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Winbond Electronics Corporation W972GG6KB-25 TR

Name: W972GG6KB-25 TR
Brand: Winbond Electronics Corporation
SKU: W972GG6KB-25 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W972GG6KB-25 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 84-TFBGA

Datasheet:: W972GG6KB-25 TR.pdf

Description:: IC DRAM 2GBIT 84-WBGA

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Product details

Overview

W972GG6KB-25 TR from Winbond is a 2Gb (128M × 16) DDR2 SDRAM organized as 16M words × 8 banks × 16 bits, compliant with JEDEC DDR2-800 (5-5-5 or 6-6-6) timing, operating at 1.8 V ±0.1 V supply, and supporting CAS Latency 3–7, burst lengths 4/8, and on-die termination (ODT) for high-speed memory subsystems in embedded networking and industrial control applications.

For engineers reviewing the W972GG6KB-25 TR datasheet, W972GG6KB-25 TR pinout, W972GG6KB-25 TR application, or W972GG6KB-25 TR equivalent, key selection criteria include DDR2-800 speed grade compliance, WBGA-84 ball package compatibility, SSTL_18 interface voltage tolerance, OCD impedance calibration support, and industrial temperature option (-25I) availability.

Technical Context

This DDR2 SDRAM implements double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing, posted CAS (AL = 0–2), and write latency WL = RL − 1. It supports source-synchronous read/write via edge-aligned (read) and center-aligned (write) bi-directional DQS strobes for upper (UDQS) and lower (LDQS) data bytes.

Functional operation includes auto-precharge, self-refresh, precharged/active power-down modes, ODT programmable per-bank, and OCD impedance adjustment via EMR(1). Initialization requires strict sequence: stable power → 200 µs clock → CKE high → PRE ALL → EMRS(2)/EMRS(3)/DLL enable → MRS → OCD calibration.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (128M × 16), 16M words × 8 banks × 16 bits - defines usable capacity and bank parallelism for interleaved access.
Data Rate	DDR2-800 (400 MHz clock, 800 MT/s) - determines maximum sustained bandwidth of 1.28 GB/s in 16-bit configuration.
CAS Latency	CL = 3, 4, 5, 6, or 7 - sets minimum read-to-output delay; CL=5 enables JEDEC DDR2-800 (5-5-5) timing compliance.
Burst Length	BL = 4 or 8 - controls number of consecutive data transfers per read/write command; BL=8 required for full cache-line fill.
Supply Voltage	VDD/VDDQ = 1.8 V ± 0.1 V - mandates compatible 1.8 V power delivery and SSTL_18 I/O interface design.
Operating Temp	0°C ≤ TCASE ≤ 85°C (standard); -40°C to 95°C available in -25I variant - constrains thermal management and derating in industrial environments.
tRCD / tRP	12.5 ns min (DDR2-800 @ CL=5) - defines minimum row activation and precharge intervals affecting memory controller timing margins.
Package	WBGA-84 (8 mm × 12.5 mm, 0.8 mm pitch) - specifies PCB footprint, solder joint reliability, and thermal dissipation capability.

Pinout & Package

W972GG6KB-25 TR uses an 84-ball Wafer-Level Ball Grid Array (WBGA) package with 0.8 mm pitch, RoHS-compliant lead-free construction, and isolated VSSQ/VDDL/VSSDL grounds for noise suppression in high-speed DDR2 interfaces.

Pin/Terminal	Circuit Role	Design Meaning
A0–A13	Address Inputs	Row address (A0–A13) and column address (A0–A9); A10 controls auto-precharge - defines memory addressing space and command decoding.
BA0–BA2	Bank Select	Selects one of eight internal banks for ACTIVE/READ/WRITE/PRECHARGE - enables bank-level parallelism and interleaving.
DQ0–DQ15	Data I/O	16-bit bidirectional data bus - carries read data output and write data input; requires matched trace length and termination.
UDQS / LDQS	Differential Data Strobe	Source-synchronous strobes for upper (DQ8–DQ15) and lower (DQ0–DQ7) bytes; edge-aligned on read, center-aligned on write - critical for timing closure.
CLK / CLK	Differential Clock Input	Samples all commands and addresses at crossing points; drives internal DLL - sets system clock domain and jitter sensitivity.
CKE	Clock Enable	Controls power-down entry/exit and clock gating - used for dynamic power management during idle periods.
CS, RAS, CAS, WE	Command Inputs	Encoded command bus (with BA and address) - defines all operations including refresh, precharge, activate, read, write, and mode register setup.
ODT	On-Die Termination Control	Active-HIGH signal enabling internal termination resistors on DQ/DQS - eliminates need for external termination and reduces board area.
UDM / LDM	Data Mask Inputs	Byte-level write masking sampled on both DQS edges - allows partial writes without read-modify-write cycles.
VREF	Input Reference Voltage	Reference for address/command input thresholds; must track VDDQ/2 ±30 mV - ensures robust signal integrity across voltage/temp variation.

