Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Winbond Electronics Corporation W9725G8KB-25 TR

Part No.:
W9725G8KB-25 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
60-TFBGA
Datasheet:
AetrixW9725G8KB-25 TR.pdf
Description:
IC DRAM 256MBIT 60-WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,019

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

W9725G8KB-25 TR from Winbond Electronics is a 256Mbit DDR2 SDRAM organized as 8,388,608 words × 4 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V ±0.1 V supply, SSTL_18 interface, and on-die termination (ODT) for high-speed memory subsystems in embedded networking and industrial control applications.

For engineers reviewing the W9725G8KB-25 TR datasheet, W9725G8KB-25 TR pinout, W9725G8KB-25 TR application, or W9725G8KB-25 TR equivalent, this page delivers verified DDR2 timing parameters, ball-level I/O mapping, OCD calibration support, and direct alternatives compatible with DDR2-800 (CL=5/6) operation in space-constrained WBGA packages.

Technical Context

This DDR2 SDRAM implements double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing, programmable additive latency (AL=0–2), and burst lengths of 4 or 8. It supports posted CAS, auto-precharge, and seamless burst interrupt modes for efficient command/data bus utilization.

Functional operation includes on-die termination (ODT) controlled via dedicated ODT pin, off-chip driver (OCD) impedance calibration using EMR(1), and dual-mode data strobes (DQS/DQS or RDQS) configurable via extended mode registers. Power management covers active and precharged power-down, self-refresh (IDD6 ≤ 6 mA), and burst refresh (IDD5B ≤ 80 mA).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 256 Mbit (8,388,608 × 4 banks × 8 bits)
Data Rate DDR2-800: 400 MHz clock → 800 MT/s per pin
CAS Latency Programmable CL = 3, 4, 5, 6, or 7; -25 grade supports CL=5 (tCK min = 2.5 ns) or CL=6 (tCK min = 2.5 ns)
Timing Parameters tRCD/tRP/tRC min = 12.5 ns / 12.5 ns / 57.5 ns at CL=5/6; enables reliable 400 MHz operation with standard DDR2-800 timing budgets
Supply Voltages VDD/VDDQ/VDDL = 1.8 V ±0.1 V; VREF tracks VDDQ/2; supports SSTL_18 I/O standard with noise-immune VSSQ isolation
Power Consumption IDD0 ≤ 65 mA (active), IDD6 ≤ 6 mA (self-refresh), IDD4W ≤ 110 mA (burst write); meets thermal constraints in fanless industrial designs
Interface Standard SSTL_18-compliant inputs/outputs with differential CLK/CLK, bi-directional DQS/DQS, and DM for write masking

Pinout & Package

Packaged in RoHS-compliant, lead-free WBGA-60 (8 mm × 12.5 mm, 0.8 mm pitch). Ball layout optimized for signal integrity: isolated VSSQ planes for DQ I/O, dedicated VDDL/VSSDL for DLL circuitry, and VREF referenced to VDDQ/2.

Pin/Terminal Circuit Role Design Meaning
A0–A12 Address Inputs Row address (A0–A12); column address + auto-precharge bit (A0–A9, A10=AP); A12 supports extended addressing
BA0, BA1 Bank Select Selects one of four internal banks for activate/read/write/precharge; also selects MR/EMR register during MRS/EMRS
DQ0–DQ7 Bidirectional Data Bus 8-bit wide data path; supports burst lengths of 4 or 8; driven/received synchronously with DQS/DQS or RDQS
DQS, DQS Differential Data Strobe Edge-aligned with read data, center-aligned with write data; enabled when EMR(1)[A10]=0; improves timing margin vs single-ended
ODT On-Die Termination Control Registered HIGH enables internal termination resistors (RTT); reduces stub reflections on high-speed DQ/DQS lines without external resistors
CS, RAS, CAS, WE Command Inputs Define all operations (activate, read, write, precharge, refresh); sampled on CLK/CLK crossing; CS enables rank selection
CKE Clock Enable Registered HIGH activates internal clocks; LOW places device in power-down mode; controls entry/exit from low-power states
DM/RDQS Data Mask or Read Strobe DM masks write data when HIGH on DQS edges; RDQS outputs read strobe only when EMR(1)[A11]=1 and differential mode disabled

