Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W972GG6KB25I TR

Name: W972GG6KB25I TR
Brand: Winbond Electronics Corporation
SKU: W972GG6KB25I TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: W972GG6KB25I TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 84-TFBGA

Datasheet:: W972GG6KB25I TR.pdf

Description:: IC DRAM 2GBIT 84-WBGA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,835

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

W972GG6KB25I TR from Winbond Electronics is a 2G-bit DDR2 SDRAM organized as 16M × 8 banks × 16 bits, supporting DDR2-800 (5-5-5 or 6-6-6) operation at 1.8 V, with industrial temperature range (–40°C to +95°C), CAS latency options of 3–7, and on-die termination (ODT) for signal integrity in high-speed memory subsystems used in networking and industrial control systems.

For engineers reviewing the W972GG6KB25I TR datasheet, W972GG6KB25I TR pinout, W972GG6KB25I TR application, or W972GG6KB25I TR equivalent, key selection criteria include industrial-grade thermal reliability, SSTL_18 interface compliance, OCD impedance calibration support, and WBGA-84 ball mapping for PCB layout validation.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing, posted CAS (AL = 0–2), and programmable additive latency to decouple command issuance from data availability. It supports bi-directional differential DQS strobes (UDQS/LDQS) edge-aligned on reads and center-aligned on writes.

Functional operation includes auto-precharge, burst interrupt, seamless read/write bursts (BL=4/8), ODT dynamic enable/disable via EMR(1), and OCD calibration for output driver impedance matching. Refresh is managed via Auto Refresh (tREFI = 7.8 µS at ≤85°C; 3.9 µS at 85–95°C) and Self Refresh modes with IDD6 ≤ 10 mA.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (16M words × 8 banks × 16 bits), enabling 256 MB of 16-bit wide memory space per device.
Data Rate	DDR2-800 (400 MHz clock → 800 MT/s), supporting sustained bandwidth up to 1280 MB/s in 16-bit configuration.
CAS Latency	Programmable CL = 3, 4, 5, 6, or 7; determines minimum read access latency in clock cycles after column address assertion.
Supply Voltage	VDD/VDDQ = 1.8 V ± 0.1 V; strict tolerance required for stable I/O and core logic operation across industrial temperature range.
Operating Temperature	–40°C ≤ TCASE ≤ 95°C; validated for full JEDEC AC/DC specs only with 25I speed grade and doubled refresh rate above 85°C.
Burst Length	Configurable BL = 4 or 8; defines number of consecutive data transfers per READ/WRITE command, directly impacting bus efficiency and latency.
On-Die Termination	ODT enabled via EMR(1); provides programmable termination resistance (75 Ω or 150 Ω) on DQ/DQS lines to suppress reflections without external resistors.
Package	WBGA-84 (8 mm × 12.5 mm, 0.8 mm pitch); RoHS-compliant, lead-free, with isolated VSSQ/VDDL planes for noise immunity.

Pinout & Package

W972GG6KB25I TR uses an 84-ball WBGA package with dedicated power/ground separation (VDD/VSS, VDDQ/VSSQ, VDDL/VSSDL), differential clock (CLK/CLK), dual-byte data strobes (UDQS/UDQS, LDQS/LDQS), and bank/address/data routing optimized for DDR2 layout rules including controlled impedance and length-matching requirements.

Pin/Terminal	Circuit Role	Design Meaning
A0–A13	Address Input	Row/column address bus; A10 controls auto-precharge; all sampled on CLK/CLK crossing for synchronous latch timing.
BA0–BA2	Bank Select	3-bit field selecting one of eight internal banks for concurrent activation and interleaved access.
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; SSTL_18 compatible; driven/received synchronously with DQS strobes.
UDQS / LDQS	Differential Data Strobe	Source-synchronous strobes for upper (DQ8–DQ15) and lower (DQ0–DQ7) bytes; edge-aligned on reads, center-aligned on writes.
CKE	Clock Enable	Asynchronous gate controlling internal clock tree activation; LOW disables all timing-sensitive operations including self-refresh exit.
CS, RAS, CAS, WE	Command Inputs	Encoded command bus; all sampled on CLK/CLK crossing; CS enables rank-level command decoding.
ODT	On-Die Termination Control	Registered input enabling/disabling internal termination resistors on DQ/DQS lines during read/write cycles to reduce stub reflections.
VREF	Input Reference Voltage	Mid-supply reference (VDDQ/2 ± 300 mV) for SSTL_18 input threshold setting; must track VDDQ during ramp and operation.

