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Winbond Electronics Corporation W971GG8SB-25 TR
- Part No.:
- W971GG8SB-25 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W971GG8SB-25 TR.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 60WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,356
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Product details
Overview
W971GG8SB-25 TR from Winbond is a 1G-bit DDR2 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V supply, SSTL_18 interface, and on-die termination (ODT) for signal integrity in memory subsystems of industrial embedded controllers and networking equipment.
For engineers reviewing the W971GG8SB-25 TR datasheet, W971GG8SB-25 TR pinout, W971GG8SB-25 TR application, or W971GG8SB-25 TR equivalent, key selection considerations include CAS latency (CL=5/6), tRCD/tRP = 12.5 ns minimum, ODT programmability, differential clock (CLK/CLK) support, and WBGA-60 package compatibility with JEDEC DDR2-800 systems.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing, posted CAS (AL=0–2), and programmable additive latency to decouple command bus efficiency from data access timing. It supports burst lengths of 4 and 8, bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes.
Functional operation includes auto-precharge, self-refresh, precharged/active power-down modes, OCD impedance calibration, and EMR-configurable ODT states. The device uses eight internal banks with BA0–BA2 addressing, A0–A13 row/column address multiplexing, and DM-based write masking - all compliant with JEDEC JESD79-2F DDR2 specification for DDR2-800 operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16M × 8 banks × 8 bits); supports 128 MB byte-addressable space in 8-bit wide configuration. |
| Data Rate | DDR2-800 (800 Mb/s per pin); requires 400 MHz differential clock input (tCK = 2.5 ns min for CL=5). |
| CAS Latency | Programmable CL = 5 or 6; determines minimum read access delay after column address assertion (tAA = CL × tCK). |
| Burst Length | Configurable BL = 4 or 8; defines number of consecutive data transfers per READ/WRITE command. |
| Supply Voltage | VDD/VDDQ = 1.8 V ± 0.1 V; strict tolerance ensures stable I/O and core logic operation under noise and load variation. |
| tRCD / tRP | 12.5 ns minimum; sets minimum delay between ACTIVE and READ/WRITE or PRECHARGE commands - critical for bank conflict avoidance. |
| ODT Support | On-die termination enabled via ODT pin; eliminates external resistors and improves signal integrity on high-speed DQ/DQS buses. |
Pinout & Package
W971GG8SB-25 TR is packaged in a RoHS-compliant, lead-free WBGA-60 (8 mm × 12.5 mm) ball grid array with 0.8 mm pitch. Ball assignment follows JEDEC-standard DDR2 layout optimized for signal integrity and thermal dissipation in dense PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Input | Row/column address multiplexed across 14 pins; A10 controls auto-precharge, A12/A13 support extended addressing. |
| BA0–BA2 | Bank Select | 3-bit field selecting one of eight internal banks for concurrent access and interleaving. |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; SSTL_18 compatible with controlled slew rate and drive strength. |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe pair; edge-aligned with read data, center-aligned with write data for timing margin. |
| CLK / CLK | Differential Clock Input | Primary timing reference; all commands latched at crossing of CLK rising and CLK falling edges. |
| CS / RAS / CAS / WE | Command Inputs | Encoded control bus defining ACTIVE, READ, WRITE, PRECHARGE, REFRESH, and MODE REGISTER operations. |
| ODT | On-Die Termination Enable | Active-high signal enabling internal termination resistors on DQ/DQS lines during reads/writes to suppress reflections. |
| CKE | Clock Enable | Gates internal clock distribution; LOW places device in power-down mode, preserving state without refresh. |
| DM / RDQS | Data Mask / Read Strobe | DM masks write data per DQ nibble; RDQS enables differential read strobe when configured via EMR(1). |
| VDD / VDDQ / VDDL | Power Supplies | VDD (core), VDDQ (I/O), VDDL (DLL) each at 1.8 V ± 0.1 V; isolated supplies reduce noise coupling between logic and I/O domains. |
| VSS / VSSQ / VSSDL | Ground Returns | Separate ground planes for core, I/O, and DLL minimize switching noise and improve jitter performance. |
