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Winbond Electronics Corporation W972GG8JB25I

Name: W972GG8JB25I
Brand: Winbond Electronics Corporation
SKU: W972GG8JB25I
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W972GG8JB25I

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 60-TFBGA

Datasheet:: W972GG8JB25I.pdf

Description:: IC DRAM 2GBIT PARALLEL 60WBGA

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Product details

Overview

W972GG8JB25I from Winbond Electronics is a 2G-bit DDR2 SDRAM organized as 32M words × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V ±0.1 V supply, CAS latency 3–7, and industrial temperature range (−40°C to +95°C). It supports on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and auto-precharge for embedded control and industrial computing memory subsystems.

For engineers reviewing the W972GG8JB25I datasheet, W972GG8JB25I pinout, W972GG8JB25I application, or W972GG8JB25I equivalent, key selection considerations include its industrial-grade thermal rating, WBGA-60 package compatibility, DDR2-800 timing compliance, and support for differential DQS strobes with DLL-aligned timing in source-synchronous I/O interfaces.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. Its internal DLL aligns DQ and DQS transitions to clock edges, enabling stable high-speed transfers up to 800 Mb/sec/pin.

The device uses SSTL_18 I/O interface logic, supports programmable additive latency (AL = 0–2), and integrates ODT and OCD calibration for signal integrity optimization. Command decoding occurs on every positive CLK edge, while data and DM are sampled on both DQS edges-enabling precise timing control across burst lengths of 4 or 8.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 G-bit (32M × 8 × 8 banks), providing 256 MByte total capacity for mid-range embedded systems.
Data Rate	DDR2-800 (400 MHz clock, 800 MT/s), enabling sustained bandwidth up to 6.4 GB/s across 64-bit bus configurations.
CAS Latency	Programmable CL = 3, 4, 5, 6, or 7 - directly impacts read access latency and system timing margining.
Burst Length	Configurable BL = 4 or 8 - determines number of consecutive data transfers per read/write command.
Supply Voltage	VDD/VDDQ = 1.8 V ±0.1 V - requires tight regulation; mismatch >0.3 V during ramp risks latch-up.
Operating Temp	−40°C ≤ TCASE ≤ +95°C - qualified for extended industrial environments without derating.
Package	WBGA-60 (11 mm × 11.5 mm, 0.8 mm pitch) - surface-mount compatible with standard reflow profiles.

Pinout & Package

W972GG8JB25I is packaged in a 60-ball Wafer-Level Ball Grid Array (WBGA) with 0.8 mm ball pitch, RoHS-compliant lead-free finish, and isolated VSSQ/VDDL/VSSDL grounds for noise suppression.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Input	Row/column address bus; A10 controls auto-precharge; A11/A10 configure RDQS/DQS mode.
BA0–BA2	Bank Select	Selects one of eight internal banks for concurrent activation and interleaved access.
DQ0–DQ7	Data I/O	8-bit bidirectional data bus; matched loading with DQS/DM for signal integrity.
DQS/DQS	Differential Strobe	Source-synchronous strobe; edge-aligned with read data, center-aligned with write data.
CLK/CLK	Differential Clock	Primary timing reference; all commands latched at crossing of CLK rising and CLK falling edges.
CKE	Clock Enable	Controls power-down entry/exit; LOW disables internal clocks and reduces IDD6 to ≤12 mA.
CS, RAS, CAS, WE	Command Inputs	Define active, read, write, precharge, refresh, and mode register operations via truth table decoding.
ODT	On-Die Termination Control	Registered HIGH enables internal termination resistors (RZQ/4, RZQ/2, RZQ) for stub-free point-to-point routing.
DM/RDQS	Data Mask / Read Strobe	DM masks write data on both DQS edges; RDQS enabled only when EMR(1)[A11]=1 and differential mode active.
VREF	Input Reference	Tracks VDDQ/2 ±300 mV; critical for SSTL_18 input threshold stability and timing closure.

Key Features

Feature	Design Value
On-Die Termination (ODT)	Configurable termination (RZQ/4, RZQ/2, RZQ) reduces external resistor count and improves signal integrity on high-speed traces.
Off-Chip Driver (OCD) Calibration	Dynamic impedance matching between DRAM output drivers and PCB trace Z0 minimizes reflections and jitter.
Posted CAS with Additive Latency	AL = 0–2 decouples command bus occupancy from data return, increasing effective bus utilization in burst-heavy workloads.
Auto-Precharge	Automatic bank precharge after burst completes eliminates explicit PRE command overhead and simplifies controller logic.
Self-Refresh Mode	Maintains data retention with IDD6 ≤12 mA at TCASE ≤85°C, enabling low-power suspend states in portable industrial devices.

