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Winbond Electronics Corporation W972GG6JB-18 TR

Name: W972GG6JB-18 TR
Brand: Winbond Electronics Corporation
SKU: W972GG6JB-18 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W972GG6JB-18 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 84-TFBGA

Datasheet:: W972GG6JB-18 TR.pdf

Description:: IC DRAM 2GBIT PAR 84WBGA

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Product details

Overview

W972GG6JB-18 TR from Winbond Electronics is a 2Gb (128M × 16) DDR2 SDRAM organized as 16M words × 8 banks × 16 bits, compliant with DDR2-1066 (7-7-7) timing, operating at 1.8 V ± 0.1 V, and supporting CAS Latency 3–7, burst lengths 4/8, and on-die termination (ODT) for high-speed memory subsystems in embedded networking and industrial control applications.

For engineers reviewing the W972GG6JB-18 TR datasheet, W972GG6JB-18 TR pinout, W972GG6JB-18 TR application, or W972GG6JB-18 TR equivalent, this device requires attention to tRCD = 13.125 ns, tRP = 13.125 ns, tRC = 58.125 ns, ODT configuration via EMR(1), and WBGA-84 ball layout with differential clock (CLK/CLK) and dual DQS strobes (UDQS/LDQS).

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write data capture using edge-aligned (read) and center-aligned (write) DQS strobes. It supports programmable additive latency (AL = 0–2), enabling RL = AL + CL for optimized command bus efficiency.

Functional operation includes auto-precharge, self-refresh, and power-down modes (precharged/active), with OCD impedance calibration for output driver matching and configurable ODT termination on address/control lines. All commands-including bank activate, read, write, precharge all, and refresh-are decoded synchronously on the rising edge of CLK relative to CLK.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (128M × 16), 16M words × 8 banks × 16 bits - defines total addressable storage and bank parallelism for interleaved access.
Data Rate	DDR2-1066 (1066 Mb/s/pin) - enables 533 MHz clock with two transfers per cycle, setting maximum sustained bandwidth.
CAS Latency	CL = 3 to 7 - determines minimum clock cycles between column address and first valid read data; CL=7 required for DDR2-1066 compliance.
tRCD / tRP	13.125 ns min - sets minimum delay from ACTIVE to READ/WRITE and PRECHARGE to ACTIVE, constraining row activation frequency.
VDD / VDDQ	1.8 V ± 0.1 V - mandates tight voltage regulation and decoupling design for stable core and I/O operation.
Interface Standard	SSTL_18 - defines input threshold (VREF = VDDQ/2 ± 300 mV) and output drive strength compatibility with host controller.
Refresh Interval	tREFI = 7.8 μs @ TCASE ≤ 85°C - dictates refresh command scheduling frequency to prevent data retention loss.

Pinout & Package

Packaged in RoHS-compliant, lead-free WBGA-84 (11 mm × 13 mm) with isolated VSSQ/VDDL/VSSDL grounds for noise immunity and dedicated DLL power (VDDL) and reference (VREF) pins.

Pin/Terminal	Circuit Role	Design Meaning
A0–A13	Address Input	Row address (A0–A13) and column address (A0–A9); A10 controls auto-precharge - defines memory mapping and bank access granularity.
BA0–BA2	Bank Select	Selects one of eight internal banks for concurrent row activation - enables bank-level parallelism to hide latency.
DQ0–DQ15	Bidirectional Data Bus	16-bit wide data path; supports burst reads/writes with DM masking - determines interface width and throughput capability.
UDQS / LDQS	Differential Data Strobe (Upper/Lower)	Source-synchronous strobes for DQ8–DQ15 and DQ0–DQ7; edge-aligned on read, center-aligned on write - critical for timing margin in high-speed capture.
CLK / CLK	Differential Clock Input	Sampling clock pair for all address/control inputs; crossing point defines latch edge - establishes synchronous timing reference for all commands.
ODT	On-Die Termination Control	Registered HIGH enables internal termination resistance on address/control lines - reduces signal reflections without external resistors.
VREF	Input Reference Voltage	Reference for SSTL_18 inputs; must track VDDQ/2 ± 300 mV - ensures consistent logic threshold across voltage/temperature.

Key Features

Feature	Design Value
Programmable Additive Latency (AL)	AL = 0–2 enables RL = AL + CL, allowing flexible trade-off between command bus utilization and read latency in burst-heavy workloads.
Off-Chip Driver (OCD) Calibration	EMR(1)-based impedance tuning matches output driver strength to PCB trace impedance, improving signal integrity without external series resistors.
Dual DQS Architecture	Separate UDQS/LDQS strobes for upper/lower byte allow independent timing control and reduced skew in 16-bit interfaces.
Precharged Power Down Mode	Reduces IDD6 to ≤12 mA while retaining row activation state, enabling rapid wake-up with no re-initialization overhead.
Write Latency (WL)	WL = RL − 1 ensures deterministic write-to-read turnaround timing, simplifying controller pipeline design for mixed-access patterns.

