Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Winbond Electronics Corporation W9725G8KB-18

Part No.:
W9725G8KB-18
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
60-TFBGA
Datasheet:
AetrixW9725G8KB-18.pdf
Description:
IC DRAM 256MBIT PAR 60WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,560

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

W9725G8KB-18 from Winbond Electronics is a 256M-bit DDR2 SDRAM organized as 8,388,608 words × 4 banks × 8 bits, operating at 1.8 V ± 0.1 V with DDR2-1066 (7-7-7) timing, CAS latency 3–7, and burst lengths of 4 or 8. It serves as main system memory in embedded controllers and industrial SoC platforms requiring synchronous, high-bandwidth data buffering.

For engineers reviewing the W9725G8KB-18 datasheet, W9725G8KB-18 pinout, W9725G8KB-18 application, or W9725G8KB-18 equivalent, key selection criteria include its SSTL_18 interface compliance, on-die termination (ODT), OCD impedance calibration, differential clock (CLK/CLK) and data strobe (DQS/DQS) support, and -40°C to +85°C industrial temperature rating.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous I/O referenced to both edges of DQS. It supports posted CAS (AL = 0–2), auto-precharge, and programmable write latency (WL = RL − 1).

Functional operation relies on four independent banks, mode register (MR) and extended mode registers (EMR1–EMR3) for configuration of ODT, OCD, DLL enable/disable, RDQS, and additive latency. Initialization requires strict power-up sequencing including EMRS commands to EMR(2), EMR(3), and EMR(1) for DLL enable before MRS programming.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density256 Mbit (8M × 4 banks × 8 bit)
Data Rate1066 Mb/sec/pin (DDR2-1066, tCK min = 1.875 ns @ CL=7)
Voltage SupplyVDD/VDDQ/VDDL = 1.8 V ± 0.1 V; VREF tracks VDDQ/2
CAS LatencyProgrammable CL = 3, 4, 5, 6, or 7; determines minimum read access delay
Burst LengthFixed BL = 4 or 8; defines number of consecutive data transfers per command
Interface StandardSSTL_18-compliant inputs/outputs with differential clock and strobe signaling
Operating Temp0°C ≤ TCASE ≤ 85°C - validated for industrial ambient conditions
Power ModesActive Power Down, Precharged Power Down, Self Refresh (IDD6 ≤ 6 mA)

Pinout & Package

Packaged in RoHS-compliant, lead-free WBGA-60 (8 mm × 12.5 mm) with 0.8 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
A0–A12Address InputRow address (A0–A12); column address (A0–A9); A10 controls auto-precharge
BA0, BA1Bank SelectSelects one of four internal banks for active/read/write/precharge commands
DQ0–DQ7Data I/O8-bit bidirectional data bus; SSTL_18 compliant; isolated VSSQ ground improves noise immunity
DQS, DQSDifferential Data StrobeSource-synchronous edge-aligned read strobe / center-aligned write strobe; enabled via EMR(1)[A10]=0
CLK, CLKDifferential Clock InputSampling reference for all address/control inputs; crossing points define timing windows
CS, RAS, CAS, WECommand InputsEncoded command set (e.g., ACTIVE, READ, WRITE, PRECHARGE ALL) with CS enabling rank selection
ODTOn-Die Termination ControlRegistered HIGH enables internal termination resistor; reduces stub reflections on DQ/DQS lines
DM/RDQSData Mask or Read StrobeDM masks write data on both DQS edges; RDQS outputs read strobe when EMR(1)[A11]=1
CKEClock EnableRegistered HIGH activates internal clock circuitry; LOW enters power-down states
VREFInput Reference VoltageReference for SSTL_18 input thresholds; must track VDDQ/2 within ±300 mV

