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Winbond Electronics Corporation W971GG6SB-18 TR
- Part No.:
- W971GG6SB-18 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W971GG6SB-18 TR.pdf
- Description:
- IC DRAM 1GBIT PAR 84WBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W971GG6SB-18 TR from Winbond is a 1G-bit DDR2 SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR2-1066 (6-6-6) speed grade with CAS Latency 3–7, 1.8 V ±0.1 V core/I/O supply, and SSTL_18 interface - deployed in embedded computing, industrial control, and network infrastructure memory subsystems.
For engineers reviewing the W971GG6SB-18 TR datasheet, W971GG6SB-18 TR pinout, W971GG6SB-18 TR application, or W971GG6SB-18 TR equivalent, key selection factors include tRCD = 11.25 ns min, tRP = 11.25 ns min, ODT programmability, differential DQS strobes, and WBGA-84 ball package compatibility with JEDEC DDR2-1066 timing compliance.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write data transfer. It supports posted CAS (AL = 0–2), auto-precharge, burst lengths of 4/8, and on-die termination (ODT) controlled via dedicated ODT pin and EMR configuration.
The device integrates eight independent banks, each with row/column decoders, sense amplifiers, and prefetch buffers feeding a 16-bit bidirectional DQ bus. Its initialization sequence requires precise power-up sequencing, EMRS commands for DLL enable/ODT setup, and OCD calibration - all governed by JEDEC JESD79-2F specification compliance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8,388,608 words × 8 banks × 16 bits), enabling 128 MB of byte-addressable memory per device. |
| Data Rate | DDR2-1066: 533 MHz clock → 1066 Mb/s per pin, requiring ≤1.875 ns tCK for CL=6 operation. |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7; determines minimum clock cycles between READ command and first valid data output. |
| tRCD / tRP | 11.25 ns minimum (at DDR2-1066), defining shortest delay from ACTIVE to READ/WRITE and PRECHARGE to ACTIVE. |
| Supply Voltage | VDD = VDDQ = VDDL = 1.8 V ± 0.1 V - strict tolerance required for signal integrity and ODT calibration stability. |
| Interface Standard | SSTL_18 I/O standard with differential CLK/CLK and bi-directional DQS/DQS strobes for edge-aligned reads and center-aligned writes. |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C (commercial grade), validated for full JEDEC AC/DC specs across this range. |
Pinout & Package
Package: WBGA-84 (8 mm × 12.5 mm, 0.8 mm pitch), lead-free and RoHS-compliant, with separate VDD/VDDQ/VDDL and isolated VSS/VSSQ/VSSDL grounds for noise suppression.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | Row address (A0–A12) and column address (A0–A9); A10 controls auto-precharge during READ/WRITE. |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for ACTIVE, READ, WRITE, or PRECHARGE commands. |
| DQ0–DQ15 | Bidirectional Data Bus | 16-bit parallel I/O path; supports burst transfers with DM masking and DQS-strobe synchronization. |
| UDQS / LDQS | Differential Data Strobes | Upper (DQ8–DQ15) and lower (DQ0–DQ7) byte strobes; edge-aligned on reads, center-aligned on writes. |
| CLK / CLK | Differential Clock Inputs | Sampling reference for all address/control inputs; crossing points define command latching edges. |
| ODT | On-Die Termination Control | Active-HIGH signal enabling internal termination resistors (75 Ω or 150 Ω) to reduce stub reflections. |
| CKE | Clock Enable | Gates internal clock distribution; LOW disables DLL and enters power-down modes. |
| VREF | Input Reference Voltage | Reference for address/control input thresholds; must track VDDQ/2 ±300 mV for valid logic sampling. |
Key Features
| Feature | Design Value |
|---|---|
| DLL-based Timing Alignment | Digitally locked loop aligns DQ and DQS transitions to CLK crossings, enabling stable 533 MHz operation with <10 ps skew. |
| Programmable ODT & OCD | On-die termination (75/150 Ω) and off-chip driver impedance adjustment allow board-level signal integrity tuning without external resistors. |
| Auto-Precharge & Burst Modes | Hardware-triggered precharge after burst access reduces command overhead; supports BL=4/8 with seamless interrupt capability. |
| Multi-Temp Power Management | Self-refresh current capped at 8 mA (≤85°C); extended 95°C operation supported via doubled refresh rate (tREFI = 3.9 µS). |
| JEDEC DDR2-1066 Compliance | Fully conforms to JESD79-2F timing, voltage, and command protocol requirements for DDR2-1066 (6-6-6) operation. |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
|
Use Scenario: Real-time deterministic data buffering in programmable logic controllers handling multi-axis motion control and fieldbus I/O. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O data staging, operating under tight tRCD/tRP timing constraints. Use Value: DDR2-1066 bandwidth (1066 Mb/s/pin) sustains >800 MB/s aggregate throughput across dual-channel interfaces while maintaining 0–85°C thermal reliability. |
Use Scenario: High-throughput packet buffering in Layer 2/L3 Ethernet switches processing 10/25/40 GbE line rates. IC Role / Device Role / Timing Role: Shared buffer pool for ingress/egress queues, leveraging bank interleaving and auto-precharge to minimize latency stalls. Use Value: 8-bank architecture enables concurrent row activation across banks, achieving sustained 190 mA IDD7 interleave read current without thermal throttling. |
| Medical Imaging Controller RAM | Video Surveillance DVR Memory |
|
