My Inquiry
My Account
Winbond Electronics Corporation W972GG6JB-3 TR
.jpg){kind=spacer}
- Part No.:
- W972GG6JB-3 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W972GG6JB-3 TR.pdf
- Description:
- IC DRAM 2GBIT PARALLEL 84WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,277
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W972GG6JB-3 TR from Winbond Electronics is a 2 Gb (128 M × 16) DDR2 SDRAM organized as 16M words × 8 banks × 16 bits, operating at DDR2-667 speed (5-5-5 timing), with 1.8 V VDD/VDDQ supply, SSTL_18 interface, and support for CAS latencies 3–7 in industrial-grade temperature range (0°C to 85°C). It serves as main memory or frame buffer in embedded networking and industrial control systems requiring JEDEC-compliant synchronous DRAM with on-die termination and OCD calibration.
For engineers reviewing the W972GG6JB-3 TR datasheet, W972GG6JB-3 TR pinout, W972GG6JB-3 TR application, or W972GG6JB-3 TR equivalent, key selection criteria include tRCD = 15 ns, tRP = 15 ns, tRC = 60 ns, IDD4R ≤ 155 mA burst read current, and WBGA-84 (11×13 mm²) package compatibility with DDR2 controller timing margins and signal integrity requirements.
Technical Context
This DDR2 SDRAM implements double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing, bi-directional differential DQS strobes (UDQS/LDQS), and source-synchronous data capture. It supports programmable additive latency (AL = 0–2), posted CAS, auto-precharge, and both self-refresh and auto-refresh modes.
Functional operation relies on mode register (MR) and extended mode registers (EMR1–EMR3) for configuring burst length (4/8), burst type (sequential/interleaved), ODT impedance states, OCD drive strength, DLL enable/disable, and write recovery (WL = RL − 1). Initialization requires strict power-up sequence including EMRS commands to EMR(2), EMR(3), and DLL enable before MRS programming.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (128 M × 16), enabling 256 MB of 16-bit wide system memory per device |
| Data Rate | DDR2-667 (333 MHz clock, 667 MT/s), defining maximum sustained bandwidth of 1.07 GB/s |
| CAS Latency | CL = 5 (tCK = 3 ns min), setting minimum read access delay from command to first valid DQ output |
| tRCD / tRP | 15 ns each, constraining minimum time between ACTIVATE and READ/WRITE, and PRECHARGE timing margins |
| VDD / VDDQ | 1.8 V ± 0.1 V, requiring tightly regulated dual-rail power delivery with matched ramp rates |
| Interface Standard | SSTL_18, mandating compatible driver/receiver voltage thresholds and termination schemes |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C, qualifying for commercial/industrial ambient without derating |
| Burst Length | Programmable 4 or 8, determining contiguous data transfer size per read/write command |
Pinout & Package
W972GG6JB-3 TR uses an 84-ball WBGA package (11 mm × 13 mm, 0.8 mm pitch) with lead-free, RoHS-compliant construction. Ball layout separates VDDQ/VSSQ domains for DQ noise isolation and includes dedicated DLL power (VDDL) and ground (VSSDL) pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bus; A10 controls auto-precharge on read/write commands |
| BA0–BA2 | Bank Select | 3-bit field selecting one of eight internal memory banks for concurrent access |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus with source-synchronous timing referenced to DQS pairs |
| UDQS / LDQS | Differential Data Strobe | Upper/lower byte strobes edge-aligned on read, center-aligned on write; enabled via EMR(1) |
| ODT | On-Die Termination Control | Active-HIGH signal enabling internal parallel termination resistors (75 Ω or 150 Ω) on DQ/DQS |
| CKE | Clock Enable | Gates internal clock tree; LOW disables all operations and enters power-down states |
| CS, RAS, CAS, WE | Command Inputs | Encoded command bus (with BA) defining ACTIVATE, READ, WRITE, PRECHARGE, REFRESH |
| CLK / CLK | Differential Clock | Primary timing reference; all commands latched at CLK/CLK crossing, not edges |
| VREF | Input Reference Voltage | Mid-supply reference (VDDQ/2 ± 300 mV) for SSTL_18 input threshold stability |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable 75 Ω or 150 Ω termination on DQ/DQS lines eliminates external resistors and improves signal integrity |
| Off-Chip Driver (OCD) Calibration | Dynamic impedance tuning of DQ output drivers matches PCB trace impedance, reducing reflections and jitter |
| Posted CAS with Additive Latency | AL = 0–2 allows pipelining of column commands ahead of row activation, improving bus utilization efficiency |
| Auto-Precharge | Automatic bank precharge after burst transfers reduces manual command overhead and enables seamless multi-bank interleaving |
| DLL-Aligned DQ/DQS Timing | Digital delay lock loop ensures zero skew between data and strobe at receiver, enabling reliable >400 MT/s operation |
| Power-Down Modes | Precharged and active power-down reduce IDD6 to 12 mA and suppress dynamic switching during idle periods |
Applications
| Industrial HMI Controller | Network Switch Buffer |
|---|---|
Use Scenario: Touchscreen-based human-machine interface running real-time Linux with graphics overlay and local data logging. IC Role / Device Role / Timing Role: Primary system memory providing 16-bit wide data path to ARM Cortex-A8/A9 processor with DDR2 controller. Use Value: DDR2-667 bandwidth meets 1080p UI rendering and log buffering requirements while tRCD/tRP = 15 ns aligns with typical SoC controller timing budgets. | Use Scenario: Layer-2 Ethernet switch ASIC requiring packet buffering for 24-port 10/100/1000BASE-T aggregation. IC Role / Device Role / Timing Role: Frame buffer memory supporting burst-oriented packet ingress/egress with low-latency random access. Use Value: 8-bank architecture enables concurrent packet processing across ports; ODT and OCD ensure clean signal integrity on dense switch PCB layouts. |
| Medical Imaging Module | Video Surveillance DVR |
