Winbond Electronics Corporation W972GG8JB25I TR

Overview

W972GG8JB25I TR from Winbond Electronics is a 2G-bit DDR2 SDRAM organized as 32M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6), with 1.8 V ±0.1 V supply, CAS latency 3–7, and industrial temperature range (−40°C to +95°C). It serves as main memory in embedded networking and industrial control systems requiring reliable high-bandwidth data buffering.

For engineers reviewing the W972GG8JB25I TR datasheet, W972GG8JB25I TR pinout, W972GG8JB25I TR application, or W972GG8JB25I TR equivalent, key selection criteria include its industrial-grade thermal rating, on-die termination (ODT), OCD impedance calibration, differential clock interface (CLK/CLK), and SSTL_18 I/O compatibility for stable signal integrity in noise-sensitive environments.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing for precise source-synchronous read/write operations. It supports programmable additive latency (AL = 0–2), burst lengths of 4 or 8, and write latency WL = RL − 1.

Functional operation includes auto-precharge, self-refresh, active/precharged power-down modes, and ODT control via dedicated ODT pin. Mode and extended mode registers configure CAS latency, burst type, OCD calibration, and DLL enable/disable - all accessible without disrupting array contents.

Key Specifications

Pinout & Package

Packaged in a 60-ball WBGA (11 mm × 11.5 mm, 0.8 mm pitch), lead-free and RoHS-compliant, with isolated VSSQ and VSSDL planes for DQ and DLL noise suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H64M8CB-37E:H and IS42S32800J-3BLI, the W972GG8JB25I TR uniquely combines industrial temperature support, integrated ODT, and compact 60-ball WBGA - making it optimal for space-constrained, thermally aggressive embedded systems where signal integrity and qualification breadth are non-negotiable.

Availability

W972GG8JB25I TR is available at Aetrix Electronics and suitable for industrial PLCs, network infrastructure equipment, medical imaging subsystems, and automotive ADAS modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W972GG8JB25I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W972GG8JB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for mission-critical embedded systems requiring guaranteed operation across wide temperature ranges and robust signal integrity features like ODT and OCD calibration.

FAQ

What is the maximum supported CAS latency for W972GG8JB25I TR?

The W972GG8JB25I TR supports programmable CAS latency values of 3, 4, 5, 6, and 7 - configured via the Mode Register during initialization. At DDR2-800 speed (400 MHz clock), CL=5 corresponds to a 12.5 ns delay, while CL=7 extends to 17.5 ns, allowing trade-offs between timing margin and access latency in system-level timing closure.

Does W972GG8JB25I TR support differential DQS operation?

Yes, W972GG8JB25I TR supports differential DQS/DQS operation when enabled via Extended Mode Register 1 (EMR(1)) bit A10 = 0. In this mode, DQS functions as a true differential strobe edge-aligned with read data and center-aligned with write data, improving jitter tolerance and skew margin over single-ended implementations.

How is On-Die Termination (ODT) controlled on W972GG8JB25I TR?

ODT on W972GG8JB25I TR is controlled by a dedicated ODT input pin (Ball F9). When driven HIGH, it enables internal termination resistors (75 Ω or 150 Ω, configurable via EMR(1)) on DQ and DQS lines. ODT must be asserted before read/write bursts begin and deasserted before precharge or refresh to avoid contention.

What is the purpose of the VREF pin on W972GG8JB25I TR?

The VREF pin (Ball E2) provides the reference voltage for all address, command, and control inputs (CS, RAS, CAS, WE, CKE, BA0–BA2, A0–A14). It must be maintained at VDDQ/2 ±300 mV to ensure correct logic level interpretation across voltage and temperature variations - critical for setup/hold time compliance in high-speed DDR2 interfaces.

Can W972GG8JB25I TR operate without OCD calibration?

Yes, W972GG8JB25I TR can operate without OCD calibration by programming EMR(1) with default OCD settings (A9=A8=A7=HIGH), then exiting calibration mode (A9=A8=A7=LOW). However, skipping calibration forfeits optimized output driver impedance matching, potentially increasing signal overshoot and reducing timing margin in high-speed layouts.