Key Features

Feature	Design Value
On-Die Termination (ODT)	Programmable per-bank termination resistance eliminates external resistors, reduces signal reflections, and simplifies layout for point-to-point DDR2 channels.
Off-Chip Driver (OCD) Calibration	Dynamic impedance tuning of DQ output drivers via EMR(1) improves signal integrity and margin under varying voltage/temperature conditions.
Posted CAS with Additive Latency	AL = 0–2 decouples command bus occupancy from data return timing, increasing command bus efficiency in burst-heavy workloads.
Auto-Precharge	Automatic bank precharge triggered by burst end reduces controller overhead and enables seamless back-to-back accesses across banks.
Self-Refresh Mode	Low-current (≤10 mA) retention mode with internal refresh counter - maintains data during CPU sleep or system suspend without external refresh commands.
Differential DQS Strobes	Separate UDQS/LDQS pairs for upper/lower byte lanes support independent timing alignment and reduce inter-byte skew in 16-bit interfaces.

Applications

Industrial PLC Memory Buffer	Network Switch Packet Buffer
Use Scenario: Real-time deterministic I/O scanning and logic execution in programmable logic controllers requiring reliable memory retention across wide temperature swings. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and process data storage, interfaced to ARM Cortex-M7 or RISC-V SoC with DDR2 controller. Use Value: -25I industrial variant guarantees operation from -40°C to 95°C with doubled refresh at high temp, ensuring data integrity in uncontrolled cabinet environments.	Use Scenario: Temporary storage of ingress/egress Ethernet frames in Layer 2/L3 managed switches handling 1 Gbps+ line rates. IC Role / Device Role / Timing Role: High-bandwidth packet buffer supporting concurrent read/write bursts with auto-precharge and posted CAS to maximize throughput. Use Value: DDR2-800 (800 MT/s) delivers 1.28 GB/s peak bandwidth over 16-bit bus, sufficient for multi-port cut-through switching with low latency.
Medical Imaging Front-End Controller	Automotive ADAS Camera Interface
Use Scenario: Frame buffering and real-time image processing pipeline in portable ultrasound or digital X-ray systems with strict EMI and power constraints. IC Role / Device Role / Timing Role: Low-power DDR2 memory subsystem using active/precharged power-down modes between imaging cycles to minimize average current draw. Use Value: IDD6 ≤ 10 mA in self-refresh and IDD0 ≤ 75 mA active current enable battery-operated designs meeting IEC 60601 leakage limits.	Use Scenario: Vision processing buffer for surround-view or lane-departure camera modules operating in vehicle cabin or engine bay environments. IC Role / Device Role / Timing Role: Robust memory interface with OCD calibration and ODT to maintain signal integrity despite automotive EMI and voltage ripple. Use Value: SSTL_18 I/O and 1.8 V supply align with automotive-grade PMIC outputs; WBGA-84 package withstands thermal cycling per AEC-Q200 requirements.

Industrial PLC Memory Buffer

Network Switch Packet Buffer

Use Scenario: Real-time deterministic I/O scanning and logic execution in programmable logic controllers requiring reliable memory retention across wide temperature swings.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and process data storage, interfaced to ARM Cortex-M7 or RISC-V SoC with DDR2 controller.

Use Value: -25I industrial variant guarantees operation from -40°C to 95°C with doubled refresh at high temp, ensuring data integrity in uncontrolled cabinet environments.

Use Scenario: Temporary storage of ingress/egress Ethernet frames in Layer 2/L3 managed switches handling 1 Gbps+ line rates.

IC Role / Device Role / Timing Role: High-bandwidth packet buffer supporting concurrent read/write bursts with auto-precharge and posted CAS to maximize throughput.

Use Value: DDR2-800 (800 MT/s) delivers 1.28 GB/s peak bandwidth over 16-bit bus, sufficient for multi-port cut-through switching with low latency.

Medical Imaging Front-End Controller

Automotive ADAS Camera Interface

Use Scenario: Frame buffering and real-time image processing pipeline in portable ultrasound or digital X-ray systems with strict EMI and power constraints.

IC Role / Device Role / Timing Role: Low-power DDR2 memory subsystem using active/precharged power-down modes between imaging cycles to minimize average current draw.

Use Value: IDD6 ≤ 10 mA in self-refresh and IDD0 ≤ 75 mA active current enable battery-operated designs meeting IEC 60601 leakage limits.

Use Scenario: Vision processing buffer for surround-view or lane-departure camera modules operating in vehicle cabin or engine bay environments.

IC Role / Device Role / Timing Role: Robust memory interface with OCD calibration and ODT to maintain signal integrity despite automotive EMI and voltage ripple.

