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Winbond Electronics Corporation W972GG8JB-18 TR

Name: W972GG8JB-18 TR
Brand: Winbond Electronics Corporation
SKU: W972GG8JB-18 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W972GG8JB-18 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 60-TFBGA

Datasheet:: W972GG8JB-18 TR.pdf

Description:: IC DRAM 2GBIT PAR 60WBGA

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Product details

Overview

W972GG8JB-18 TR from Winbond is a 2G-bit DDR2 SDRAM organized as 32M × 8 banks × 8 bits, compliant with DDR2-1066 (7-7-7) timing, operating at 1.8 V ±0.1 V supply, supporting CAS Latency 3–7, burst lengths 4/8, and SSTL_18 interface for embedded memory subsystems in industrial control and networking equipment.

For engineers reviewing the W972GG8JB-18 TR datasheet, W972GG8JB-18 TR pinout, W972GG8JB-18 TR application, or W972GG8JB-18 TR equivalent, this page delivers verified DDR2-1066 timing parameters, ball-mapped I/O roles, OCD/ODT configuration support, and validated drop-in alternatives for memory subsystem design and BOM continuity planning.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing, bi-directional differential DQS strobes edge-aligned on reads and center-aligned on writes, and programmable additive latency (AL = 0–2) enabling RL = AL + CL configurations up to RL = 7.

It supports on-die termination (ODT) controlled via dedicated ODT pin, off-chip driver (OCD) impedance calibration using EMR(1), posted CAS for command bus efficiency, auto-precharge for burst operations, and dual power-down modes (active and precharged) with self-refresh current ≤12 mA at TCASE ≤ 85°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (32M words × 8 banks × 8 bits), enabling 256 MB byte-addressable capacity per device.
Data Rate	1066 Mb/sec/pin (DDR2-1066), requiring 533 MHz clock frequency with tCK(min) = 1.875 ns at CL=7.
CAS Latency	Programmable CL = 3, 4, 5, 6, or 7 - directly impacts read access timing and system timing margining.
Burst Length	Configurable BL = 4 or 8 - determines data transfer size per read/write command and affects bus utilization.
Supply Voltage	VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - mandates tight regulation and separate DQ-domain power routing.
Interface Standard	SSTL_18 - defines voltage thresholds, drive strength, and termination requirements for signal integrity.
Operating Temp	0°C ≤ TCASE ≤ 85°C - qualifies for commercial/industrial ambient environments without derating.
Package	WBGA-60 (11 mm × 11.5 mm, 0.8 mm pitch) - surface-mount footprint compatible with standard DDR2 layout rules.

Pinout & Package

W972GG8JB-18 TR uses a 60-ball WBGA package (11 mm × 11.5 mm, 0.8 mm pitch) with lead-free, RoHS-compliant construction. Ball assignment follows JEDEC-standard DDR2 SDRAM layout with dedicated VDDQ/VSSQ isolation for DQ noise immunity and VDDL/VSSDL separation for DLL stability.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Input	Row/column address bus; A10 controls auto-precharge; all sampled on CLK/CLK crossing.
BA0–BA2	Bank Select	3-bit bank address for selecting one of eight internal banks during ACTIVE/READ/WRITE commands.
DQ0–DQ7	Data I/O	Bi-directional 8-bit data bus; referenced to DQS/DQS edges; requires matched trace length and SSTL_18 termination.
DQS / DQS	Differential Data Strobe	Source-synchronous strobe; edge-aligned with read data, center-aligned with write data; enables DDR timing closure.
CKE	Clock Enable	Asynchronous enable/disable of internal clock circuitry; LOW disables DLL and enters power-down states.
CS, RAS, CAS, WE	Command Inputs	Control bus decoded synchronously on CLK/CLK crossing; define all core DRAM operations (ACT, READ, WRITE, PRE, REF).
ODT	On-Die Termination Control	Active-HIGH signal enabling internal termination resistors on DQ/DQS lines to reduce stub reflections.
DM/RDQS	Data Mask / Read Strobe	DM masks write data on both DQS edges; RDQS mode enabled via EMR(1)[A11] for differential read strobe operation.
CLK / CLK	Differential Clock Input	Primary timing reference; all address/control inputs latched at CLK rising/CLK falling crossing point.
VREF	Input Reference Voltage	Mid-supply reference (VDDQ/2 ±300 mV) for SSTL_18 input threshold setting; must be low-noise and stable.

Key Features

Feature	Design Value
OCD Impedance Calibration	EMR(1)-based off-chip driver tuning enables precise output impedance matching to PCB trace Z₀, reducing signal overshoot/undershoot.
Programmable Additive Latency	AL = 0–2 allows decoupling of command issuance from data availability, improving command bus efficiency in high-bandwidth systems.
Dual Power-Down Modes	Active Power Down (CKE LOW, banks active) and Precharged Power Down (CKE LOW, all banks precharged) reduce IDD to ≤12 mA in idle states.
Auto-Precharge Support	Integrated auto-precharge on burst read/write commands eliminates need for explicit PRE commands, simplifying controller logic and timing.
Self-Refresh with Temperature Compensation	Internal refresh counter maintains data retention without external refresh commands; IDD6 ≤12 mA at TCASE ≤85°C ensures low-power standby.
Write Latency Derivation	WL = RL − 1 ensures deterministic write-to-read turnaround timing, critical for interleaved memory access patterns in real-time systems.

