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Winbond Electronics Corporation W971GG8KB25I TR
- Part No.:
- W971GG8KB25I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W971GG8KB25I TR.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 60WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,169
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Product details
Overview
W971GG8KB25I TR from Winbond Electronics is a 1G-bit DDR2 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V supply, industrial temperature range (–40°C to +95°C), and WBGA-60 package. It serves as main system memory in embedded controllers, network processors, and industrial HMIs requiring reliable high-bandwidth data buffering.
For engineers reviewing the W971GG8KB25I TR datasheet, W971GG8KB25I TR pinout, W971GG8KB25I TR application, or W971GG8KB25I TR equivalent, key selection factors include its industrial-grade thermal rating, OCD/ODT signal integrity features, SSTL_18 interface compliance, and support for programmable CAS latency (CL=3–6) and burst lengths (BL=4/8).
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous I/O referenced to both edges of DQS. It supports posted CAS (AL=0–2), auto-precharge, and on-die termination (ODT) controlled via EMR(1) register bits.
Functional operation relies on bank-select addressing (BA0–BA2), row/column address multiplexing (A0–A13), and command decoding via RAS/CAS/WE/CS. The device includes dedicated VDDL/VSSDL for DLL power isolation and VREF tracking at VDDQ/2 to maintain input threshold stability across temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16,777,216 words × 8 banks × 8 bits) |
| Data Rate | DDR2-800: up to 800 Mb/sec/pin (tCK min = 2.5 ns @ CL=5) |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V; VREF = VDDQ/2 ± 300 mV |
| CAS Latency | Programmable CL = 3, 4, 5, or 6; RL = AL + CL (AL = 0–2) |
| Burst Length | Configurable BL = 4 or 8; sequential or interleaved access mode |
| Operating Temp | Industrial grade: –40°C ≤ TCASE ≤ +95°C (25I suffix) |
| Interface Standard | SSTL_18-compliant inputs/outputs; differential CLK/CLK and DQS/DQS |
| Power Modes | Active Power Down, Precharged Power Down, Self Refresh (IDD6 ≤ 8 mA) |
Pinout & Package
Package: WBGA-60 (8 mm × 12.5 mm, lead-free, RoHS compliant). Ball pitch: 0.8 mm. Mounting compatible with standard reflow profiles for fine-pitch BGA.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Input | Row address (A0–A13); column address (A0–A9); A10 = auto-precharge bit |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for ACTIVE/READ/WRITE/PRECHARGE commands |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; SSTL_18-compatible; isolated VSSQ return |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe; edge-aligned on read, center-aligned on write; enabled via EMR(1)[A10]=0 |
| CKE | Clock Enable | Asynchronous enable/disable of internal clock circuitry; LOW disables all operations |
| CS | Chip Select | Active-low command gate; masks all commands when HIGH; enables multi-rank systems |
| RAS / CAS / WE | Command Inputs | Define command type (e.g., ACTIVE, READ, WRITE, PRECHARGE) with CS and BAx |
| ODT | On-Die Termination Control | Active-high signal enabling internal termination resistors (75 Ω or 150 Ω) on DQ/DQS lines |
| VREF | Input Reference Voltage | Reference for address/control input thresholds; must track VDDQ/2 ± 300 mV |
| VDD / VDDQ / VDDL | Power Supplies | VDD: core logic; VDDQ: I/O drivers; VDDL: DLL circuitry - each requires separate 1.8 V ± 0.1 V supply |
| VSS / VSSQ / VSSDL | Ground Returns | Separate ground planes for core (VSS), I/O (VSSQ), and DLL (VSSDL) to minimize noise coupling |
| DM/RDQS | Data Mask / Read Strobe | DM: write mask sampled on both DQS edges; RDQS: optional differential read strobe (EMR(1)[A11]=1) |
| CLK / CLK | Differential Clock Inputs | All commands latched at CLK/CLK crossing; output timing referenced to same crossings |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable 75 Ω or 150 Ω termination on DQ/DQS lines reduces stub reflections and improves signal integrity without external resistors |
| Off-Chip Driver (OCD) Calibration | Dynamic impedance matching of DQ output drivers to transmission line Z₀ minimizes overshoot/undershoot during high-speed bursts |
| Posted CAS with Additive Latency | AL=0–2 allows pipelining of column commands ahead of row activation, increasing command bus utilization by up to 20% in burst-heavy workloads |
| DLL-Based Clock Alignment | Digital delay-locked loop aligns DQ and DQS edges to CLK/CLK crossings, enabling stable 400 MHz operation despite PCB skew and jitter |
| Industrial Temperature Range | Guaranteed functionality from –40°C to +95°C case temperature supports deployment in harsh environments without derating |
| Auto-Precharge & Burst Interrupt | Hardware auto-precharge eliminates manual PRECHARGE issuance after burst; burst interrupt enables mid-burst command preemption for real-time response |
Applications
| Industrial HMI Memory Buffer | Network Processor Frame Buffer |
|---|---|
Use Scenario: Touch-enabled factory-floor HMIs running Linux-based UIs with graphics overlays and real-time status updates. IC Role / Device Role / Timing Role: Primary system memory storing OS kernel, application binaries, and frame buffers; interfaces via 16-bit DDR2 bus at 400 MHz. Use Value: Industrial temperature rating ensures uninterrupted operation in unconditioned control cabinets; ODT+OCD maintains clean eye diagrams across 6-layer PCB traces up to 8 cm. | Use Scenario: Layer-3 switches performing packet classification, forwarding table lookups, and buffer management under sustained 10 Gbps traffic. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by ingress/egress engines; operates in bank-interleaved mode for >1.2 GB/s aggregate bandwidth. Use Value: Programmable CL=5/6 and BL=8 deliver predictable 5.0–6.4 ns read latency; self-refresh current ≤8 mA enables low-power standby during traffic lulls. |
