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Winbond Electronics Corporation W972GG6JB-25 TR

Name: W972GG6JB-25 TR
Brand: Winbond Electronics Corporation
SKU: W972GG6JB-25 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W972GG6JB-25 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 84-TFBGA

Datasheet:: W972GG6JB-25 TR.pdf

Description:: IC DRAM 2GBIT PARALLEL 84WBGA

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Product details

Overview

W972GG6JB-25 TR from Winbond is a 2Gb (128M × 16) DDR2 SDRAM organized as 16M words × 8 banks × 16 bits, compliant with DDR2-800 (5-5-5 or 6-6-6) timing, operating at 1.8 V ± 0.1 V, and packaged in an 84-ball WBGA (11 × 13 mm²) for embedded memory subsystems in industrial control and networking equipment.

For engineers reviewing the W972GG6JB-25 TR datasheet, W972GG6JB-25 TR pinout, W972GG6JB-25 TR application, or W972GG6JB-25 TR equivalent, this page delivers verified DDR2 timing parameters, ball function mapping, OCD/ODT configuration support, and JEDEC-compliant initialization sequence details required for reliable memory interface design and layout validation.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing, programmable CAS latency (CL = 3–7), additive latency (AL = 0–2), and write latency WL = RL − 1. It supports burst lengths of 4 and 8, bi-directional differential DQS strobes (UDQS/LDQS), and source-synchronous read/write data capture.

Functional operation includes on-die termination (ODT) controlled via dedicated ODT pin, off-chip driver (OCD) impedance calibration using EMR(1), auto-precharge, self-refresh, and precharged power-down modes. All commands are sampled on the rising edge of CLK relative to CLK, and address/control inputs are registered synchronously.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (128M × 16), 16M words × 8 banks × 16 bits - defines usable capacity and bank-level parallelism for interleaved access.
Data Rate	DDR2-800 (400 MHz clock, 800 MT/s per pin) - sets maximum sustained bandwidth and timing budget constraints.
CAS Latency	Programmable CL = 3, 4, 5, 6, or 7 - directly impacts read access latency and must match controller capability.
Supply Voltage	VDD = VDDQ = VDDL = 1.8 V ± 0.1 V - mandates tight regulation and separate DQ/VDD routing for signal integrity.
Burst Length	BL = 4 or 8 - determines minimum transaction size and affects bus efficiency and prefetch utilization.
tRCD / tRP / tRC	12.5 ns / 12.5 ns / 57.5 ns (min) at DDR2-800 - defines critical row activation, precharge, and cycle timing margins.
Interface Standard	SSTL_18 - requires compatible driver/receiver termination and voltage reference (VREF = VDDQ/2).
Operating Temp	0°C ≤ TCASE ≤ 85°C - specifies thermal envelope for industrial-grade reliability without derating.

Pinout & Package

Packaged in 84-ball WBGA (11 × 13 mm²), RoHS-compliant, lead-free. Ball pitch: 0.8 mm. VSSQ and VSS pins provide isolated DQ ground and system ground for noise separation.

Pin/Terminal	Circuit Role	Design Meaning
A0–A13	Address Input	Row/column address bus; A10 controls auto-precharge during read/write commands.
BA0–BA2	Bank Select	3-bit field selecting one of eight internal banks for concurrent row activation.
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; requires matched trace length and SSTL_18 termination.
UDQS / LDQS	Differential Data Strobe	Upper/lower byte strobes; edge-aligned on read, center-aligned on write; enabled via EMR(1).
UDM / LDM	Data Mask Input	Byte-level write masking sampled on both DQS edges; enables partial-word writes without read-modify-write.
CLK / CLK	Differential Clock Input	Primary timing reference; all commands latched at crossing point; dictates maximum stable frequency.
CKE	Clock Enable	Asynchronous enable/disable of internal clock circuitry; controls power-down entry/exit timing.
CS / RAS / CAS / WE	Command Inputs	Encoded command bus; CS enables rank selection; RAS/CAS/WE define active, read, write, precharge, refresh.
ODT	On-Die Termination Control	Active-HIGH pin enabling internal termination resistors on DQ/DQS lines to reduce stub reflections.
VREF	Input Reference Voltage	Stabilized at VDDQ/2 ± 30 mV; critical for SSTL_18 input threshold accuracy and noise margin.

Key Features

Feature	Design Value
Programmable Additive Latency (AL)	AL = 0, 1, or 2 enables posted-CAS mode, decoupling command issuance from data availability to improve command bus utilization.
Off-Chip Driver (OCD) Calibration	EMR(1)-based impedance tuning matches external trace impedance, reducing output overshoot/undershoot and improving signal fidelity.
On-Die Termination (ODT)	Pin-controlled dynamic termination eliminates need for external resistors on DQ/DQS lines, simplifying PCB layout and reducing BOM count.
Auto-Precharge	Automatic bank precharge after burst read/write eliminates explicit PRE command overhead, reducing command bus contention and latency.
Self-Refresh Mode	Autonomous refresh during CKE-low state maintains data retention with IDD6 ≤ 12 mA, enabling low-power suspend states in portable systems.
Differential DQS Architecture	UDQS/LDQS pairs support source-synchronous timing with precise edge/center alignment, enabling robust 800 MT/s operation across temperature.

Applications

Industrial PLC Memory Buffer	Network Switch Packet Buffer
Use Scenario: Real-time I/O scanning and logic execution in programmable logic controllers requiring deterministic memory access under temperature variation. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and process data storage, interfaced to ARM Cortex-M7 or RISC-V SoC with DDR2 controller. Use Value: DDR2-800 bandwidth supports >600 MB/s sustained throughput; ODT and OCD ensure signal integrity across extended industrial temperature range (0°C–85°C).	Use Scenario: Temporary storage of Ethernet frames in Layer 2/L3 switching ASICs handling 1 Gbps+ line rates with minimal latency jitter. IC Role / Device Role / Timing Role: Shared packet buffer for ingress/egress queues, managed by switch fabric controller with burst-length-8 optimized access patterns. Use Value: BL=8 and auto-precharge minimize command overhead; tRCD/tRP = 12.5 ns enables sub-30 ns row activation, supporting <1 µs average packet latency.
Medical Imaging Display Controller	Video Surveillance DVR Frame Buffer
Use Scenario: High-resolution medical display subsystem rendering DICOM images with strict frame consistency and zero data corruption tolerance. IC Role / Device Role / Timing Role: Frame buffer memory for FPGA-based video pipeline, synchronized to pixel clock via DDR2 controller with DLL-locked DQS. Use Value: DLL alignment and SSTL_18 interface guarantee setup/hold compliance at 400 MHz; self-refresh preserves image data during display blanking intervals.	Use Scenario: Multi-channel HD video recording where simultaneous encode/decode operations demand high-bandwidth, low-latency memory access. IC Role / Device Role / Timing Role: Shared frame buffer for H.264/H.265 encoder and decoder engines, accessed via dual-port DDR2 controller with bank interleaving. Use Value: 8-bank architecture enables concurrent row activation; IDD7 = 250 mA peak supports sustained 2× HD stream buffering without thermal throttling.

Industrial PLC Memory Buffer

Network Switch Packet Buffer

Use Scenario: Real-time I/O scanning and logic execution in programmable logic controllers requiring deterministic memory access under temperature variation.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and process data storage, interfaced to ARM Cortex-M7 or RISC-V SoC with DDR2 controller.

Use Value: DDR2-800 bandwidth supports >600 MB/s sustained throughput; ODT and OCD ensure signal integrity across extended industrial temperature range (0°C–85°C).

Use Scenario: Temporary storage of Ethernet frames in Layer 2/L3 switching ASICs handling 1 Gbps+ line rates with minimal latency jitter.

IC Role / Device Role / Timing Role: Shared packet buffer for ingress/egress queues, managed by switch fabric controller with burst-length-8 optimized access patterns.

Use Value: BL=8 and auto-precharge minimize command overhead; tRCD/tRP = 12.5 ns enables sub-30 ns row activation, supporting <1 µs average packet latency.

Medical Imaging Display Controller

Video Surveillance DVR Frame Buffer

Use Scenario: High-resolution medical display subsystem rendering DICOM images with strict frame consistency and zero data corruption tolerance.

IC Role / Device Role / Timing Role: Frame buffer memory for FPGA-based video pipeline, synchronized to pixel clock via DDR2 controller with DLL-locked DQS.

Use Value: DLL alignment and SSTL_18 interface guarantee setup/hold compliance at 400 MHz; self-refresh preserves image data during display blanking intervals.

Use Scenario: Multi-channel HD video recording where simultaneous encode/decode operations demand high-bandwidth, low-latency memory access.

IC Role / Device Role / Timing Role: Shared frame buffer for H.264/H.265 encoder and decoder engines, accessed via dual-port DDR2 controller with bank interleaving.

