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Winbond Electronics Corporation W972GG6JB-3

Part No.:
W972GG6JB-3
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
84-TFBGA
Datasheet:
AetrixW972GG6JB-3.pdf
Description:
IC DRAM 2GBIT PARALLEL 84WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,458

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Product details

Overview

W972GG6JB-3 from Winbond Electronics is a 2Gb (128M × 16) DDR2 SDRAM organized as 16M words × 8 banks × 16 bits, compliant with JEDEC DDR2-667 (5-5-5) timing, operating at 1.8 V ± 0.1 V supply, and supporting CAS Latency 3–7, burst lengths 4/8, and on-die termination (ODT) for high-speed memory subsystems in embedded networking and industrial control.

For engineers reviewing the W972GG6JB-3 datasheet, W972GG6JB-3 pinout, W972GG6JB-3 application, or W972GG6JB-3 equivalent, this device requires attention to tRCD = 15 ns, tRP = 15 ns, tRC = 60 ns, ODT configuration via EMR(1), and differential clock (CLK/CLK) synchronization - all critical for stable DDR2 interface timing validation and signal integrity planning.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous data strobes (UDQS/LDQS). It supports programmable additive latency (AL = 0–2), posted CAS, and auto-precharge for efficient command pipelining.

Functional operation relies on three extended mode registers (EMR1–EMR3) for configuring OCD impedance, ODT enable/disable, DLL control, and thermal refresh extension (A7=1 in EMR2 for 95°C support), alongside standard mode register (MR) settings for CL, BL, and WR. All commands are sampled on the rising edge of CLK relative to CLK.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density2 Gb (128M × 16), 8-bank architecture enabling concurrent bank access for interleaved burst efficiency
Data RateDDR2-667: 333 MHz clock → 667 MT/s per pin, requiring tCK(min) = 3.0 ns at CL=5
CAS LatencyProgrammable CL = 3, 4, 5, 6, or 7; determines minimum read-to-data-valid delay in clock cycles
Burst LengthFixed BL = 4 or 8; defines number of data transfers per READ/WRITE command
tRCD / tRP15 ns minimum; dictates minimum delay between ACTIVE→READ/WRITE and PRECHARGE→ACTIVE commands
VDD / VDDQ1.8 V ± 0.1 V; strict supply tolerance mandates low-noise regulation and tight board-level decoupling
Interface StandardSSTL_18-compliant I/Os with differential clock inputs and bi-directional DQS strobes for source-synchronous timing
Refresh IntervaltREFI = 7.8 μs at 0–85°C; requires precise periodic refresh scheduling to prevent data retention loss

Pinout & Package

Packaged in 84-ball WBGA (11 mm × 13 mm, 0.8 mm pitch), lead-free and RoHS-compliant, with separate VDD/VDDQ and VSS/VSSQ power/ground domains for noise isolation.

Pin/Terminal Circuit Role Design Meaning
A0–A13Address InputsRow address (A0–A13) and column address (A0–A9); A10 controls auto-precharge
BA0–BA2Bank SelectSelects one of eight internal banks for ACTIVE/READ/WRITE/PRECHARGE commands
DQ0–DQ15Data I/O16-bit bidirectional data bus; DQ0–DQ7 tied to LDQS, DQ8–DQ15 tied to UDQS
UDQS / LDQSDifferential Data StrobeSource-synchronous strobes: edge-aligned on reads, center-aligned on writes; enabled via EMR(1)
CLK / CLKDifferential Clock InputCommands latched at CLK/CLK crossing; all timing referenced to this differential pair
CKEClock EnableAsynchronous enable/disable of internal clock circuitry; LOW forces power-down states
CS, RAS, CAS, WECommand ControlEncoded command bus; CS enables rank selection, RAS/CAS/WE define command type
ODTOn-Die Termination ControlRegistered HIGH enables internal termination resistors (75 Ω or 150 Ω) to reduce stub reflections
VREFInput Reference VoltageReference for SSTL_18 input thresholds; must track VDDQ/2 ± 30 mV for valid logic sampling

Key Features

Feature Design Value
On-Die Termination (ODT)Configurable 75 Ω or 150 Ω termination on DQ/DQS lines reduces PCB routing complexity and improves signal integrity without external resistors
Off-Chip Driver (OCD) CalibrationDynamic impedance tuning of output drivers via EMR(1) ensures consistent drive strength across voltage/temperature variations
Programmable Additive Latency (AL)AL = 0–2 allows posting of CAS after command, increasing command bus utilization while maintaining tRCD compliance
Self Refresh ModeIDD6 ≤ 12 mA at TCASE ≤ 85°C enables low-power retention during system sleep without external refresh controller intervention
Differential Clock InterfaceCLK/CLK differential pair rejects common-mode noise and enables robust timing margin at 333 MHz clock frequency
Write Data Mask (DM)LDM/UDM pins allow per-byte masking of write data on DQ0–DQ7 and DQ8–DQ15, eliminating unnecessary read-modify-write cycles

Applications

Industrial PLC Memory Buffer Network Router Packet Buffer

Use Scenario: Real-time deterministic I/O scanning in programmable logic controllers with multi-cycle interrupt response requirements.

IC Role / Device Role / Timing Role: Primary working memory for ladder logic execution engine, buffering sensor/actuator data with guaranteed tRC = 60 ns bank cycle timing.

Use Value: DDR2-667 speed and 8-bank interleaving sustain >500 MB/s sustained bandwidth under burst-heavy workloads while meeting industrial temperature range (0–85°C).

Use Scenario: High-throughput packet buffering in Layer 3 enterprise routers handling 10 Gbps line-rate traffic with deep queueing.