Applications

Industrial PLC Memory Buffer	Network Switch Packet Buffer
Use Scenario: Stores real-time I/O status and control logic in programmable logic controllers operating continuously at 85°C ambient. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-M7 or RISC-V MCU with DDR2 controller, handling periodic burst reads/writes under deterministic timing constraints. Use Value: DDR2-1066 bandwidth and tREFI = 7.8 μS support high-frequency polling without refresh-induced latency spikes, while industrial-grade thermal margin ensures reliability over full temperature range.	Use Scenario: Buffers ingress/egress packet data in Layer 2/3 Ethernet switches with multi-gigabit line rates. IC Role / Device Role / Timing Role: Shared packet buffer accessed by multiple traffic managers and MAC controllers, requiring low-latency random access and high sequential throughput. Use Value: 8-bank architecture enables bank interleaving to sustain >80% bus utilization during back-to-back bursts, and ODT eliminates need for external termination on dense switch PCBs.
Medical Imaging Frame Store	Automotive ADAS Preprocessing Buffer
Use Scenario: Captures and temporarily stores uncompressed video frames from ultrasound or endoscopy sensors before compression and transmission. IC Role / Device Role / Timing Role: High-bandwidth frame buffer connected to FPGA-based image processor with native DDR2 PHY, managing large contiguous transfers. Use Value: Burst length 8 and CL=7 deliver peak 1066 Mb/s/pin throughput, while DLL alignment ensures setup/hold margins meet FPGA timing closure requirements at 533 MHz.	Use Scenario: Holds intermediate feature maps and sensor fusion results in vision-based ADAS ECUs operating in extended temperature environments. IC Role / Device Role / Timing Role: Low-power working memory for TI TDA4VM or NXP S32G SoC, supporting burst-intensive CNN inference kernels with strict thermal limits. Use Value: Precharged power down mode cuts standby current to ≤12 mA, and -40°C to 85°C rating meets automotive Grade 3 requirements without derating.

Industrial PLC Memory Buffer

Network Switch Packet Buffer

Use Scenario: Stores real-time I/O status and control logic in programmable logic controllers operating continuously at 85°C ambient.

IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-M7 or RISC-V MCU with DDR2 controller, handling periodic burst reads/writes under deterministic timing constraints.

Use Value: DDR2-1066 bandwidth and tREFI = 7.8 μS support high-frequency polling without refresh-induced latency spikes, while industrial-grade thermal margin ensures reliability over full temperature range.

Use Scenario: Buffers ingress/egress packet data in Layer 2/3 Ethernet switches with multi-gigabit line rates.

IC Role / Device Role / Timing Role: Shared packet buffer accessed by multiple traffic managers and MAC controllers, requiring low-latency random access and high sequential throughput.

Use Value: 8-bank architecture enables bank interleaving to sustain >80% bus utilization during back-to-back bursts, and ODT eliminates need for external termination on dense switch PCBs.

Medical Imaging Frame Store

Automotive ADAS Preprocessing Buffer

Use Scenario: Captures and temporarily stores uncompressed video frames from ultrasound or endoscopy sensors before compression and transmission.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer connected to FPGA-based image processor with native DDR2 PHY, managing large contiguous transfers.

Use Value: Burst length 8 and CL=7 deliver peak 1066 Mb/s/pin throughput, while DLL alignment ensures setup/hold margins meet FPGA timing closure requirements at 533 MHz.

Use Scenario: Holds intermediate feature maps and sensor fusion results in vision-based ADAS ECUs operating in extended temperature environments.

IC Role / Device Role / Timing Role: Low-power working memory for TI TDA4VM or NXP S32G SoC, supporting burst-intensive CNN inference kernels with strict thermal limits.

Use Value: Precharged power down mode cuts standby current to ≤12 mA, and -40°C to 85°C rating meets automotive Grade 3 requirements without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H128M16HR-37E:C	1 Gb density, DDR2-800 (6-6-6), tRCD = 12.5 ns, supports CL=4–6 only - lower bandwidth and capacity than W972GG6JB-18 TR.	Suitable for cost-sensitive designs where 1 Gb suffices and 800 Mb/s/pin is acceptable; lacks DDR2-1066 performance headroom.	Select when system bandwidth demand is ≤6.4 GB/s and board layout favors Micron's 84-ball FBGA footprint.
IS42S16160F-6BLI	2 Gb density, DDR2-667 (5-5-5), tRCD = 15 ns, CL=3–5 only - slower speed grade with longer latency and reduced max frequency.	Fits legacy systems constrained to DDR2-667 timing; compatible with older controllers lacking DDR2-1066 support.	Choose for drop-in replacement in existing DDR2-667 designs requiring same density but not higher speed.

