Winbond Electronics Corporation W972GG6KB-18

Overview

W972GG6KB-18 from Winbond is a 2Gb (128M × 16) DDR2 SDRAM organized as 16M words × 8 banks × 16 bits, compliant with JEDEC DDR2-1066 (7-7-7) timing, operating at 1.8 V ± 0.1 V supply, and supporting CAS latencies of 3–7 for use in embedded computing, industrial controllers, and legacy communication baseband modules.

For engineers reviewing the W972GG6KB-18 datasheet, W972GG6KB-18 pinout, W972GG6KB-18 application, or W972GG6KB-18 equivalent, key selection considerations include its -18 speed grade timing (tCK = 1.875 ns min @ CL=7), on-die termination (ODT), OCD impedance calibration, differential clock interface (CLK/CLK), and WBGA-84 package compatibility with DDR2 memory subsystems requiring stable 1066 Mb/s/pin throughput.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous I/O referenced to edge-aligned read data and center-aligned write data. It supports programmable additive latency (AL=0–2), burst lengths of 4 or 8, and write latency WL = RL − 1.

Functional operation includes auto-precharge, self-refresh and power-down modes (precharged/active), ODT control via dedicated ODT pin, and OCD calibration using EMR(1) with A7–A9. The device integrates eight independent 16-bit banks, each with row/column decoders, sense amplifiers, and prefetch buffers feeding a 16-bit bidirectional DQ bus.

Key Specifications

Pinout & Package

W972GG6KB-18 is packaged in an 84-ball WBGA (8 mm × 12.5 mm) with ball pitch of 0.8 mm. Power and ground balls are distributed across the array to minimize simultaneous switching noise; VDDQ/VSSQ pairs isolate DQ I/O supply domains.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with W972GG6KB-18, MT47H128M16HR-37E offers lower cost and power but sacrifices 1066 MT/s performance and 2 Gb capacity; IS42S16160F-6BLI matches density and adds industrial temp range but trades 33% bandwidth reduction for thermal robustness.

Availability

W972GG6KB-18 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy telecom baseband modules, medical imaging display controllers, and automotive infotainment head units requiring stable component supply across extended production lifecycles.

Supply support for W972GG6KB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage and JEDEC-compliant product validation.

The W972GG6KB series belongs to Winbond's DDR2 SDRAM product line, engineered for drop-in compatibility with legacy DDR2 memory controllers in industrial, networking, and medical equipment where long-term availability and JEDEC specification adherence are critical.

FAQ

What is the maximum data rate supported by W972GG6KB-18?

W972GG6KB-18 supports DDR2-1066 operation with a minimum clock period (tCK) of 1.875 ns at CAS Latency 7, delivering up to 1066 Mb/s per pin. This is validated per JEDEC specification JESD79-2F and confirmed in the -18 speed grade binning on page 5 of the datasheet.

Does W972GG6KB-18 require external termination resistors?

No. W972GG6KB-18 integrates on-die termination (ODT) controlled by the ODT pin (ball K9). When asserted HIGH, it enables internal termination resistors on DQ/DQS lines, eliminating the need for external resistors and simplifying PCB layout.

What is the purpose of the VREF pin on W972GG6KB-18?

The VREF pin (ball J2) provides the reference voltage for address and control input receivers. It must be maintained at VDDQ/2 ±300 mV to ensure correct logic threshold detection; deviation beyond this range risks command decode errors or initialization failure.

Can W972GG6KB-18 operate in self-refresh mode at 95°C case temperature?

Yes - but only when configured per note 4 on page 5: EMR(2) bit A7 must be set to "1", and auto-refresh interval must be halved to tREFI = 3.9 µS (i.e., doubled refresh frequency). This is explicitly supported for -18-grade parts at 85–95°C.

How many banks does W972GG6KB-18 have, and how are they selected?

W972GG6KB-18 contains eight independent memory banks, selected using the BA0–BA2 signals (balls L2, L3, L1). Each ACTIVE, READ, WRITE, or PRECHARGE command targets exactly one bank, enabling bank-interleaved access to improve effective bandwidth.