Winbond Electronics Corporation W971GG8KB-25 TR
- Part No.:
- W971GG8KB-25 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W971GG8KB-25 TR.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 60WBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,829
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W971GG8KB-25 TR from Winbond is a 1G-bit DDR2 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V ± 0.1 V supply, SSTL_18 interface, and support for CAS latencies 3–7. It delivers up to 800 Mb/sec/pin in embedded networking and industrial control systems requiring reliable synchronous DRAM with on-die termination.
For engineers reviewing the W971GG8KB-25 TR datasheet, W971GG8KB-25 TR pinout, W971GG8KB-25 TR application, or W971GG8KB-25 TR equivalent, key selection criteria include tRCD/tRP = 12.5 ns minimum, ODT programmability, differential DQS strobing, OCD impedance calibration, and WBGA-60 package compatibility with DDR2 memory subsystems.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous I/O referenced to both edges of DQS. It supports posted CAS (AL = 0–2), burst lengths of 4 or 8, and write latency WL = RL − 1.
Functional operation includes auto-precharge, self-refresh, precharged/active power-down modes, and configurable on-die termination (ODT) controlled via dedicated ODT pin and EMR(1). Off-chip driver (OCD) impedance adjustment enables fine-tuned signal integrity tuning during initialization.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16,777,216 words × 8 banks × 8 bits) |
| Data Rate | DDR2-800: 400 MHz clock → 800 Mb/sec/pin |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7; determines read access delay relative to command |
| tRCD / tRP | 12.5 ns minimum - defines minimum delay between ACTIVE and READ/WRITE or PRECHARGE commands |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - strict rail tolerance required for signal integrity and timing compliance |
| Interface Standard | SSTL_18 - mandates compatible 1.8 V I/O drivers and termination on controller side |
| Burst Length | 4 or 8 - determines number of consecutive data transfers per read/write command |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C - commercial-grade thermal envelope for industrial edge devices |
Pinout & Package
Packaged in RoHS-compliant, lead-free WBGA-60 (8 mm × 12.5 mm) with 0.8 mm ball pitch. Ball layout optimized for DDR2 routing constraints including separate VDDQ/VSSQ planes and isolated DLL power (VDDL/VSSDL).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Input | Row/column address bus; A10 controls auto-precharge enable on READ/WRITE |
| BA0–BA2 | Bank Select | 3-bit field selecting one of eight internal banks for command targeting |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; requires matched trace length and SSTL_18 termination |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe; edge-aligned on reads, center-aligned on writes; enables DDR timing margin |
| CKE | Clock Enable | Asynchronous gate controlling internal clock tree activation/deactivation for power-down entry/exit |
| CS, RAS, CAS, WE | Command Inputs | Encoded command bus; all sampled on CLK/CLK crossing - defines ACTIVE, READ, WRITE, PRECHARGE, REFRESH |
| ODT | On-Die Termination Control | Dynamic enable/disable of internal termination resistors (RTT) to reduce stub reflections on DQ/DQS lines |
| VREF | Input Reference Voltage | Stabilized at VDDQ/2 ± 300 mV; used for SSTL_18 input threshold reference |
Key Features
| Feature | Design Value |
|---|---|
| OCD Impedance Adjustment | Programmable off-chip driver output impedance via EMR(1); enables precise matching to PCB trace Z₀ without external resistors |
| Configurable ODT | On-die termination resistance activated by ODT pin; eliminates need for external parallel termination on DQ/DQS buses |
| Posted CAS with AL | Additive latency (AL = 0–2) decouples command bus occupancy from data return timing, improving bus efficiency in burst-heavy workloads |
| DLL-Based Timing Alignment | Internal delay-locked loop aligns DQ and DQS edges to CLK crossings, enabling stable 400 MHz operation despite PVT variation |
| Auto-Precharge Support | Automatic bank precharge triggered by burst end; reduces manual command overhead and prevents row conflicts in sequential accesses |
| Power-Down Modes | Both precharged and active power-down states available; reduces IDD1/IDD4W current by >50% during idle cycles |
Applications
| Industrial HMI Controllers | Network Switch Buffers |
|---|---|
Use Scenario: Real-time display rendering and touch response in factory-floor HMIs with ARM Cortex-A8/A9 SoCs. IC Role / Device Role / Timing Role: Primary system memory providing low-latency, burst-access storage for GUI frame buffers and firmware execution. Use Value: CAS latency 5 and tRCD = 12.5 ns enable sub-30 ns read turnaround, supporting 60 Hz UI refresh with minimal jitter under concurrent Ethernet interrupt load. |
Use Scenario: Packet buffering in Layer 2 managed switches handling 10/100/1000BASE-T traffic. IC Role / Device Role / Timing Role: Shared packet memory accessed by multiple MAC engines and CPU via DDR2 controller with interleaved bank access. Use Value: 8-bank architecture and auto-precharge allow concurrent bursts across banks, sustaining >700 Mbps aggregate throughput with <5% command bus contention. |
| Medical Imaging Edge Devices | Automated Test Equipment (ATE) |
Use Scenario: Local image preprocessing in portable ultrasound units using FPGA-accelerated filtering pipelines. IC Role / Device Role / Timing Role: High-bandwidth frame store interfacing directly to FPGA DDR2 PHY with calibrated DQS alignment. Use Value: Differential DQS/DQS and OCD calibration ensure clean 400 MHz data capture across temperature range, meeting JEDEC DDR2-800 eye mask requirements. |
Use Scenario: Pattern memory in high-speed digital ATE systems generating multi-MHz stimulus vectors. IC Role / Device Role / Timing Role: Deterministic-access memory storing test sequences with guaranteed tRC = 57.5 ns refresh-to-active timing. Use Value: Self-refresh mode maintains pattern integrity during 100+ ms test pauses; IDD6 ≤ 8 mA minimizes thermal drift in densely packed test head modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8HQ-25E | Same density, speed grade, and WBGA-60 package; supports CL = 5 only (not 3/4/6/7); no OCD calibration | Lacks dynamic impedance tuning - requires fixed external termination; less tolerant of board-level signal variation | Preferred when design uses fixed-impedance routing and avoids runtime calibration sequences |
| IS42S16160F-25BLI | 16M × 16 organization (2 G-bit total); wider 16-bit bus; same DDR2-800 speed but different bank count (4 vs 8) and tRC = 60 ns | Requires controller reconfiguration for x16 interface and longer refresh cycle; incompatible with x8-based legacy designs | Select only when migrating to higher bandwidth and redesigning memory controller interface |
Compared with MT47H128M8HQ-25E and IS42S16160F-25BLI, the W971GG8KB-25 TR offers broader CAS latency flexibility, OCD calibration for signal integrity optimization, and native 8-bank architecture - making it optimal for cost-sensitive, thermally constrained industrial DDR2 systems where layout variability exists.