Key Features

FeatureDesign Value
On-Die Termination (ODT)Configurable termination resistance on DQ/DQS lines eliminates external resistors and improves signal integrity
Off-Chip Driver (OCD) CalibrationDynamic impedance matching between DRAM output drivers and PCB trace impedance reduces overshoot/undershoot
DLL-Based Timing AlignmentDigital delay-locked loop aligns DQ and DQS transitions to CLK/CLK crossings for stable setup/hold margins
Programmable Additive Latency (AL)AL = 0, 1, or 2 allows pipelining of CAS commands ahead of row activation to improve bus utilization
Auto-Precharge SupportAutomatic bank precharge after burst read/write eliminates explicit PRE command overhead in sequential access patterns
Multiple Power-Down ModesPrecharged and Active Power Down reduce IDD1/IDD0 current by >50% during idle cycles without losing state

Applications

Industrial HMI Controller MemoryNetwork Router Packet Buffer

Use Scenario: Real-time display rendering and touch response in factory-floor HMIs with ARM Cortex-A8/A9 SoCs.

IC Role / Device Role / Timing Role: Primary working memory interfaced directly to SoC AXI bus; operates at DDR2-1066 with CL=5 for sub-20 ns read latency.

Use Value: SSTL_18 compatibility and ODT ensure clean signal integrity across 4-layer PCB traces up to 8 cm; OCD calibration compensates for board-level impedance variation.

Use Scenario: Temporary storage of fragmented Ethernet frames in Layer 3 routing ASICs with bursty traffic profiles.

IC Role / Device Role / Timing Role: High-throughput packet buffer supporting concurrent read-modify-write operations across four independent banks.

Use Value: Four-bank architecture enables interleaved access (e.g., bank 0 read while bank 1 writes), sustaining >800 MB/s effective bandwidth under mixed workloads.

Medical Imaging System Frame StoreAutomotive ADAS Video Preprocessor Buffer

Use Scenario: Intermediate frame storage in ultrasound or digital X-ray systems where image buffers must retain data integrity during intermittent processing bursts.

IC Role / Device Role / Timing Role: Non-volatile frame buffer holding 1–2 full-resolution images (1024×768×16bpp) with self-refresh mode active during CPU sleep cycles.

Use Value: Self-refresh current limited to 6 mA at 85°C enables thermal-safe operation inside sealed enclosures without forced cooling.

Use Scenario: Real-time pixel reformatting and color-space conversion in rear-view camera modules using TI Jacinto or NXP S32G processors.

IC Role / Device Role / Timing Role: Low-latency video line buffer supporting 60 fps HD capture with minimal pipeline stall; uses posted CAS (AL=1) to hide tRCD delays.

Use Value: Programmable CL=3/4/5 allows tuning for worst-case timing margin in automotive-grade PCB layouts with tight skew control on DQS-to-CLK paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT47H64M4BP-37E64M × 4 organization (256 Mbit), same -37E speed grade (DDR2-1066), but uses TSOP-66 package and lacks OCD calibrationRequires external termination resistors and manual layout tuning for signal integrity; not suitable for high-density BGA-only designsSelect W9725G8KB-18 when WBGA footprint, on-die impedance control, and industrial temp range are mandatory
IS42S16400F-6BL16M × 16 organization (256 Mbit), -6BL speed grade (DDR2-800), supports CL=3/4/5 but no EMR(2)/EMR(3) for advanced ODT configurationLimited to DDR2-800 max; lacks DLL enable/disable and OCD fine-tuning; only basic ODT modes supportedChoose W9725G8KB-18 for DDR2-1066 performance, full EMR configurability, and robust initialization sequence compliance

Compared with MT47H64M4BP-37E and IS42S16400F-6BL, the W9725G8KB-18 delivers superior signal integrity via OCD calibration and flexible ODT control, supports higher data rates with guaranteed DDR2-1066 timing, and provides industrial-grade thermal reliability in compact WBGA packaging - critical for space-constrained, thermally demanding embedded systems.

Availability

W9725G8KB-18 is available at Aetrix Electronics and suitable for industrial HMI controllers, network infrastructure packet buffers, medical imaging frame stores, and automotive ADAS video preprocessors requiring stable component supply across multi-year production cycles.

Supply support for W9725G8KB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W9725G8KB-18 belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for reliable, long-lifecycle operation in temperature-stressed embedded systems with stringent signal integrity and power management requirements.