IC Role / Device Role / Timing Role: Shared packet buffer memory accessed by multiple ASIC DMA engines, relying on ODT and OCD calibration for clean signal integrity at 667 MT/s.

Use Value: On-die termination eliminates need for point-of-load termination resistors, reducing BOM count and PCB area in dense switch fabric designs.

Medical Imaging Frame Store Automotive ADAS Preprocessing Buffer

Use Scenario: Temporary storage of uncompressed ultrasound or MRI frame data prior to compression and transmission.

IC Role / Device Role / Timing Role: Low-latency, high-bandwidth frame buffer interfaced to FPGA-based image processors using source-synchronous DQS strobes.

Use Value: Programmable CL and AL allow tuning for optimal read latency vs. command efficiency trade-off in real-time imaging pipelines.

Use Scenario: Intermediate buffer for radar point cloud preprocessing in automotive domain controllers operating near engine bays.

IC Role / Device Role / Timing Role: Memory subsystem for vision/radar fusion algorithms requiring reliable operation up to 85°C ambient with minimal refresh overhead.

Use Value: Self-refresh current ≤12 mA enables safe memory retention during brief MCU sleep states without compromising thermal budget.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT47H128M16HR-3E IT:JSame density (2Gb), same DDR2-667 speed grade, but uses 84-ball FBGA (11×13 mm) with identical ball map and SSTL_18 I/ODesigned for telecom infrastructure; validated for extended temperature cycling and higher reliability screeningDrop-in replacement if JEDEC-compliant layout and thermal profile match; verify ODT default state and EMR initialization sequence
IS42S16160F-3BL2Gb DDR2-667 in 84-ball FBGA, but lacks differential DQS support (single-ended only) and has fixed CL=5 (no programmable AL)Targeted at cost-sensitive consumer electronics; no industrial temp grade (-3I) option availableRequires PCB redesign for DQS routing and firmware update to remove AL-dependent timing calculations

Compared with MT47H128M16HR-3E IT:J, W972GG6JB-3 offers identical timing and pinout but lower qualification cost; versus IS42S16160F-3BL, it delivers superior signal integrity via differential strobes and greater timing flexibility through programmable AL and ODT control.

Availability

W972GG6JB-3 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR2-667 performance.

Supply support for W972GG6JB-3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W972GG6JB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for applications demanding reliable operation across extended temperature ranges and compatibility with legacy DDR2 controller IP.

FAQ

What is the maximum operating frequency supported by W972GG6JB-3?

W972GG6JB-3 supports DDR2-667 operation at 333 MHz clock frequency, delivering 667 MT/s data transfer rate per pin. Its tCK(min) is 3.0 ns at CAS Latency 5, and it maintains full JEDEC AC/DC specifications across 0°C to 85°C case temperature. The device does not support DDR2-800 or DDR2-1066 speeds - those require -25 or -18 speed grades.

Does W972GG6JB-3 support differential DQS operation?

Yes, W972GG6JB-3 supports differential DQS operation via UDQS/UDQS and LDQS/LDQS pins, but only when enabled through Extended Mode Register 1 (EMR1) using the A10 bit. When disabled, it operates in single-ended DQS mode. The differential mode improves timing margin and noise immunity for high-speed write capture and read capture alignment.

How is On-Die Termination (ODT) configured on W972GG6JB-3?

ODT on W972GG6JB-3 is controlled by the ODT pin (ball K9) and configured via EMR1. When ODT is asserted HIGH, internal termination resistors (75 Ω or 150 Ω) are enabled on DQ and DQS lines. The resistance value is set by EMR1[1:0], and termination is active only during READ/WRITE operations - not during idle or precharge states.

What is the required power-up initialization sequence for W972GG6JB-3?

W972GG6JB-3 requires a strict 13-step JEDEC-compliant power-up sequence: stable VDD/VDDQ/VDDL ramp (<200 ms), 200 µs stable clock, CKE assertion, PRECHARGE ALL, EMRS to EMR2/EMR3, DLL enable/reset, MRS, OCD calibration (or default), and ≥2 Auto Refresh commands before normal operation. Skipping any step risks undefined behavior or initialization failure.

Can W972GG6JB-3 operate at 95°C case temperature?

No - the W972GG6JB-3 speed grade is rated for 0°C ≤ TCASE ≤ 85°C only. For operation up to 95°C, the industrial-grade variant W972GG6JB-3I must be used; it supports extended temperature via doubled refresh rate (tREFI = 3.9 µs) and EMR2[A7]=1 activation, which W972GG6JB-3 does not guarantee.

W972GG6JB-3 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
84-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR2
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
60 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
84-WBGA (11x13)

W972GG6JB-3 FAQ

1.How can I place an order for W972GG6JB-3 through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG6JB-3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG6JB-3 reliable?

The price and inventory of W972GG6JB-3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG6JB-3 is usually 5 days.

3.What payment methods are accepted for W972GG6JB-3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG6JB-3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W972GG6JB-3?

W972GG6JB-3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG6JB-3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG6JB-3?

For technical support, including W972GG6JB-3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG6JB-3 requirements.

6.How does Aetrix verify that W972GG6JB-3 is sourced from the original manufacturer or authorized distributors?

All W972GG6JB-3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG6JB-3 meets industry standards.

7.What is the process for return or replacement of W972GG6JB-3?

All W972GG6JB-3 units undergo pre-shipment inspection (PSI). If there is an issue with W972GG6JB-3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG6JB-3 part is unused and in its original packaging.

Return procedure for W972GG6JB-3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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