Use Scenario: Frame buffering and real-time image processing in ultrasound and digital radiography systems with strict EMI and thermal limits. IC Role / Device Role / Timing Role: Low-noise, isolated-memory subsystem using VSSQ/VDDQ separation and differential DQS to suppress switching noise near analog front-ends. Use Value: SSTL_18 I/O and 1.8 V supply reduce dynamic power vs. DDR1, cutting IDD4R to 145 mA at DDR2-1066 - critical for fanless enclosures. |
Use Scenario: Multi-stream HD video encoding/decoding in embedded NVRs with 24/7 continuous write workloads. IC Role / Device Role / Timing Role: Write-intensive memory resource managing simultaneous encode buffers, metadata tables, and playback caches. Use Value: Write data mask (DM) and WL = RL − 1 timing allow partial-word writes without read-modify-write cycles, reducing write latency by up to 30%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M16HR-37E | 1 G-bit DDR2-800 (CL=5, tRCD=12.5 ns), 84-ball FBGA, Micron; no ODT pin - uses mode register only. | Lower bandwidth (800 Mb/s/pin); suitable where system clocking or layout cannot support DDR2-1066 timing margins. | Select when cost sensitivity outweighs bandwidth need and ODT pin control is not required. |
| IS42S16160F-6BLI | 1 G-bit DDR2-667 (CL=5, tRCD=15 ns), 60-ball TSOP, ISSI; single-ended DQS, no differential strobe support. | Limited to ≤333 MHz clocks; lacks DLL and differential signaling - used in legacy space-constrained designs. | Choose only for drop-in replacement in existing TSOP-based boards with no DDR2-1066 or DQS routing. |
Compared with MT47H128M16HR-37E and IS42S16160F-6BLI, W971GG6SB-18 TR delivers higher bandwidth (1066 vs. 800/667 Mb/s/pin), tighter timing (11.25 ns tRCD), and hardware ODT control - making it optimal for new designs targeting JEDEC DDR2-1066 compliance and signal integrity-critical layouts.
Availability
W971GG6SB-18 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR2 memory performance.
Supply support for W971GG6SB-18 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash storage, and microcontrollers, with over 30 years of DRAM design heritage.
The W971GG6SB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, engineered for robust operation in extended temperature environments and high-reliability embedded systems.
FAQ
What is the maximum data rate supported by W971GG6SB-18 TR?
W971GG6SB-18 TR supports DDR2-1066 operation, delivering 1066 Mb/s per pin at a 533 MHz clock frequency. This is validated under the -18 speed grade with CL=6, tRCD=11.25 ns, and tRP=11.25 ns minimum timing parameters per JEDEC JESD79-2F. The device achieves this rate using differential CLK inputs and DLL-aligned DQS strobes.
Does W971GG6SB-18 TR require external termination resistors?
No - W971GG6SB-18 TR integrates programmable on-die termination (ODT) controlled via the dedicated ODT pin and EMR(1) register settings. It supports 75 Ω and 150 Ω termination values, eliminating the need for external parallel resistors on DQ/DQS lines and simplifying PCB layout for high-speed DDR2 interfaces.
What package type and ball count does W971GG6SB-18 TR use?
W971GG6SB-18 TR uses a WBGA-84 package measuring 8 mm × 12.5 mm with 0.8 mm pitch. It features 84 solder balls arranged in an 8×12.5 mm² grid, including dedicated VDDQ/VSSQ planes, isolated DLL power/ground (VDDL/VSSDL), and differential clock/strobe balls compliant with JEDEC MO-245 standards.
Can W971GG6SB-18 TR operate at temperatures below 0°C?
No - the W971GG6SB-18 TR variant is rated for 0°C ≤ TCASE ≤ 85°C only. For sub-zero operation down to –40°C, the industrial-grade W971GG6SB-18I variant must be selected, which undergoes extended temperature validation and supports full JEDEC AC/DC specs across that range.
How is burst length configured on W971GG6SB-18 TR?
Burst length on W971GG6SB-18 TR is programmed via the Mode Register Set (MRS) command, supporting fixed BL=4 or BL=8. The setting is stored in MR[12:10] and remains active until reprogrammed. BL=4 is typically used for cache-line-aligned accesses, while BL=8 suits sequential streaming such as video frame buffering.
W971GG6SB-18 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 58.125 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-WBGA (8x12.5)
W971GG6SB-18 TR FAQ
1.How can I place an order for W971GG6SB-18 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG6SB-18 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG6SB-18 TR reliable?
The price and inventory of W971GG6SB-18 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG6SB-18 TR is usually 5 days.
3.What payment methods are accepted for W971GG6SB-18 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG6SB-18 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG6SB-18 TR?
W971GG6SB-18 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG6SB-18 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG6SB-18 TR?
For technical support, including W971GG6SB-18 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG6SB-18 TR requirements.
6.How does Aetrix verify that W971GG6SB-18 TR is sourced from the original manufacturer or authorized distributors?
All W971GG6SB-18 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG6SB-18 TR meets industry standards.
7.What is the process for return or replacement of W971GG6SB-18 TR?
All W971GG6SB-18 TR units undergo pre-shipment inspection (PSI). If there is an issue with W971GG6SB-18 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG6SB-18 TR part is unused and in its original packaging.
Return procedure for W971GG6SB-18 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG6SB-18 TR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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AT24C04C-SSHM-T
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24AA02UIDT-I/OT
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