My Inquiry
My Account
Winbond Electronics Corporation W971GG8SB25I
- Part No.:
- W971GG8SB25I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W971GG8SB25I.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 60WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,391
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W971GG8SB25I from Winbond is a 1G-bit DDR2 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V ± 0.1 V supply, industrial temperature range (–40°C to +95°C), and SSTL_18 interface - deployed in embedded networking controllers and industrial HMIs requiring reliable synchronous memory with on-die termination.
For engineers reviewing the W971GG8SB25I datasheet, W971GG8SB25I pinout, W971GG8SB25I application, or W971GG8SB25I equivalent, key selection criteria include CAS latency support (CL=3–7), ODT programmability, OCD impedance calibration, burst length (4/8), and WBGA-60 package compatibility with JEDEC DDR2-800 layout constraints.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write strobing. It supports posted CAS (AL=0–2), auto-precharge, and both active and self-refresh modes.
Functional control includes mode register (MR) and three extended mode registers (EMR1–EMR3) for configuring ODT states, OCD calibration, DLL enable/disable, RDQS/DQS differential strobe mode, and additive latency - all accessed via BA0–BA2 address decoding and command encoding on RAS/CAS/WE/CS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (16,777,216 words × 8 banks × 8 bits) - supports 128 MB of byte-addressable storage per device. |
| Data Rate | DDR2-800 (400 MHz clock, 800 MT/s per pin) - enables 6.4 GB/s peak bandwidth across 64-bit bus. |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7 - determines minimum read access delay relative to column address strobe. |
| Burst Length | Fixed BL = 4 or 8 - defines number of consecutive data transfers per READ/WRITE command. |
| Supply Voltage | VDD/VDDQ = 1.8 V ± 0.1 V - requires tight-regulated 1.8 V rail; VREF must track VDDQ/2 ± 300 mV. |
| Operating Temp | –40°C ≤ TCASE ≤ +95°C - qualified for industrial environments without derating. |
| Package | WBGA-60 (8 mm × 12.5 mm, 0.8 mm pitch) - RoHS-compliant, lead-free, with isolated VSSQ/VDDL/VSSDL grounds. |
Pinout & Package
W971GG8SB25I uses a 60-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 12.5 mm with 0.8 mm ball pitch. Power and ground balls are segregated (VDD/VSS/VDDQ/VSSQ/VDDL/VSSDL) to minimize noise coupling between core, I/O, and DLL domains.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Input | Row/column address bus; A10 controls auto-precharge; A12/A13 support extended addressing. |
| BA0–BA2 | Bank Select | Selects one of eight internal banks for ACT/READ/WRITE/PRE commands. |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; SSTL_18 compatible; driven/received with DQS edge- or center-aligned. |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe; edge-aligned on reads, center-aligned on writes; enabled via EMR(1)[A10]=0. |
| CKE | Clock Enable | Asynchronous enable/disable of internal clock circuitry; LOW enters power-down mode. |
| CS | Chip Select | Active-Low command qualifier; masks all commands when HIGH; enables multi-rank addressing. |
| RAS / CAS / WE | Command Inputs | Encoded with CS to generate ACT, READ, WRITE, PRE, REF, MRS, EMRS, and NOP commands. |
| ODT | On-Die Termination Control | Dynamic termination enable (registered HIGH); configurable per EMR(1) for write/read line matching. |
| DM/RDQS | Data Mask / Read Strobe | Write mask input sampled on both DQS edges; RDQS function enabled via EMR(1)[A11]=1. |
| CLK / CLK | Differential Clock Input | Edge-triggered clock pair; all commands latched at CLK↑/CLK↓ crossing; drives DLL and timing engine. |
| VREF | Input Reference Voltage | Reference for address/control inputs; must be stable at VDDQ/2 ± 300 mV during ramp and operation. |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable pull-up/pull-down resistors (75 Ω, 150 Ω, etc.) on DQ/DQS lines - eliminates external termination components and improves signal integrity. |
| Off-Chip Driver (OCD) Calibration | Self-calibrating output driver impedance matching - reduces output skew and ensures consistent drive strength across voltage/temperature. |
| Posted CAS with Additive Latency | AL = 0–2 programmable - decouples command bus occupancy from data return timing, increasing command bus efficiency by up to 30%. |
| DLL-Based Clock Alignment | Digital Delay Lock Loop synchronizes DQ and DQS edges to CLK - enables stable 400 MHz operation with < ±50 ps jitter tolerance. |
| Multi-Temp Refresh Support | Auto-refresh interval adjusts from 7.8 µS (≤85°C) to 3.9 µS (>85°C) - maintains data retention across full industrial temperature range without host intervention. |
Applications
| Industrial HMI Controllers | Network Edge Routers |
|---|---|
|
Use Scenario: Real-time GUI rendering and local firmware execution in panel-mounted HMIs exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Primary program/data memory for ARM Cortex-A8/A9 SoCs; provides low-latency random access with deterministic tRCD/tRP timing. Use Value: Industrial temperature rating (–40°C to +95°C) and ODT-enabled signal integrity ensure reliable boot and operation without thermal throttling or layout rework. |
Use Scenario: Packet buffering and forwarding table storage in Layer 3 enterprise routers with dual 16-bit DDR2 interfaces. IC Role / Device Role / Timing Role: High-bandwidth, low-power working memory for network processors; supports burst-8 reads/writes at 800 MT/s with DM masking. Use Value: Programmable CAS latency (CL=5/6) and posted CAS allow tuning for latency-sensitive packet inspection versus throughput-optimized forwarding paths. |
