My Inquiry
My Account
Winbond Electronics Corporation W971GG8NB25I TR
- Part No.:
- W971GG8NB25I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-VFBGA
- Datasheet:
-
W971GG8NB25I TR.pdf
- Description:
- IC DRAM 1GBIT SSTL 18 60VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W971GG8NB25I TR from Winbond is a 1G-bit DDR2 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V supply, industrial temperature range (−40°C to +95°C), and WBGA-60 package. It serves as main memory in embedded controllers, network processors, and industrial HMIs requiring reliable high-bandwidth data buffering.
For engineers reviewing the W971GG8NB25I TR datasheet, W971GG8NB25I TR pinout, W971GG8NB25I TR application, or W971GG8NB25I TR equivalent, key selection criteria include CAS latency support (CL=3–6), on-die termination (ODT) control, OCD impedance calibration, SSTL_18 interface compliance, and industrial-grade thermal reliability.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling stable 400 MHz (DDR2-800) operation under varying signal integrity conditions.
It supports programmable additive latency (AL=0–2), auto-precharge, burst lengths of 4 or 8, and multiple power management modes including precharged power down and self-refresh. ODT and OCD are controlled via extended mode registers (EMR1–EMR3), allowing dynamic impedance tuning without external components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16,777,216 words × 8 banks × 8 bits) |
| Data Rate | DDR2-800 (400 MHz clock, 800 Mbps per pin) |
| CAS Latency | Programmable CL = 3, 4, 5, or 6 - determines minimum read access delay in clock cycles |
| Burst Length | 4 or 8 - defines number of consecutive data transfers per read/write command |
| Supply Voltage | VDD/VDDQ = 1.8 V ± 0.1 V - requires tight regulation for signal integrity and timing margin |
| Operating Temp | −40°C to +95°C - qualified for industrial environments without derating |
| Interface Standard | SSTL_18 - mandates compatible driver/receiver termination and voltage reference (VREF = VDDQ/2) |
| Package | WBGA-60 (8 mm × 9.5 mm, 1.0 mm height, lead-free, RoHS) |
Pinout & Package
W971GG8NB25I TR uses a Window BGA (WBGA) package with 60 solder balls arranged in an 8×9.5 mm² footprint (1.0 mm thickness), optimized for high-density PCB layouts and thermal performance in industrial modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bus; A10 controls auto-precharge on read/write commands |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for concurrent operation and interleaving |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; supports burst transfers with DM masking |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe; edge-aligned with read data, center-aligned with write data |
| CLK / CLK | Differential Clock | Primary timing reference; all commands latched at crossing of CLK rising and CLK falling |
| CKE | Clock Enable | Controls clock tree activation; LOW disables internal clocks for power-down entry |
| CS | Chip Select | Enables command decoding; HIGH masks all commands for multi-rank isolation |
| RAS / CAS / WE | Command Control | Combined with CS to define active, read, write, precharge, refresh, and MRS operations |
| ODT | On-Die Termination | Activates internal termination resistors (75 Ω or 150 Ω) on DQ/DQS lines during reads/writes |
| DM/RDQS | Data Mask / Read Strobe | DM masks write data on both DQS edges; RDQS enables differential read strobe when configured |
| VREF | Input Reference | Reference for SSTL_18 input thresholds; must track VDDQ/2 ±30 mV for valid logic sampling |
| VDD / VDDQ / VDDL | Power Supplies | VDD (core), VDDQ (I/O), VDDL (DLL) each require independent 1.8 V ±0.1 V regulation |
| VSS / VSSQ / VSSDL | Ground Planes | Separate analog/digital grounds (VSSQ, VSSDL) minimize noise coupling to DQ and DLL circuits |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable 75 Ω or 150 Ω termination on DQ/DQS lines reduces stub reflections and eliminates external resistors |
| OCD Impedance Calibration | Off-chip driver output impedance matched to trace Z₀ via EMR1-controlled calibration sequence, improving signal fidelity |
| Posted CAS with AL | Additive latency (AL=0–2) decouples command bus occupancy from data return, increasing effective bandwidth in burst-heavy workloads |
| Auto-Precharge | Automatic bank precharge after burst completes - eliminates explicit PRE command overhead and simplifies controller logic |
| Self-Refresh Mode | Autonomous refresh at ≤8 mA current draw (TCASE ≤ 85°C) maintains data retention during host sleep without external timing control |
| Differential DQS | DQS/DQS pair enables robust source-synchronous timing at 400 MHz, supporting JEDEC-compliant DDR2-800 timing margins |
Applications
| Industrial HMI Memory Buffer | Network Processor Main Memory |
|---|---|
Use Scenario: Touch-enabled factory HMIs running real-time UI stacks with graphics overlays and local data logging. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A series SoCs, buffering frame buffers, firmware code, and configuration tables. Use Value: Industrial temperature rating (−40°C to +95°C) ensures uninterrupted operation in uncontrolled cabinet environments; ODT and OCD reduce layout sensitivity to trace length mismatches. | Use Scenario: Layer-3 switches performing packet classification, forwarding table lookups, and buffer management at line rate. IC Role / Device Role / Timing Role: Shared packet buffer memory for multi-core network processors, accessed concurrently across CPU and hardware accelerators. Use Value: Burst-length-8 and CL=5 support sustained 6.4 GB/s bandwidth; auto-precharge and posted CAS minimize command bus contention during high-throughput traffic bursts. |
| Medical Imaging Controller RAM | Automated Test Equipment (ATE) Data Capture |