| Medical Imaging Subsystem | Automated Test Equipment (ATE) |
Use Scenario: Portable ultrasound units capturing real-time B-mode video streams at 30 fps with on-device beamforming and image enhancement. IC Role / Device Role / Timing Role: Frame store for raw RF data and processed image buffers; synchronized to FPGA controller using differential CLK/DQS. Use Value: SSTL_18 interface ensures compatibility with Xilinx Artix-7 FPGA I/O banks; VREF tracking guarantees input threshold stability across medical-grade thermal cycling. | Use Scenario: High-precision semiconductor testers requiring deterministic memory access for pattern generation and response capture at 200+ MHz. IC Role / Device Role / Timing Role: Pattern memory holding test vectors and expected responses; accessed in burst mode with precise tRCD/tRP timing control. Use Value: DDR2-800 (5-5-5) timing bin guarantees tRCD ≤12.5 ns and tRP ≤12.5 ns; OCD calibration compensates for board-level impedance variations across 100+ channel fixtures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8HQ-25E IT:C | Micron 1 G-bit DDR2-800 in FBGA-60; identical CL/tRCD/tRP timing (5-5-5); VDDQ tolerance ±0.09 V vs. Winbond's ±0.1 V | Same industrial temp range (–40°C to +95°C); supports same OCD/ODT modes but requires different EMR initialization sequence | Select if existing design uses Micron reference layouts or requires direct qualification under JEDEC JESD21-C test plan |
| IS42S16160F-25BLI | ISSI 1 G-bit DDR2-800 in FBGA-60; CL=5–6 supported; tRC = 57.5 ns (vs. Winbond's 57.5 ns); IDD0 max = 72 mA (vs. 70 mA) | Industrial temp rated; lacks RDQS function and has no A10/AP pin - auto-precharge only via command, not address bit | Choose when RDQS differential strobe is unused and layout reuse favors ISSI's ballout symmetry for routing simplicity |
Compared with MT47H128M8HQ-25E IT:C and IS42S16160F-25BLI, W971GG8KB25I TR offers unique A10/AP pin-based auto-precharge control and explicit RDQS enablement, simplifying FPGA-based controller logic while maintaining identical DDR2-800 timing and industrial thermal performance.
Availability
W971GG8KB25I TR is available at Aetrix Electronics and suitable for industrial HMIs, network processors, medical imaging subsystems, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W971GG8KB25I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W971GG8KB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for applications demanding guaranteed operation from –40°C to +95°C with robust signal integrity features like OCD and ODT.
FAQ
What is the maximum clock frequency supported by W971GG8KB25I TR?
W971GG8KB25I TR supports DDR2-800 operation with a minimum clock period (tCK) of 2.5 ns, corresponding to a 400 MHz differential clock frequency. This is validated for CL=5 and CL=6 operation across the full industrial temperature range (–40°C to +95°C), as specified in the -25I speed grade bin.
Does W971GG8KB25I TR support differential DQS operation?
Yes, W971GG8KB25I TR supports differential DQS/DQS operation when enabled via Extended Mode Register 1 (EMR(1)) bit A10 = 0. In this mode, balls B7 and A8 function as DQS and DQS, respectively, providing edge-aligned read strobes and center-aligned write strobes per JEDEC DDR2 specification.
How is auto-precharge configured on W971GG8KB25I TR?
W971GG8KB25I TR supports two auto-precharge methods: (1) Command-based - using Burst Read/Write with Auto-precharge instructions, and (2) Address-based - setting A10 = HIGH during READ/WRITE commands to trigger automatic bank precharge. Both are fully functional and documented in the device's command truth table.
What power supply domains does W971GG8KB25I TR require?
W971GG8KB25I TR requires three independent 1.8 V ± 0.1 V supplies: VDD (core logic), VDDQ (I/O drivers), and VDDL (DLL circuitry), plus dedicated grounds VSS (core), VSSQ (I/O), and VSSDL (DLL). VREF must be supplied at VDDQ/2 ± 300 mV and remain stable during voltage ramp-up.
Is W971GG8KB25I TR pin-compatible with other Winbond DDR2 SDRAMs in WBGA-60?
W971GG8KB25I TR shares the same WBGA-60 (8×12.5 mm) package and ballout as other members of the W971GG8KB family (e.g., -18, -25, -3 variants), including identical pin functions and placement. However, speed-grade-specific timing parameters and initialization sequences differ, requiring firmware validation per grade.
W971GG8KB25I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-WBGA (8x12.5)
W971GG8KB25I TR FAQ
1.How can I place an order for W971GG8KB25I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG8KB25I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG8KB25I TR reliable?
The price and inventory of W971GG8KB25I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG8KB25I TR is usually 5 days.
3.What payment methods are accepted for W971GG8KB25I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG8KB25I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG8KB25I TR?
W971GG8KB25I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG8KB25I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG8KB25I TR?
For technical support, including W971GG8KB25I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG8KB25I TR requirements.
6.How does Aetrix verify that W971GG8KB25I TR is sourced from the original manufacturer or authorized distributors?
All W971GG8KB25I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG8KB25I TR meets industry standards.
7.What is the process for return or replacement of W971GG8KB25I TR?
All W971GG8KB25I TR units undergo pre-shipment inspection (PSI). If there is an issue with W971GG8KB25I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG8KB25I TR part is unused and in its original packaging.
Return procedure for W971GG8KB25I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG8KB25I TR Tags
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M24C02-WMN6TP
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Microchip Technology
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