Use Value: SSTL_18 I/O and 1.8 V supply align with automotive-grade PMIC outputs; WBGA-84 package withstands thermal cycling per AEC-Q200 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H128M16HR-25E	Same density (2Gb), same DDR2-800 speed grade, but uses TSOP-84 package with different pinout and no OCD calibration.	Limited to lower-vibration environments due to TSOP mechanical robustness; lacks dynamic impedance tuning for marginal layouts.	Choose when board space permits TSOP and signal integrity margins are sufficient without OCD.
IS42S16160F-6BLI	2Gb DDR2-667 (CL=5, tCK=3 ns), industrial temp (-40°C to 85°C), same WBGA-84 package and pin-compatible ball map.	Lower bandwidth (667 MT/s) and reduced timing margin; suitable where cost is prioritized over peak performance.	Choose for cost-sensitive industrial designs where DDR2-667 timing meets system throughput requirements.

Compared with W972GG6KB-25 TR, MT47H128M16HR-25E trades package flexibility and OCD for legacy TSOP compatibility, while IS42S16160F-6BLI offers identical packaging and industrial rating at reduced speed-enabling drop-in replacement only if timing budgets allow 133 MT/s lower data rate.

Availability

W972GG6KB-25 TR is available at Aetrix Electronics and suitable for industrial PLCs, network packet buffers, medical imaging front-ends, and automotive ADAS camera interfaces requiring stable component supply, long-lifecycle support, and guaranteed DDR2-800 timing compliance.

Supply support for W972GG6KB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W972GG6KB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-sensitive, high-reliability embedded systems requiring JEDEC-compliant DDR2 functionality with extended temperature support and advanced signal integrity features.

FAQ

What DDR2 speed grade does W972GG6KB-25 TR support?

W972GG6KB-25 TR supports DDR2-800 operation at 400 MHz clock frequency with data transfer rates up to 800 MT/s. It complies with JEDEC timing specifications for both 5-5-5 and 6-6-6 configurations, and supports CAS Latency values of 3 through 7. The "-25" suffix explicitly denotes this DDR2-800 speed grade, validated across 0°C to 85°C case temperature range.

Is W972GG6KB-25 TR pin-compatible with other DDR2 SDRAMs in WBGA-84 package?

W972GG6KB-25 TR follows standard DDR2 ballout conventions for 16-bit x8-bank devices in WBGA-84, matching JEDEC-defined signal placement for CLK/CLK, DQS/DQS, DQ, address, and command pins. However, exact pin compatibility with other vendors' parts (e.g., Micron or ISSI) requires verification against their specific ball maps, as minor variations in NC, VSSQ, or test pin assignments may exist. Always cross-check ball descriptions before substitution.

Does W972GG6KB-25 TR support industrial temperature range?

W972GG6KB-25 TR is rated for 0°C ≤ TCASE ≤ 85°C. For industrial operation from -40°C to 95°C, the W972GG6KB-25I variant must be selected. The -25I part shares identical electrical specs and pinout but adds extended temperature validation, including doubled refresh rate (tREFI = 3.9 µS) and self-refresh enablement at high temperature via EMR(2) bit A7.

How is On-Die Termination (ODT) controlled on W972GG6KB-25 TR?

ODT on W972GG6KB-25 TR is controlled by the dedicated ODT input pin (Ball K9), which enables internal termination resistors on DQ and DQS lines when driven HIGH. Termination strength is configured via Extended Mode Register EMR(1), and ODT status can be independently set per bank. This eliminates need for external termination resistors and improves signal integrity in point-to-point DDR2 topologies.

What is the purpose of OCD calibration in W972GG6KB-25 TR?

OCD (Off-Chip Driver) calibration in W972GG6KB-25 TR dynamically adjusts the output impedance of DQ drivers to match transmission line characteristics, compensating for voltage and temperature drift. Executed during initialization via EMR(1) commands, it ensures consistent signal rise/fall times and reduces overshoot/undershoot-critical for maintaining timing margins in high-speed DDR2 interfaces.

W972GG6KB-25 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 84-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 2Gbit

Memory Organization:: 128M x 16

Memory Interface:: -

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 57.5 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 84-WBGA (8x12.5)

W972GG6KB-25 TR FAQ

1.How can I place an order for W972GG6KB-25 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG6KB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG6KB-25 TR reliable?

The price and inventory of W972GG6KB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG6KB-25 TR is usually 5 days.

3.What payment methods are accepted for W972GG6KB-25 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG6KB-25 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W972GG6KB-25 TR?

W972GG6KB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG6KB-25 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG6KB-25 TR?

For technical support, including W972GG6KB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG6KB-25 TR requirements.

6.How does Aetrix verify that W972GG6KB-25 TR is sourced from the original manufacturer or authorized distributors?

All W972GG6KB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG6KB-25 TR meets industry standards.

7.What is the process for return or replacement of W972GG6KB-25 TR?

All W972GG6KB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W972GG6KB-25 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG6KB-25 TR part is unused and in its original packaging.

Return procedure for W972GG6KB-25 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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