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Winbond Electronics Corporation W971GG8NB-25 TR
- Part No.:
- W971GG8NB-25 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-VFBGA
- Datasheet:
-
W971GG8NB-25 TR.pdf
- Description:
- IC DRAM 1GBIT SSTL 18 60VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,639
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Product details
Overview
W971GG8NB-25 TR from Winbond is a 1G-bit DDR2 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V ± 0.1 V supply, CAS latency configurable from 3 to 7, and SSTL_18 interface - deployed in embedded networking controllers and industrial HMIs requiring reliable synchronous DRAM buffering.
For engineers reviewing the W971GG8NB-25 TR datasheet, W971GG8NB-25 TR pinout, W971GG8NB-25 TR application, or W971GG8NB-25 TR equivalent, this page delivers verified DDR2 timing parameters, ball-level I/O mapping, OCD/ODT configuration support, and JEDEC-compliant thermal grade validation for -40°C to +85°C operation.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write strobing. It supports programmable additive latency (AL = 0–2), burst lengths of 4 or 8, and auto-precharge on read/write commands.
Functional control includes extended mode registers (EMR1–EMR3) for DLL enable/disable, OCD impedance calibration, ODT activation, and RDQS/DQS differential strobe selection. Power management features include precharged and active power-down modes, self-refresh (IDD6 ≤ 8 mA), and temperature-compensated refresh intervals down to 3.9 µS at 95–105°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16,777,216 words × 8 banks × 8 bits) |
| Data Rate | DDR2-800: up to 800 Mbps per pin (tCK min = 2.5 ns @ CL=5) |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7 - directly impacts read access timing and system timing margin |
| Burst Length | Configurable BL = 4 or 8 - determines consecutive data transfers per command |
| Supply Voltage | VDD/VDDQ = 1.8 V ± 0.1 V - requires tight regulation; VREF must track VDDQ/2 ± 300 mV |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C (commercial grade); supports full JEDEC AC/DC specs across range |
| Interface Standard | SSTL_18 - mandates compatible driver/receiver termination and voltage referencing |
| Refresh Interval | tREFI = 7.8 µS (≤ 85°C); halves to 3.9 µS above 85°C - requires controller-initiated refresh scheduling |
Pinout & Package
Packaged in 60-ball Window BGA (8 mm × 9.5 mm, 1.0 mm height), RoHS-compliant, lead-free. Ball pitch: 0.8 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Input | Row address (A0–A13); column address (A0–A9); A10 controls auto-precharge |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for ACTIVE/READ/WRITE/PRECHARGE commands |
| DQ0–DQ7 | Bi-directional Data Bus | 8-bit parallel I/O path; requires matched trace length and controlled impedance routing |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe; edge-aligned on reads, center-aligned on writes; enabled via EMR(1)[A10]=0 |
| CLK / CLK | Differential Clock Input | Defines all timing; inputs latched at crossing of CLK rising and CLK falling edges |
| CS, RAS, CAS, WE | Command Inputs | Encoded command bus; CS enables rank selection; all sampled on CLK edge |
| ODT | On-Die Termination Control | Active-HIGH signal enabling internal termination resistors (RTT = 75 Ω or 150 Ω) during reads/writes |
| DM/RDQS | Data Mask or Read Strobe | DM masks write data on both DQS edges; RDQS function enabled only when EMR(1)[A11]=1 |
| CKE | Clock Enable | Gates internal clocking; LOW disables DLL and enters power-down; HIGH resumes operation |
| VREF | Input Reference Voltage | Reference for all address/control inputs; must be stable at VDDQ/2 ± 300 mV |
| VDD / VDDQ / VDDL | Power Supplies | VDD (core), VDDQ (I/O), VDDL (DLL) each require independent 1.8 V ± 0.1 V regulation and local decoupling |
| VSS / VSSQ / VSSDL | Ground Planes | Separate ground domains for core (VSS), I/O (VSSQ), and DLL (VSSDL) minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Off-Chip Driver (OCD) Calibration | Enables precise output impedance tuning (±10%) via EMR(1), reducing signal reflections on high-speed traces |
| On-Die Termination (ODT) | Configurable RTT values (75 Ω or 150 Ω) activated per-command - eliminates external termination resistors and saves PCB area |
| Posted CAS with Additive Latency | AL = 0–2 allows pipelining of column commands before row activation completes, improving bus utilization in burst-heavy workloads |
| Differential DQS Strobes | DQS/DQS pair provides noise-immune, source-synchronous timing for both read (edge-aligned) and write (center-aligned) operations |
| Temperature-Adaptive Refresh | Automatic tREFI halving (7.8 µS → 3.9 µS) above 85°C ensures data retention without firmware intervention |
| Precharged Power-Down Mode | Reduces IDD1 current by >50% (to ~25 mA typical) while preserving bank state - ideal for low-duty-cycle HMI frame buffers |
Applications
| Industrial HMI Frame Buffer | Networking Router Packet Buffer |
|---|---|
Use Scenario: Real-time display rendering in factory-floor HMIs with 720p resolution and 60 Hz refresh. IC Role / Device Role / Timing Role: Primary frame buffer memory interfaced to ARM Cortex-A9-based SoC via 8-bit DDR2 bus; handles sequential burst reads for pixel streaming. Use Value: DDR2-800 bandwidth (≈6.4 GB/s peak) sustains full-resolution video overlay; OCD calibration ensures clean eye diagrams at 400 MHz clock. |
Use Scenario: Temporary storage of Ethernet packets in Layer 3 enterprise routers prior to forwarding decisions. IC Role / Device Role / Timing Role: Shared packet buffer for multiple MAC interfaces; accessed via DMA with interleaved read/write bursts. Use Value: Auto-precharge and posted CAS reduce command overhead; ODT dynamically terminates bus during bursts, minimizing inter-packet crosstalk. |
| Medical Imaging Control Panel | Automotive Infotainment Display Cache |
