Winbond Electronics Corporation W971GG6NB-25

Overview

W971GG6NB-25 from Winbond is a 1G-bit DDR2 SDRAM organized as 8M × 8 banks × 16 bits, compliant with DDR2-800 (5-5-5 or 6-6-6) timing, operating at 1.8 V ± 0.1 V supply, and featuring CAS latency options of 3–7 for embedded memory subsystems in industrial control and networking equipment.

For engineers reviewing the W971GG6NB-25 datasheet, W971GG6NB-25 pinout, W971GG6NB-25 application, or W971GG6NB-25 equivalent, key selection considerations include tRCD = 12.5 ns, tRP = 12.5 ns, tRC = 52.5 ns, ODT support, and VFBGA-84 package compatibility with JEDEC DDR2-800 interface requirements.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. It integrates DLL-based DQ–DQS alignment, programmable additive latency (AL), and write latency = read latency − 1 (WL = RL − 1).

Functional operation includes auto-precharge, self-refresh, precharged/active power-down modes, OCD impedance calibration, and on-die termination (ODT) controlled via dedicated ODT pin. All commands are sampled on the crossing of CLK rising and CLK falling edges, and address/control inputs use SSTL_18 signaling.

Key Specifications

Pinout & Package

VFBGA-84 package (8 mm × 12.5 mm, 1.0 mm height), RoHS-compliant, lead-free, window-type BGA with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H128M16HR-25E and IS43TR16128B-25BLI, the W971GG6NB-25 offers identical DDR2-800 timing and pinout but lower cost and simpler initialization, making it optimal for cost-sensitive industrial applications within its 0–85°C envelope.

Availability

W971GG6NB-25 is available at Aetrix Electronics and suitable for industrial PLCs, network switches, medical imaging systems, and video surveillance DVRs requiring stable component supply and long-term manufacturing continuity.

Supply support for W971GG6NB-25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, communications, and consumer markets.

The W971GG6NB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-effective, high-reliability embedded systems requiring JEDEC-compliant DDR2-667/800/1066 performance in compact VFBGA packages.

FAQ

What is the maximum clock frequency supported by the W971GG6NB-25?

The W971GG6NB-25 supports DDR2-800 operation, meaning a 400 MHz input clock frequency with double-data-rate transfers yielding 800 Mbps per data line. Its AC specifications are validated up to tCK(min) = 2.5 ns (400 MHz) for CL = 5–7 and tCK(min) = 3.75 ns (266 MHz) for CL = 4, with full JEDEC compliance across the commercial temperature range.

Does the W971GG6NB-25 support on-die termination (ODT)?

Yes, the W971GG6NB-25 supports ODT via a dedicated ODT pin (Ball K9). When driven HIGH, it enables internal termination resistors on DQ and DQS lines, configurable through EMR(1) settings. This eliminates the need for external termination resistors and improves signal integrity in point-to-point or stub-bus topologies.

What package type and ball count does the W971GG6NB-25 use?

The W971GG6NB-25 uses a VFBGA-84 package: 8 mm × 12.5 mm footprint, 1.0 mm thickness, 0.8 mm ball pitch, RoHS-compliant and lead-free. Ball mapping follows JEDEC MO-270AB standard, with dedicated VSSQ, VDDQ, and isolated VSSDL planes for noise reduction.

How is the W971GG6NB-25 initialized after power-up?

Initialization of the W971GG6NB-25 requires a strict 13-step sequence: stable power ramp, 200 µs clock stabilization, CKE assertion, PRECHARGE ALL, three EMRS commands (EMR2, EMR3, EMR1 for DLL enable), MRS for DLL reset, second PRECHARGE ALL, ≥2 AUTO REFRESH, final MRS, and OCD calibration ≥200 clocks after DLL reset - all documented in Section 8.1 of the datasheet.

Can the W971GG6NB-25 operate in self-refresh mode, and what is its current draw?

Yes, the W971GG6NB-25 supports self-refresh mode activated via CKE LOW and specific EMR(2) configuration. At TCASE ≤ 85°C, its maximum IDD6 current is 8 mA - critical for low-power standby in battery-backed or fanless industrial systems where memory data retention must persist without host intervention.