Availability
W971GG8KB-25 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network switch buffers, medical imaging edge devices, and automated test equipment requiring stable component supply with full lifecycle support.
Supply support for W971GG8KB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W971GG8KB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-optimized, thermally robust embedded systems requiring JEDEC-compliant DDR2-667/800/1066 operation in commercial and industrial temperature grades.
FAQ
What is the maximum supported CAS latency for W971GG8KB-25 TR?
The W971GG8KB-25 TR supports programmable CAS latency values of 3, 4, 5, 6, and 7. At DDR2-800 speed (400 MHz clock), CL = 5 corresponds to a 12.5 ns delay, which matches the device's tRCD and tRP minimum specification. CL = 7 is valid but increases read access time and is typically reserved for margin testing or relaxed timing conditions. All CL settings are fully compliant with JEDEC DDR2-800 timing tables.
Does W971GG8KB-25 TR require external termination resistors?
No, the W971GG8KB-25 TR integrates on-die termination (ODT) controlled via the dedicated ODT pin and extended mode registers. When enabled, internal termination resistors (RTT) are applied to DQ and DQS lines, eliminating the need for external parallel resistors. This simplifies PCB layout, reduces BOM count, and improves signal integrity - especially critical in high-density DDR2 routing with stubs or fly-by topologies.
What is the purpose of the OCD calibration feature in W971GG8KB-25 TR?
OCD (Off-Chip Driver) calibration in the W971GG8KB-25 TR allows dynamic adjustment of output driver impedance to match PCB trace characteristic impedance (typically 50 Ω). Executed during initialization via EMR(1), it measures VDDQ and adjusts pull-up/pull-down strength to minimize reflections and improve eye diagram margins. This feature replaces fixed external series resistors and enhances timing robustness across voltage and temperature variations.
Can W971GG8KB-25 TR operate in self-refresh mode at 95°C?
No. The W971GG8KB-25 TR is rated for 0°C ≤ TCASE ≤ 85°C. While its self-refresh current (IDD6) is specified at ≤8 mA up to 85°C, operation above this temperature violates the commercial-grade specification. For extended temperature support, the pin-compatible W971GG8KB-25I variant is qualified from –40°C to 95°C and shares identical electrical and timing behavior at DDR2-800 speed.
What ball configuration does W971GG8KB-25 TR use, and why is VSSQ separation important?
The W971GG8KB-25 TR uses a 60-ball WBGA package (8 mm × 12.5 mm) with dedicated VSSQ balls adjacent to DQ/DQS pins. VSSQ is electrically isolated from main VSS to provide a quiet ground reference for the I/O circuitry, reducing switching noise coupling into sensitive data strobes. This separation is essential for maintaining signal integrity at 400 MHz and meeting DDR2 AC timing windows, particularly for DQS-to-DQ skew and setup/hold margins.
W971GG8KB-25 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-WBGA (8x12.5)
W971GG8KB-25 TR FAQ
1.How can I place an order for W971GG8KB-25 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG8KB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG8KB-25 TR reliable?
The price and inventory of W971GG8KB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG8KB-25 TR is usually 5 days.
3.What payment methods are accepted for W971GG8KB-25 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG8KB-25 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG8KB-25 TR?
W971GG8KB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG8KB-25 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG8KB-25 TR?
For technical support, including W971GG8KB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG8KB-25 TR requirements.
6.How does Aetrix verify that W971GG8KB-25 TR is sourced from the original manufacturer or authorized distributors?
All W971GG8KB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG8KB-25 TR meets industry standards.
7.What is the process for return or replacement of W971GG8KB-25 TR?
All W971GG8KB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W971GG8KB-25 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG8KB-25 TR part is unused and in its original packaging.
Return procedure for W971GG8KB-25 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG8KB-25 TR Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