| VREF | Input Reference Voltage | Mid-supply reference (VDDQ/2 ± 300 mV) for SSTL_18 input threshold setting; must be stable before initialization. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Latency | CL = 5 or 6 selectable via Mode Register; enables optimization for latency vs. bandwidth trade-offs in real-time systems. |
| On-Die Termination (ODT) | Configurable pull-up/pull-down termination on DQ/DQS lines; eliminates need for external resistors and reduces board-level signal integrity tuning effort. |
| Differential Clock Interface | CLK/CLK differential pair with crossing-edge sampling; improves noise immunity and enables robust timing closure at 400 MHz. |
| Auto-Precharge Function | Automatic bank precharge triggered by burst end; simplifies controller logic and prevents bank conflicts during sequential accesses. |
| OCD Impedance Calibration | Off-chip driver impedance matching via EMR(1); compensates for PCB trace variations to maintain consistent signal rise/fall times. |
| Self-Refresh Mode | Autonomous refresh with <8 mA current draw at TCASE ≤ 85°C; maintains data retention during system sleep without host intervention. |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic cycle times and extended temperature operation. IC Role / Device Role / Timing Role: Primary working memory for ladder logic execution and process variable storage; interfaces directly to ARM Cortex-M7 or RISC-V SoC memory controllers. Use Value: DDR2-800 bandwidth meets 100+ Mbps fieldbus throughput requirements while CL=5 timing ensures sub-100 ns read latency for fast scan cycles. | Use Scenario: Temporary packet storage in Layer 2/L3 Ethernet switches handling 1 Gbps line rates with deep buffer requirements. IC Role / Device Role / Timing Role: Shared packet buffer for ingress/egress queues; operated in bank-interleaved mode to sustain >600 MB/s sustained read/write throughput. Use Value: Eight-bank architecture and auto-precharge enable continuous burst transfers without bank conflicts, reducing packet drop under bursty traffic loads. |
| Medical Imaging Control Board | Automotive ADAS Camera Interface |
Use Scenario: Frame buffering and lookup table storage in ultrasound or X-ray image processing modules requiring EMI-robust memory interface. IC Role / Device Role / Timing Role: High-reliability DDR2 memory supporting dual-port access via memory-mapped peripherals; operates within -40°C to 85°C ambient range. Use Value: SSTL_18 signaling and ODT reduce crosstalk and ground bounce in mixed-signal medical PCBs, meeting IEC 60601-1 EMC limits. | Use Scenario: Raw sensor frame buffering in surround-view camera systems interfacing to TI TDA3x or NXP S32V234 vision processors. IC Role / Device Role / Timing Role: Low-latency video frame store with burst write capability for MIPI CSI-2 receiver pipelines; supports partial-frame updates via DM masking. Use Value: Write data mask (DM) allows selective pixel update without full-line overwrites, cutting memory bandwidth usage by up to 40% in dynamic scene regions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M8HQ-25E | Same density (1G-bit), same DDR2-800 speed grade, but FBGA-60 package with different ball map and VDDQ tolerance (1.8 V ± 0.09 V). | Requires PCB redesign due to non-identical pinout; supports wider temperature range (-40°C to 105°C) with industrial qualification. | Select when extended temperature operation or Micron's long-term supply commitment is prioritized over drop-in replacement. |
| IS42S16160F-25BLI | 16-bit wide (vs. 8-bit), 512 M-word organization; identical DDR2-800 timing and WBGA-60 footprint but incompatible data bus width. | Suitable only for 16-bit memory controllers; not interchangeable without hardware redesign or data bus splitting logic. | Choose only if system architecture mandates 16-bit data path and higher per-cycle bandwidth is required. |
Compared with W971GG8SB-25 TR, MT47H128M8HQ-25E offers broader temperature support but demands layout changes, while IS42S16160F-25BLI delivers double data width at same speed but breaks 8-bit compatibility - making W971GG8SB-25 TR optimal for cost-sensitive, pin-compatible DDR2-800 upgrades in existing 8-bit designs.
Availability
W971GG8SB-25 TR is available at Aetrix Electronics and suitable for industrial PLC memory buffers, network switch packet buffers, and medical imaging control boards requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR2-800 interoperability.
Supply support for W971GG8SB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.