Use Value: 8-bank architecture enables concurrent row activation; IDD7 = 250 mA peak supports sustained 2× HD stream buffering without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H128M16HR-25E	Same density, speed grade, and 84-ball FBGA package; JEDEC-compliant DDR2-800 but uses different OCD/ODT register map.	Requires modified initialization sequence and MR/EMR programming; not drop-in compatible due to vendor-specific EMR bit definitions.	Valid alternative if controller firmware supports Micron's register layout and timing tolerances.
IS42S16160F-25BLI	Identical 2Gb × 16 organization and -25 speed grade; same WBGA84 footprint but different ball assignment for UDQS/LDQS and ODT.	Pinout mismatch on strobe and termination pins necessitates PCB redesign; VREF sourcing differs per datasheet.	Only suitable for new designs with full layout flexibility; not recommended for drop-in replacement.

Compared with W972GG6JB-25 TR, MT47H128M16HR-25E offers identical electrical performance but requires firmware adaptation for register initialization, while IS42S16160F-25BLI demands physical board changes due to incompatible ball mapping-making W972GG6JB-25 TR preferable for Winbond-optimized platforms.

Availability

W972GG6JB-25 TR is available at Aetrix Electronics and suitable for industrial PLCs, network switches, medical imaging displays, and video surveillance DVRs requiring stable component supply, long-term lifecycle support, and guaranteed JEDEC-compliant DDR2-800 operation.

Supply support for W972GG6JB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design expertise and ISO 9001/TS 16949 certified manufacturing.

The W972GG6JB series targets cost-sensitive, thermally demanding industrial and networking applications where DDR2's balance of bandwidth, power, and maturity outperforms legacy SDR and newer DDR3 in legacy controller ecosystems.

FAQ

What is the maximum supported CAS latency for W972GG6JB-25 TR?

W972GG6JB-25 TR supports programmable CAS latency values of CL = 3, 4, 5, 6, or 7. At DDR2-800 speed grade (-25), CL = 5 or 6 is typically used to meet tRCD ≥ 12.5 ns and tRP ≥ 12.5 ns requirements while maintaining timing margin. CL = 7 is valid but increases read access latency without performance benefit at this speed grade.

Does W972GG6JB-25 TR require external termination resistors?

No. W972GG6JB-25 TR integrates on-die termination (ODT) controlled by the dedicated ODT pin. When asserted HIGH, it enables internal termination resistors on DQ and DQS lines, eliminating the need for external parallel resistors and simplifying PCB layout. External termination is only required if ODT is disabled and system topology demands it.

How is OCD calibration performed for W972GG6JB-25 TR?

OCD calibration for W972GG6JB-25 TR is executed via Extended Mode Register Set (EMRS) commands to EMR(1). The process requires issuing specific A7–A9 bit patterns (e.g., A9=A8=A7=HIGH to enter calibration mode, then LOW to exit) after DLL enable and MRS initialization. Calibration adjusts output driver impedance to match trace Z₀, and must be repeated if VDDQ or temperature changes significantly.

What is the purpose of the A10/AP pin on W972GG6JB-25 TR?

The A10 pin on W972GG6JB-25 TR serves dual function: as address bit A10 during normal addressing, and as Auto-Precharge (AP) control during READ/WRITE commands. When A10 is HIGH during a read or write command, the device automatically issues a precharge to the accessed bank at burst completion-eliminating the need for a separate PRE command and reducing command bus load.

Can W972GG6JB-25 TR operate at industrial temperature range?

No. W972GG6JB-25 TR is rated for 0°C ≤ TCASE ≤ 85°C only. For industrial temperature support (−40°C to +95°C), the W972GG6JB-25I variant must be used. The -25I part shares identical electrical specifications and pinout but guarantees full JEDEC AC/DC performance across the extended range, including doubled refresh rate at high temperature.

W972GG6JB-25 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 84-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: Parallel

Clock Frequency:: 200 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 57.5 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 84-WBGA (11x13)

W972GG6JB-25 TR FAQ

1.How can I place an order for W972GG6JB-25 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG6JB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG6JB-25 TR reliable?

The price and inventory of W972GG6JB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG6JB-25 TR is usually 5 days.

3.What payment methods are accepted for W972GG6JB-25 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG6JB-25 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W972GG6JB-25 TR?

W972GG6JB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG6JB-25 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG6JB-25 TR?

For technical support, including W972GG6JB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG6JB-25 TR requirements.

6.How does Aetrix verify that W972GG6JB-25 TR is sourced from the original manufacturer or authorized distributors?

All W972GG6JB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG6JB-25 TR meets industry standards.

7.What is the process for return or replacement of W972GG6JB-25 TR?

All W972GG6JB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W972GG6JB-25 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG6JB-25 TR part is unused and in its original packaging.

Return procedure for W972GG6JB-25 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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