Use Scenario: Portable ultrasound units capturing and processing real-time RF echo streams before display rendering. IC Role / Device Role / Timing Role: Frame buffer and intermediate processing memory for FPGA-based beamforming engines and DSP pipelines. Use Value: Differential DQS alignment and DLL tracking maintain timing closure across variable temperature gradients in handheld enclosures; SSTL_18 compatibility ensures interoperability with Xilinx Zynq-7000 I/O banks. | Use Scenario: High-speed digital pattern generators capturing multi-channel digital waveforms at 200+ MS/s for semiconductor validation. IC Role / Device Role / Timing Role: Deep capture buffer memory for ASIC-based acquisition engines, storing raw test vectors prior to compression and upload. Use Value: Precharged power-down mode reduces idle current to <10 µA while preserving data, extending battery life in portable ATE; tREFI = 7.8 µS guarantees JEDEC refresh compliance at full temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8HQ-25E IT | Same density (1G-bit), same DDR2-800 speed grade, but FBGA-60 (9 mm × 8 mm) package with different ball map and VREF requirement (VREF = VDDQ/2 ± 5% vs. ±30 mV) | Requires PCB redesign due to non-identical pinout and tighter VREF tolerance; validated for telecom baseband applications | Choose only if migrating from Micron platform with existing layout support and stricter VREF stability |
| IS42S16160F-25BLI | 16-bit bus width (vs. 8-bit), same industrial temp, but no OCD calibration and fixed ODT values (50/75/150 Ω); WBGA-60 package with partial pin compatibility | Supports higher bandwidth per cycle but demands wider data bus routing; lacks dynamic impedance tuning for marginal signal paths | Prefer when system bandwidth > 12.8 GB/s is required and board layout allows 16-bit DQ routing |
Compared with MT47H128M8HQ-25E IT and IS42S16160F-25BLI, W971GG8NB25I TR offers unique OCD calibration and relaxed VREF tracking (±30 mV), reducing external component count and easing layout for cost-sensitive industrial designs - while maintaining identical DDR2-800 timing and industrial thermal qualification.
Availability
W971GG8NB25I TR is available at Aetrix Electronics and suitable for industrial HMIs, network processors, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W971GG8NB25I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and mobile LPDRAM, with global manufacturing and quality certifications.
The W971GG8NB series targets cost-optimized, thermally robust DDR2 memory for industrial and embedded systems where long-term availability and JEDEC compliance outweigh cutting-edge bandwidth - designed specifically for applications needing DDR2-667/800/1066 operation without DDR3 migration complexity.
FAQ
What is the maximum supported CAS latency for W971GG8NB25I TR?
W971GG8NB25I TR supports programmable CAS latency values of CL = 3, 4, 5, or 6. At DDR2-800 speed (tCK = 2.5 ns min), CL = 6 corresponds to a 15 ns read access delay. The device does not support CL = 7 in this speed grade - that option is reserved for DDR2-1066 variants like W971GG8NB-18I.
Does W971GG8NB25I TR require external termination resistors?
No. W971GG8NB25I TR integrates configurable on-die termination (ODT) with selectable 75 Ω or 150 Ω pull-up/pull-down on DQ and DQS lines. When enabled via EMR2, ODT eliminates the need for external parallel termination, simplifying PCB layout and reducing BOM cost - provided the host controller asserts ODT control signals correctly.
How is OCD calibration performed on W971GG8NB25I TR?
OCD calibration on W971GG8NB25I TR is initiated by issuing an EMRS command to EMR(1) with A9=A8=A7=LOW, followed by execution of the OCD calibration flow after DLL reset and initialization. The process adjusts output driver impedance to match system trace impedance, and results are stored in the OCD register - no external calibration circuitry is needed.
Can W971GG8NB25I TR operate in self-refresh mode at +95°C?
Yes. W971GG8NB25I TR supports self-refresh mode across its full industrial temperature range (−40°C to +95°C), drawing ≤8 mA typical current. At temperatures above 85°C, JEDEC requires doubling the refresh frequency (tREFI = 3.9 µS), which is enabled automatically when A7 = "1" is set in EMR(2) during initialization - a mandatory step for +95°C operation.
What is the function of the DM/RDQS ball on W971GG8NB25I TR?
On W971GG8NB25I TR, the DM/RDQS ball serves dual functions: as DM (Data Mask) during write operations - sampling HIGH on both DQS edges to mask corresponding DQ bits - or as RDQS (Read Data Strobe) when enabled via EMR(1)[A11]=1 and differential strobe mode is active. When RDQS is enabled, DM functionality is disabled.
W971GG8NB25I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- SSTL_18
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9.5)
W971GG8NB25I TR FAQ
1.How can I place an order for W971GG8NB25I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG8NB25I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG8NB25I TR reliable?
The price and inventory of W971GG8NB25I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG8NB25I TR is usually 5 days.
3.What payment methods are accepted for W971GG8NB25I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG8NB25I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG8NB25I TR?
W971GG8NB25I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG8NB25I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG8NB25I TR?
For technical support, including W971GG8NB25I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG8NB25I TR requirements.
6.How does Aetrix verify that W971GG8NB25I TR is sourced from the original manufacturer or authorized distributors?
All W971GG8NB25I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG8NB25I TR meets industry standards.
7.What is the process for return or replacement of W971GG8NB25I TR?
All W971GG8NB25I TR units undergo pre-shipment inspection (PSI). If there is an issue with W971GG8NB25I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG8NB25I TR part is unused and in its original packaging.
Return procedure for W971GG8NB25I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG8NB25I TR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
