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Winbond Electronics Corporation W972GG8JB-25

Part No.:
W972GG8JB-25
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
60-TFBGA
Datasheet:
AetrixW972GG8JB-25.pdf
Description:
IC DRAM 2GBIT PARALLEL 60WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,715

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Product details

Overview

W972GG8JB-25 from Winbond is a 2G-bit DDR2 SDRAM organized as 32M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V ±0.1 V supply, SSTL_18 interface, and support for CAS latencies 3–7. It serves as main memory in embedded computing, industrial controllers, and legacy networking equipment requiring reliable synchronous DRAM with on-die termination and OCD calibration.

For engineers reviewing the W972GG8JB-25 datasheet, W972GG8JB-25 pinout, W972GG8JB-25 application, or W972GG8JB-25 equivalent, key selection considerations include its -25 speed grade timing compliance, WBGA-60 package footprint, ODT and OCD programmability, burst length flexibility (4/8), and industrial-grade thermal compatibility up to 85°C case temperature.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned to read data and center-aligned to write data. Its DLL aligns DQ and DQS transitions to clock edges, enabling stable 400 MHz (200 MHz clock) operation under DDR2-800 timing.

It supports programmable additive latency (AL = 0–2), auto-precharge, self-refresh, and power-down modes (active and precharged). Command decoding uses CS, RAS, CAS, WE, and BA0–BA2, with address A0–A14 selecting rows/columns and A10 controlling auto-precharge - all latched on differential clock crossings.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 2 Gb (32M words × 8 banks × 8 bits); enables 256 MB byte-addressable memory space per device.
Data Rate 800 Mb/s per pin (DDR2-800); requires 200 MHz differential clock with tCK = 2.5–8 ns depending on CL.
CAS Latency Programmable CL = 3, 4, 5, 6, or 7; determines minimum clock cycles between READ command and first valid data output.
Burst Length Configurable BL = 4 or 8; defines number of consecutive data transfers per READ/WRITE command.
Supply Voltage VDD/VDDQ/VDDL = 1.8 V ±0.1 V; mandates tight regulation and separate DQ power domain (VDDQ/VSSQ) for signal integrity.
On-Die Termination ODT pin-controlled termination (Rtt = 75 Ω or 150 Ω); reduces stub reflections on high-speed DQ/DQS buses without external resistors.
OCD Calibration Off-Chip Driver impedance adjustment via EMR(1); matches output driver strength to PCB trace impedance for optimal write eye margin.

Pinout & Package

W972GG8JB-25 is packaged in a 60-ball WBGA (11 mm × 11.5 mm, 0.8 mm pitch), lead-free and RoHS-compliant. Ball layout follows JEDEC-standard DDR2 SDRAM pinout with dedicated VDDQ/VSSQ domains and isolated DLL power (VDDL/VSSDL).

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Input Row/column address bus; A10 controls auto-precharge; all sampled on CLK/CLK crossing.
BA0–BA2 Bank Select Selects one of eight internal banks for ACTIVE/READ/WRITE/PRECHARGE commands.
DQ0–DQ7 Data I/O 8-bit bidirectional data bus; referenced to DQS/DQS; requires matched trace lengths for timing closure.
DQS / DQS Differential Data Strobe Source-synchronous strobe; edge-aligned to read data, center-aligned to write data; enables DDR timing margin.
ODT On-Die Termination Control Active-HIGH signal enabling internal termination resistor (75 Ω or 150 Ω) on DQ/DQS lines during reads/writes.
CS, RAS, CAS, WE Command Inputs Decode all DDR2 commands (e.g., ACTIVATE, READ, WRITE, PRECHARGE, REFRESH); sampled on CLK rising edge.
CLK / CLK Differential Clock Input Primary timing reference; all address/control inputs latched at crossing point; defines maximum 200 MHz base frequency.
CKE Clock Enable Gates internal clocking; LOW disables DLL and enters power-down; HIGH resumes synchronous operation.
DM/RDQS Data Mask / Read Strobe DM masks write data on both DQS edges; RDQS mode enabled via EMR(1)[A11] for differential read strobe function.
VREF Input Reference Voltage Midpoint reference (VDDQ/2 ±300 mV) for all address/control input thresholds; must be decoupled and stable.

Key Features

Feature Design Value
Programmable CAS Latency (CL) CL = 3–7 allows optimization for latency vs. bandwidth trade-offs across different controller designs and system clocks.
Auto-Precharge Support Integrated auto-precharge on burst completion eliminates explicit PRECHARGE command overhead, simplifying memory controller logic.
On-Die Termination (ODT) Configurable Rtt (75 Ω/150 Ω) reduces signal reflections on DQ/DQS lines, enabling robust 400 MT/s operation without external termination.
OCD Impedance Calibration Adjusts DQ driver strength to match PCB impedance, improving write eye height and reducing timing skew across the byte lane.
Self-Refresh Mode IDD6 ≤ 12 mA at TCASE ≤ 85°C enables low-power retention during system idle, critical for fanless industrial systems.

Applications

Industrial PLC Memory Legacy Network Switch Buffer

Use Scenario: Real-time control logic execution in programmable logic controllers with deterministic I/O response.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and process data buffering; operates under DDR2-800 (5-5-5) timing with CL=5 for balanced latency and throughput.

Use Value: Stable 85°C case temperature rating and ODT-enabled signal integrity ensure reliable operation in unventilated control cabinets.

Use Scenario: Packet buffering and forwarding table storage in Layer 2 Ethernet switches using legacy DDR2-based SoCs.

IC Role / Device Role / Timing Role: Shared system memory for switch fabric and management CPU; configured with BL=8 and AL=1 to maximize burst efficiency on sequential packet payloads.