| Medical Imaging Subsystems | Automated Test Equipment (ATE) |
|
Use Scenario: Frame buffer and lookup table storage in portable ultrasound and X-ray image acquisition modules. IC Role / Device Role / Timing Role: Sustained burst transfer memory for ADC data ingestion and FPGA-based image processing pipelines. Use Value: Self-refresh current ≤8 mA at ≤85°C enables low-power standby during idle scan periods without data loss or refresh controller overhead. |
Use Scenario: Pattern memory and result capture buffer in high-speed digital ATE platforms requiring deterministic timing margins. IC Role / Device Role / Timing Role: Synchronous, jitter-tolerant memory for pattern generators and response analyzers interfaced to FPGAs. Use Value: DLL alignment and OCD calibration maintain < ±75 ps setup/hold margin across –40°C to +95°C, enabling 100% test coverage at rated speed. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8HQ-25E | Same density (1 Gbit), same DDR2-800 speed grade, but FBGA-60 package with different ball map and no OCD calibration. | Requires PCB redesign due to non-identical pinout; lacks on-the-fly driver impedance tuning. | Choose only if existing layout uses Micron's footprint and system does not require dynamic drive strength adaptation. |
| IS42S16160F-25BLI | 16M × 16 organization (256 Mbit), 16-bit bus width; supports identical DDR2-800 timing but lower total capacity per device. | Needs two devices to match W971GG8SB25I's 8-bit × 128 MB capacity; higher interconnect count increases routing complexity. | Prefer for cost-sensitive designs where 128 MB is over-provisioned and board space allows dual-device placement. |
Compared with MT47H128M8HQ-25E and IS42S16160F-25BLI, W971GG8SB25I delivers unique value through its WBGA-60 footprint, integrated OCD calibration, and single-device 128 MB capacity - reducing BOM count and enabling tighter signal integrity control in space-constrained industrial layouts.
Availability
W971GG8SB25I is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging subsystems, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W971GG8SB25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
W971GG8SB25I belongs to Winbond's DDR2 SDRAM product line, engineered for robust operation in harsh environments with emphasis on signal integrity, thermal resilience, and JEDEC compliance without design compromises.
FAQ
What is the maximum supported CAS latency for W971GG8SB25I?
W971GG8SB25I supports programmable CAS latency values of CL = 3, 4, 5, 6, and 7. At DDR2-800 speed (400 MHz clock), CL=5 corresponds to a 12.5 ns delay, while CL=7 extends to 17.5 ns - allowing system designers to trade off latency versus timing margin based on board-level signal integrity and clock tree skew.
Does W971GG8SB25I support differential DQS operation?
Yes, W971GG8SB25I supports differential DQS/DQS operation when enabled via Extended Mode Register 1 (EMR1) bit A10 = 0. In this mode, DQS functions as a true differential strobe aligned with data, improving noise immunity and enabling reliable operation at DDR2-800 speeds on dense PCBs.
How is on-die termination (ODT) configured on W971GG8SB25I?
ODT on W971GG8SB25I is controlled by the ODT pin and configured via EMR1. The ODT pin must be registered HIGH to enable termination, and resistance values (e.g., 75 Ω, 150 Ω) are selected using EMR1 bits A1–A0. This allows dynamic ODT activation during writes and deactivation during reads to optimize signal integrity per access type.
What is the purpose of OCD calibration in W971GG8SB25I?
OCD (Off-Chip Driver) calibration in W971GG8SB25I adjusts output driver impedance to match transmission line characteristics. Initiated after power-up, it measures reference resistors and tunes drive strength - ensuring consistent DQ/DQS edge rates and minimizing reflections across voltage/temperature variations without external calibration hardware.
Can W971GG8SB25I operate in self-refresh mode at +95°C?
Yes, W971GG8SB25I supports self-refresh operation across its full industrial temperature range (–40°C to +95°C), with IDD6 ≤ 8 mA at TCASE ≤ 85°C and validated functionality up to +95°C. At >85°C, auto-refresh frequency doubles (tREFI = 3.9 µS), and self-refresh entry is guaranteed via EMR2 bit A7 = 1.
W971GG8SB25I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-WBGA (8x12.5)
W971GG8SB25I FAQ
1.How can I place an order for W971GG8SB25I through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG8SB25I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG8SB25I reliable?
The price and inventory of W971GG8SB25I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG8SB25I is usually 5 days.
3.What payment methods are accepted for W971GG8SB25I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG8SB25I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG8SB25I?
W971GG8SB25I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG8SB25I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG8SB25I?
For technical support, including W971GG8SB25I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG8SB25I requirements.
6.How does Aetrix verify that W971GG8SB25I is sourced from the original manufacturer or authorized distributors?
All W971GG8SB25I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG8SB25I meets industry standards.
7.What is the process for return or replacement of W971GG8SB25I?
All W971GG8SB25I units undergo pre-shipment inspection (PSI). If there is an issue with W971GG8SB25I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG8SB25I part is unused and in its original packaging.
Return procedure for W971GG8SB25I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG8SB25I Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
