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Winbond Electronics Corporation W972GG8KB-25
- Part No.:
- W972GG8KB-25
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 84-TFBGA
- Datasheet:
-
W972GG8KB-25.pdf
- Description:
- IC DRAM 2GBIT 84-WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,689
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Product details
Overview
W972GG8KB-25 from Winbond is a 2Gb (256M × 8) DDR2 SDRAM organized in 8 banks, supporting DDR2-800 (5-5-5 or 6-6-6) operation at 400 MHz clock frequency with CL=5/6, tRCD=12.5 ns, and tRP=12.5 ns. It delivers 6.4 Gb/s peak bandwidth across its 8-bit data bus and is used as main memory or frame buffer in embedded networking, industrial HMIs, and legacy PC-compatible systems requiring JEDEC-compliant DDR2.
For engineers reviewing the W972GG8KB-25 datasheet, W972GG8KB-25 pinout, W972GG8KB-25 application, or W972GG8KB-25 equivalent, key selection criteria include its SSTL_18 interface compliance, on-die termination (ODT), OCD impedance calibration, DLL-aligned DQS timing, and support for posted CAS (AL=0–2) to optimize command bus efficiency in high-throughput memory controllers.
Technical Context
This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with bi-directional DQS/DQS strobes edge-aligned to read data and center-aligned to write data. Its internal DLL aligns DQ and DQS transitions to the clock crossing point, ensuring precise timing at 400 MHz.
The device supports programmable CAS latency (CL=3–7), burst lengths of 4 or 8, and additive latency (AL=0–2), enabling RL = AL + CL configurations up to RL=9. It integrates ODT and OCD calibration via EMR(1), allowing dynamic termination control and output driver impedance tuning without external resistors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (32M × 8 banks × 8 bits), providing 256 MB total addressable capacity |
| Data Bus Width | 8-bit bidirectional DQ bus, compatible with x8 memory channel configurations |
| Speed Grade | DDR2-800 (5-5-5 or 6-6-6), supporting 400 MHz clock with 800 MT/s per pin |
| CAS Latency (CL) | Programmable CL=3–7; at DDR2-800, CL=5 or CL=6 defines minimum tRCD/tRP timing |
| Supply Voltage | VDD/VDDQ/VDDL = 1.8 V ± 0.1 V, requiring tightly regulated 1.8V rails for stable operation |
| On-Die Termination | ODT enabled via dedicated ODT pin; supports dynamic termination resistance control during reads/writes |
| Interface Standard | SSTL_18 I/O standard with differential CLK/CLK and DQS/DQS, meeting JEDEC JESD79-2F |
| Operating Temperature | 0°C ≤ TCASE ≤ 85°C, validated for commercial-grade industrial applications |
Pinout & Package
Packaged in a 60-ball WBGA (8 mm × 12.5 mm, 0.8 mm pitch), lead-free and RoHS-compliant, with separate VDDQ/VSSQ planes for improved signal integrity on the DQ bus.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address bus; A10 controls auto-precharge; A11/A12/A13/A14 used for extended addressing and mode register setup |
| BA0–BA2 | Bank Select | 3-bit bank address selecting one of eight internal memory banks for concurrent access |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; matched loading with DQS/DM for source-synchronous timing |
| DQS / DQS | Differential Data Strobe | Source-synchronous strobe; edge-aligned to read data, center-aligned to write data; enables DDR timing precision |
| CKE | Clock Enable | Asynchronous enable/disable of internal clock circuitry; controls power-down entry/exit and self-refresh activation |
| CS, RAS, CAS, WE | Command Control | Standard DDR2 command bus; decoded synchronously on CLK/CLK crossings to initiate activate, read, write, precharge, refresh |
| ODT | On-Die Termination Control | Registered HIGH enables internal termination resistors on DQ/DQS lines to reduce stub reflections and improve signal integrity |
| VREF | Input Reference Voltage | Reference for SSTL_18 input thresholds; must be maintained at VDDQ/2 ± 30 mV for reliable command/address sampling |
Key Features
| Feature | Design Value |
|---|---|
