Winbond Electronics Corporation W972GG6KB25I

Overview

W972GG6KB25I from Winbond Electronics is a 2Gb (128M × 16) DDR2 SDRAM organized as 16M words × 8 banks × 16 bits, supporting DDR2-800 (5-5-5 or 6-6-6) operation at 400 MHz clock frequency with CL=5/6, tRCD=12.5 ns, and industrial temperature range of −40°C to +95°C. It implements on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and auto-precharge for embedded control and networking memory subsystems.

For engineers reviewing the W972GG6KB25I datasheet, W972GG6KB25I pinout, W972GG6KB25I application, or W972GG6KB25I equivalent, key selection criteria include its industrial-grade thermal rating, SSTL_18 interface compliance, differential clock and DQS strobe support, programmable additive latency (AL=0–2), and WBGA-84 package with isolated VSSQ/VDDL domains for signal integrity in high-speed memory channels.

Technical Context

This DDR2 SDRAM uses a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQ lines referenced to edge-aligned (read) or center-aligned (write) differential UDQS/LDQS strobes. Its DLL aligns DQ and DQS transitions to clock edges, enabling stable 400 MHz operation under industrial thermal stress.

Functional control includes programmable CAS latency (CL=3–7), burst length (BL=4/8), posted CAS (AL=0–2), write latency (WL = RL−1), and ODT activation via dedicated ODT pin. The device supports self-refresh, auto-refresh, precharged/active power-down modes, and OCD calibration for precise output driver impedance matching to PCB trace characteristics.

Key Specifications

Pinout & Package

W972GG6KB25I is packaged in an 84-ball WBGA (8 mm × 12.5 mm, 0.8 mm pitch) with lead-free, RoHS-compliant construction. The package features physically isolated VSSQ (DQ ground) and VDDL (DLL power) balls to minimize switching noise coupling into timing circuitry.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H128M16HR-25E and IS42S16160F-25BLI, W972GG6KB25I provides hardware-calibrated OCD and flexible ODT activation-critical for maintaining signal integrity in high-density, thermally variable memory channels without external components or layout compromises.

Availability

W972GG6KB25I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W972GG6KB25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W972GG6KB25I belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for applications demanding guaranteed performance across −40°C to +95°C with robust signal integrity features like OCD and ODT.

FAQ

What is the maximum clock frequency supported by W972GG6KB25I?

W972GG6KB25I supports a maximum clock frequency of 400 MHz, corresponding to DDR2-800 data rates (800 Mb/s per pin). This is validated under industrial temperature conditions (−40°C to +95°C) with CL=5 or CL=6 timing, and requires tRCD ≥ 12.5 ns and tRP ≥ 12.5 ns per JEDEC specification compliance.

Does W972GG6KB25I support on-die termination (ODT) and how is it controlled?

Yes, W972GG6KB25I supports ODT via a dedicated ODT pin (Ball K9), which enables internal termination resistors on DQ and DQS lines when driven HIGH. ODT configuration is further refined through Extended Mode Register EMR(1), allowing selection of 75 Ω, 150 Ω, or other values depending on system topology and signal integrity requirements.

What is the purpose of the VDDL and VSSDL pins on W972GG6KB25I?

VDDL (Ball J1) supplies dedicated 1.8 V power to the DLL circuitry, while VSSDL (Ball R2) provides its isolated ground return path. This separation prevents DLL timing jitter caused by I/O switching noise, ensuring stable DQ–DQS alignment across temperature and voltage variations in W972GG6KB25I operation.

How does W972GG6KB25I handle refresh at elevated temperatures (85–95°C)?

At case temperatures between 85°C and 95°C, W972GG6KB25I requires doubling the auto-refresh frequency to maintain data retention-reducing tREFI from 7.8 μs to 3.9 μs. This is achieved by setting A7=1 in EMR(2), triggering the device to accept 32 ms refresh intervals instead of the standard 64 ms.

Can W972GG6KB25I be used in systems requiring burst interrupt functionality?

Yes, W972GG6KB25I supports burst interrupt for both read and write operations with BL=8. For example, a read burst with RL=3 (CL=3, AL=0) can be interrupted after any beat, enabling dynamic priority handling in real-time systems without waiting for full burst completion-verified in timing diagrams 11.12 and 11.13 of the datasheet.