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Winbond Electronics Corporation W971GG6SB-18
- Part No.:
- W971GG6SB-18
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W971GG6SB-18.pdf
- Description:
- IC DRAM 1GBIT PAR 84WBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W971GG6SB-18 from Winbond Electronics is a 1G-bit DDR2 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR2-1066 (6-6-6) speed grade with CAS latency 3–7, tCK = 1.875 ns (CL=6), and SSTL_18 interface - deployed in embedded computing, industrial HMIs, and network edge controllers requiring high-bandwidth, low-voltage memory.
For engineers reviewing the W971GG6SB-18 datasheet, W971GG6SB-18 pinout, W971GG6SB-18 application, or W971GG6SB-18 equivalent, this page delivers verified DDR2 timing parameters, ball-mapped I/O roles, OCD/ODT configuration logic, and JEDEC-compliant initialization sequence details essential for signal integrity validation and power-up firmware design.
Technical Context
This DDR2 SDRAM uses a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. It implements DLL-based DQ-DQS alignment and supports programmable additive latency (AL=0–2) to decouple command issuance from data availability.
Functional operation relies on three extended mode registers (EMR1–EMR3) for configuring ODT states, OCD impedance calibration, DLL enable/disable, and differential strobe mode. The device supports auto-precharge, self-refresh at ≤85°C (IDD6 ≤ 8 mA), and precharged power-down with tCK-stable entry/exit timing per JEDEC JESD79-2F.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8,388,608 words × 8 banks × 16 bits) |
| Data Rate | DDR2-1066: 1066 Mb/sec/pin (tCK = 1.875 ns at CL=6) |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7 - determines minimum read access delay in clock cycles |
| Burst Length | Fixed BL = 4 or 8 - defines number of consecutive data transfers per READ/WRITE command |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - requires tightly regulated dual-rail supply with VREF = VDDQ/2 ± 300 mV |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C - validated for full AC/DC specs across JEDEC DDR2-1066 timing bin (6-6-6) |
| Refresh Interval | tREFI = 7.8 μs at 0–85°C - mandates periodic refresh commands to retain data in all banks |
| Interface Standard | SSTL_18 - defines input threshold (VREF-referenced), output drive strength, and termination compatibility |
Pinout & Package
W971GG6SB-18 is packaged in an 84-ball WBGA (8 mm × 12.5 mm, 0.8 mm pitch), RoHS-compliant, lead-free package with separate VDD/VDDQ/VDDL and isolated VSS/VSSQ/VSSDL planes for noise suppression.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | Row address (A0–A12) and column address (A0–A9); A10 controls auto-precharge on READ/WRITE |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for ACTIVE, READ, WRITE, or PRECHARGE commands |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; DQ0–DQ7 paired with LDQS/LDQS, DQ8–DQ15 with UDQS/UDQS |
| UDQS / LDQS | Differential Data Strobe | Source-synchronous strobes - edge-aligned with read data, center-aligned with write data; enabled via EMR(1) |
| ODT | On-Die Termination Control | Active-HIGH signal enabling internal termination resistors (Rtt = 75 Ω or 150 Ω) on DQ/DQS lines during reads/writes |
| CKE | Clock Enable | Gates internal clocking; LOW disables DLL and enters power-down modes; sampled synchronously on CLK/CLK crossing |
| CS, RAS, CAS, WE | Command Inputs | Encoded command set (e.g., ACTIVE, READ, WRITE, PRECHARGE ALL) defined by combination on rising CLK edge |
| VREF | Input Reference Voltage | Reference for all address/control inputs; must track VDDQ/2 ± 300 mV for valid logic thresholds |
Key Features
| Feature | Design Value |
|---|---|
| OCD Impedance Calibration | Adjusts off-chip driver output impedance to match PCB trace Z₀ (typically 50 Ω), reducing reflection-induced jitter on DQ lines |
| Programmable Additive Latency | AL = 0, 1, or 2 allows pipelining of CAS commands ahead of row activation, improving command bus utilization in burst-heavy workloads |
| Dual-Voltage I/O Rails | VDDQ separate from VDD enables independent optimization of core logic (1.8 V) and I/O drivers (1.8 V), minimizing switching noise coupling |
| Self-Refresh Mode | Autonomous refresh at IDD6 ≤ 8 mA - maintains data retention during CPU sleep without external controller intervention |
| Write Data Mask (DM) | LDM/UDM pins mask individual byte lanes during WRITE; sampled on both DQS edges to support partial writes without read-modify-write |
| Precharged Power-Down | Reduces IDD1 current by >50% while preserving bank state - exits in ≤200 ns with no timing penalty on next ACT command |
Applications
| Industrial HMI Controller | Network Edge Router |
|---|---|
Use Scenario: Real-time GUI rendering and multi-touch event buffering in factory-floor HMIs operating at 85°C ambient. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-A8/A9 SoC via 16-bit DDR2 bus; sustains 800 MB/s sustained bandwidth under thermal stress. Use Value: DDR2-1066 speed grade ensures frame buffer updates complete within display vertical blanking interval; ODT + OCD calibration maintains signal integrity on 4-layer PCB with 50-Ω traces. |
Use Scenario: Packet buffering and forwarding table storage in fanless Layer 3 switches deployed in telecom cabinets. IC Role / Device Role / Timing Role: Shared packet memory for ingress/egress engines; operates in auto-precharge mode to minimize tRP/tRC overhead during bursty traffic. Use Value: tRCD = 11.25 ns and tRP = 11.25 ns (6-6-6) reduce command-to-command latency; self-refresh supports graceful failover during brief power brownouts. |
| Medical Imaging Subsystem | Automated Test Equipment (ATE) |
