Winbond Electronics Corporation W971GG8KB25I
- Part No.:
- W971GG8KB25I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W971GG8KB25I.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 60WBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,005
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Product details
Overview
W971GG8KB25I from Winbond Electronics is a 1G-bit DDR2 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V supply, SSTL_18 interface, and industrial temperature range (−40°C to +95°C). It supports CAS latency 3–7, burst lengths 4/8, on-die termination (ODT), and OCD impedance calibration for high-signal-integrity memory subsystems in embedded controllers and networking equipment.
For engineers reviewing the W971GG8KB25I datasheet, W971GG8KB25I pinout, W971GG8KB25I application, or W971GG8KB25I equivalent, key selection criteria include industrial-grade thermal reliability, DDR2-800 timing compliance, WBGA-60 package compatibility, and ODT/OCD configuration support for impedance-controlled PCB layouts.
Technical Context
This DDR2 SDRAM uses differential clock inputs (CLK/CLK) with input sampling at clock crossings, and source-synchronous DQS/DQS strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to the clock, enabling stable data capture at 400 MHz (DDR2-800).
Command decoding relies on synchronous control inputs (CS, RAS, CAS, WE, CKE) sampled on CLK edges, while address and bank select (A0–A13, BA0–BA2) define row/column/bank targeting. Extended Mode Registers (EMR1–EMR3) configure ODT states, OCD calibration, additive latency, and differential strobe modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16,777,216 words × 8 banks × 8 bits) |
| Data Rate | 800 Mb/s per pin (DDR2-800, CL=5 tCK = 2.5 ns min) |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - requires tight regulation for signal integrity |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7 - determines read access delay relative to command |
| Burst Length | 4 or 8 - defines number of consecutive data transfers per read/write command |
| Operating Temperature | −40°C ≤ TCASE ≤ +95°C - qualified for industrial environments without derating |
| Interface Standard | SSTL_18 - mandates 1.8 V I/O signaling with controlled-impedance trace design |
| Package | WBGA-60 (8 mm × 12.5 mm, 0.8 mm pitch) - RoHS-compliant, lead-free |
Pinout & Package
W971GG8KB25I is housed in a 60-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 12.5 mm with 0.8 mm ball pitch. The package uses lead-free materials and complies with RoHS directives.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Input | Row address (A0–A13); column address (A0–A9); A10 controls auto-precharge |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for active/read/write/precharge commands |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; referenced to DQS/DQS for source-synchronous timing |
| DQS / DQS | Differential Data Strobe | Edge-aligned with read data, center-aligned with write data; enables precise timing capture |
| ODT | On-Die Termination Control | Active-HIGH enables internal termination resistors to reduce stub reflections on DQ/DQS lines |
| CS, RAS, CAS, WE | Command Inputs | Define command type (e.g., ACT, READ, WRITE, PRECHARGE) when sampled with CKE HIGH |
| CLK / CLK | Differential Clock Input | All commands and addresses latched at crossing of CLK rising and CLK falling edges |
| CKE | Clock Enable | Registered HIGH enables internal clock circuitry; LOW places device in power-down mode |
| DM/RDQS | Data Mask / Read Strobe | DM masks write data on both DQS edges; RDQS enabled via EMR(1)[A11] for differential read strobe |
| VREF | Input Reference Voltage | Reference for all address/control inputs; must track VDDQ/2 ±300 mV for valid logic thresholds |
| VDD / VDDQ / VDDL | Power Supplies | VDD (core), VDDQ (I/O), VDDL (DLL) each require independent 1.8 V ±0.1 V regulation |
| VSS / VSSQ / VSSDL | GND Planes | Separate ground returns for core, I/O, and DLL improve noise isolation and jitter performance |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable termination resistance on DQ/DQS lines reduces signal reflections without external resistors |
| Off-Chip Driver (OCD) Calibration | Programmable output driver impedance matching improves signal integrity across process/voltage/temperature |
| Posted CAS with Additive Latency | AL + CL read latency decouples command bus utilization from data return timing, increasing bandwidth efficiency |
| Auto-Precharge | Automatic bank precharge after burst completes eliminates explicit PRE command overhead in sequential accesses |
| Self-Refresh Mode | Autonomous refresh during CKE LOW maintains data retention with IDD6 ≤ 8 mA at TCASE ≤ 85°C |
| Differential DQS Strobes | DQS/DQS pair provides robust source-synchronous timing for reliable high-speed read/write capture |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control in programmable logic controllers requiring non-volatile program storage and fast data logging buffers. IC Role / Device Role / Timing Role: DDR2 SDRAM serving as main working memory for firmware execution and cyclic I/O data buffering with guaranteed −40°C to +95°C operation. Use Value: Industrial temperature rating ensures uninterrupted operation in uncontrolled cabinet environments; ODT and OCD enable stable 400 MHz operation on dense backplane PCBs. | Use Scenario: Temporary storage of Ethernet frames in Layer 2/L3 switching ASICs handling 1 Gbps line-rate traffic. IC Role / Device Role / Timing Role: High-bandwidth packet buffer interfacing directly to switch fabric controller via SSTL_18 DDR2 interface. Use Value: DDR2-800 data rate delivers 6.4 GB/s peak bandwidth across 16-bit bus; auto-precharge and posted CAS minimize command overhead during burst-heavy frame processing. |
| Medical Imaging System Frame Store | Automotive ADAS Video Preprocessor |
