Winbond Electronics Corporation W971GG6SB-25 TR

Overview

W971GG6SB-25 TR from Winbond is a 1G-bit DDR2 SDRAM organized as 8M × 8 banks × 16-bit, compliant with DDR2-800 (5-5-5 or 6-6-6) timing, operating at 1.8 V ± 0.1 V supply, and supporting CAS latencies of 3–7 for use in embedded computing, industrial controllers, and legacy communication baseband modules.

For engineers reviewing the W971GG6SB-25 TR datasheet, W971GG6SB-25 TR pinout, W971GG6SB-25 TR application, or W971GG6SB-25 TR equivalent, key selection considerations include tRCD = 12.5 ns, tRP = 12.5 ns, ODT support, differential clock interface (CLK/CLK), and WBGA-84 package compatibility with JEDEC DDR2-800 system designs.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write strobes (UDQS/LDQS). It supports programmable additive latency (AL = 0–2), burst lengths of 4 or 8, and on-die termination (ODT) controlled via dedicated ODT pin and EMR settings.

The device integrates eight independent memory banks, each with row/column decoders, sense amplifiers, and prefetch buffers. Its command decoder interprets standard DDR2 commands-including ACTIVE, READ, WRITE, PRECHARGE ALL, AUTO REFRESH, and SELF REFRESH-under synchronous control with CKE gating and CS-based rank selection.

Key Specifications

Pinout & Package

W971GG6SB-25 TR uses an 84-ball WBGA package (8 mm × 12.5 mm, RoHS-compliant, lead-free), with separate VDD/VDDQ/VDDL power domains and isolated VSSQ/VSS ground planes for noise immunity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with W971GG6SB-25 TR, MT47H128M16HR-25E offers tighter timing consistency but less flexibility in latency configuration, while IS42S16160F-25BLI trades differential signaling robustness for lower BOM cost and simpler PCB routing.

Availability

W971GG6SB-25 TR is available at Aetrix Electronics and suitable for industrial automation, legacy telecom infrastructure, and medical imaging systems requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR2-800 memory performance.

Supply support for W971GG6SB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W971GG6SB-25 TR belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-optimized, thermally robust embedded systems needing JEDEC-standard DDR2-800 performance with industrial temperature support.

FAQ

What is the maximum supported CAS latency for W971GG6SB-25 TR?

W971GG6SB-25 TR supports CAS latency values of 3, 4, 5, 6, and 7. The maximum CL = 7 is valid at lower frequencies (e.g., CL = 7 @ tCK = 7.5 ns), and must be configured via the Mode Register Set (MRS) command during initialization. All CL settings are fully compliant with DDR2-800 timing requirements for this speed grade.

Does W971GG6SB-25 TR support differential clock inputs?

Yes, W971GG6SB-25 TR requires differential clock inputs via CLK and CLK pins. All address and command signals are sampled at the crossing of CLK rising and CLK falling edges, and output data is referenced to both directions of that crossing. This architecture is mandatory per DDR2 JEDEC specification and essential for timing stability at 400 MHz.

What is the function of the ODT pin on W971GG6SB-25 TR?

The ODT pin on W971GG6SB-25 TR is an active-HIGH control signal that enables on-die termination resistors on DQ and DQS lines. When asserted, it provides dynamic impedance matching to reduce signal reflections during high-speed reads/writes. ODT must be driven externally and coordinated with memory controller timing to avoid conflicts during write-to-read transitions.

Can W971GG6SB-25 TR operate in self-refresh mode at 85°C?

Yes, W971GG6SB-25 TR supports self-refresh mode across its full rated temperature range of 0°C ≤ TCASE ≤ 85°C, with maximum IDD6 current of 8 mA. At 85°C, the device maintains data integrity without external refresh commands, making it suitable for fanless or thermally constrained embedded applications where CPU may enter deep sleep states.

Is the WBGA-84 package of W971GG6SB-25 TR compatible with standard DDR2 layout guidelines?

Yes, the 84-ball WBGA package (8 mm × 12.5 mm) of W971GG6SB-25 TR follows JEDEC MO-245AC mechanical standards and supports standard DDR2 layout practices-including matched-length DQ/DQS traces, dedicated VSSQ planes, and VREF routing adjacent to DQ groups. Ball map matches industry-common DDR2-800 footprint patterns for drop-in compatibility in existing designs.