The W971GG8SB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-optimized, high-reliability embedded systems requiring JEDEC-compliant DDR2-667/800/1066 operation with industrial temperature support and robust signal integrity features.
FAQ
What is the maximum operating frequency supported by the W971GG8SB-25 TR?
The W971GG8SB-25 TR supports DDR2-800 operation, meaning it achieves a data transfer rate of 800 Mb/s per pin. This requires a 400 MHz differential clock input (tCK = 2.5 ns minimum for CL=5). Its speed grade "-25" corresponds to this timing bin, and it is not rated for DDR2-1066 operation - that is reserved for the -18/-18I/-18J variants. The W971GG8SB-25 TR must be used within its specified AC parameters to ensure reliable burst reads and writes.
Does the W971GG8SB-25 TR support on-die termination (ODT), and how is it controlled?
Yes, the W971GG8SB-25 TR supports on-die termination (ODT) via the dedicated ODT pin (Ball F9). When driven HIGH, ODT enables internal termination resistors on the DQ and DQS lines to match transmission line impedance and suppress signal reflections. ODT state is registered synchronously with the clock, and its activation timing relative to commands is defined in the AC characteristics table (e.g., tODTon, tODTof). The W971GG8SB-25 TR does not support dynamic ODT control through mode registers - termination is strictly pin-controlled.
What is the purpose of the DM/RDQS pin (Ball B3) on the W971GG8SB-25 TR?
The DM/RDQS pin on the W971GG8SB-25 TR serves a dual function: as DM (Data Mask) during write operations and as RDQS (Read Data Strobe) when enabled via Extended Mode Register 1 (EMR(1)[A11]=1). As DM, it masks individual bytes of write data sampled on both edges of DQS. As RDQS, it provides a differential strobe for read data - but only when differential DQS mode is also enabled (EMR(1)[A10]=0). In standard single-ended DQS mode, DM functionality remains active and RDQS is disabled. This dual-role pin reduces ball count while maintaining flexibility.
Can the W971GG8SB-25 TR operate in self-refresh mode, and what is its typical current draw?
Yes, the W971GG8SB-25 TR supports self-refresh mode, which maintains data integrity autonomously using an internal timer and refresh counter without external command input. At case temperatures ≤ 85°C, its maximum IDD6 (self-refresh current) is 8 mA. This low-power state is entered via the Self Refresh Entry command and exited via Self Refresh Exit, allowing the host controller to suspend activity while preserving memory contents - essential for battery-backed or low-power standby operation in devices using the W971GG8SB-25 TR.
What package type and dimensions does the W971GG8SB-25 TR use, and is it RoHS-compliant?
The W971GG8SB-25 TR uses a WBGA-60 (Wafer-Level Ball Grid Array) package measuring 8 mm × 12.5 mm with 0.8 mm ball pitch. It is constructed with lead-free materials and fully complies with RoHS Directive 2011/65/EU. The package features separate VDD, VDDQ, and VDDL power balls, plus isolated VSS, VSSQ, and VSSDL grounds to minimize noise coupling - a design choice critical for stable DDR2-800 operation. No thermal pad or exposed die attach is present; thermal dissipation relies on solder joint conduction and PCB copper area.
W971GG8SB-25 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-WBGA (8x12.5)
W971GG8SB-25 TR FAQ
1.How can I place an order for W971GG8SB-25 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W971GG8SB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W971GG8SB-25 TR reliable?
The price and inventory of W971GG8SB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W971GG8SB-25 TR is usually 5 days.
3.What payment methods are accepted for W971GG8SB-25 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W971GG8SB-25 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W971GG8SB-25 TR?
W971GG8SB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W971GG8SB-25 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W971GG8SB-25 TR?
For technical support, including W971GG8SB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W971GG8SB-25 TR requirements.
6.How does Aetrix verify that W971GG8SB-25 TR is sourced from the original manufacturer or authorized distributors?
All W971GG8SB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W971GG8SB-25 TR meets industry standards.
7.What is the process for return or replacement of W971GG8SB-25 TR?
All W971GG8SB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W971GG8SB-25 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W971GG8SB-25 TR part is unused and in its original packaging.
Return procedure for W971GG8SB-25 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W971GG8SB-25 TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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Microchip Technology
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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