FAQ

What is the maximum data rate supported by the W9725G8KB-18?

The W9725G8KB-18 supports DDR2-1066 operation with a minimum clock period (tCK) of 1.875 ns at CAS Latency 7, delivering up to 1066 Mb/sec per pin. This speed grade is validated under industrial temperature conditions (0°C to 85°C) and requires adherence to specified AC timing parameters including tRCD ≥ 13.125 ns and tRP ≥ 13.125 ns.

Does the W9725G8KB-18 support on-die termination (ODT)?

Yes, the W9725G8KB-18 supports programmable on-die termination via the ODT pin and extended mode register EMR(1). When ODT is asserted HIGH, internal termination resistors are enabled on DQ and DQS lines to suppress reflections, eliminating the need for external parallel termination and improving signal integrity in point-to-point or fly-by topologies.

How is the W9725G8KB-18 initialized after power-up?

The W9725G8KB-18 requires a strict 13-step initialization sequence: stable power ramp, 200 µs clock stabilization, CKE assertion, precharge all, three EMRS commands (to EMR(2), EMR(3), and EMR(1) for DLL enable), DLL reset, second precharge all, two auto-refresh commands, final MRS, and OCD calibration. Skipping any step may result in undefined behavior or initialization failure.

What package type and ball count does the W9725G8KB-18 use?

The W9725G8KB-18 uses a RoHS-compliant, lead-free WBGA-60 package measuring 8 mm × 12.5 mm with 0.8 mm ball pitch. Its 60-ball layout includes dedicated VDDQ/VSSQ planes for I/O noise isolation, differential clock (CLK/CLK) and strobe (DQS/DQS) pairs, and NC balls for mechanical reinforcement and thermal relief.

Can the W9725G8KB-18 operate with CAS Latency 3?

Yes, the W9725G8KB-18 supports CAS Latency 3 at lower frequencies (e.g., DDR2-667 or DDR2-800), with tCK min = 5 ns. At DDR2-1066 speed, CL=3 is not supported; the minimum valid CL for -18 speed grade is CL=5 (tCK min = 3 nS) or CL=7 (tCK min = 1.875 nS), per the device's AC timing specifications in the official datasheet.

W9725G8KB-18 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
60-TFBGA
Packaging:
Tray
Product Status:
Not For New Designs
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR2
Memory Size:
256Mbit
Memory Organization:
32M x 8
Memory Interface:
Parallel
Clock Frequency:
533 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
58.125 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
60-WBGA (8x12.5)

W9725G8KB-18 FAQ

1.How can I place an order for W9725G8KB-18 through Aetrix?

Please submit a Request for Quotation (RFQ) for W9725G8KB-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9725G8KB-18 reliable?

The price and inventory of W9725G8KB-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9725G8KB-18 is usually 5 days.

3.What payment methods are accepted for W9725G8KB-18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9725G8KB-18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9725G8KB-18?

W9725G8KB-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9725G8KB-18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9725G8KB-18?

For technical support, including W9725G8KB-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9725G8KB-18 requirements.

6.How does Aetrix verify that W9725G8KB-18 is sourced from the original manufacturer or authorized distributors?

All W9725G8KB-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9725G8KB-18 meets industry standards.

7.What is the process for return or replacement of W9725G8KB-18?

All W9725G8KB-18 units undergo pre-shipment inspection (PSI). If there is an issue with W9725G8KB-18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9725G8KB-18 part is unused and in its original packaging.

Return procedure for W9725G8KB-18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

W9725G8KB-18 Tags

  • W9725G8KB-18
  • W9725G8KB-18 PDF
  • W9725G8KB-18 Datasheet
  • W9725G8KB-18 Specifications
  • W9725G8KB-18 Images
  • Winbond Electronics Corporation
  • Winbond Electronics Corporation W9725G8KB-18
  • Buy W9725G8KB-18
  • W9725G8KB-18 Price
  • W9725G8KB-18 Distributor
  • W9725G8KB-18 Supplier
  • W9725G8KB-18 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER