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Winbond Electronics Corporation W972GG8JB-18
- Part No.:
- W972GG8JB-18
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W972GG8JB-18.pdf
- Description:
- IC DRAM 2GBIT PAR 60WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,333
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Product details
Overview
W972GG8JB-18 from Winbond Electronics is a 2Gb (256M × 8) DDR2 SDRAM organized in 8 banks, operating at DDR2-1066 speed (7-7-7 timing), with 1.8 V core and I/O supply, CAS latency programmable from 3 to 7, and SSTL_18 interface compliance. It serves as main system memory in embedded networking and industrial control platforms requiring high-bandwidth, low-latency data buffering.
For engineers reviewing the W972GG8JB-18 datasheet, W972GG8JB-18 pinout, W972GG8JB-18 application, or W972GG8JB-18 equivalent, key selection considerations include its -18 speed grade timing (tCK = 1.875 ns min @ CL=7), on-die termination (ODT), OCD impedance calibration, differential clock (CLK/CLK) and strobe (DQS/DQS) support, and WBGA-60 package compatibility.
Technical Context
This DDR2 SDRAM implements double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing for precise source-synchronous read/write operations. It supports posted CAS (AL = 0–2), burst lengths of 4 or 8, and write latency WL = RL − 1.
Functional operation includes auto-precharge, self-refresh (IDD6 ≤ 12 mA), active/precharged power-down modes, and configurable ODT via EMR(1). Initialization requires strict sequence including EMRS to EMR(2)/EMR(3), DLL enable/reset, and OCD calibration - all executed under all-bank precharge and stable clock conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (32M × 8 banks × 8 bits), enabling 256 MB byte-addressable capacity |
| Data Rate | DDR2-1066 (1066 Mb/s per pin), supporting 533 MHz clock with 1.875 ns minimum tCK @ CL=7 |
| Voltage Supply | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V, requiring tightly regulated dual-rail 1.8 V supplies |
| CAS Latency | Programmable CL = 3–7, directly determining read access delay (e.g., CL=7 → 13.125 ns min tRCD) |
| Burst Length | Configurable BL = 4 or 8, defining consecutive data transfers per read/write command |
| Interface Standard | SSTL_18-compliant inputs/outputs, mandating 1.8 V reference termination and compatible driver/receiver design |
| On-Die Termination | ODT enabled via EMR(1), providing dynamic, pin-selectable termination resistance for signal integrity |
| Power Consumption | IDD4R ≤ 165 mA (burst read), IDD6 ≤ 12 mA (self-refresh), critical for thermal and PSU sizing |
Pinout & Package
Packaged in RoHS-compliant, lead-free WBGA-60 (11 mm × 11.5 mm) with 0.8 mm ball pitch. Ball layout supports standard DDR2 routing constraints including separate VDDQ/VSSQ planes and isolated DLL power (VDDL/VSSDL).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address bus; A10 controls auto-precharge, A11/A12/A13/A14 used in extended mode register setup |
| BA0–BA2 | Bank Select | 3-bit bank address enabling concurrent access across 8 independent memory banks |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; matched loading with DQS/DM for timing closure |
| DQS / DQS | Differential Data Strobe | Source-synchronous edge-aligned (read) / center-aligned (write); enabled via EMR(1)[A10]=0 |
| CLK / CLK | Differential Clock | Primary timing reference; all commands latched at crossing of CLK rising and CLK falling edges |
| CS, RAS, CAS, WE | Command Control | Standard DDR2 command encoding; CS enables rank selection in multi-RAM systems |
| ODT | On-Die Termination Enable | Active-high signal controlling internal termination resistor activation during reads/writes |
| DM/RDQS | Data Mask or Read Strobe | Write mask input (DM) or secondary read strobe (RDQS) depending on EMR(1)[A11] setting |
| VREF | Input Reference Voltage | Tracks VDDQ/2 ± 300 mV; required for SSTL_18 input threshold stability |
| VDD / VDDQ / VDDL | Power Supplies | VDD (core), VDDQ (I/O), VDDL (DLL) each require dedicated 1.8 V ± 0.1 V regulation and decoupling |
Key Features
| Feature | Design Value |
|---|---|
| Off-Chip Driver (OCD) Calibration | Enables precise output impedance matching (±10%) to transmission line Z₀, reducing reflection-induced jitter |
| Programmable Additive Latency (AL) | AL = 0–2 allows pipelining of CAS commands ahead of row activation, improving command bus utilization |
| Differential Clock & Strobe Interface | CLK/CLK and DQS/DQS pairs provide noise-immune timing references essential for >533 MHz operation |
| Auto-Precharge & Burst Interrupt | Hardware-controlled bank precharge after burst completion; interrupt capability enables partial burst termination without penalty |
| Multi-Temperature Grade Support | -18 grade rated for 0°C to +85°C case temperature, validated for industrial ambient stability |
| Self-Refresh with Low IDD6 | 12 mA max current in self-refresh mode enables extended battery-backed or low-power standby operation |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution with cyclic data exchange between CPU and I/O modules. IC Role / Device Role / Timing Role: Primary working memory holding firmware, process variables, and buffered sensor/actuator data; operates under strict tRCD/tRP timing constraints. Use Value: DDR2-1066 bandwidth (≥8.5 GB/s aggregate) ensures zero-cycle stall during high-frequency I/O scanning cycles. | Use Scenario: Temporary storage of ingress/egress Ethernet frames in Layer 2/L3 switching ASICs. IC Role / Device Role / Timing Role: Shared packet buffer supporting concurrent read/write access across multiple switch ports with burst-length-8 efficiency. Use Value: Auto-precharge and posted CAS reduce command overhead, enabling ≥92% bus utilization under 100% line-rate traffic. |
| Medical Imaging Display Controller | Automotive ADAS Video Preprocessor |
Use Scenario: Frame buffering for real-time rendering of ultrasound or MRI scan data at 60+ fps. IC Role / Device Role / Timing Role: High-throughput pixel data staging memory interfaced to FPGA-based display pipeline with SSTL_18 I/O compliance. Use Value: 1.875 ns tCK and CL=5/6 configuration delivers sub-10 ns read latency critical for jitter-free video streaming. | Use Scenario: Intermediate storage of camera sensor outputs prior to CNN-based object detection in forward collision warning systems. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for vision preprocessing engines, operating within automotive temperature range. Use Value: On-die termination and OCD calibration maintain signal integrity across 10+ cm PCB traces in EMI-heavy vehicle environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H64M8CB-3−AAT:D | 64M × 8, DDR2-800 (CL=5, tCK=2.5 ns), 60-ball FBGA, Micron | Lower bandwidth (6.4 GB/s), higher tRCD (12.5 ns), industrial temp (−40°C to +95°C) | Select when system clock ≤400 MHz and extended temperature range is mandatory; not drop-in for DDR2-1066 designs. |
| IS42S16400F-6BLI | 16M × 16, DDR2-667 (CL=5, tCK=3.75 ns), 60-ball FBGA, ISSI | 16-bit bus width, lower density (256 Mb), slower speed grade, same package footprint | Choose for cost-sensitive 16-bit controller interfaces where bandwidth demand is ≤5.3 GB/s; requires PCB trace width and timing revalidation. |
Compared with MT47H64M8CB-3−AAT:D and IS42S16400F-6BLI, the W972GG8JB-18 delivers highest bandwidth per pin (1066 Mb/s) and lowest latency at full speed, making it optimal for 8-bit controllers targeting 533 MHz operation - though its 0°C to +85°C rating excludes extended-temperature deployments.
Availability
W972GG8JB-18 is available at Aetrix Electronics and suitable for industrial PLCs, network switches, medical imaging displays, and automotive ADAS subsystems requiring stable component supply, long-lifecycle support, and verified DDR2-1066 performance.
Supply support for W972GG8JB-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, communications, and consumer markets.
The W972GG8JB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-effective, high-reliability embedded systems needing JEDEC-compliant DDR2 functionality with robust initialization and power management.
FAQ
What is the maximum clock frequency supported by the W972GG8JB-18?
The W972GG8JB-18 supports a maximum clock frequency of 533 MHz, corresponding to DDR2-1066 data rate (1066 Mb/s per pin). This is confirmed by its -18 speed grade designation and minimum tCK of 1.875 ns at CAS Latency 7, as specified in the official Winbond datasheet revision A03.
Does the W972GG8JB-18 support on-die termination (ODT)?
Yes, the W972GG8JB-18 supports programmable on-die termination via the ODT pin and Extended Mode Register (EMR) configuration. ODT resistance values are set using EMR(1), and activation is controlled synchronously with read/write commands to improve signal integrity on high-speed DDR2 buses.
What package type and ball count does the W972GG8JB-18 use?
The W972GG8JB-18 uses a RoHS-compliant, lead-free WBGA-60 package measuring 11 mm × 11.5 mm with 0.8 mm ball pitch. Its 60-ball layout includes dedicated VDDQ/VSSQ planes and isolated DLL power rails (VDDL/VSSDL), as documented in the Winbond datasheet section 5 and 12.
Can the W972GG8JB-18 operate in self-refresh mode, and what is its typical current draw?
Yes, the W972GG8JB-18 supports self-refresh mode with maximum IDD6 current of 12 mA at case temperatures ≤85°C. This low-power state maintains data retention without external refresh commands, making it suitable for battery-backed or energy-constrained embedded applications.
What is the purpose of the DM/RDQS pin on the W972GG8JB-18?
The DM/RDQS pin on the W972GG8JB-18 serves dual function: as Data Mask (DM) during write operations to suppress individual byte writes, or as Read Data Strobe (RDQS) when enabled via EMR(1)[A11]=1. Its behavior is mode-selectable and electrically matched to DQ/DQS loading for timing consistency.
W972GG8JB-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 58.125 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-WBGA (11x11.5)
W972GG8JB-18 FAQ
1.How can I place an order for W972GG8JB-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for W972GG8JB-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W972GG8JB-18 reliable?
The price and inventory of W972GG8JB-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG8JB-18 is usually 5 days.
3.What payment methods are accepted for W972GG8JB-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG8JB-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W972GG8JB-18?
W972GG8JB-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W972GG8JB-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W972GG8JB-18?
For technical support, including W972GG8JB-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG8JB-18 requirements.
6.How does Aetrix verify that W972GG8JB-18 is sourced from the original manufacturer or authorized distributors?
All W972GG8JB-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG8JB-18 meets industry standards.
7.What is the process for return or replacement of W972GG8JB-18?
All W972GG8JB-18 units undergo pre-shipment inspection (PSI). If there is an issue with W972GG8JB-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W972GG8JB-18 part is unused and in its original packaging.
Return procedure for W972GG8JB-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W972GG8JB-18 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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