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Winbond Electronics Corporation W971GG6SB25I TR

Part No.:
W971GG6SB25I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
84-TFBGA
Datasheet:
AetrixW971GG6SB25I TR.pdf
Description:
IC DRAM 1GBIT PARALLEL 84WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,992

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Product details

Overview

W971GG6SB25I TR from Winbond is a 1G-bit DDR2 SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR2-800 (5-5-5 or 6-6-6) operation at 400 MHz clock frequency with CL=5/6, tRCD/tRP = 12.5 ns, and industrial temperature range (−40°C to +95°C). It delivers 1.6 Gb/s per pin in systems requiring high-bandwidth memory for embedded controllers, network processors, and industrial HMIs.

For engineers reviewing the W971GG6SB25I TR datasheet, W971GG6SB25I TR pinout, W971GG6SB25I TR application, or W971GG6SB25I TR equivalent, key selection factors include its SSTL_18 interface compliance, on-die termination (ODT), OCD impedance calibration, differential DQS strobes, and support for posted CAS with AL=0–2 - all critical for signal integrity and timing margin in dense PCB layouts.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ transitions to clock edges, enabling stable 400 MHz operation under industrial thermal stress.

The device supports programmable burst lengths (4/8), additive latency (AL=0–2), write latency = RL−1, and dual ODT modes (dynamic and static). Internal refresh control, auto-precharge, and power-down states (precharged/active) are managed via EMR(2)/EMR(3) and CKE gating - essential for low-power embedded runtime and thermal management.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density1 Gbit (8,388,608 words × 8 banks × 16 bits)
Data RateDDR2-800: 800 Mb/s per pin (400 MHz clock, two transfers/cycle)
CAS LatencyProgrammable CL = 5 or 6; determines minimum read access delay after column address
tRCD / tRP12.5 ns minimum; defines timing guardband between activate/precharge and command execution
Supply VoltageVDD/VDDQ/VDDL = 1.8 V ± 0.1 V; strict tolerance required for SSTL_18 I/O and DLL stability
Operating Temperature−40°C ≤ TCASE ≤ 95°C; validated for full JEDEC AC/DC specs across industrial range
Refresh IntervaltREFI = 3.9 µS at 85–95°C (doubled rate); ensures data retention under thermal stress
PackageWBGA-84 (8 mm × 12.5 mm, 0.8 mm pitch); RoHS-compliant, lead-free

Pinout & Package

W971GG6SB25I TR uses an 84-ball WBGA package (8 mm × 12.5 mm, 0.8 mm pitch) with separate VDD/VDDQ/VDDL and VSS/VSSQ/VSSDL domains for noise isolation. Ball layout follows JEDEC-standard DDR2 SDRAM pinout with dedicated differential clocks (CLK/CLK), command/address (CS/RAS/CAS/WE/BA0–BA2/A0–A12), data (DQ0–DQ15), strobes (UDQS/UDQS/LDQS/LDQS), and control (ODT/CKE/DM/VREF).

Pin/Terminal Circuit Role Design Meaning
A0–A12Address InputRow/column address bus; A10 controls auto-precharge on read/write commands
BA0–BA2Bank SelectSelects one of eight internal banks for concurrent bank activation
DQ0–DQ15Bidirectional Data16-bit data path; VDDQ/VSSQ isolation minimizes switching noise coupling
UDQS/UDQS, LDQS/LDQSDifferential Data StrobeSource-synchronous strobes for upper/lower bytes; edge-aligned on read, center-aligned on write
CLK/CLKDifferential Clock InputDefines all timing windows; inputs sampled at crossing points for jitter immunity
CKEClock EnableGates internal clocking; LOW disables DLL and enters power-down states
ODTOn-Die Termination ControlEnables internal termination resistors (75 Ω/150 Ω) during reads/writes to suppress reflections
VREFInput Reference VoltageReference for address/command inputs; must track VDDQ/2 ±300 mV for valid logic thresholds

Key Features

Feature Design Value
On-Die Termination (ODT)Configurable dynamic termination (75 Ω/150 Ω) reduces stub reflections without external resistors
Off-Chip Driver (OCD) CalibrationPer-pin output impedance tuning via EMR(1) improves signal integrity across voltage/temperature
Posted CAS with Additive LatencyAL=0–2 decouples command bus occupancy from data return, increasing effective bandwidth
Dual Power Domains (VDDQ/VDD)Separate I/O and core supplies enable independent noise management and lower EMI
Industrial Temp SupportFull AC/DC spec compliance at −40°C to +95°C, including doubled refresh at high temp
Self Refresh ModeIDD6 ≤ 8 mA at TCASE ≤ 85°C; maintains data with only CKE inactive and clocks stopped

Applications

Industrial HMI Systems Network Edge Routers

Use Scenario: Touch-enabled operator panels with real-time graphics rendering and local data logging.

IC Role / Device Role / Timing Role: Primary system memory buffering video frame buffers, GUI assets, and configuration databases.

Use Value: DDR2-800 bandwidth and 8-bank interleaving sustain 1.2 GB/s sustained throughput for dual-display overlays without frame drops.

Use Scenario: Layer-3 packet forwarding engines processing 10/100/1000BASE-T traffic with deep packet inspection.

IC Role / Device Role / Timing Role: Packet buffer memory interfaced to multi-core NPU with burst-optimized read/write coalescing.