Use Value: Auto-precharge and posted CAS reduce command bus contention, increasing effective bandwidth for multi-port traffic bursts.

Medical Imaging Display Controller Automotive Infotainment Head Unit

Use Scenario: Frame buffer and UI rendering memory in diagnostic ultrasound or X-ray display subsystems.

IC Role / Device Role / Timing Role: High-reliability video memory supporting dual-channel 16-bit interfaces; uses OCD calibration to maintain write margin across temperature drift.

Use Value: WBGA-60 package minimizes board area while VDDQ/VSSQ isolation prevents display noise coupling into analog front-end circuits.

Use Scenario: Application memory for infotainment OS and navigation stack in automotive head units with legacy DDR2 platforms.

IC Role / Device Role / Timing Role: Main memory for ARM9/ARM11-based SoCs; configured with CL=4 and tRCD/tRP = 12.5 ns to meet automotive ECU timing budgets.

Use Value: Self-refresh current ≤12 mA extends backup power hold-up time during ignition cycling, preserving UI state across restarts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT47H64M8CB-25E:H Same density (512M × 8), DDR2-800, but FBGA-60 package with different ball map; no OCD calibration; fixed ODT only. Requires PCB redesign due to incompatible pinout; lacks OCD tuning for marginal layouts. Choose if migrating from Micron platform or when OCD is unnecessary and layout reuse is not required.
IS42S32800J-25BLI 32M × 32-bit (1 Gb) configuration; wider bus; same -25 speed grade and WBGA-90 package; supports CL=4–6 only. Delivers 4× data width per access but demands 32-bit controller interface and larger footprint. Choose when higher bandwidth per cycle is needed and controller supports x32 interface; not drop-in compatible.

Compared with W972GG8JB-25, MT47H64M8CB-25E:H offers identical timing but no OCD tuning, while IS42S32800J-25BLI trades pin compatibility for wider bus width - making W972GG8JB-25 optimal for cost-sensitive, space-constrained x8 DDR2 upgrades where signal integrity tuning is essential.

Availability

W972GG8JB-25 is available at Aetrix Electronics and suitable for industrial automation, legacy networking infrastructure, and medical display systems requiring stable component supply, long-lifecycle support, and verified DDR2-800 interoperability.

Supply support for W972GG8JB-25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and trusted computing solutions, with over 30 years of DRAM design heritage.

The W972GG8JB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, engineered for extended temperature operation, signal integrity robustness, and long-term availability in embedded systems where DDR3/DDR4 migration is impractical.

FAQ

What DDR2 speed grade does W972GG8JB-25 support?

W972GG8JB-25 supports DDR2-800 operation with two timing bin options: 5-5-5 (tRCD/tRP = 12.5 ns) or 6-6-6 (same parameters at relaxed timing). It achieves 400 MHz clock frequency with 800 MT/s data rate, validated across 0°C to 85°C case temperature range. The -25 suffix explicitly denotes this speed grade per Winbond's ordering nomenclature.

Does W972GG8JB-25 support on-die termination (ODT)?

Yes, W972GG8JB-25 supports ODT via the dedicated ODT pin, enabling programmable termination resistance (75 Ω or 150 Ω) on DQ and DQS lines during read/write operations. This feature eliminates need for external termination resistors and improves signal integrity on high-speed DDR2 buses - confirmed in Section 2 (Features) and Section 6 (Ball Description) of the datasheet.

What package type and footprint does W972GG8JB-25 use?

W972GG8JB-25 uses a 60-ball WBGA package measuring 11 mm × 11.5 mm with 0.8 mm pitch, lead-free and RoHS-compliant. Its ball map follows JEDEC-standard DDR2 SDRAM layout, including segregated VDDQ/VSSQ and VDDL/VSSDL domains - detailed in Sections 5 and 12 of the datasheet and verified on Winbond's official product page.

Can W972GG8JB-25 operate with CAS Latency 3?

Yes, W972GG8JB-25 supports CAS Latency 3 at DDR2-800 speed, with minimum tCK = 5 ns (200 MHz clock). This is explicitly listed in Table 4 (KEY PARAMETERS) under "@CL = 3" row, and confirmed in Section 2 (FEATURES) as "CAS Latency: 3, 4, 5, 6 and 7". CL=3 enables lowest read latency for real-time control applications.

Is OCD calibration supported on W972GG8JB-25?

Yes, W972GG8JB-25 supports Off-Chip Driver (OCD) impedance calibration via Extended Mode Register EMR(1), allowing fine-tuning of DQ output driver strength to match PCB trace impedance. This capability is documented in Section 2 (FEATURES), Section 8.2.3, and Figure 1 initialization flow - critical for achieving robust write timing margins in high-density layouts.

W972GG8JB-25 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
60-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR2
Memory Size:
2Gbit
Memory Organization:
256M x 8
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
57.5 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
60-WBGA (11x11.5)

W972GG8JB-25 FAQ

1.How can I place an order for W972GG8JB-25 through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG8JB-25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG8JB-25 reliable?

The price and inventory of W972GG8JB-25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG8JB-25 is usually 5 days.

3.What payment methods are accepted for W972GG8JB-25?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG8JB-25 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W972GG8JB-25?

W972GG8JB-25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG8JB-25 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG8JB-25?

For technical support, including W972GG8JB-25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG8JB-25 requirements.

6.How does Aetrix verify that W972GG8JB-25 is sourced from the original manufacturer or authorized distributors?

All W972GG8JB-25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG8JB-25 meets industry standards.

7.What is the process for return or replacement of W972GG8JB-25?

All W972GG8JB-25 units undergo pre-shipment inspection (PSI). If there is an issue with W972GG8JB-25, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG8JB-25 part is unused and in its original packaging.

Return procedure for W972GG8JB-25:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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