| Off-Chip Driver (OCD) Calibration | EMR(1)-based impedance adjustment allows fine-tuning of DQ output drive strength to match PCB trace impedance, reducing overshoot/undershoot |
| Posted CAS with Additive Latency | AL=0–2 reduces command bus contention by decoupling column address transfer from CAS latency, improving sustained bandwidth in burst-heavy workloads |
| Auto-Precharge Support | Embedded precharge command issued automatically after burst read/write, eliminating explicit PRE command overhead and simplifying controller logic |
| DLL-Driven Timing Alignment | Internal delay-locked loop locks DQ/DQS edges to CLK crossings, enabling reliable 400 MHz operation without external phase alignment circuitry |
| Multiple Power-Down Modes | Supports both precharged and active power-down states, plus self-refresh, allowing dynamic power scaling based on memory access patterns |
| Write Data Mask (DM) | Per-byte masking via DM pin sampled on both DQS edges enables partial writes without read-modify-write cycles, critical for efficient cache-line updates |
Applications
| Industrial HMI Memory Buffer | Legacy Network Router Frame Buffer |
|---|---|
Use Scenario: High-reliability human-machine interface panel with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A8/A9-based SoC, buffering display frame buffers and UI assets with burst-8 sequential access patterns. Use Value: DDR2-800 bandwidth meets 1080p@60Hz framebuffer throughput requirements while ODT and OCD ensure signal integrity over 4-layer PCB traces up to 8 cm. |
Use Scenario: Packet forwarding engine in enterprise Layer 3 switch requiring low-latency packet buffering and table lookups. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by multiple traffic management engines via dual-port DDR2 controller. Use Value: Programmable CL=5 and tRCD=12.5 ns enable sub-30 ns read-to-read latency; auto-precharge reduces command overhead during burst-intensive forwarding operations. |
| Medical Imaging Control Unit | Automated Test Equipment (ATE) Data Capture |
Use Scenario: Ultrasound system front-end controller acquiring and preprocessing real-time echo data before FPGA-based beamforming. IC Role / Device Role / Timing Role: High-throughput data capture buffer interfacing directly to ADC interface logic, operating in burst-4 mode with strict tRTP ≤ 2-cycle constraints. Use Value: DLL-aligned DQS ensures deterministic 400 MHz sampling window; VDDQ/VSSQ isolation minimizes switching noise coupling into analog subsystems. |
Use Scenario: High-speed digital pattern generator capturing multi-channel test vectors at 200+ MHz for semiconductor wafer probing. IC Role / Device Role / Timing Role: Deep capture memory staging raw test results prior to compression and upload; operates in self-refresh during idle periods to minimize standby power. Use Value: Self-refresh current IDD6 ≤ 10 mA enables >72-hour battery-backed retention; ODT programmability adapts termination to varying probe load conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR2 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT47H64M8CB-37E:A (Micron) | Same 512M × 8 density, DDR2-800, but uses 84-ball FBGA; CL=5/6, tRCD/tRP=12.5 ns; requires different layout and thermal pad design | Targeted at telecom baseband cards with higher thermal dissipation needs; lacks OCD calibration support | Select when board redesign accommodates larger package and higher thermal mass is acceptable |
| IS42S16160B-6TL (ISSI) | 16-bit bus (x16), 256M × 16 organization; same DDR2-800 speed grade and CL=5/6, but no EMR(3) support and fixed ODT values | Used in cost-sensitive consumer electronics where x16 bus reduces chip count; not pin-compatible due to doubled data width and ball count | Select only if controller supports x16 interface and layout allows 84-ball TFBGA; verify ODT configuration limits against system signal integrity targets |
Compared with MT47H64M8CB-37E:A and IS42S16160B-6TL, the W972GG8KB-25 offers unique OCD calibration and full EMR(3) support for advanced signal integrity tuning, while maintaining x8 bus compatibility and 60-ball WBGA footprint ideal for space-constrained industrial designs.