Key Features

Feature	Design Value
OCD Impedance Calibration	Off-chip driver output impedance adjustable via EMR(1) to match trace Z₀ (e.g., 50 Ω), reducing signal overshoot/undershoot and improving eye margin.
Programmable Additive Latency	AL = 0–2 allows pipelining of CAS commands ahead of row activation, increasing command bus utilization without violating tRCD timing.
Write Latency Control	WL = RL – 1 ensures write data arrival aligns with DQS center point; eliminates need for write leveling circuitry in controller.
Dual-Voltage Power Domains	Separate VDD (core), VDDQ (I/O), and VDDL (DLL) supplies isolate noise sources and allow independent power sequencing per JEDEC DDR2 spec.
Industrial Refresh Management	Supports tREFI = 3.9 µS at 85–95°C via EMR(2) bit A7 = 1, doubling refresh rate to maintain data retention under extended thermal stress.
Power Down Modes	Precharged Power Down (IDD2P ≤ 25 mA) and Active Power Down (IDD3N ≤ 45 mA) reduce standby current while preserving bank state or array contents.

Applications

Industrial PLC Memory Buffer	Network Switch Packet Buffer
Use Scenario: Real-time deterministic data buffering in programmable logic controllers handling multiple I/O modules and motion control loops. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and cyclic process data storage, interfaced to ARM Cortex-M7 or RISC-V SoC via 16-bit DDR2 controller. Use Value: Industrial temperature rating (–40°C to +95°C) and guaranteed DDR2-800 (5-5-5) timing ensure reliable operation in uncooled cabinet environments without derating.	Use Scenario: High-throughput packet buffering in Layer 2/3 Ethernet switches supporting 10/100/1000BASE-T ports and QoS queuing. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by ingress/egress engines and traffic managers using bank interleaving. Use Value: BL=8 burst mode and tRC = 57.5 ns (min) enable >1.2 GB/s sustained throughput across 8-bank parallelism, meeting line-rate forwarding requirements.
Medical Imaging System Frame Store	Automotive ADAS Video Preprocessor
Use Scenario: Temporary frame storage in ultrasound or digital X-ray systems requiring low-latency access to multi-megapixel image buffers. IC Role / Device Role / Timing Role: Low-latency DDR2 memory mapped to FPGA-based image pipeline for real-time pixel reformatting and DICOM compression. Use Value: CAS latency CL=3 and tRCD = 12.5 ns minimize read-to-data delay, critical for sub-frame processing deadlines in real-time imaging workflows.	Use Scenario: Vision preprocessing buffer in automotive surround-view or lane-departure systems using TI TDA3x or NXP S32V234 SoCs. IC Role / Device Role / Timing Role: Dedicated memory for camera sensor frame buffering and hardware-accelerated ISP pipelines before GPU/CNN inference. Use Value: On-die termination (ODT) and OCD calibration eliminate need for external termination resistors, reducing BOM count and PCB area in space-constrained automotive modules.

Industrial PLC Memory Buffer

Network Switch Packet Buffer

Use Scenario: Real-time deterministic data buffering in programmable logic controllers handling multiple I/O modules and motion control loops.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and cyclic process data storage, interfaced to ARM Cortex-M7 or RISC-V SoC via 16-bit DDR2 controller.

Use Value: Industrial temperature rating (–40°C to +95°C) and guaranteed DDR2-800 (5-5-5) timing ensure reliable operation in uncooled cabinet environments without derating.

Use Scenario: High-throughput packet buffering in Layer 2/3 Ethernet switches supporting 10/100/1000BASE-T ports and QoS queuing.

IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by ingress/egress engines and traffic managers using bank interleaving.

Use Value: BL=8 burst mode and tRC = 57.5 ns (min) enable >1.2 GB/s sustained throughput across 8-bank parallelism, meeting line-rate forwarding requirements.

Medical Imaging System Frame Store

Automotive ADAS Video Preprocessor

Use Scenario: Temporary frame storage in ultrasound or digital X-ray systems requiring low-latency access to multi-megapixel image buffers.

IC Role / Device Role / Timing Role: Low-latency DDR2 memory mapped to FPGA-based image pipeline for real-time pixel reformatting and DICOM compression.

Use Value: CAS latency CL=3 and tRCD = 12.5 ns minimize read-to-data delay, critical for sub-frame processing deadlines in real-time imaging workflows.

Use Scenario: Vision preprocessing buffer in automotive surround-view or lane-departure systems using TI TDA3x or NXP S32V234 SoCs.

IC Role / Device Role / Timing Role: Dedicated memory for camera sensor frame buffering and hardware-accelerated ISP pipelines before GPU/CNN inference.