Applications

Industrial PLC Memory Buffer	Medical Imaging Frame Store
Use Scenario: Real-time motion control in programmable logic controllers requiring deterministic memory access under wide ambient temperature swings. IC Role / Device Role / Timing Role: Primary working memory buffer interfacing with ARM Cortex-M7 or RISC-V MCU via 16-bit DDR2 bus; provides low-latency random access with guaranteed −40°C to +95°C operation. Use Value: Eliminates need for external termination and impedance tuning components, reducing BOM cost and layout complexity while meeting IEC 61000-6-2 EMC immunity requirements.	Use Scenario: High-resolution ultrasound or digital X-ray frame buffering where burst throughput and data coherency are critical during acquisition bursts. IC Role / Device Role / Timing Role: Dual-bank interleaved frame store supporting simultaneous read (display engine) and write (sensor pipeline) with tRC = 57.5 ns minimum. Use Value: Enables seamless 8-beat burst transfers at 800 MT/s with RL=5 (AL=2, CL=3), achieving ≥3.2 GB/s sustained bandwidth without controller-level arbitration stalls.
Telecom Baseband Processing	Ruggedized Edge Gateway Cache
Use Scenario: LTE/5G small cell baseband processing units needing reliable memory for FFT buffers and channel estimation tables in outdoor enclosures. IC Role / Device Role / Timing Role: Coherent DDR2 memory node in multi-chip module with FPGA fabric; supports ODT switching per command to match dynamic line impedance. Use Value: Industrial temp grade ensures no timing derating across −40°C cold start to +95°C solar-heated cabinet conditions, avoiding thermal throttling-induced packet loss.	Use Scenario: Secure IoT gateway deployed in transportation infrastructure with vibration, humidity, and thermal cycling exposure. IC Role / Device Role / Timing Role: Non-volatile cache extension for eMMC storage, using self-refresh and power-down modes to maintain state during brownouts. Use Value: IDD6 ≤12 mA in self-refresh extends backup battery life beyond 72 hours, satisfying EN 50121-3-2 railway safety uptime requirements.

Industrial PLC Memory Buffer

Medical Imaging Frame Store

Use Scenario: Real-time motion control in programmable logic controllers requiring deterministic memory access under wide ambient temperature swings.

IC Role / Device Role / Timing Role: Primary working memory buffer interfacing with ARM Cortex-M7 or RISC-V MCU via 16-bit DDR2 bus; provides low-latency random access with guaranteed −40°C to +95°C operation.

Use Value: Eliminates need for external termination and impedance tuning components, reducing BOM cost and layout complexity while meeting IEC 61000-6-2 EMC immunity requirements.

Use Scenario: High-resolution ultrasound or digital X-ray frame buffering where burst throughput and data coherency are critical during acquisition bursts.

IC Role / Device Role / Timing Role: Dual-bank interleaved frame store supporting simultaneous read (display engine) and write (sensor pipeline) with tRC = 57.5 ns minimum.

Use Value: Enables seamless 8-beat burst transfers at 800 MT/s with RL=5 (AL=2, CL=3), achieving ≥3.2 GB/s sustained bandwidth without controller-level arbitration stalls.

Telecom Baseband Processing

Ruggedized Edge Gateway Cache

Use Scenario: LTE/5G small cell baseband processing units needing reliable memory for FFT buffers and channel estimation tables in outdoor enclosures.

IC Role / Device Role / Timing Role: Coherent DDR2 memory node in multi-chip module with FPGA fabric; supports ODT switching per command to match dynamic line impedance.

Use Value: Industrial temp grade ensures no timing derating across −40°C cold start to +95°C solar-heated cabinet conditions, avoiding thermal throttling-induced packet loss.

Use Scenario: Secure IoT gateway deployed in transportation infrastructure with vibration, humidity, and thermal cycling exposure.

IC Role / Device Role / Timing Role: Non-volatile cache extension for eMMC storage, using self-refresh and power-down modes to maintain state during brownouts.

