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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W9725G6KB-18 TR

Name: W9725G6KB-18 TR
Brand: Winbond Electronics Corporation
SKU: W9725G6KB-18 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W9725G6KB-18 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 84-TFBGA

Datasheet:: W9725G6KB-18 TR.pdf

Description:: IC DRAM 256MBIT PAR 84WBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W9725G6KB-18 TR from Winbond is a 256M-bit DDR2 SDRAM organized as 4M × 4 banks × 16-bit, operating at DDR2-1066 speed (7-7-7 timing), with 1.8 V ±0.1 V supply, SSTL_18 interface, and on-die termination (ODT) for high-speed memory subsystems in embedded networking and industrial control applications.

For engineers reviewing the W9725G6KB-18 TR datasheet, W9725G6KB-18 TR pinout, W9725G6KB-18 TR application, or W9725G6KB-18 TR equivalent, this device supports CAS latencies of 3–7, burst lengths of 4/8, posted CAS, auto-precharge, and differential DQS strobes - critical for timing-critical DDR2 memory channel design and JEDEC-compliant layout validation.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous data capture. It uses bi-directional DQS strobes (UDQS/LDQS) edge-aligned on reads and center-aligned on writes, supporting both single-ended and differential DQS modes via EMR(1) configuration.

The device integrates OCD impedance calibration, programmable ODT, and four independent banks with bank-select addressing (BA0/BA1). Its command decoder interprets RAS/CAS/WE/CS on every rising CLK edge, enabling precise control over active, read/write, precharge, refresh, and power-down operations - all compliant with JEDEC JESD79-2F DDR2 specification.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	256 Mbit (4,194,304 words × 4 banks × 16 bits)
Data Rate	DDR2-1066: 533 MHz clock → 1066 MT/s per pin
CAS Latency	Programmable CL = 3, 4, 5, 6, or 7 - determines minimum read access latency in clock cycles
Burst Length	Fixed 4 or 8 - defines number of consecutive data transfers per read/write command
Supply Voltage	VDD/VDDQ = 1.8 V ±0.1 V - strict tolerance required for signal integrity and ODT calibration stability
Interface Standard	SSTL_18 - mandates 1.8 V I/O voltage reference and compatible driver/receiver design
Operating Temp	0°C ≤ TCASE ≤ 85°C - commercial-grade thermal envelope for industrial control and networking gear
Package	WBGA-84 (8 mm × 12.5 mm, 0.8 mm pitch) - fine-pitch ball grid array optimized for high-density PCB routing

Pinout & Package

W9725G6KB-18 TR is housed in an 84-ball WBGA package (8 mm × 12.5 mm, 0.8 mm pitch), RoHS-compliant and lead-free, with separate VDD/VDDQ and VSS/VSSQ power/ground domains for noise isolation and signal integrity.

Pin/Terminal	Circuit Role	Design Meaning
A0–A12	Address Inputs	Row address (A0–A12) and column address (A0–A8); A10 controls auto-precharge enable
BA0, BA1	Bank Select	Selects one of four internal banks for activation, read, write, or precharge commands
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; DQ0–DQ7 tied to LDQS, DQ8–DQ15 tied to UDQS
UDQS, LDQS	Differential Data Strobe	Source-synchronous strobes: edge-aligned on reads, center-aligned on writes; enabled via EMR(1)
CKE	Clock Enable	Asynchronous gate controlling internal clock circuitry; LOW disables DLL and enters power-down
CS, RAS, CAS, WE	Command Control	JEDEC-standard command encoding inputs sampled on every CLK rising edge
ODT	On-Die Termination	Active-HIGH input enabling internal termination resistors (75 Ω or 150 Ω) on DQ/DQS lines
CLK, CLK	Differential Clock	Primary timing reference; all commands latched at crossing of CLK rising / CLK falling edges
VREF	Input Reference	Reference voltage for address/control inputs; must track VDDQ/2 ±300 mV for valid logic thresholds

Key Features

Feature	Design Value
Posted CAS with AL	Additive Latency (AL = 0–2) decouples command issuance from data availability, improving bus efficiency in pipelined systems
OCD Impedance Calibration	Off-chip driver impedance matching (±10% accuracy) reduces signal reflections without external resistors
Programmable ODT	Configurable on-die termination (75 Ω or 150 Ω) per DQ/DQS group eliminates need for external termination networks
Auto-Precharge	Automatic bank precharge after burst read/write eliminates explicit PRE command overhead and simplifies controller logic
Self-Refresh Mode	Autonomous refresh during CKE = LOW maintains data integrity with IDD7 ≤ 6 mA - critical for low-power standby
Power-Down Modes	Precharged and active power-down reduce IDD1/IDD0 by >50% during idle cycles without losing state