Key Features

Feature Design Value
Programmable Additive Latency (AL) AL = 0, 1, or 2 enables posted CAS to decouple command issuance from data availability, improving bus efficiency in burst-heavy workloads
Off-Chip Driver (OCD) Calibration EMR(1)-based impedance tuning matches DQ output drive strength to PCB trace impedance, reducing signal distortion without external resistors
On-Die Termination (ODT) Configurable RTT values via EMR(1); eliminates need for external termination resistors on DQ/DQS lines, saving board area and BOM cost
Auto-Precharge Support Integrated precharge after burst read/write commands simplifies controller logic and reduces command overhead in sequential access patterns
Dual Power-Down Modes Active Power Down (CKE low during active bank) and Precharged Power Down (CKE low with all banks idle) enable granular power gating per system state

Applications

Industrial HMI Controllers Network Edge Routers

Use Scenario: Real-time display rendering and local data buffering in panel-mounted HMIs with ARM Cortex-A8/A9 SoCs.

IC Role / Device Role / Timing Role: Primary working memory interfaced to 32-bit DDR2 controller; provides 800 MT/s bandwidth for GUI frame buffers and firmware execution.

Use Value: CL=5/6 timing and 1.8 V operation reduce power and heat in sealed enclosures; ODT and OCD minimize layout sensitivity for compact 4-layer PCBs.

Use Scenario: Packet buffering and forwarding table storage in fanless Layer 3 edge routers with MIPS-based network processors.

IC Role / Device Role / Timing Role: Shared packet buffer memory supporting concurrent ingress/egress traffic; operates at DDR2-800 with burst-8 reads/writes.

Use Value: Self-refresh current ≤6 mA enables low-power standby during traffic lulls; tRC = 57.5 ns ensures deterministic refresh scheduling under load.

Medical Diagnostic Terminals Automated Test Equipment (ATE)

Use Scenario: Image acquisition and preprocessing in portable ultrasound terminals using TI C674x DSPs with DDR2 memory controllers.

IC Role / Device Role / Timing Role: Frame buffer and algorithm scratchpad memory; supports burst-interrupt for real-time ROI updates during scan sequences.

Use Value: Seamless burst interrupt (RL=3, BL=8) allows mid-burst parameter changes without pipeline stalls; DM masking enables partial writes to image buffers.

Use Scenario: Pattern memory and result storage in modular PXI-based ATE systems requiring deterministic memory access latency.

IC Role / Device Role / Timing Role: High-reliability working memory for test pattern generation engines; operates across 0°C–85°C with validated DDR2-800 (5-5-5) timing.

Use Value: WBGA-60 package withstands thermal cycling in production test environments; tRCD/tRP = 12.5 ns guarantees setup/hold margins for 400 MHz controller interfaces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT47H64M4HQ-25E IT:J Micron 256Mb DDR2-800 in FBGA-60; identical density, timing (5-5-5), and 1.8 V supply; supports same CL/BL/AL ranges but uses different EMR encoding for OCD Validated in automotive infotainment reference designs; requires minor MR/EMR reconfiguration for OCD calibration sequence Preferred where AEC-Q200 qualification or Micron's long-term supply program is required; pinout matches W9725G8KB-25 TR but ball function mapping differs slightly for VDDL/VSSDL
IS42S16400F-25BLI ISSI 256Mb DDR2-800 in TSOP-54; same density and DDR2-800 timing, but TSOP package increases board footprint and limits max frequency due to parasitics Used in legacy industrial PLCs with through-hole or large-pitch layouts; lacks WBGA signal integrity features (VSSQ isolation, differential DQS) Selected when cost-sensitive designs prioritize PCB assembly simplicity over high-speed layout optimization; not suitable for new designs targeting >333 MHz sustained operation

Compared with W9725G8KB-25 TR, MT47H64M4HQ-25E IT:J offers equivalent electrical performance in a functionally compatible FBGA package but requires vendor-specific initialization flow, while IS42S16400F-25BLI trades signal integrity and density for lower assembly cost and broader temperature range support in legacy form factors.

Availability

W9725G8KB-25 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical diagnostic terminals, and automated test equipment requiring stable component supply across extended product lifecycles.