Use Value: IDD6 ≤12 mA in self-refresh extends backup battery life beyond 72 hours, satisfying EN 50121-3-2 railway safety uptime requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H64M8CB-37E:H	64M × 8 organization (512 Mbit), DDR2-800, −40°C to +95°C, FBGA-60 package; same VDD/VDDQ but higher IDD0 (95 mA vs. 72 mA).	Lower density; suitable where firmware footprint or boot ROM size constraints limit required RAM capacity.	Select when system memory map requires ≤512 Mbit and JEDEC-compliant pinout is mandatory for FPGA reference designs.
IS42S32800J-3BLI	32M × 8 × 4 banks (1 Gbit), DDR2-800, −40°C to +85°C, TSOP-86; lacks OCD calibration and has wider tRCD/tRP (13.5 ns vs. 12.5 ns).	Higher density but narrower temperature range; TSOP packaging limits board-level thermal dissipation in sealed enclosures.	Choose for cost-sensitive consumer-grade industrial gateways where extended temp is not required and PCB space allows TSOP footprint.

Compared with MT47H64M8CB-37E:H and IS42S32800J-3BLI, W972GG8JB25I delivers full 2 G-bit density in WBGA-60 with industrial temp support, OCD calibration, and tighter AC timings - making it optimal for space-constrained, thermally demanding embedded systems requiring long-term component availability.

Availability

W972GG8JB25I is available at Aetrix Electronics and suitable for industrial automation, medical imaging equipment, telecom baseband modules, and ruggedized edge computing platforms requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W972GG8JB25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

W972GG8JB25I belongs to Winbond's DDR2 SDRAM product line, designed specifically for cost-sensitive yet thermally demanding embedded applications requiring JEDEC-compliant DDR2 interoperability and long-lifecycle support.

FAQ

What is the maximum clock frequency supported by W972GG8JB25I?

W972GG8JB25I supports DDR2-800 operation, corresponding to a 400 MHz differential clock frequency and 800 MT/s data transfer rate. Its tCK(min) is 2.5 ns at CL=5/6, validated across −40°C to +95°C case temperature. The device does not support DDR2-1066 speeds; that capability is exclusive to the -18 speed grade variant.

Does W972GG8JB25I require external termination resistors?

No, W972GG8JB25I integrates on-die termination (ODT) with programmable values (RZQ/4, RZQ/2, RZQ) controlled via EMR(1). This eliminates the need for external parallel termination resistors on DQ/DQS lines, simplifying PCB layout and improving signal integrity in point-to-point DDR2 interfaces.

How is the industrial temperature rating of W972GG8JB25I verified?

W972GG8JB25I is characterized and tested across −40°C ≤ TCASE ≤ +95°C per JEDEC JESD22-A104 and JESD22-A108 standards. All AC/DC parameters-including tRCD, tRP, IDD0, and ODT resistance-are guaranteed within spec across this range, with no derating required for timing or power consumption.

Can W972GG8JB25I operate with single-ended DQS instead of differential DQS?

Yes, W972GG8JB25I supports both differential and single-ended DQS modes. Differential mode is enabled by setting EMR(1)[A10] = 0; single-ended mode is selected with EMR(1)[A10] = 1. In single-ended mode, DQS functions as a unidirectional strobe, and ball A2 (NU/RDQS) becomes no-connect.

What is the purpose of the VDDL and VSSDL pins on W972GG8JB25I?

VDDL and VSSDL supply dedicated power and ground to the internal delay-locked loop (DLL) circuitry. Isolating the DLL's supply from core (VDD) and I/O (VDDQ) rails prevents switching noise from degrading DLL lock stability and jitter performance-critical for maintaining tAC and tDQSS timing margins at DDR2-800 speeds.

W972GG8JB25I Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 60-TFBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 2Gbit

Memory Organization:: 256M x 8

Memory Interface:: Parallel

Clock Frequency:: 200 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 57.5 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: -40°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 60-WBGA (11x11.5)

W972GG8JB25I FAQ

1.How can I place an order for W972GG8JB25I through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG8JB25I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG8JB25I reliable?

The price and inventory of W972GG8JB25I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG8JB25I is usually 5 days.

3.What payment methods are accepted for W972GG8JB25I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG8JB25I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W972GG8JB25I?

W972GG8JB25I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG8JB25I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG8JB25I?

For technical support, including W972GG8JB25I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG8JB25I requirements.

6.How does Aetrix verify that W972GG8JB25I is sourced from the original manufacturer or authorized distributors?

All W972GG8JB25I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG8JB25I meets industry standards.

7.What is the process for return or replacement of W972GG8JB25I?

All W972GG8JB25I units undergo pre-shipment inspection (PSI). If there is an issue with W972GG8JB25I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG8JB25I part is unused and in its original packaging.

Return procedure for W972GG8JB25I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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