Applications

Industrial PLC Memory Buffer	Network Switch Packet Buffer
Use Scenario: Real-time deterministic data buffering in programmable logic controllers handling multi-axis motion control and fieldbus I/O. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O data staging, interfaced to ARM Cortex-M7 or RISC-V SoC via 16-bit DDR2 controller. Use Value: DDR2-1066 bandwidth (1.7 GB/s peak) sustains concurrent analog sampling, CAN FD messaging, and EtherCAT frame processing without memory bottleneck.	Use Scenario: Temporary storage of ingress/egress Ethernet frames in Layer 2 managed switches with 10/100/1000BASE-T ports. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed by multiple MAC engines and QoS schedulers, requiring low-latency random access and burst coalescing. Use Value: 4-bank interleaving and auto-precharge enable simultaneous read-modify-write operations across banks, reducing average access latency by up to 40% vs. single-bank SDRAM.
Medical Imaging Front-End Buffer	Automotive ADAS Camera Interface
Use Scenario: Line-buffering raw sensor data from high-resolution CMOS image sensors in ultrasound or digital X-ray systems before FPGA-based beamforming or compression. IC Role / Device Role / Timing Role: High-throughput streaming memory with deterministic tRCD/tRP (13.125 ns min) to meet real-time DMA deadlines under varying load. Use Value: SSTL_18 interface and calibrated OCD ensure clean 533 MHz clock domain transitions, minimizing bit errors in 16-bit parallel pixel pipelines.	Use Scenario: Frame buffering for surround-view camera fusion in automotive ADAS ECUs, where multiple 1–2 MP streams are synchronized and stitched. IC Role / Device Role / Timing Role: Low-latency, temperature-stable memory for time-critical vision preprocessing, operating within 0°C–85°C ambient range. Use Value: Industrial-grade DDR2-1066 timing margin (7-7-7) guarantees reliable operation across vehicle thermal cycles without dynamic recalibration.

Industrial PLC Memory Buffer

Network Switch Packet Buffer

Use Scenario: Real-time deterministic data buffering in programmable logic controllers handling multi-axis motion control and fieldbus I/O.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O data staging, interfaced to ARM Cortex-M7 or RISC-V SoC via 16-bit DDR2 controller.

Use Value: DDR2-1066 bandwidth (1.7 GB/s peak) sustains concurrent analog sampling, CAN FD messaging, and EtherCAT frame processing without memory bottleneck.

Use Scenario: Temporary storage of ingress/egress Ethernet frames in Layer 2 managed switches with 10/100/1000BASE-T ports.

IC Role / Device Role / Timing Role: Shared packet buffer memory accessed by multiple MAC engines and QoS schedulers, requiring low-latency random access and burst coalescing.

Use Value: 4-bank interleaving and auto-precharge enable simultaneous read-modify-write operations across banks, reducing average access latency by up to 40% vs. single-bank SDRAM.

Medical Imaging Front-End Buffer

Automotive ADAS Camera Interface

Use Scenario: Line-buffering raw sensor data from high-resolution CMOS image sensors in ultrasound or digital X-ray systems before FPGA-based beamforming or compression.

IC Role / Device Role / Timing Role: High-throughput streaming memory with deterministic tRCD/tRP (13.125 ns min) to meet real-time DMA deadlines under varying load.

Use Value: SSTL_18 interface and calibrated OCD ensure clean 533 MHz clock domain transitions, minimizing bit errors in 16-bit parallel pixel pipelines.

Use Scenario: Frame buffering for surround-view camera fusion in automotive ADAS ECUs, where multiple 1–2 MP streams are synchronized and stitched.

IC Role / Device Role / Timing Role: Low-latency, temperature-stable memory for time-critical vision preprocessing, operating within 0°C–85°C ambient range.

