Winbond Electronics Corporation W972GG8JB-3 TR
- Part No.:
- W972GG8JB-3 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W972GG8JB-3 TR.pdf
- Description:
- IC DRAM 2GBIT PARALLEL 60WBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W972GG8JB-3 TR from Winbond Electronics is a 2G-bit DDR2 SDRAM organized as 32M × 8 banks × 8 bits, operating at DDR2-667 speed (5-5-5 timing), with 1.8 V ±0.1 V core and I/O supply, SSTL_18 interface, and support for CAS latencies 3–7. It serves as main memory in embedded industrial controllers requiring stable low-power operation under 0°C to 85°C.
For engineers reviewing the W972GG8JB-3 TR datasheet, W972GG8JB-3 TR pinout, W972GG8JB-3 TR application, or W972GG8JB-3 TR equivalent, key selection considerations include its -3 speed grade timing compliance, on-die termination (ODT), OCD impedance calibration, auto-precharge capability, and WBGA-60 package compatibility with legacy DDR2 memory interfaces.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling reliable high-speed signaling up to 333 MHz clock frequency (667 Mb/s/pin).
Functional control includes programmable additive latency (AL = 0–2), write latency = read latency − 1, burst lengths of 4 or 8, and extended mode registers (EMR1–EMR3) configuring ODT, OCD, RDQS enablement, and DLL state. Power management features include active and precharged power-down modes, self-refresh (max 12 mA at ≤85°C), and burst refresh.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 G-bit (32M words × 8 banks × 8 bits), providing 256 MByte total capacity |
| Data Rate | DDR2-667 (333 MHz clock, 667 Mb/s per pin), meeting JEDEC JESD79-2F specification |
| CAS Latency | Programmable CL = 3, 4, 5, 6, or 7; CL=5 required for DDR2-667 (5-5-5) timing bin |
| Burst Length | Configurable BL = 4 or 8, supporting efficient sequential access in cache-line-aligned systems |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V; strict tolerance ensures signal integrity and timing margin compliance |
| Operating Temp | 0°C ≤ TCASE ≤ 85°C, validated for industrial-grade reliability without derating |
| Package | WBGA-60 (11 mm × 11.5 mm, 0.8 mm pitch), RoHS-compliant lead-free construction |
| Interface Standard | SSTL_18 I/O with on-die termination (ODT) and off-chip driver (OCD) impedance adjustment |
Pinout & Package
W972GG8JB-3 TR uses a 60-ball fine-pitch wafer-level ball grid array (WBGA) package measuring 11 mm × 11.5 mm with 0.8 mm ball pitch. The package supports standard DDR2 layout rules including separate VDDQ/VSSQ planes for data I/O noise isolation and dedicated VDDL/VSSDL for DLL circuitry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address bus; A10 controls auto-precharge, A11–A14 used for extended mode register access |
| BA0–BA2 | Bank Select | 3-bit bank address selecting one of eight internal banks for concurrent operation |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; matched loading with DQS/DM for source-synchronous timing |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe; edge-aligned with read data, center-aligned with write data; enabled via EMR(1)[A10]=0 |
| CKE | Clock Enable | Asynchronous enable/disable of internal clock circuitry; LOW disables all operations except self-refresh |
| CS, RAS, CAS, WE | Command Inputs | Control bus decoded with BA and address to generate ACTIVE, READ, WRITE, PRECHARGE, REFRESH, etc. |
| ODT | On-Die Termination Control | Registered HIGH enables internal termination resistor (75 Ω or 150 Ω) on DQ/DQS lines during reads/writes |
| DM/RDQS | Data Mask or Read Strobe | DM masks write data when sampled HIGH on DQS edges; RDQS function enabled only if EMR(1)[A11]=1 |
| CLK / CLK | Differential Clock Inputs | Inputs sampled at crossing points; define all command/address latching and output timing references |
| VREF | Input Reference Voltage | Reference for all address/control inputs; must track VDDQ/2 ±30 mV for valid logic level detection |
| VDD / VDDQ / VDDL | Power Supplies | VDD (core), VDDQ (I/O), VDDL (DLL) each require independent 1.8 V ±0.1 V regulation and local decoupling |
| VSS / VSSQ / VSSDL | GND Planes | Separate ground returns isolate digital core, I/O, and DLL domains to minimize switching noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable 75 Ω or 150 Ω termination on DQ/DQS lines reduces stub reflections and improves signal integrity without external resistors |
| Off-Chip Driver (OCD) Calibration | Dynamic impedance matching between DRAM output drivers and PCB trace impedance via EMR-controlled calibration sequence |
| Posted CAS with Additive Latency | AL = 0–2 allows pipelining of column commands ahead of row activation, improving bus utilization in burst-heavy workloads |
| Auto-Precharge | Automatic bank precharge after burst read/write eliminates explicit PRECHARGE command overhead and simplifies controller logic |
| Self-Refresh Mode | Autonomous refresh at <12 mA current draw maintains data retention during system sleep, enabling low-power standby states |
| Differential Clock & Strobe Interface | CLK/CLK and DQS/DQS differential pairs reject common-mode noise and support robust timing at 333 MHz clock rates |
Applications
| Industrial PLC Memory | Network Router Buffer |
|---|---|
Use Scenario: Non-volatile program storage and real-time data buffering in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM9 or MIPS-based microcontrollers via 8-bit DDR2 bus, operating at 333 MHz with CL=5. Use Value: DDR2-667 timing (5-5-5) ensures deterministic access latency for cyclic scan execution, while ODT and OCD reduce layout sensitivity in electrically noisy industrial enclosures. | Use Scenario: Packet buffering in Layer 3 enterprise routers handling 1 Gbps Ethernet traffic with deep queue requirements. IC Role / Device Role / Timing Role: Shared packet buffer accessed by multiple ASIC engines; configured with BL=8 and AL=1 to maximize throughput across interleaved read/write streams. Use Value: Auto-precharge and posted CAS reduce command overhead by ~25% vs. non-posted configurations, increasing effective bandwidth for burst-intensive forwarding pipelines. |
| Medical Imaging Display Controller | Automotive Infotainment RAM |
Use Scenario: Frame buffer memory for high-resolution diagnostic display subsystems in ultrasound or MRI consoles requiring glitch-free video output. IC Role / Device Role / Timing Role: Dual-port memory mapped to GPU and display engine; operated with tRCD = tRP = 15 ns and tRC = 60 ns to meet strict vertical blanking interval deadlines. Use Value: Differential DQS alignment and SSTL_18 signaling ensure sub-nanosecond jitter margins, preventing visible tearing or color banding in real-time medical visualization. | Use Scenario: Application memory in automotive head units running Linux-based IVI stacks with multi-tasking UI and audio playback. IC Role / Device Role / Timing Role: Main system RAM for ARM Cortex-A series SoC; temperature-rated for 0°C–85°C ambient and qualified for automotive vibration profiles. Use Value: Precharged power-down mode cuts idle current to <50 µA while preserving data, extending battery runtime during ignition-off periods without full memory reload. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H64M8CF-3:H | Same density (512M × 8), same DDR2-667 speed grade, but uses TSOP-66 package instead of WBGA-60 | Requires PCB redesign due to different footprint, pinout, and thermal profile; no VDDL/VSSDL separation | Select when board space permits larger package and legacy TSOP layout reuse is prioritized over miniaturization |
| IS42S16400F-3BL | 16-bit bus width (vs. 8-bit), 1G-bit density (vs. 2G-bit), identical -3 speed grade and WBGA-60 package | Requires controller reconfiguration for 16-bit interface; half the capacity per device necessitates dual-population for equivalent memory map | Select when higher per-pin bandwidth is needed and SoC supports 16-bit DDR2 channels |
Compared with MT47H64M8CF-3:H and IS42S16400F-3BL, W972GG8JB-3 TR offers optimal fit for space-constrained industrial designs needing 2G-bit in WBGA-60, direct SSTL_18 compatibility, and integrated ODT/OCD-without requiring layout changes or bus-width adaptation.
