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Winbond Electronics Corporation W971GG8NB-18
- Part No.:
- W971GG8NB-18
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-VFBGA
- Datasheet:
-
W971GG8NB-18.pdf
- Description:
- IC DRAM 1GBIT SSTL 18 60VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W971GG8NB-18 from Winbond Electronics is a 1G-bit DDR2 SDRAM organized as 16M × 8 banks × 8 bits, supporting DDR2-1066 (6-6-6) operation at 533 MHz clock frequency with CAS Latency 6, tRCD/tRP = 11.25 ns, and SSTL_18 interface - deployed in embedded computing, industrial HMIs, and network edge devices requiring high-bandwidth, low-voltage memory.
For engineers reviewing the W971GG8NB-18 datasheet, W971GG8NB-18 pinout, W971GG8NB-18 application, or W971GG8NB-18 equivalent, key selection considerations include its -18 speed grade compliance with JEDEC DDR2-1066 timing, 8×9.5 mm² WBGA-60 package, on-die termination (ODT), OCD impedance calibration, and support for posted CAS, auto-precharge, and self-refresh modes.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned to read data and center-aligned to write data. Its DLL aligns DQ and DQS transitions to the clock, enabling precise timing at 533 MHz.
The device supports programmable additive latency (AL = 0–2), CAS latency (CL = 3–7), burst lengths of 4 or 8, and ODT control via dedicated ODT pin. It features four independent banks, off-chip driver (OCD) impedance adjustment, and EMR-based configuration for DLL enable/disable, RDQS mode, and temperature-compensated refresh.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16,777,216 words × 8 banks × 8 bits) |
| Data Rate | 1066 Mbps (DDR2-1066, 533 MHz clock) |
| CAS Latency | CL = 6 (tAA = 11.25 ns at 533 MHz) |
| tRCD / tRP | 11.25 ns minimum - defines minimum delay between ACTIVATE and READ/WRITE or PRECHARGE commands |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - requires tight regulation for signal integrity and timing margin |
| Package | WBGA-60 (8 mm × 9.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C - commercial-grade thermal envelope per order code -18 |
| Interface Standard | SSTL_18 - mandates 1.8 V reference-compatible drivers and terminations |
Pinout & Package
W971GG8NB-18 uses a 60-ball Window BGA (WBGA) package measuring 8 mm × 9.5 mm with 1.0 mm thickness. Ball pitch is 0.8 mm; balls are arranged in an 8×9 grid with two missing positions (L3, L7 = NC).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row address (A0–A13); column address (A0–A9); A10 controls auto-precharge |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for ACTIVATE/READ/WRITE/PRECHARGE |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus - shares pins for read and write transfers |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe - edge-aligned on reads, center-aligned on writes; enabled via EMR(1) |
| CKE | Clock Enable | Asynchronous gate for internal clock circuitry - LOW disables DLL and enters power-down |
| CS, RAS, CAS, WE | Command Inputs | Encoded command bus - sampled on CLK/CLK crossing; CS enables rank selection |
| ODT | On-Die Termination Control | Active-HIGH signal enabling internal termination resistors on DQ/DQS lines during reads/writes |
| DM/RDQS | Data Mask or Read Strobe | Write mask input (DM) when RDQS disabled; dual-function pin configurable via EMR(1)[A11] |
| CLK / CLK | Differential Clock Inputs | Timing reference for all address/control latching and output timing - defines system clock period tCK |
| VDD / VDDQ / VDDL | Power Supplies | VDD (core), VDDQ (I/O), VDDL (DLL) - each regulated at 1.8 V ± 0.1 V; isolated grounds improve noise immunity |
| VREF | Input Reference Voltage | Midpoint reference for SSTL_18 input receivers - must track VDDQ/2 ± 30 mV |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Latency | CL = 3–7 enables optimization across speed grades and system timing margins |
| On-Die Termination (ODT) | Configurable pull-up/pull-down termination on DQ/DQS eliminates external resistors and improves signal integrity |
| Off-Chip Driver (OCD) Calibration | Dynamic impedance matching of DQ outputs to transmission line Z₀ reduces reflection-induced jitter |
| Posted CAS with Additive Latency | AL = 0–2 decouples command bus occupancy from data return timing, increasing command efficiency |
| Auto-Precharge | Automatic bank precharge after burst access reduces manual command overhead and improves bandwidth utilization |
| Differential DQS Strobes | DQS/DQS pair enables robust source-synchronous timing for both read and write operations at 533 MHz |
Applications
| Industrial HMI Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time display rendering and touch response in factory-floor HMIs with ARM Cortex-A8/A9 SoCs. IC Role / Device Role / Timing Role: Primary working memory interfaced directly to SoC's DDR2 controller, providing 8-bit × 533 MHz bandwidth for frame buffer and OS execution. Use Value: DDR2-1066 timing (6-6-6) ensures sub-12 ns tRCD/tRP alignment with SoC constraints, while ODT and OCD reduce layout sensitivity in space-constrained enclosures. | Use Scenario: Packet buffering and forwarding table storage in fanless 1U enterprise routers operating at ambient 70°C. IC Role / Device Role / Timing Role: Dual-rank DDR2 memory subsystem supporting concurrent ingress/egress queue management under sustained 100% traffic load. Use Value: Self-refresh current ≤ 8 mA at TCASE ≤ 85°C maintains thermal budget; WBGA-60 footprint enables dense PCB stacking with minimal trace length mismatch. |
| Medical Imaging Gateways | Automated Test Equipment (ATE) |
Use Scenario: DICOM image preprocessing pipeline in portable ultrasound gateways using TI AM335x processors. IC Role / Device Role / Timing Role: High-reliability memory buffer for real-time JPEG2000 decompression and display output generation. Use Value: 0°C to 85°C commercial grade (-18 suffix) matches medical enclosure thermal profile; tREFI = 7.8 µS ensures stable refresh without temperature derating. | Use Scenario: Pattern memory in PXI-based semiconductor test systems requiring deterministic burst read/write latency. IC Role / Device Role / Timing Role: Low-jitter, repeatable-access memory for vector pattern storage and stimulus delivery timing. Use Value: DLL-aligned DQ/DQS transitions and CL=6 guarantee ±50 ps read data valid window; WBGA mechanical stability prevents solder fatigue under thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8CF-18E | 1 G-bit DDR2, same 60-ball FBGA, but supports CL=5/6 only; tRCD/tRP = 12.5 ns at DDR2-1066 | Marginally looser timing - may require SoC-level timing register tuning for identical performance | Preferred where Micron qualification or long-term supply continuity is mandated |
| IS42S16160F-18BLI | 1 G-bit DDR2 in 60-ball FBGA, CL=6 supported, but rated only for DDR2-800 (2.5 ns tCK min); no ODT pin | Lacks ODT and DLL fine-tuning - requires external termination and limits max frequency to 400 MHz | Cost-sensitive designs where DDR2-1066 is not required and board-level termination is acceptable |
Compared with MT47H128M8CF-18E and IS42S16160F-18BLI, W971GG8NB-18 delivers tighter tRCD/tRP (11.25 ns), integrated ODT control, and full JEDEC DDR2-1066 (6-6-6) compliance - making it optimal for timing-critical, space-constrained industrial controllers where signal integrity and thermal stability are prioritized over vendor diversification.
Availability
W971GG8NB-18 is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply across extended product lifecycles.
Supply support for W971GG8NB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash, and logic ICs, with global distribution and automotive-grade qualification capabilities.
The W971GG8NB series belongs to Winbond's industrial DDR2 SDRAM product line, designed specifically for embedded systems demanding JEDEC-compliant, low-power, high-reliability memory with extended temperature support and robust signal integrity features.
FAQ
What is the maximum data rate supported by the W971GG8NB-18?
The W971GG8NB-18 supports DDR2-1066 operation at 533 MHz clock frequency, delivering 1066 Mbps per data line. This is validated under JEDEC specification 6-6-6 timing (tRCD = tRP = 11.25 ns) at 1.8 V supply and 0°C to 85°C case temperature. The device achieves this using DLL-aligned DQ/DQS timing and SSTL_18 I/O signaling.
Does the W971GG8NB-18 include on-die termination (ODT)?
Yes, the W971GG8NB-18 includes programmable on-die termination (ODT) controlled via the dedicated ODT pin. When asserted HIGH, it enables internal termination resistors on DQ and DQS lines to match typical PCB trace impedances (e.g., 75 Ω), reducing stub reflections and improving signal integrity without external resistors.
What package type and dimensions does the W971GG8NB-18 use?
The W971GG8NB-18 uses a 60-ball Window BGA (WBGA) package measuring 8 mm × 9.5 mm with 1.0 mm height and 0.8 mm ball pitch. It is RoHS-compliant and lead-free, with VSSQ and VSS ground balls isolated for improved noise immunity in mixed-signal environments.
Can the W971GG8NB-18 operate with CAS Latency 5 or 7, or is CL=6 fixed?
The W971GG8NB-18 supports programmable CAS Latency values of 3, 4, 5, 6, and 7 via Mode Register Set (MRS) commands. CL=6 is the default setting for DDR2-1066 (6-6-6) compliance, but CL=5 or CL=7 may be selected depending on system timing margin requirements and SoC controller compatibility.
How is refresh managed in the W971GG8NB-18 at elevated temperatures?
At case temperatures above 85°C, the W971GG8NB-18 requires doubled refresh frequency (tREFI = 3.9 µS instead of 7.8 µS) to maintain data retention. This is enabled automatically via EMR(2) bit A7 = 1, and applies to industrial-grade variants (e.g., 18J). The -18 variant is rated only to 85°C, so standard 7.8 µS refresh suffices across its full operating range.
W971GG8NB-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- SSTL_18
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 58.125 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9.5)
W971GG8NB-18 FAQ
1.How can I place an order for W971GG8NB-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG8NB-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG8NB-18 reliable?
The price and inventory of W971GG8NB-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG8NB-18 is usually 5 days.
3.What payment methods are accepted for W971GG8NB-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG8NB-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG8NB-18?
W971GG8NB-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG8NB-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG8NB-18?
For technical support, including W971GG8NB-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG8NB-18 requirements.
6.How does Aetrix verify that W971GG8NB-18 is sourced from the original manufacturer or authorized distributors?
All W971GG8NB-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG8NB-18 meets industry standards.
7.What is the process for return or replacement of W971GG8NB-18?
All W971GG8NB-18 units undergo pre-shipment inspection (PSI). If there is an issue with W971GG8NB-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG8NB-18 part is unused and in its original packaging.
Return procedure for W971GG8NB-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG8NB-18 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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