Availability
W972GG8KB-25 is available at Aetrix Electronics and suitable for industrial HMIs, legacy network infrastructure, medical imaging control units, and automated test equipment requiring stable component supply across extended product lifecycles.
Supply support for W972GG8KB-25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash storage, and microcontrollers, with over 30 years of DRAM design heritage.
The W972GG8KB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, engineered for long-lifecycle deployment in temperature-stressed environments where JEDEC compliance, signal integrity, and power predictability are critical.
FAQ
What is the maximum supported CAS latency for W972GG8KB-25 in DDR2-800 mode?
The W972GG8KB-25 supports programmable CAS latency from CL=3 through CL=7. In DDR2-800 mode, CL=5 and CL=6 are the primary JEDEC-compliant settings, with tRCD and tRP both specified at 12.5 ns for CL=5 and 12.5 ns for CL=6. CL=7 is supported but requires relaxed timing margins and is typically used for margin testing or specific controller compatibility.
Does W972GG8KB-25 support differential DQS operation, and how is it enabled?
Yes, W972GG8KB-25 supports differential DQS operation using DQS/DQS pins. It is enabled by setting EMR(1)[A10] = 0 during Extended Mode Register Set. When enabled, DQS functions as a true differential strobe aligned to read data edges and write data centers. If disabled (EMR(1)[A10] = 1), DQS operates in single-ended mode and ball A2 becomes NU/RDQS.
What is the purpose of the ODT pin on W972GG8KB-25, and how does it interact with EMR settings?
The ODT pin on W972GG8KB-25 is a dedicated control input that enables or disables on-die termination resistors on DQ and DQS lines. When ODT is registered HIGH, termination is active; when LOW, termination is disabled. EMR(1) sets the resistance value (RZQ/4, RZQ/5, RZQ/6, or RZQ/7), but actual activation depends solely on the ODT pin state - EMR configures value, ODT pin enables/disables.
Can W972GG8KB-25 operate at temperatures below 0°C or above 85°C?
No. The W972GG8KB-25 is rated for 0°C ≤ TCASE ≤ 85°C only. While the -25I variant supports -40°C to 95°C, the -25 suffix explicitly denotes commercial temperature grade. Operation outside this range violates JEDEC specifications and may result in timing violations, increased refresh failure rates, or data retention loss - even if functional at room temperature.
How does the OCD calibration feature in W972GG8KB-25 improve signal integrity?
OCD calibration in W972GG8KB-25 adjusts the output driver impedance of DQ pins to match the target PCB trace impedance (typically 50 Ω). By executing OCD calibration during initialization (per Figure 1 flow), the device measures external reference resistor RZQ and tunes drive strength to minimize reflection-induced jitter and eye closure - directly improving setup/hold margins at 400 MHz without requiring external termination resistors.
W972GG8KB-25 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 84-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR2
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- -
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 57.5 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 84-WBGA (8x12.5)
W972GG8KB-25 FAQ
1.How can I place an order for W972GG8KB-25 through Aetrix?
Please submit a Request for Quotation (RFQ) for W972GG8KB-25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W972GG8KB-25 reliable?
The price and inventory of W972GG8KB-25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG8KB-25 is usually 5 days.
3.What payment methods are accepted for W972GG8KB-25?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG8KB-25 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W972GG8KB-25?
W972GG8KB-25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W972GG8KB-25 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W972GG8KB-25?
For technical support, including W972GG8KB-25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG8KB-25 requirements.
6.How does Aetrix verify that W972GG8KB-25 is sourced from the original manufacturer or authorized distributors?
All W972GG8KB-25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG8KB-25 meets industry standards.
7.What is the process for return or replacement of W972GG8KB-25?
All W972GG8KB-25 units undergo pre-shipment inspection (PSI). If there is an issue with W972GG8KB-25, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W972GG8KB-25 part is unused and in its original packaging.
Return procedure for W972GG8KB-25:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W972GG8KB-25 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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