Compared with MT47H128M16HR-37E:C and IS42S16160F-6BLI, the W972GG6JB-18 TR delivers highest bandwidth (1066 Mb/s/pin), lowest tRCD/tRP (13.125 ns), and widest CL range (3–7), making it optimal for new designs targeting DDR2-1066 performance while maintaining pin compatibility within the 84-ball WBGA DDR2 family.

Availability

W972GG6JB-18 TR is available at Aetrix Electronics and suitable for industrial PLC memory buffers, network switch packet buffers, medical imaging frame stores, and automotive ADAS preprocessing buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W972GG6JB-18 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W972GG6JB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for high-reliability embedded systems requiring JEDEC-compliant DDR2-667/800/1066 operation with robust thermal and signal integrity performance.

FAQ

What is the maximum clock frequency supported by the W972GG6JB-18 TR?

The W972GG6JB-18 TR supports a maximum clock frequency of 533 MHz, corresponding to DDR2-1066 operation (1066 Mb/s/pin). This is validated by its -18 speed grade binning, which guarantees tCK(avg) ≤ 1.875 ns at CL=7 and full compliance with JEDEC DDR2-1066 (7-7-7) timing parameters including tRCD = 13.125 ns and tRP = 13.125 ns. The W972GG6JB-18 TR achieves this using DLL-aligned DQ/DQS timing and SSTL_18 I/O signaling.

Does the W972GG6JB-18 TR require external termination resistors?

No, the W972GG6JB-18 TR integrates on-die termination (ODT) controlled via the ODT pin and extended mode registers, eliminating the need for external parallel termination on address, command, and control lines. It also supports OCD calibration to match output driver impedance to PCB trace characteristics, further reducing reliance on external series resistors for DQ/DQS signals. This simplifies PCB layout and improves signal integrity in high-density designs.

How does the W972GG6JB-18 TR handle refresh in high-temperature environments?

The W972GG6JB-18 TR supports extended-temperature refresh by halving tREFI to 3.9 μs when case temperature exceeds 85°C, achieved by doubling the Auto Refresh command rate to a 32 ms interval. This is enabled via EMR(2) bit A7 = "1", ensuring data retention integrity up to 95°C. The W972GG6JB-18 TR maintains full JEDEC AC/DC specifications across 0°C to 85°C, with the -18 grade rated for that range.

What is the function of the A10 pin during Read/Write commands on the W972GG6JB-18 TR?

On the W972GG6JB-18 TR, the A10 pin serves as the Auto-precharge bit during Read and Write commands: when A10 = HIGH, the memory automatically issues a PRECHARGE command to the accessed bank at burst completion. This eliminates the need for explicit PRECHARGE commands in sequential accesses, improving bus efficiency. A10 is not used as an address bit in this context and is distinct from its role in mode register programming.

Can the W972GG6JB-18 TR operate with single-ended DQS instead of differential DQS?

Yes, the W972GG6JB-18 TR supports both differential (UDQS/UDQS, LDQS/LDQS) and single-ended DQS operation. Differential mode is enabled via EMR(1) bit A10; when disabled, UDQS and LDQS function as single-ended strobes. In single-ended mode, timing margins are reduced compared to differential operation, and the W972GG6JB-18 TR still maintains full DDR2-1066 compliance provided setup/hold requirements are met at the controller interface.

W972GG6JB-18 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 84-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: Parallel

Clock Frequency:: 533 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 58.125 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 84-WBGA (11x13)

W972GG6JB-18 TR FAQ

1.How can I place an order for W972GG6JB-18 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG6JB-18 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG6JB-18 TR reliable?

The price and inventory of W972GG6JB-18 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG6JB-18 TR is usually 5 days.

3.What payment methods are accepted for W972GG6JB-18 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG6JB-18 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W972GG6JB-18 TR?

W972GG6JB-18 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG6JB-18 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG6JB-18 TR?

For technical support, including W972GG6JB-18 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG6JB-18 TR requirements.

6.How does Aetrix verify that W972GG6JB-18 TR is sourced from the original manufacturer or authorized distributors?

All W972GG6JB-18 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG6JB-18 TR meets industry standards.

7.What is the process for return or replacement of W972GG6JB-18 TR?

All W972GG6JB-18 TR units undergo pre-shipment inspection (PSI). If there is an issue with W972GG6JB-18 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG6JB-18 TR part is unused and in its original packaging.

Return procedure for W972GG6JB-18 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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