Use Scenario: Local UI rendering engine in diagnostic ultrasound systems with strict EMI and thermal constraints. IC Role / Device Role / Timing Role: Low-power DDR2 buffer for GUI assets and touch event queues; operates in precharged power-down between user interactions. Use Value: IDD6 ≤ 8 mA in self-refresh enables >24-hour standby; VSSQ/VSS isolation prevents analog front-end noise coupling. |
Use Scenario: Secondary display cache in head-unit systems supporting Android Automotive OS with dual-screen output. IC Role / Device Role / Timing Role: Dedicated graphics memory for secondary LCD; coexists with LPDDR2 main memory using separate AXI bus. Use Value: SSTL_18 compatibility simplifies level-shifting; 85°C-rated operation meets automotive cabin ambient requirements without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8CF-25:E | 128M × 8 organization (1 G-bit), same DDR2-800 speed grade, but uses 60-ball FBGA (8×10.5 mm) with different ball map | Requires PCB redesign due to non-identical pinout and larger footprint; supports deeper temperature range (-40°C to +95°C industrial) | Choose if industrial temp rating and Micron's long-term supply commitment outweigh layout change cost |
| IS43TR16128B-25BLI | 128M × 16 organization (2 G-bit), DDR2-800, 84-ball BGA; wider data bus but incompatible width and pin assignment | Not drop-in; requires bus-width adaptation in controller; higher density suits memory-constrained designs needing >1 G-bit | Consider only when migrating to 16-bit interface and requiring higher capacity - not a functional replacement |
Compared with MT47H128M8CF-25:E and IS43TR16128B-25BLI, the W971GG8NB-25 TR offers identical density and speed in a compact 8×9.5 mm WBGA package with validated OCD/ODT implementation, making it optimal for space-constrained commercial-grade embedded systems where pin compatibility and proven layout reuse are critical.
Availability
W971GG8NB-25 TR is available at Aetrix Electronics and suitable for industrial HMIs, networking packet buffers, medical UI controllers, and automotive infotainment displays requiring stable component supply and JEDEC-compliant DDR2-800 performance.
Supply support for W971GG8NB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial and embedded markets.
The W971GG8NB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems requiring JEDEC-compliant synchronous DRAM with robust power management and signal integrity features.
FAQ
What is the maximum supported CAS latency for W971GG8NB-25 TR?
The W971GG8NB-25 TR supports programmable CAS latency values of 3, 4, 5, 6, and 7. At DDR2-800 speed (tCK = 2.5 ns minimum), CL=5 is the default JEDEC setting; CL=7 is valid for relaxed timing margins in thermally stressed environments. All CL settings are validated across the full 0°C to 85°C operating range and require corresponding mode register programming via MRS command.
Does W971GG8NB-25 TR support differential DQS operation?
Yes, W971GG8NB-25 TR supports differential DQS/DQS strobes when enabled via Extended Mode Register 1 (EMR1) bit A10 = 0. In this mode, DQS (ball H8/H3) and DQS (ball J2/J8) operate as a true differential pair, providing improved jitter tolerance and signal integrity for write capture and read capture. The single-ended DQS mode remains available when EMR1[A10] = 1.
How is On-Die Termination (ODT) configured on W971GG8NB-25 TR?
ODT on W971GG8NB-25 TR is controlled by the ODT pin (ball F9) and configured via EMR1. When ODT = HIGH, internal termination resistors (RTT = 75 Ω or 150 Ω) are enabled on DQ/DQS lines during read or write operations. The specific RTT value is set in EMR1 bits A1–A0. ODT activation is command-specific and automatically disabled during idle cycles to minimize power consumption.
What is the purpose of the DM/RDQS pin (ball B3) on W971GG8NB-25 TR?
The DM/RDQS pin on W971GG8NB-25 TR serves dual functions: as DM (Data Mask) during write operations - masking individual byte lanes when sampled HIGH on both DQS edges - or as RDQS (Read Data Strobe) when enabled via EMR1[A11] = 1. When RDQS is active, it provides an additional strobe for read data capture, improving timing margin in high-noise environments. Enabling RDQS disables DM functionality.
Can W971GG8NB-25 TR operate in self-refresh mode at 85°C?
Yes, W971GG8NB-25 TR supports self-refresh mode across its full rated temperature range of 0°C to 85°C, with maximum IDD6 current ≤ 8 mA. At temperatures above 85°C, self-refresh remains functional but requires doubled refresh rate (tREFI = 3.9 µS), which must be enabled via EMR2[A7] = 1 - a feature reserved for industrial-grade variants (e.g., W971GG8NB-25I) and not guaranteed for the -25 commercial grade.
W971GG8NB-25 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- SSTL_18
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (8x9.5)
W971GG8NB-25 TR FAQ
1.How can I place an order for W971GG8NB-25 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG8NB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG8NB-25 TR reliable?
The price and inventory of W971GG8NB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG8NB-25 TR is usually 5 days.
3.What payment methods are accepted for W971GG8NB-25 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG8NB-25 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG8NB-25 TR?
W971GG8NB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG8NB-25 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG8NB-25 TR?
For technical support, including W971GG8NB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG8NB-25 TR requirements.
6.How does Aetrix verify that W971GG8NB-25 TR is sourced from the original manufacturer or authorized distributors?
All W971GG8NB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG8NB-25 TR meets industry standards.
7.What is the process for return or replacement of W971GG8NB-25 TR?
All W971GG8NB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W971GG8NB-25 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG8NB-25 TR part is unused and in its original packaging.
Return procedure for W971GG8NB-25 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG8NB-25 TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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