Availability
W972GG8JB-3 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive infotainment systems requiring stable component supply, long-lifecycle support, and guaranteed DDR2-667 timing compliance.
Supply support for W972GG8JB-3 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM products for industrial, communications, and consumer markets.
The W972GG8JB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for applications demanding extended temperature operation, robust signal integrity, and long-term supply stability in mission-critical embedded systems.
FAQ
What is the maximum clock frequency supported by W972GG8JB-3 TR?
W972GG8JB-3 TR supports a maximum clock frequency of 333 MHz, corresponding to DDR2-667 data rate (667 Mb/s per pin). This is defined by its -3 speed grade, requiring tCK(min) = 3.0 ns at CL=5 and meeting JEDEC JESD79-2F 5-5-5 timing bin specifications for tRCD, tRP, and tRC.
Does W972GG8JB-3 TR support on-die termination (ODT)?
Yes, W972GG8JB-3 TR supports programmable on-die termination (ODT) via the ODT pin and extended mode registers. When ODT is asserted HIGH, internal 75 Ω or 150 Ω termination is enabled on DQ and DQS pins during read/write operations, eliminating need for external termination resistors and improving signal integrity in point-to-point or stubbed topologies.
What package type and dimensions does W972GG8JB-3 TR use?
W972GG8JB-3 TR uses a RoHS-compliant, lead-free wafer-level ball grid array (WBGA) package with 60 solder balls arranged in a 11 mm × 11.5 mm body size and 0.8 mm ball pitch. This compact footprint supports high-density PCB layouts typical in industrial and networking equipment where space is constrained.
Can W972GG8JB-3 TR operate in self-refresh mode, and what is its typical current draw?
Yes, W972GG8JB-3 TR supports self-refresh mode to retain data during system sleep. Its typical self-refresh current is ≤12 mA at case temperatures ≤85°C, as specified in the datasheet's IDD6 parameter. This enables low-power standby operation in battery-backed or energy-sensitive embedded applications without data loss.
Is W972GG8JB-3 TR compatible with standard DDR2 controllers?
Yes, W972GG8JB-3 TR is fully compliant with JEDEC DDR2 SDRAM standard JESD79-2F and interoperates with industry-standard DDR2 memory controllers. It supports all mandatory DDR2 features including DLL-aligned timing, SSTL_18 I/O, burst lengths 4/8, CAS latencies 3–7, and command encoding per the DDR2 protocol - ensuring drop-in compatibility in existing DDR2 designs.
W972GG8JB-3 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 60 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-WBGA (11x11.5)
W972GG8JB-3 TR FAQ
1.How can I place an order for W972GG8JB-3 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W972GG8JB-3 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W972GG8JB-3 TR reliable?
The price and inventory of W972GG8JB-3 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG8JB-3 TR is usually 5 days.
3.What payment methods are accepted for W972GG8JB-3 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG8JB-3 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W972GG8JB-3 TR?
W972GG8JB-3 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W972GG8JB-3 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W972GG8JB-3 TR?
For technical support, including W972GG8JB-3 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG8JB-3 TR requirements.
6.How does Aetrix verify that W972GG8JB-3 TR is sourced from the original manufacturer or authorized distributors?
All W972GG8JB-3 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG8JB-3 TR meets industry standards.
7.What is the process for return or replacement of W972GG8JB-3 TR?
All W972GG8JB-3 TR units undergo pre-shipment inspection (PSI). If there is an issue with W972GG8JB-3 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W972GG8JB-3 TR part is unused and in its original packaging.
Return procedure for W972GG8JB-3 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W972GG8JB-3 TR Tags

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