Winbond Electronics Corporation W971GG6NB-25 TR

Overview

W971GG6NB-25 TR from Winbond is a 1G-bit DDR2 SDRAM organized as 8M × 8 banks × 16-bit, compliant with DDR2-800 (5-5-5 or 6-6-6) timing, operating at 1.8 V ± 0.1 V supply, supporting CAS Latency 3–7 and burst lengths of 4/8 for embedded memory subsystems in industrial control and networking equipment.

For engineers reviewing the W971GG6NB-25 TR datasheet, W971GG6NB-25 TR pinout, W971GG6NB-25 TR application, or W971GG6NB-25 TR equivalent, key selection criteria include tRCD = 12.5 ns, tRP = 12.5 ns, ODT support, OCD impedance adjustment, and VFBGA-84 package compatibility with JEDEC DDR2-800 signal integrity requirements.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. It integrates DLL-based DQ–DQS alignment, programmable additive latency (AL), and write latency WL = RL − 1.

Functional operation includes auto-precharge, self-refresh, precharged/active power-down modes, and on-die termination (ODT) controlled via dedicated ODT pin. Mode and extended mode registers configure burst type, CAS latency, OCD calibration, and EMR(2) temperature-compensated refresh for high-temp operation up to 105°C in 25J variants.

Key Specifications

Pinout & Package

VFBGA-84 package with 8×12.5 mm² footprint, 1.0 mm thickness, and window-type construction for thermal and mechanical reliability in industrial PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H128M16HR-25E and IS42S16160F-6BL, the W971GG6NB-25 TR provides superior signal integrity via OCD calibration and DLL-specific power domains, plus guaranteed operation up to 105°C with temperature-aware refresh-critical for industrial and automotive edge computing where thermal margin and timing predictability are non-negotiable.

Availability

W971GG6NB-25 TR is available at Aetrix Electronics and suitable for industrial PLCs, network switches, medical imaging subsystems, and automotive ADAS camera modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W971GG6NB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W971GG6NB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC-compliant signal integrity, and robust power management features like OCD and ODT.

FAQ

What is the maximum operating frequency supported by the W971GG6NB-25 TR?

The W971GG6NB-25 TR supports DDR2-800 operation, meaning it achieves a data transfer rate of 800 Mbps per pin with a 400 MHz differential clock input. This corresponds to a minimum clock period (tCK) of 2.5 ns at CAS Latency 5, verified under JEDEC conditions for 0°C to 85°C case temperature. The -25 speed grade is not rated for DDR2-1066 operation.

Does the W971GG6NB-25 TR support on-die termination (ODT), and how is it controlled?

Yes, the W971GG6NB-25 TR supports on-die termination via a dedicated ODT pin (Ball K9). When driven HIGH, ODT enables internal termination resistors (75 Ω or 150 Ω, configurable via EMR) on DQ/DQS lines. This eliminates the need for external parallel termination resistors and improves signal integrity in point-to-point topologies. The ODT function is independent of mode register settings and responds synchronously to the ODT pin level.

How does the W971GG6NB-25 TR handle refresh at elevated temperatures?

The W971GG6NB-25 TR supports temperature-compensated refresh through Extended Mode Register 2 (EMR(2)). When bit A7 is set HIGH during EMR(2) programming, the device doubles its refresh command frequency-reducing tREFI from 7.8 μs to 3.9 μs-enabling reliable operation up to 105°C in 25J variants. This feature is essential for maintaining data retention in thermally stressed industrial and automotive environments.

What is the purpose of the VSSDL and VDDL pins on the W971GG6NB-25 TR?

VSSDL (Ball J7) and VDDL (Ball J1) provide dedicated ground and power for the internal DLL (Delay-Locked Loop) circuitry. Isolating the DLL's power domain minimizes noise coupling from core and I/O switching activity, ensuring stable DQ–DQS alignment at 400 MHz. This separation is critical for meeting DDR2-800 setup/hold timing margins and is a distinguishing feature versus non-DLL-isolated DDR2 devices.

Can the W971GG6NB-25 TR be used in systems requiring CAS Latency 3?

Yes, the W971GG6NB-25 TR supports CAS Latency 3 at DDR2-800 speeds, with tRCD and tRP minimums of 12.5 ns. However, CL=3 operation requires tCK ≥ 5 ns (200 MHz clock), limiting maximum data rate to 400 Mbps in this configuration. For full 800 Mbps performance, CL=5 (tCK = 2.5 ns) is recommended, as confirmed in the AC characteristics table for -25 speed grade.