Use Value: On-die termination (ODT) and OCD calibration eliminate need for external termination resistors, reducing BOM count and PCB area in space-constrained automotive modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H128M16RT-25E IT:C	Same density (2Gb), 84-ball FBGA, DDR2-800 (5-5-5), but rated –40°C to +85°C (not 95°C); higher IDD currents (e.g., IDD4R = 165 mA vs. 155 mA).	Lacks extended 95°C support; requires thermal derating or additional cooling in high-ambient automotive/industrial enclosures.	Select when full 95°C operation is not required and Micron's long-term supply commitment is preferred.
IS42S16160F-25BLI	2Gb DDR2-800 (5-5-5), 84-ball FBGA, industrial –40°C to +85°C; no ODT support; fixed CL=3 only; no OCD calibration.	Requires external termination; lacks dynamic impedance tuning and flexible latency configuration, limiting signal integrity margin in dense layouts.	Select for cost-sensitive applications where simplified timing and absence of ODT/OCD are acceptable trade-offs.

Compared with MT47H128M16RT-25E IT:C and IS42S16160F-25BLI, W972GG6KB25I TR uniquely delivers verified 95°C operation with full JEDEC compliance, integrated ODT, and OCD calibration-enabling robust signal integrity and thermal resilience in mission-critical embedded systems without layout or firmware compromises.

Availability

W972GG6KB25I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.

Supply support for W972GG6KB25I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM, with ISO 9001-certified manufacturing and global distribution.

The W972GG6KB series targets cost-optimized, thermally robust DDR2 memory for industrial and networking applications where extended temperature operation and JEDEC compliance are mandatory design requirements.

FAQ

What is the maximum operating frequency supported by W972GG6KB25I TR?

W972GG6KB25I TR supports DDR2-800 operation, meaning a maximum clock frequency of 400 MHz and data transfer rate of 800 MT/s. This is validated for both 5-5-5 and 6-6-6 timing bins across its full industrial temperature range (–40°C to +95°C), with tCK(min) = 2.5 ns at CL=5/6 and tCK(max) = 8 ns.

Does W972GG6KB25I TR support on-die termination (ODT)?

Yes, W972GG6KB25I TR supports programmable on-die termination via the ODT pin and Extended Mode Register EMR(1). It offers selectable termination resistance values (75 Ω or 150 Ω) on DQ and DQS lines, eliminating the need for external termination resistors and improving signal integrity in high-speed DDR2 layouts.

What is the purpose of the VREF pin on W972GG6KB25I TR?

The VREF pin on W972GG6KB25I TR provides the reference voltage (VDDQ/2 ± 300 mV) for SSTL_18 input receivers. It must be stable and accurately tracked during power-up and operation to ensure correct logic level detection on address, command, and control signals-critical for reliable initialization and command decoding.

How does W972GG6KB25I TR handle refresh at elevated temperatures (85–95°C)?

W972GG6KB25I TR supports extended-temperature refresh by setting bit A7 = 1 in EMR(2), which halves tREFI from 7.8 µS to 3.9 µS. This doubles the Auto Refresh command rate to maintain data retention at TCASE = 85–95°C, a capability explicitly validated for the 25I speed grade per its datasheet specification.

Is W972GG6KB25I TR pin-compatible with other Winbond DDR2 SDRAMs in the same package?

W972GG6KB25I TR uses the standard 84-ball WBGA footprint defined for DDR2 SDRAMs and shares identical ball assignment (A0–A13, BA0–BA2, DQ0–DQ15, etc.) with other Winbond W972GG6KB variants (e.g., -18, -3I). However, speed grade and temperature bin differences mean timing parameters and thermal validation are not interchangeable without design verification.

W972GG6KB25I TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 84-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: -

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 57.5 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: -40°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 84-WBGA (8x12.5)

W972GG6KB25I TR FAQ

1.How can I place an order for W972GG6KB25I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG6KB25I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG6KB25I TR reliable?

The price and inventory of W972GG6KB25I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG6KB25I TR is usually 5 days.

3.What payment methods are accepted for W972GG6KB25I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG6KB25I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W972GG6KB25I TR?

W972GG6KB25I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG6KB25I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG6KB25I TR?

For technical support, including W972GG6KB25I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG6KB25I TR requirements.

6.How does Aetrix verify that W972GG6KB25I TR is sourced from the original manufacturer or authorized distributors?

All W972GG6KB25I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG6KB25I TR meets industry standards.

7.What is the process for return or replacement of W972GG6KB25I TR?

All W972GG6KB25I TR units undergo pre-shipment inspection (PSI). If there is an issue with W972GG6KB25I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG6KB25I TR part is unused and in its original packaging.

Return procedure for W972GG6KB25I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…