Use Scenario: Intermediate frame storage between image sensor interface and FPGA-based reconstruction engine in portable ultrasound devices. IC Role / Device Role / Timing Role: Low-power, thermally robust DDR2 memory holding raw scan-line data prior to beamforming and filtering. Use Value: Self-refresh current ≤ 8 mA extends battery life during idle periods; WBGA-60 footprint minimizes board area in space-constrained handheld enclosures. | Use Scenario: Real-time video buffering for lane detection and object tracking in automotive camera modules operating under hood temperatures. IC Role / Device Role / Timing Role: Industrial-grade DDR2 memory supporting vision processor's burst-intensive pixel pipeline with minimal latency variation. Use Value: −40°C to +95°C qualification meets AEC-Q200 ambient requirements; DLL alignment ensures consistent setup/hold margins across temperature extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8HQ-25E | 1 G-bit DDR2-800, 78-ball FBGA, CL=5, tCK=2.5 ns, −40°C to +95°C | Requires different PCB layout due to larger 11.5 mm × 13 mm package and distinct ball map | Preferred where Micron's long-term supply assurance and JEDEC-compliant validation are prioritized over footprint compatibility |
| IS42S16160F-25BLI | 256 M-word × 16-bit (4 G-bit total), 60-ball WBGA, DDR2-800, CL=5, −40°C to +85°C | Higher density and wider bus; limited to +85°C max case temperature | Consider for designs needing higher bandwidth or lower component count, but verify thermal margin at 95°C ambient |
Compared with MT47H128M8HQ-25E and IS42S16160F-25BLI, W971GG8KB25I offers identical DDR2-800 timing and industrial temperature range in a pin-compatible WBGA-60 footprint, enabling direct substitution where Winbond's qualification and sourcing continuity are preferred.
Availability
W971GG8KB25I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W971GG8KB25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, communications, and consumer markets.
The W971GG8KB series targets cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant DDR2 memory with industrial-grade reliability and simplified power delivery (single 1.8 V supply for core/I/O/DLL).
FAQ
What is the maximum supported CAS latency for W971GG8KB25I?
W971GG8KB25I supports programmable CAS latency values of 3, 4, 5, 6, and 7. At DDR2-800 speed grade (−25/25I), CL=5 corresponds to a minimum tCK of 2.5 ns, and CL=6 to 2.5 ns minimum - both are fully supported per the device's AC timing specifications and mode register configuration.
Does W971GG8KB25I require external termination resistors?
No, W971GG8KB25I integrates On-Die Termination (ODT) on DQ and DQS pins, configurable via EMR(1). When ODT is enabled (ODT pin HIGH), internal termination resistors eliminate the need for external parallel resistors, simplifying PCB layout and improving signal integrity on high-speed memory buses.
What is the purpose of the DM/RDQS pin on W971GG8KB25I?
The DM/RDQS pin on W971GG8KB25I serves dual functions: as DM (Data Mask) during write operations to suppress individual byte lanes, and as RDQS (Read Data Strobe) when enabled via EMR(1)[A11]. In differential strobe mode, it pairs with DQS to provide enhanced timing margin for read data capture.
Can W971GG8KB25I operate without OCD calibration?
Yes, W971GG8KB25I can operate without OCD calibration by programming EMR(1) with default settings (A9=A8=A7=HIGH then LOW). However, performing OCD calibration during initialization optimizes output driver impedance matching across voltage and temperature, improving signal fidelity in high-density layouts.
Is W971GG8KB25I compatible with standard DDR2-800 controllers?
Yes, W971GG8KB25I is fully JEDEC-compliant for DDR2-800 (5-5-5 and 6-6-6 timing), supports all standard DDR2 commands (ACT, READ, WRITE, PRE, REF, MRS, EMRS), and interfaces using SSTL_18 signaling - ensuring drop-in compatibility with any controller designed for DDR2-800 SDRAM.
W971GG8KB25I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-WBGA (8x12.5)
W971GG8KB25I FAQ
1.How can I place an order for W971GG8KB25I through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG8KB25I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG8KB25I reliable?
The price and inventory of W971GG8KB25I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG8KB25I is usually 5 days.
3.What payment methods are accepted for W971GG8KB25I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG8KB25I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG8KB25I?
W971GG8KB25I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG8KB25I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG8KB25I?
For technical support, including W971GG8KB25I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG8KB25I requirements.
6.How does Aetrix verify that W971GG8KB25I is sourced from the original manufacturer or authorized distributors?
All W971GG8KB25I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG8KB25I meets industry standards.
7.What is the process for return or replacement of W971GG8KB25I?
All W971GG8KB25I units undergo pre-shipment inspection (PSI). If there is an issue with W971GG8KB25I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG8KB25I part is unused and in its original packaging.
Return procedure for W971GG8KB25I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG8KB25I Tags

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M24C02-WMN6TP
STMicroelectronics
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Microchip Technology

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Microchip Technology

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Microchip Technology
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Microchip Technology

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Microchip Technology
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