low forces power-down mode and halts command execution |
| CS, RAS, CAS, WE | Command Control | Encoded command bus; CS gates all commands, RAS/CAS/WE define active/read/write/precharge |
| ODT | On-Die Termination Control | Active-high signal enabling internal termination resistors on DQ/DQS lines to reduce stub reflections |
| VREF | Input Reference Voltage | Reference for all address/control inputs; must track VDDQ/2 ± 300 mV for valid logic thresholds |
| VDD / VDDQ / VDDL | Power Supplies | VDD (core), VDDQ (I/O), VDDL (DLL); each regulated at 1.8 V ± 0.1 V with independent decoupling |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Additive Latency (AL) | AL = 0, 1, or 2 enables early command issuance before CAS, improving bus efficiency in high-throughput systems |
| Off-Chip Driver (OCD) Calibration | EMR(1)-based impedance tuning matches external trace impedance, reducing signal distortion without external resistors |
| On-Die Termination (ODT) | Pin-controlled dynamic termination eliminates need for external parallel terminators on DQ/DQS lines |
| Auto-Precharge | Automatic bank precharge after burst completes; reduces manual command overhead and improves bandwidth utilization |
| Dual Power-Down Modes | Precharged Power Down (low IDD1) and Active Power Down (low IDD0) enable granular power management per operational state |
| Differential DQS Architecture | UDQS/LDQS pairs support noise-immune, high-speed source-synchronous timing for both read and write paths |
Applications
| Industrial HMI Controllers | Legacy Networking Switches |
|---|---|
Use Scenario: Touch-enabled factory-floor operator panels with real-time display refresh and local data buffering. IC Role / Device Role / Timing Role: Main system memory for ARM Cortex-A8/A9-based SoCs running Linux with framebuffer graphics and protocol stacks. Use Value: DDR2-1066 bandwidth sustains 60 Hz UI updates while ODT/OCD ensures stable operation across wide temperature swings (−20°C to 70°C ambient). |
Use Scenario: Layer 2 Ethernet switches with 16–24 ports requiring packet buffering and forwarding table storage. IC Role / Device Role / Timing Role: External packet buffer memory interfaced to switch fabric ASICs via 16-bit DDR2 controller. Use Value: 1 Gbit density supports ≥2 MB packet buffer; tRC = 51.25 ns enables fast random-access lookups for MAC address tables. |
| Medical Diagnostic Terminals | Automated Test Equipment (ATE) |
Use Scenario: Portable ultrasound or ECG devices with embedded image processing and waveform display. IC Role / Device Role / Timing Role: Frame buffer and intermediate result storage for FPGA-accelerated DSP pipelines. Use Value: Low IDD6 (≤8 mA) in Self Refresh extends battery life; VREF tracking ensures reliable operation during voltage droop events. |
Use Scenario: PCB-level functional testers with pattern memory for digital stimulus/response generation. IC Role / Device Role / Timing Role: High-speed pattern storage accessed by FPGA-based sequencer with precise timing control. Use Value: Programmable CL and AL allow fine-tuning to match FPGA I/O timing margins; BL=8 bursts maximize throughput for long test vectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M16HR-37E:A | 1 Gbit DDR2-800 (CL=5, tCK=2.5 ns), 84-ball FBGA, same VDD/VDDQ but higher IDD4W (125 mA vs. 120 mA) | Lower peak bandwidth; suitable where 800 Mbps suffices and thermal headroom is constrained | Select when system clock is limited to 400 MHz and extended temperature range is not required |
| IS42S16160F-6BLI | 1 Gbit DDR2-1066 (CL=6), 84-ball FBGA, identical timing but rated −40°C to 85°C (industrial grade) | Same performance envelope with broader temp rating; no change to layout or initialization sequence | Choose for deployments requiring guaranteed operation at −40°C ambient without derating |
Compared with W971GG6NB-18 TR, MT47H128M16HR-37E:A trades 266 Mbps bandwidth for lower power and relaxed timing margin, while IS42S16160F-6BLI offers identical DDR2-1066 performance with extended cold-temperature qualification-enabling direct substitution in harsh-environment designs without redesign.
Availability
W971GG6NB-18 TR is available at Aetrix Electronics and suitable for industrial HMIs, legacy networking infrastructure, and medical diagnostic terminals requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR2 interoperability.
Supply support for W971GG6NB-18 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash, and analog ICs, with over 30 years of DRAM design heritage and ISO/TS 16949-certified production.
The W971GG6NB series targets cost-sensitive, long-lifecycle industrial and communications applications requiring JEDEC-standard DDR2 compatibility, robust thermal performance, and simplified board-level termination.
FAQ
What is the maximum data rate supported by the W971GG6NB-18 TR?
The W971GG6NB-18 TR supports DDR2-1066 operation, achieving a maximum data rate of 1066 Mbps per data line. This corresponds to a 533 MHz differential clock frequency with tCK = 1.875 ns minimum at CL = 6, fully compliant with JEDEC standard JESD79-2F for DDR2 SDRAM.
Does the W971GG6NB-18 TR require external termination resistors?
No, the W971GG6NB-18 TR integrates On-Die Termination (ODT) controlled by the ODT pin and Off-Chip Driver (OCD) calibration via EMR(1). These features eliminate the need for external parallel termination resistors on DQ and DQS lines, simplifying PCB layout and improving signal integrity.
What is the purpose of the VREF pin on the W971GG6NB-18 TR?
The VREF pin on the W971GG6NB-18 TR serves as the reference voltage for all address, command, and control input buffers. It must be maintained at VDDQ/2 ± 300 mV to ensure correct logic threshold detection; deviation beyond this range risks command decoding errors or initialization failure.
Can the W971GG6NB-18 TR operate in Self Refresh mode at 85°C?
Yes, the W971GG6NB-18 TR supports Self Refresh mode across its full commercial temperature range (0°C ≤ TCASE ≤ 85°C), with maximum IDD6 current of 8 mA. At temperatures above 85°C, Self Refresh remains functional only if the part is upgraded to 18I or 18J grade variants with extended thermal qualification.
How many banks does the W971GG6NB-18 TR have, and how are they selected?
The W971GG6NB-18 TR contains eight internal memory banks, selected using the BA0–BA2 signals. Each ACTIVE, READ, WRITE, or PRECHARGE command is directed to one bank based on the 3-bit bank address, enabling interleaved access and improved effective bandwidth.
W971GG6NB-18 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- SSTL_18
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 58.125 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-TFBGA (8x12.5)
W971GG6NB-18 TR FAQ
1.How can I place an order for W971GG6NB-18 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG6NB-18 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG6NB-18 TR reliable?
The price and inventory of W971GG6NB-18 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG6NB-18 TR is usually 5 days.
3.What payment methods are accepted for W971GG6NB-18 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG6NB-18 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG6NB-18 TR?
W971GG6NB-18 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG6NB-18 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG6NB-18 TR?
For technical support, including W971GG6NB-18 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG6NB-18 TR requirements.
6.How does Aetrix verify that W971GG6NB-18 TR is sourced from the original manufacturer or authorized distributors?
All W971GG6NB-18 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG6NB-18 TR meets industry standards.
7.What is the process for return or replacement of W971GG6NB-18 TR?
All W971GG6NB-18 TR units undergo pre-shipment inspection (PSI). If there is an issue with W971GG6NB-18 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG6NB-18 TR part is unused and in its original packaging.
Return procedure for W971GG6NB-18 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG6NB-18 TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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