Applications

Industrial PLC Memory Buffer	Network Switch Packet Buffer
Use Scenario: Stores real-time I/O status, ladder logic variables, and firmware overlays in programmable logic controllers operating in factory-floor environments with 0–85°C ambient. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-M7 or RISC-V MCU via 16-bit DDR2 bus; provides 256 MB capacity at 1066 MT/s for deterministic scan-cycle execution. Use Value: DDR2-1066 bandwidth meets >200 MB/s data logging throughput; ODT+OCD support ensures signal integrity across 4-layer PCB backplanes with 50 Ω traces.	Use Scenario: Buffers ingress/egress packet queues in Layer 2/3 Ethernet switches handling 10/100/1000BASE-T traffic with deep buffer requirements. IC Role / Device Role / Timing Role: Shared packet memory accessed by multiple MAC controllers and QoS engines; operates in bank-interleaved mode to sustain concurrent read/write streams. Use Value: 8-bank architecture enables 220 mA IDD7 interleave current for sustained 1.6 Gbps aggregate throughput; auto-precharge reduces controller overhead by 30% vs manual precharge.
Medical Imaging Display Controller	Automotive ADAS Video Preprocessor
Use Scenario: Holds frame buffers and lookup tables for high-resolution diagnostic displays (e.g., ultrasound, MRI) requiring glitch-free video streaming at 60 Hz. IC Role / Device Role / Timing Role: Frame memory for FPGA-based display pipeline; configured with CL=5, BL=8, and posted CAS to minimize latency jitter during pixel fetch bursts. Use Value: DLL-aligned DQS/DQ timing and SSTL_18 compliance ensure <10 ps skew across 8-bit DQ bus, eliminating visible tearing in 1920×1080@60Hz output.	Use Scenario: Stores intermediate frames and feature maps in vision-processing units for lane detection and object classification in automotive camera modules. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for TI TDA4VM or NXP S32G SoC; operates in precharged power-down mode between frame captures to meet ASIL-B power budgets. Use Value: Self-refresh IDD6 ≤12 mA extends battery-backed operation during vehicle sleep mode; -18 speed grade guarantees tRCD/tRP ≤13.125 ns for real-time inference pipeline timing closure.

Industrial PLC Memory Buffer

Network Switch Packet Buffer

Use Scenario: Stores real-time I/O status, ladder logic variables, and firmware overlays in programmable logic controllers operating in factory-floor environments with 0–85°C ambient.

IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-M7 or RISC-V MCU via 16-bit DDR2 bus; provides 256 MB capacity at 1066 MT/s for deterministic scan-cycle execution.

Use Value: DDR2-1066 bandwidth meets >200 MB/s data logging throughput; ODT+OCD support ensures signal integrity across 4-layer PCB backplanes with 50 Ω traces.

Use Scenario: Buffers ingress/egress packet queues in Layer 2/3 Ethernet switches handling 10/100/1000BASE-T traffic with deep buffer requirements.

IC Role / Device Role / Timing Role: Shared packet memory accessed by multiple MAC controllers and QoS engines; operates in bank-interleaved mode to sustain concurrent read/write streams.

Use Value: 8-bank architecture enables 220 mA IDD7 interleave current for sustained 1.6 Gbps aggregate throughput; auto-precharge reduces controller overhead by 30% vs manual precharge.

Medical Imaging Display Controller

Automotive ADAS Video Preprocessor

Use Scenario: Holds frame buffers and lookup tables for high-resolution diagnostic displays (e.g., ultrasound, MRI) requiring glitch-free video streaming at 60 Hz.

IC Role / Device Role / Timing Role: Frame memory for FPGA-based display pipeline; configured with CL=5, BL=8, and posted CAS to minimize latency jitter during pixel fetch bursts.

Use Value: DLL-aligned DQS/DQ timing and SSTL_18 compliance ensure <10 ps skew across 8-bit DQ bus, eliminating visible tearing in 1920×1080@60Hz output.

Use Scenario: Stores intermediate frames and feature maps in vision-processing units for lane detection and object classification in automotive camera modules.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for TI TDA4VM or NXP S32G SoC; operates in precharged power-down mode between frame captures to meet ASIL-B power budgets.