Use Scenario: Raw sensor data capture and real-time FFT preprocessing in portable ultrasound units with strict EMI limits. IC Role / Device Role / Timing Role: High-fidelity acquisition buffer feeding FPGA-based DSP pipeline; uses differential DQS strobes for jitter-tolerant sampling. Use Value: VSSQ-isolated ground plane and SSTL_18 signaling suppress common-mode noise; DLL alignment ensures < ±75 ps DQ-DQS skew across temperature. |
Use Scenario: Pattern memory for high-speed digital I/O channel stimulus/response in semiconductor test handlers. IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for vector storage; configured with CL=3 and AL=0 for minimal read turnaround. Use Value: Burst interrupt capability (BL=8, RL=3) enables mid-burst pattern edits; write data mask allows selective bit-field updates without full-word overwrites. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M16HR-37E | 1 G-bit DDR2-800 (7-7-7), 1.8 V, 84-ball FBGA - higher tRCD/tRP (12.5 ns), no OCD calibration | Lower bandwidth; suitable where 800 MT/s suffices and layout lacks DQ impedance tuning margin | Select when system clock is ≤400 MHz and board-level termination replaces OCD function |
| IS42S16160F-6BLI | 1 G-bit DDR2-1066 (6-6-6), 1.8 V, 60-ball TSOP-II - no differential DQS, no ODT, single VDD rail | Limited to lower-noise environments; lacks on-die termination and DLL fine-tuning for high-speed routing | Choose for cost-sensitive, space-constrained designs where signal integrity margins allow non-differential strobes |
Compared with MT47H128M16HR-37E and IS42S16160F-6BLI, W971GG6SB-18 provides tighter DDR2-1066 timing, integrated OCD/ODT for robust high-density routing, and differential DQS support - making it optimal for thermally constrained, high-bandwidth embedded systems where layout flexibility and signal integrity are critical.
Availability
W971GG6SB-18 is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging subsystems, and automated test equipment requiring stable component supply across extended temperature and long production lifecycles.
Supply support for W971GG6SB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash, and logic ICs, with global distribution and automotive-grade qualification capabilities.
W971GG6SB-18 belongs to Winbond's DDR2 SDRAM product line, engineered for cost-effective, high-reliability memory in industrial and networking applications where DDR3 migration is not feasible.
FAQ
What is the maximum supported CAS latency for W971GG6SB-18?
W971GG6SB-18 supports programmable CAS latency values of 3, 4, 5, 6, and 7. At the DDR2-1066 speed grade (-18), CL=6 corresponds to tCK = 1.875 ns and is the default JEDEC-compliant setting. CL=7 is usable for relaxed timing margins in thermally stressed environments, but requires verification of tRCD and tRP compliance per the -18 timing table.
Does W971GG6SB-18 support differential DQS operation?
Yes, W971GG6SB-18 supports differential DQS operation via UDQS/UDQS and LDQS/LDQS pairs. This mode is enabled by setting the appropriate bit in Extended Mode Register 1 (EMR1) using an EMRS command. When enabled, strobes are edge-aligned with read data and center-aligned with write data - a requirement for robust signal integrity at DDR2-1066 speeds.
How is On-Die Termination (ODT) controlled on W971GG6SB-18?
ODT on W971GG6SB-18 is controlled by the dedicated ODT pin (Ball K9), which must be driven HIGH to enable internal termination resistors (75 Ω or 150 Ω) on DQ and DQS lines during READ/WRITE operations. Termination value is selected via EMR1 configuration. ODT remains inactive when the pin is held LOW or floating, requiring external termination in that state.
What is the required power-up initialization sequence for W971GG6SB-18?
W971GG6SB-18 requires a strict 13-step JEDEC-compliant initialization: stable VDD/VDDQ/VDDL ramp (<200 ms), 200 µs clock stabilization, CKE assertion, PRECHARGE ALL, EMRS to EMR2/EMR3, DLL enable/reset, MRS, OCD calibration (or default exit), and ≥2 AUTO REFRESH commands. Skipping any step risks undefined behavior or initialization failure.
Can W971GG6SB-18 operate in self-refresh mode at 95°C?
No - W971GG6SB-18 is rated for 0°C ≤ TCASE ≤ 85°C. While the -18I variant supports -40°C to 95°C, the -18 grade does not guarantee self-refresh functionality above 85°C. At 95°C, only the -18I part (W971GG6SB18I) is qualified, requiring doubled refresh rate (tREFI = 3.9 µs) and EMR2 bit A7 = 1 to enter self-refresh.
W971GG6SB-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 58.125 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-WBGA (8x12.5)
W971GG6SB-18 FAQ
1.How can I place an order for W971GG6SB-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG6SB-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG6SB-18 reliable?
The price and inventory of W971GG6SB-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG6SB-18 is usually 5 days.
3.What payment methods are accepted for W971GG6SB-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG6SB-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG6SB-18?
W971GG6SB-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG6SB-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG6SB-18?
For technical support, including W971GG6SB-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG6SB-18 requirements.
6.How does Aetrix verify that W971GG6SB-18 is sourced from the original manufacturer or authorized distributors?
All W971GG6SB-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG6SB-18 meets industry standards.
7.What is the process for return or replacement of W971GG6SB-18?
All W971GG6SB-18 units undergo pre-shipment inspection (PSI). If there is an issue with W971GG6SB-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG6SB-18 part is unused and in its original packaging.
Return procedure for W971GG6SB-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG6SB-18 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24C04C-SSHM-T
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