Use Scenario: Portable ultrasound unit capturing and processing real-time B-mode image streams at 30 fps. IC Role / Device Role / Timing Role: Frame buffer storing digitized RF echo data prior to beamforming and display rendering. Use Value: 2 Gb density supports ≥2 seconds of raw 12-bit echo data; CL=5 latency enables deterministic DMA transfer timing for real-time processing. | Use Scenario: Embedded DVR recording up to 8 channels of 720p H.264 video with motion detection and metadata tagging. IC Role / Device Role / Timing Role: System memory for video encoder SoC handling simultaneous encode, decode, and network streaming tasks. Use Value: Auto-refresh and self-refresh modes maintain data retention during standby; WBGA-84 footprint fits compact DVR board space constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H128M16HR-37E | Same 2 Gb density, DDR2-800 (375 MHz), CL=5, tRCD/tRP = 12.5 ns; 96-ball FBGA | Higher speed grade supports tighter timing budgets but requires faster controller and stricter layout | Select when system clock exceeds 333 MHz and board layout accommodates larger 96-ball package |
| IS42S16160F-3BL | 2 Gb DDR2-667, identical CL=5/tRCD/tRP=15 ns specs, same 84-ball WBGA, but rated -40°C to +85°C | Broader temperature range suits extended industrial or outdoor deployments | Choose for designs requiring guaranteed operation below 0°C without redesigning thermal management |
Compared with W972GG6JB-3 TR, MT47H128M16HR-37E offers higher bandwidth at the cost of tighter timing closure and larger footprint, while IS42S16160F-3BL provides identical electrical performance with extended temperature qualification-making it a drop-in replacement where cold ambient operation is critical.
Availability
W972GG6JB-3 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network switch buffers, medical imaging modules, and video surveillance DVRs requiring stable component supply, long-term lifecycle support, and JEDEC-compliant DDR2 memory with verified signal integrity features.
Supply support for W972GG6JB-3 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W972GG6JB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-sensitive, high-reliability embedded systems requiring JEDEC-standard synchronous DRAM with advanced signal integrity features like ODT and OCD calibration.
FAQ
What is the maximum data rate supported by the W972GG6JB-3 TR?
The W972GG6JB-3 TR supports DDR2-667 operation, delivering a maximum data rate of 667 MT/s (megatransfers per second) with a 333 MHz clock frequency. This is confirmed by its -3 speed grade designation and JEDEC-compliant 5-5-5 timing (tCL/tRCD/tRP = 5 cycles each at 3 ns per cycle). The device maintains full functionality within this specification across its rated temperature range of 0°C to 85°C.
Does the W972GG6JB-3 TR support on-die termination (ODT)?
Yes, the W972GG6JB-3 TR supports configurable on-die termination (ODT) via the ODT pin (Ball K9), enabling 75 Ω or 150 Ω termination resistance on DQ and DQS lines. This feature is programmed through Extended Mode Register 1 (EMR1) and eliminates the need for external termination resistors, improving signal integrity in point-to-point and multi-drop DDR2 memory interfaces.
What package type and ball count does the W972GG6JB-3 TR use?
The W972GG6JB-3 TR uses an 84-ball Wafer-Level Ball Grid Array (WBGA) package measuring 11 mm × 13 mm with 0.8 mm ball pitch. It is lead-free and RoHS compliant, with dedicated VDDQ/VSSQ planes for DQ noise isolation and separate VDDL/VSSDL pins for DLL power integrity-key for stable DLL operation at DDR2-667 speeds.
Can the W972GG6JB-3 TR operate in self-refresh mode, and what is its typical current draw?
Yes, the W972GG6JB-3 TR supports self-refresh mode to retain data during system sleep. Its typical self-refresh current (IDD6) is ≤12 mA at TCASE ≤ 85°C, as specified in the datasheet's DC characteristics table. This low power state is entered via command sequence and maintained without external clock input, making it suitable for battery-backed or low-power industrial applications.
What are the required initialization steps before normal operation of the W972GG6JB-3 TR?
Initialization of the W972GG6JB-3 TR requires a strict 13-step sequence: power ramp compliance, 200 µs stable clock, CKE assertion, PRECHARGE ALL, two EMRS commands (to EMR2 and EMR3), DLL enable, DLL reset, second PRECHARGE ALL, two AUTO REFRESH commands, MRS programming, and OCD calibration (or default exit). Skipping any step may result in undefined behavior or failure to achieve stable DDR2-667 operation.
W972GG6JB-3 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 60 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-WBGA (11x13)
W972GG6JB-3 TR FAQ
1.How can I place an order for W972GG6JB-3 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W972GG6JB-3 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W972GG6JB-3 TR reliable?
The price and inventory of W972GG6JB-3 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG6JB-3 TR is usually 5 days.
3.What payment methods are accepted for W972GG6JB-3 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG6JB-3 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W972GG6JB-3 TR?
W972GG6JB-3 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W972GG6JB-3 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W972GG6JB-3 TR?
For technical support, including W972GG6JB-3 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG6JB-3 TR requirements.
6.How does Aetrix verify that W972GG6JB-3 TR is sourced from the original manufacturer or authorized distributors?
All W972GG6JB-3 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG6JB-3 TR meets industry standards.
7.What is the process for return or replacement of W972GG6JB-3 TR?
All W972GG6JB-3 TR units undergo pre-shipment inspection (PSI). If there is an issue with W972GG6JB-3 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W972GG6JB-3 TR part is unused and in its original packaging.
Return procedure for W972GG6JB-3 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W972GG6JB-3 TR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