Use Value: Programmable tRCD/tRP and AL support tight command scheduling to meet <100 ns latency SLAs for control-plane lookups.

Medical Imaging Controllers Automated Test Equipment (ATE)

Use Scenario: Ultrasound beamforming modules acquiring and preprocessing real-time RF echo streams.

IC Role / Device Role / Timing Role: High-throughput FIFO for raw ADC sample buffering before FPGA-based beam synthesis.

Use Value: Differential DQS alignment and OCD calibration ensure <±50 ps skew across 16-bit DQ bus at 400 MHz, preserving sample fidelity.

Use Scenario: Pin-electronics boards performing parallel digital pattern generation and capture at 200+ MHz.

IC Role / Device Role / Timing Role: Pattern memory storing stimulus vectors and expected response signatures for multi-site testing.

Use Value: Auto-precharge and burst interrupt enable rapid vector switching with <2-cycle turnaround, maximizing test throughput.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT47H128M8HQ-25E IT:J128M × 8 organization (1 Gbit), same DDR2-800 speed grade, but 60-ball FBGA; no VDDL supplyRequires different PCB layout and power sequencing; lacks DLL power domain isolationPrefer W971GG6SB25I TR when VDDL separation and WBGA-84 mechanical compatibility are required
IS42S16160F-25BLISame 1 Gbit density and WBGA-84 package, but rated only to 85°C; tREFI not guaranteed above 85°CNot qualified for extended industrial thermal cycling; requires external refresh controller above 85°CW971GG6SB25I TR is mandatory where ambient exceeds 85°C or self-refresh reliability is critical

Compared with MT47H128M8HQ-25E IT:J and IS42S16160F-25BLI, W971GG6SB25I TR uniquely combines industrial-grade thermal validation (−40°C to +95°C), dedicated VDDL supply for DLL stability, and OCD calibration - making it the only option for high-reliability embedded systems demanding consistent timing margins across full temperature range.

Availability

W971GG6SB25I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W971GG6SB25I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W971GG6SB25I TR belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded applications requiring JEDEC-compliant performance with enhanced signal integrity features like OCD and ODT.

FAQ

What is the maximum operating frequency supported by W971GG6SB25I TR?

W971GG6SB25I TR supports DDR2-800 operation at 400 MHz clock frequency (800 Mb/s per pin), validated for both 5-5-5 and 6-6-6 timing bins across −40°C to +95°C. Its tCK(avg) minimum is 2.5 ns at CL=5 and 3.75 ns at CL=4, ensuring reliable setup/hold margins in high-speed designs using SSTL_18 signaling.

Does W971GG6SB25I TR require external termination resistors?

No, W971GG6SB25I TR integrates on-die termination (ODT) with selectable 75 Ω or 150 Ω resistance values controlled via the ODT pin and EMR settings. This eliminates the need for external parallel termination resistors on DQ/DQS lines, reducing PCB area and improving signal integrity in point-to-point or fly-by topologies.

How does the OCD calibration feature improve signal integrity in W971GG6SB25I TR?

W971GG6SB25I TR's Off-Chip Driver (OCD) calibration adjusts output driver impedance dynamically using EMR(1) commands, compensating for process/voltage/temperature variations. This maintains consistent 40 Ω DQ output impedance, minimizing reflection-induced jitter and eye closure - especially critical for clean 400 MHz data eyes in dense routing environments.

What is the purpose of the VDDL supply pin on W971GG6SB25I TR?

VDDL powers the internal DLL (Delay-Locked Loop) circuitry independently from VDD and VDDQ. This isolation prevents DLL phase error caused by core or I/O supply noise, ensuring precise DQ–DQS alignment across temperature and load - a key requirement for stable DDR2-800 operation in electrically noisy industrial systems.

Can W971GG6SB25I TR operate reliably at 95°C case temperature?

Yes, W971GG6SB25I TR is fully specified for −40°C ≤ TCASE ≤ 95°C, including all AC/DC parameters. At 85–95°C, it requires doubled refresh rate (tREFI = 3.9 µS) and entry into Self Refresh mode via EMR(2) bit A7, both supported in hardware. IDD6 remains ≤ 8 mA, confirming thermal design viability.

W971GG6SB25I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
84-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR2
Memory Size:
1Gbit
Memory Organization:
64M x 16
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
57.5 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
84-WBGA (8x12.5)

W971GG6SB25I TR FAQ

1.How can I place an order for W971GG6SB25I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W971GG6SB25I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W971GG6SB25I TR reliable?

The price and inventory of W971GG6SB25I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG6SB25I TR is usually 5 days.

3.What payment methods are accepted for W971GG6SB25I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG6SB25I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W971GG6SB25I TR?

W971GG6SB25I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W971GG6SB25I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W971GG6SB25I TR?

For technical support, including W971GG6SB25I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG6SB25I TR requirements.

6.How does Aetrix verify that W971GG6SB25I TR is sourced from the original manufacturer or authorized distributors?

All W971GG6SB25I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG6SB25I TR meets industry standards.

7.What is the process for return or replacement of W971GG6SB25I TR?

All W971GG6SB25I TR units undergo pre-shipment inspection (PSI). If there is an issue with W971GG6SB25I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W971GG6SB25I TR part is unused and in its original packaging.

Return procedure for W971GG6SB25I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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