Use Value: Industrial-grade DDR2-1066 timing margin (7-7-7) guarantees reliable operation across vehicle thermal cycles without dynamic recalibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H64M16HR-37E	64M × 16-bit, DDR2-800 (6-6-6), 96-ball FBGA, 1.8 V, same pinout but larger package	Lower bandwidth (1.28 GB/s), wider temperature range (-40°C to +95°C), higher pin count	Choose for extended temp support and compatibility with Micron-based reference designs; not drop-in due to package size and ball count mismatch.
IS42S16160F-6BLI	64M × 16-bit, DDR2-667 (5-5-5), 60-ball TSOP-II, 1.8 V, no differential DQS support	Slower speed grade, legacy TSOP packaging, lacks ODT/OCD, requires external termination	Choose for cost-sensitive, space-tolerant designs where DDR2-667 bandwidth suffices and board layout allows discrete termination.

Compared with MT47H64M16HR-37E and IS42S16160F-6BLI, W9725G6KB-18 TR delivers highest bandwidth in smallest footprint with integrated signal integrity features - making it optimal for new compact DDR2 designs requiring JEDEC-compliant 1066 MT/s performance without external tuning components.

Availability

W9725G6KB-18 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-lifecycle support, and full traceability.

Supply support for W9725G6KB-18 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and DRAM solutions for industrial, automotive, and communications markets.

The W9725G6KB-18 TR belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-effective, high-reliability memory subsystems in resource-constrained embedded systems requiring JEDEC-compliant DDR2-1066 performance.

FAQ

What is the maximum data rate supported by the W9725G6KB-18 TR?

The W9725G6KB-18 TR supports DDR2-1066 operation, achieving a maximum data transfer rate of 1066 megatransfers per second per pin. This corresponds to a 533 MHz differential clock frequency and requires compliance with tCK = 1.875 ns minimum (CL=7) and tight AC timing margins including tRCD and tRP of 13.125 ns minimum.

Does the W9725G6KB-18 TR support on-die termination (ODT)?

Yes, the W9725G6KB-18 TR supports programmable on-die termination via the ODT pin. When asserted HIGH, it enables internal termination resistors (75 Ω or 150 Ω, configurable via EMR) on DQ and DQS lines - eliminating the need for external termination resistors and improving signal integrity in point-to-point DDR2 channels.

What is the required power-up initialization sequence for the W9725G6KB-18 TR?

The W9725G6KB-18 TR requires a strict 13-step JEDEC-compliant power-up sequence: stable 1.8 V supplies, ≥200 µs clock stabilization, CKE assertion, precharge-all, three EMRS commands (EMR2→EMR3→EMR1 DLL enable), DLL reset, additional precharge and refresh, and final MRS programming. Skipping any step risks undefined behavior or initialization failure.

Can the W9725G6KB-18 TR operate with single-ended DQS instead of differential DQS?

Yes, the W9725G6KB-18 TR supports both single-ended and differential DQS modes. Differential mode (UDQS/LDQS) is enabled via EMR(1) bit A10; when disabled, only single-ended LDQS is used for DQ0–DQ7, and UDQS is unused. This flexibility allows compatibility with controllers lacking differential strobe support.

What package type and dimensions does the W9725G6KB-18 TR use?

The W9725G6KB-18 TR uses an 84-ball WBGA package measuring 8 mm × 12.5 mm with 0.8 mm ball pitch. It features separate VDD/VDDQ and VSS/VSSQ power/ground balls, dedicated DLL supply (VDDL) and ground (VSSDL), and RoHS-compliant lead-free construction - optimized for high-density, noise-sensitive DDR2 layouts.

W9725G6KB-18 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 84-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 256Mbit

Memory Organization:: 16M x 16

Memory Interface:: Parallel

Clock Frequency:: 533 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 58.125 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 84-WBGA (8x12.5)

W9725G6KB-18 TR FAQ

1.How can I place an order for W9725G6KB-18 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9725G6KB-18 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9725G6KB-18 TR reliable?

The price and inventory of W9725G6KB-18 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9725G6KB-18 TR is usually 5 days.

3.What payment methods are accepted for W9725G6KB-18 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9725G6KB-18 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9725G6KB-18 TR?

W9725G6KB-18 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9725G6KB-18 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9725G6KB-18 TR?

For technical support, including W9725G6KB-18 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9725G6KB-18 TR requirements.

6.How does Aetrix verify that W9725G6KB-18 TR is sourced from the original manufacturer or authorized distributors?

All W9725G6KB-18 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9725G6KB-18 TR meets industry standards.

7.What is the process for return or replacement of W9725G6KB-18 TR?

All W9725G6KB-18 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9725G6KB-18 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9725G6KB-18 TR part is unused and in its original packaging.

Return procedure for W9725G6KB-18 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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