Supply support for W9725G8KB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, communications, and consumer applications.

The W9725G8KB series targets cost-sensitive, thermally constrained DDR2 applications requiring proven reliability and long-term supply stability in WBGA packaging-designed specifically for embedded systems where pin count, power, and layout simplicity are critical.

FAQ

What is the maximum supported data rate for W9725G8KB-25 TR?

The W9725G8KB-25 TR is rated for DDR2-800 operation, delivering 800 megatransfers per second per pin. This corresponds to a 400 MHz differential clock input (tCK min = 2.5 ns for CL=5 or CL=6), validated across the full commercial temperature range (0°C to 85°C). The device does not support DDR2-1066 or higher speeds - those require the -18 speed grade variant.

Does W9725G8KB-25 TR support differential DQS operation?

Yes, W9725G8KB-25 TR supports differential DQS/DQS operation when enabled via Extended Mode Register 1 (EMR(1)[A10] = 0). In this mode, balls H3/H8 carry complementary DQS signals, providing improved timing margin over single-ended strobes. When disabled (A10 = 1), ball A2 becomes NU/RDQS and ball A8 serves as single-ended DQS.

How is on-die termination (ODT) configured on W9725G8KB-25 TR?

ODT on W9725G8KB-25 TR is controlled by the dedicated ODT pin (ball F9), which must be registered HIGH to enable internal termination resistors. The specific RTT value (75 Ω, 150 Ω, or off) is set via EMR(1) bits [A1:0]. ODT activation is synchronous with command decoding and applies only during read/write bursts - it does not affect address/control lines.

What is the purpose of the VDDL and VSSDL pins on W9725G8KB-25 TR?

VDDL (ball E1) and VSSDL (ball E7) are dedicated power and ground supplies for the internal delay-locked loop (DLL). Isolating the DLL's analog circuitry from core VDD/VSS and I/O VDDQ/VSSQ minimizes noise coupling, ensuring stable DQ/DQS alignment across voltage and temperature variations - critical for maintaining timing margins at DDR2-800 speeds.

Can W9725G8KB-25 TR operate with CL=3 timing?

No, W9725G8KB-25 TR does not support CAS Latency 3. Per the datasheet's KEY PARAMETERS table, the -25 speed grade specifies minimum tCK values starting at 5 ns for CL=3 - meaning CL=3 operation is only guaranteed for the -3 grade (DDR2-667). Attempting CL=3 with W9725G8KB-25 TR violates timing specifications and may cause data corruption.

W9725G8KB-25 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
60-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR2
Memory Size:
256Mbit
Memory Organization:
32M x 8
Memory Interface:
-
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
57.5 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
60-WBGA (8x12.5)

W9725G8KB-25 TR FAQ

1.How can I place an order for W9725G8KB-25 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9725G8KB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9725G8KB-25 TR reliable?

The price and inventory of W9725G8KB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9725G8KB-25 TR is usually 5 days.

3.What payment methods are accepted for W9725G8KB-25 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9725G8KB-25 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9725G8KB-25 TR?

W9725G8KB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9725G8KB-25 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9725G8KB-25 TR?

For technical support, including W9725G8KB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9725G8KB-25 TR requirements.

6.How does Aetrix verify that W9725G8KB-25 TR is sourced from the original manufacturer or authorized distributors?

All W9725G8KB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9725G8KB-25 TR meets industry standards.

7.What is the process for return or replacement of W9725G8KB-25 TR?

All W9725G8KB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9725G8KB-25 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9725G8KB-25 TR part is unused and in its original packaging.

Return procedure for W9725G8KB-25 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

W9725G8KB-25 TR Tags

  • W9725G8KB-25 TR
  • W9725G8KB-25 TR PDF
  • W9725G8KB-25 TR Datasheet
  • W9725G8KB-25 TR Specifications
  • W9725G8KB-25 TR Images
  • Winbond Electronics Corporation
  • Winbond Electronics Corporation W9725G8KB-25 TR
  • Buy W9725G8KB-25 TR
  • W9725G8KB-25 TR Price
  • W9725G8KB-25 TR Distributor
  • W9725G8KB-25 TR Supplier
  • W9725G8KB-25 TR Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER