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Winbond Electronics Corporation W971GG8NB-18 TR

Name: W971GG8NB-18 TR
Brand: Winbond Electronics Corporation
SKU: W971GG8NB-18 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W971GG8NB-18 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 60-VFBGA

Datasheet:: W971GG8NB-18 TR.pdf

Description:: IC DRAM 1GBIT SSTL 18 60VFBGA

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Product details

Overview

W971GG8NB-18 TR from Winbond is a 1G-bit DDR2 SDRAM organized as 16M × 8 banks × 8 bits, supporting DDR2-1066 (6-6-6) operation at 533 MHz clock frequency with CL=6, tRCD=11.25 ns, and tRP=11.25 ns. It operates on 1.8 V ±0.1 V supply, features on-die termination (ODT), OCD impedance calibration, and differential clock (CLK/CLK) and data strobe (DQS/DQS) interfaces for high-signal-integrity memory subsystems in embedded networking and industrial control systems.

For engineers reviewing the W971GG8NB-18 TR datasheet, W971GG8NB-18 TR pinout, W971GG8NB-18 TR application, or W971GG8NB-18 TR equivalent, key selection criteria include DDR2-1066 timing compliance, 8×9.5 mm² WBGA-60 package compatibility, SSTL_18 I/O interface requirements, and support for auto-precharge, self-refresh, and ODT programmability in multi-rank memory designs.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write data capture. It supports programmable CAS latency (CL=3–7), additive latency (AL=0–2), burst lengths of 4 or 8, and bidirectional DQS/DQS strobes edge-aligned on reads and center-aligned on writes.

The device integrates eight independent banks, on-die termination (ODT) controlled via dedicated ODT pin and EMR(1), off-chip driver (OCD) impedance adjustment using EMR(1) register settings, and dual power domains (VDD/VDDQ/VDDL) with isolated grounds (VSS/VSSQ/VSSDL) to minimize switching noise in high-speed memory channels.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	1 Gbit (16,777,216 words × 8 banks × 8 bits)
Data Rate	1066 Mbps (DDR2-1066, 533 MHz clock, CL=6)
Supply Voltage	VDD = VDDQ = VDDL = 1.8 V ±0.1 V - requires tightly regulated 1.8 V rails with separate VDDQ and VDDL paths
CAS Latency	Programmable CL=3–7 - determines minimum read access delay relative to command issuance
Burst Length	Configurable BL=4 or BL=8 - defines number of consecutive data transfers per read/write command
tRCD / tRP	11.25 ns min (DDR2-1066 grade) - sets minimum row activation-to-command and precharge-to-activate intervals
Package	WBGA-60 (8 mm × 9.5 mm, 1.0 mm height, lead-free, RoHS compliant) - surface-mount BGA with 0.8 mm ball pitch
Operating Temp	0°C ≤ TCASE ≤ 85°C - commercial-grade thermal specification for stable operation in non-extreme environments

Pinout & Package

W971GG8NB-18 TR uses a 60-ball Window BGA (WBGA) package measuring 8 mm × 9.5 mm with 1.0 mm thickness and 0.8 mm ball pitch. The package employs lead-free, RoHS-compliant materials and separates analog/digital power and ground domains (VDD/VSS, VDDQ/VSSQ, VDDL/VSSDL) to suppress noise coupling in high-speed DDR2 interfaces.

Pin/Terminal	Circuit Role	Design Meaning
A0–A13	Address Inputs	Row/column address bus; A10 controls auto-precharge on read/write commands
BA0–BA2	Bank Select	Selects one of eight internal banks for active, read, write, or precharge operations
DQ0–DQ7	Data I/O	8-bit bidirectional data bus; SSTL_18 compatible with 1.8 V signaling
DQS / DQS	Differential Data Strobe	Source-synchronous strobe pair - edge-aligned with read data, center-aligned with write data
CLK / CLK	Differential Clock Input	Samples all address/control inputs at crossing points; defines system timing reference
CS, RAS, CAS, WE	Command Control	Encoded command bus - CS enables rank selection; RAS/CAS/WE define command type
ODT	On-Die Termination Enable	Active-HIGH signal enabling internal termination resistors to match line impedance
CKE	Clock Enable	Gates internal clock circuitry; LOW places device in power-down mode
DM/RDQS	Data Mask / Read Strobe	DM masks write data on both DQS edges; RDQS enabled via EMR(1)[A11] for differential read strobe
VREF	Input Reference Voltage	Reference for SSTL_18 input thresholds; must track VDDQ/2 ±300 mV
VDD / VDDQ / VDDL	Power Supplies	VDD: core logic; VDDQ: I/O drivers; VDDL: DLL circuit - each requires dedicated decoupling
VSS / VSSQ / VSSDL	Ground Planes	Isolated grounds per domain to prevent noise coupling between logic, I/O, and DLL circuits

Key Features

Feature	Design Value
DDR2-1066 Compliance	Fully conforms to JEDEC DDR2-1066 (6-6-6) timing spec - enables 1066 Mbps data rates in validated memory controllers
Programmable ODT & OCD	On-die termination resistance and off-chip driver impedance adjustable via EMR registers - eliminates external termination components and optimizes signal integrity
Dual-Mode Data Strobe	Supports both single-ended DQS and differential DQS/DQS modes - configurable via EMR(1)[A10] for flexible layout and noise immunity
Auto-Precharge & Burst Interrupt	Hardware auto-precharge after burst transfers and interruptible bursts (BL=8, RL=3) - reduces command overhead and improves memory bandwidth utilization
Multi-Temp Power Management	Self-refresh current capped at 8 mA up to 85°C; refresh interval halved (tREFI = 3.9 µS) above 85°C - ensures data retention across full operating range
WBGA-60 Footprint	8 mm × 9.5 mm, 0.8 mm pitch BGA - matches industry-standard DDR2 SDRAM land patterns for drop-in PCB compatibility

Applications

Industrial HMI Panels	Network Router Memory Buffers
Use Scenario: Touch-enabled human-machine interface with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Primary system memory storing GUI assets, firmware code, and buffered sensor logs; operates under continuous read/write cycles with burst transfers. Use Value: DDR2-1066 bandwidth meets frame buffer throughput demands while 8-bank architecture enables interleaved access to sustain >800 MB/s effective bandwidth.	Use Scenario: Packet buffering in Layer 3 enterprise routers handling 10 Gbps aggregate traffic with deep queueing requirements. IC Role / Device Role / Timing Role: High-bandwidth packet buffer memory interfaced to network processor's DDR2 controller; supports concurrent read-modify-write operations across multiple banks. Use Value: Programmable ODT and OCD allow precise impedance matching to PCB trace lengths, reducing signal reflections and enabling stable 1066 Mbps operation over 8-layer backplanes.
Medical Imaging Control Units	Automated Test Equipment (ATE)
Use Scenario: Real-time image acquisition and preprocessing in portable ultrasound systems with FPGA-based beamforming. IC Role / Device Role / Timing Role: Frame store memory for raw echo data; synchronized to FPGA's DDR2 PHY with strict tRCD/tRP timing adherence. Use Value: CL=6, tRCD=11.25 ns, and tRP=11.25 ns meet FPGA memory controller setup/hold margins while self-refresh mode preserves image buffers during standby.	Use Scenario: High-speed digital pattern memory in automated test equipment requiring deterministic read/write latency for stimulus generation. IC Role / Device Role / Timing Role: Pattern storage memory accessed by ASIC-based sequencer; relies on posted CAS (AL=1–2) to decouple command and data bus usage. Use Value: Posted CAS + AL=2 reduces command bus contention, enabling sustained 1066 Mbps throughput without pipeline stalls during burst-intensive test vector playback.

Industrial HMI Panels

Network Router Memory Buffers

Use Scenario: Touch-enabled human-machine interface with real-time graphics rendering and local data logging.

IC Role / Device Role / Timing Role: Primary system memory storing GUI assets, firmware code, and buffered sensor logs; operates under continuous read/write cycles with burst transfers.

Use Value: DDR2-1066 bandwidth meets frame buffer throughput demands while 8-bank architecture enables interleaved access to sustain >800 MB/s effective bandwidth.

Use Scenario: Packet buffering in Layer 3 enterprise routers handling 10 Gbps aggregate traffic with deep queueing requirements.

IC Role / Device Role / Timing Role: High-bandwidth packet buffer memory interfaced to network processor's DDR2 controller; supports concurrent read-modify-write operations across multiple banks.

Use Value: Programmable ODT and OCD allow precise impedance matching to PCB trace lengths, reducing signal reflections and enabling stable 1066 Mbps operation over 8-layer backplanes.

Medical Imaging Control Units

Automated Test Equipment (ATE)

Use Scenario: Real-time image acquisition and preprocessing in portable ultrasound systems with FPGA-based beamforming.

IC Role / Device Role / Timing Role: Frame store memory for raw echo data; synchronized to FPGA's DDR2 PHY with strict tRCD/tRP timing adherence.

Use Value: CL=6, tRCD=11.25 ns, and tRP=11.25 ns meet FPGA memory controller setup/hold margins while self-refresh mode preserves image buffers during standby.

Use Scenario: High-speed digital pattern memory in automated test equipment requiring deterministic read/write latency for stimulus generation.

IC Role / Device Role / Timing Role: Pattern storage memory accessed by ASIC-based sequencer; relies on posted CAS (AL=1–2) to decouple command and data bus usage.

Use Value: Posted CAS + AL=2 reduces command bus contention, enabling sustained 1066 Mbps throughput without pipeline stalls during burst-intensive test vector playback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H128M8HQ-37E:A	1 Gbit DDR2-800 (CL=5, tRCD=12.5 ns), 60-ball FBGA, -40°C to 85°C	Lower speed grade; requires controller reconfiguration for 800 Mbps operation and relaxed timing margins	Choose when thermal margin or cost optimization outweighs peak bandwidth needs; verify tREFI scaling at elevated temperature.
IS42S16160F-6BLI	256 M × 16-bit configuration (4 Gbit total), DDR2-667 (CL=5), 84-ball FBGA, -40°C to 85°C	Different density and bus width - requires PCB redesign and controller remapping for x16 interface	Select only if higher capacity or x16 interface is mandatory; not a pin-compatible replacement for W971GG8NB-18 TR.

Compared with MT47H128M8HQ-37E:A and IS42S16160F-6BLI, W971GG8NB-18 TR delivers higher bandwidth (1066 vs. 800/667 Mbps) in identical 60-ball WBGA footprint but lacks extended temperature support beyond 85°C - making it optimal for cost-sensitive, thermally managed commercial systems where DDR2-1066 performance is required.

Availability

W971GG8NB-18 TR is available at Aetrix Electronics and suitable for industrial HMI panels, network router memory buffers, and medical imaging control units requiring stable component supply, long-lifecycle availability, and JEDEC-compliant DDR2-1066 performance.

Supply support for W971GG8NB-18 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W971GG8NB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-effective, high-reliability memory subsystems in embedded networking, industrial automation, and medical electronics where DDR2 remains the preferred interface due to maturity and controller availability.

FAQ

What is the maximum data rate supported by W971GG8NB-18 TR?

W971GG8NB-18 TR supports DDR2-1066 operation at 1066 Mbps (533 MHz clock frequency), confirmed by its -18 speed grade designation and compliance with JEDEC DDR2-1066 (6-6-6) timing specifications including tRCD and tRP of 11.25 ns minimum. This data rate is achievable only when configured with CL=6 and operated within its specified 0°C to 85°C case temperature range.

Does W971GG8NB-18 TR support differential DQS operation?

Yes, W971GG8NB-18 TR supports differential DQS/DQS operation. The device includes dedicated DQS and DQS balls and enables differential strobe mode via EMR(1)[A10]=0. When enabled, DQS functions as a true differential pair edge-aligned with read data and center-aligned with write data - improving noise immunity in high-density PCB layouts.

What power supply rails does W971GG8NB-18 TR require?

W971GG8NB-18 TR requires three independent 1.8 V ±0.1 V supplies: VDD for core logic, VDDQ for I/O drivers, and VDDL for the DLL circuit. Each has dedicated ground returns (VSS, VSSQ, VSSDL) to isolate noise. VREF must be supplied at VDDQ/2 ±300 mV and remain valid before CKE assertion during initialization.

How is on-die termination (ODT) controlled on W971GG8NB-18 TR?

ODT on W971GG8NB-18 TR is controlled by both a dedicated ODT pin and EMR(1) register settings. The ODT pin (ball F9) enables termination when driven HIGH; its state is registered on the rising edge of CLK. Additionally, EMR(1) bits configure termination resistance values (75 Ω, 150 Ω, or off), allowing dynamic ODT control during operation without external hardware changes.

What is the package type and footprint compatibility of W971GG8NB-18 TR?

W971GG8NB-18 TR uses a 60-ball Window BGA (WBGA) package measuring 8 mm × 9.5 mm with 1.0 mm height and 0.8 mm ball pitch. Its pinout and mechanical dimensions conform to standard DDR2 SDRAM footprints, enabling direct PCB layout compatibility with other WBGA-60 DDR2 devices such as Micron MT47H series and ISSI IS42S variants.

W971GG8NB-18 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 60-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 1Gbit

Memory Organization:: 128M x 8

Memory Interface:: SSTL_18

Clock Frequency:: 533 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 58.125 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 60-VFBGA (8x9.5)

W971GG8NB-18 TR FAQ

1.How can I place an order for W971GG8NB-18 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W971GG8NB-18 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W971GG8NB-18 TR reliable?

The price and inventory of W971GG8NB-18 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG8NB-18 TR is usually 5 days.

3.What payment methods are accepted for W971GG8NB-18 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG8NB-18 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W971GG8NB-18 TR?

W971GG8NB-18 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W971GG8NB-18 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W971GG8NB-18 TR?

For technical support, including W971GG8NB-18 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG8NB-18 TR requirements.

6.How does Aetrix verify that W971GG8NB-18 TR is sourced from the original manufacturer or authorized distributors?

All W971GG8NB-18 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG8NB-18 TR meets industry standards.

7.What is the process for return or replacement of W971GG8NB-18 TR?

All W971GG8NB-18 TR units undergo pre-shipment inspection (PSI). If there is an issue with W971GG8NB-18 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W971GG8NB-18 TR part is unused and in its original packaging.

Return procedure for W971GG8NB-18 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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