Use Value: Self-refresh IDD6 ≤12 mA extends battery-backed operation during vehicle sleep mode; -18 speed grade guarantees tRCD/tRP ≤13.125 ns for real-time inference pipeline timing closure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H64M8CB-3−AAT:C	64M × 8 organization (512 Mb), DDR2-800 (6-6-6), CL = 4–6, same WBGA-60 package but different ball map (e.g., no RDQS support).	Lower density and bandwidth; suitable for cost-sensitive designs where 256 MB capacity is excessive.	Select when BOM cost reduction outweighs bandwidth/density needs; verify PCB layout compatibility due to non-identical pinout.
IS42S32800J-6BLI	32M × 8 × 4 banks (1 Gb), DDR2-667 (5-5-5), CL = 3–5, 84-ball TSOP-II package - incompatible footprint and lower speed grade.	Targeted at legacy systems with space-constrained TSOP layouts and relaxed timing requirements.	Choose only for direct replacement in existing TSOP-based designs; not pin-compatible with W972GG8JB-18 TR's WBGA-60.

Compared with MT47H64M8CB-3−AAT:C and IS42S32800J-6BLI, the W972GG8JB-18 TR delivers higher density (2 Gb), faster DDR2-1066 performance, and WBGA-60 packaging optimized for high-speed routing - making it the preferred choice for new industrial and networking designs requiring ≥256 MB memory bandwidth.

Availability

W972GG8JB-18 TR is available at Aetrix Electronics and suitable for industrial PLCs, network switches, medical imaging displays, and automotive ADAS systems requiring stable component supply, long-lifecycle support, and guaranteed DDR2-1066 timing compliance.

Supply support for W972GG8JB-18 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W972GG8JB series belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-effective, high-reliability memory subsystems in commercial and extended-temperature embedded applications.

FAQ

What is the maximum data rate supported by the W972GG8JB-18 TR?

The W972GG8JB-18 TR supports DDR2-1066 operation at 533 MHz clock frequency, delivering 1066 Mb/sec/pin. This is confirmed by its -18 speed grade designation and tCK(min) = 1.875 ns at CL=7 per the official datasheet revision A03. The W972GG8JB-18 TR achieves this rate using DLL-aligned DQ/DQS timing and SSTL_18 signaling under 1.8 V ±0.1 V supply conditions.

Does the W972GG8JB-18 TR support differential DQS operation?

Yes, the W972GG8JB-18 TR supports differential DQS/DQS strobes for both read and write operations, as documented in Section 2 (Features) and Ball Description Table. DQS is edge-aligned with read data and center-aligned with write data. Differential mode is enabled via EMR(1)[A10] = 0; when disabled, single-ended DQS operation is used and ball A2 (NU/RDQS) becomes no-connect.

What is the purpose of the ODT pin on the W972GG8JB-18 TR?

The ODT pin on the W972GG8JB-18 TR controls on-die termination resistance on DQ and DQS lines. When driven HIGH, it enables internal termination to improve signal integrity on unterminated or lightly loaded stubs. Its behavior is defined in Section 8.2.4 and Ball Description Table, and timing requirements for ODT activation/deactivation are specified in Sections 11.2–11.5 of the datasheet.

Can the W972GG8JB-18 TR operate in self-refresh mode at 85°C case temperature?

Yes, the W972GG8JB-18 TR guarantees self-refresh operation with IDD6 ≤12 mA at TCASE ≤ 85°C, as stated in Section 4 (KEY PARAMETERS) and Section 10.9 (DC Characteristics). This makes it suitable for fanless industrial enclosures where ambient temperatures reach 85°C and external refresh control is unavailable during low-power states.

How many banks does the W972GG8JB-18 TR have, and why does that matter?

The W972GG8JB-18 TR has 8 internal banks, as explicitly stated in the General Description ("32M × 8 BANKS × 8 BIT") and Block Diagram. This bank count enables true interleaving - allowing one bank to be precharged while another is active - which sustains high bandwidth under mixed read/write workloads and reduces average access latency in real-time systems.

W972GG8JB-18 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 60-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 2Gbit

Memory Organization:: 256M x 8

Memory Interface:: Parallel

Clock Frequency:: 533 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 58.125 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 60-WBGA (11x11.5)

W972GG8JB-18 TR FAQ

1.How can I place an order for W972GG8JB-18 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG8JB-18 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG8JB-18 TR reliable?

The price and inventory of W972GG8JB-18 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG8JB-18 TR is usually 5 days.

3.What payment methods are accepted for W972GG8JB-18 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG8JB-18 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W972GG8JB-18 TR?

W972GG8JB-18 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG8JB-18 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG8JB-18 TR?

For technical support, including W972GG8JB-18 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG8JB-18 TR requirements.

6.How does Aetrix verify that W972GG8JB-18 TR is sourced from the original manufacturer or authorized distributors?

All W972GG8JB-18 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG8JB-18 TR meets industry standards.

7.What is the process for return or replacement of W972GG8JB-18 TR?

All W972GG8JB-18 TR units undergo pre-shipment inspection (PSI). If there is an issue with W972GG8JB-18 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG8JB-18 TR part is unused and in its original packaging.

Return procedure for W972GG8JB-18 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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