Winbond Electronics Corporation W972GG6JB-25

Overview

W972GG6JB-25 from Winbond is a 2Gb (128M × 16) DDR2 SDRAM organized as 16M words × 8 banks × 16 bits, compliant with DDR2-800 (5-5-5 or 6-6-6) timing, operating at 1.8 V ± 0.1 V supply, and supporting CAS latencies of 3–7 for use in embedded computing, industrial controllers, and legacy communication baseband modules.

For engineers reviewing the W972GG6JB-25 datasheet, W972GG6JB-25 pinout, W972GG6JB-25 application, or W972GG6JB-25 equivalent, key selection considerations include its -25 speed grade timing (tRCD/tRP = 12.5 ns), on-die termination (ODT), OCD impedance calibration, differential clock interface (CLK/CLK), and WBGA-84 package compatibility with JEDEC DDR2-800 systems.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing, source-synchronous read/write strobes (UDQS/LDQS), and programmable additive latency (AL) enabling RL = AL + CL. It supports burst lengths of 4 and 8, posted CAS, and auto-precharge for both read and write operations.

Functional control includes mode register (MR) and extended mode registers (EMR1–EMR3) for configuring ODT states, OCD calibration, DLL enable/disable, and drive mode selection. The device features dual power domains (VDD/VDDQ), isolated DQ ground (VSSQ), and dedicated DLL supply (VDDL/VSSDL) to minimize noise coupling in high-speed memory interfaces.

Key Specifications

Pinout & Package

W972GG6JB-25 uses an 84-ball Wafer-Level Ball Grid Array (WBGA) package with 0.8 mm ball pitch, 11 mm × 13 mm body size, RoHS-compliant lead-free construction, and segregated power/ground domains (VDD/VSS, VDDQ/VSSQ, VDDL/VSSDL) for signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with W972GG6JB-25, MT47H128M16HR-25E offers identical electrical timing but divergent register initialization sequences, while IS43TR16128B-25BLI extends thermal capability at no layout cost-making it suitable for harsher deployments where Winbond's 85°C limit is insufficient.

Availability

W972GG6JB-25 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy telecom baseband units, medical imaging subsystems, and automotive infotainment head units requiring stable component supply across extended product lifecycles.

Supply support for W972GG6JB-25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W972GG6JB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-sensitive, long-lifecycle embedded systems requiring JEDEC-compliant DDR2-667/800/1066 performance with robust thermal and signal integrity specifications.

FAQ

What is the maximum operating frequency supported by the W972GG6JB-25?

The W972GG6JB-25 supports DDR2-800 operation, meaning it runs at a 400 MHz clock frequency with data transferred on both rising and falling edges for an effective rate of 800 MT/s. Its tCK(min) is 2.5 ns at CL=5 or CL=6, and 5 ns at CL=3, fully compliant with JEDEC DDR2-800 (5-5-5) and (6-6-6) timing specifications.

Does the W972GG6JB-25 require external termination resistors?

No, the W972GG6JB-25 integrates On-Die Termination (ODT) on DQ and DQS lines, eliminating the need for external parallel termination resistors. ODT resistance values (75 Ω, 150 Ω, etc.) are configured via EMR(1), and activation is controlled by the ODT pin state during read/write operations.

How is the W972GG6JB-25 initialized after power-up?

The W972GG6JB-25 requires a precise 13-step initialization sequence: stable power ramp, 200 µs clock stabilization, CKE assertion, PRECHARGE ALL, EMRS to EMR(2)/EMR(3), DLL enable/reset, MRS programming, OCD calibration, and two or more AUTO REFRESH commands before normal operation begins.

Can the W972GG6JB-25 operate in industrial temperature ranges?

The W972GG6JB-25 is rated for 0°C ≤ TCASE ≤ 85°C. For industrial temperature support (-40°C to 95°C), Winbond offers the W972GG6JB-25I variant; the standard -25 grade does not guarantee functionality or AC timing compliance outside its specified range.

What package type and ball count does the W972GG6JB-25 use?

The W972GG6JB-25 uses a RoHS-compliant, lead-free Wafer-Level Ball Grid Array (WBGA) package with 84 solder balls arranged in an 11 mm × 13 mm body size and 0.8 mm pitch. Pinout matches JEDEC-standard DDR2 SDRAM layouts for WBGA-84.