Winbond Electronics Corporation W972GG8KB25I

Overview

W972GG8KB25I from Winbond is a 2G-bit DDR2 SDRAM organized as 32M × 8 banks × 8 bits, operating at DDR2-800 speed (5-5-5 or 6-6-6 timing), with 1.8 V ±0.1 V supply, industrial temperature range (−40°C to +95°C), and on-die termination (ODT) for signal integrity in embedded memory subsystems.

For engineers reviewing the W972GG8KB25I datasheet, W972GG8KB25I pinout, W972GG8KB25I application, or W972GG8KB25I equivalent, key selection considerations include its industrial-grade thermal rating, SSTL_18 interface compliance, programmable CAS latency (CL = 3–6), auto-precharge support, and WBGA-60 ball package with differential clock and DQS inputs.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write data strobes. It supports posted CAS (AL = 0–2), enabling command bus efficiency via additive latency (RL = AL + CL).

Functional operation includes programmable ODT impedance control via EMR(1), OCD calibration for output driver matching, and multiple power management modes - precharged/active power down, self-refresh (IDD6 ≤ 10 mA), and burst refresh (IDD5B ≤ 145 mA). All commands are decoded synchronously on the rising edge of CLK relative to CLK.

Key Specifications

Pinout & Package

W972GG8KB25I uses a lead-free, RoHS-compliant WBGA-60 package (8 mm × 12.5 mm), with ball pitch of 0.8 mm and die-down construction optimized for low-inductance memory routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H64M8CB-37E:H and IS42S16400F-6BL, W972GG8KB25I delivers optimal balance of industrial reliability, 8-bit bus compatibility, and DDR2-800 performance in the compact WBGA-60 form factor - critical for space-constrained embedded systems requiring long-term supply stability.

Availability

W972GG8KB25I is available at Aetrix Electronics and suitable for industrial HMIs, network packet buffers, medical imaging subsystems, and automotive ADAS video preprocessors requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W972GG8KB25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash storage, and trusted computing solutions since 1987.

The W972GG8KB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for embedded systems demanding robust thermal performance, JEDEC-compliant signal integrity, and long-lifecycle availability in harsh environments.

FAQ

What is the maximum supported CAS latency for W972GG8KB25I?

W972GG8KB25I supports programmable CAS latency values of CL = 3, 4, 5, or 6, as defined in its mode register. The selected CL directly impacts tRCD and tRP timing - for example, at CL = 6, tRCD min is 12.5 ns under DDR2-800 conditions. This flexibility allows system designers to optimize between latency and bandwidth based on controller capabilities and application timing budgets.

Does W972GG8KB25I support differential DQS operation?

Yes, W972GG8KB25I supports differential DQS/DQS operation when enabled via EMR(1)[A10] = 0. In this mode, DQS functions as a true differential strobe aligned with read data (edge-aligned) and write data (center-aligned), improving jitter tolerance and timing margin. Ball A2 (NU/RDQS) becomes RDQS in differential mode, and DM functionality is disabled per JEDEC DDR2 specification.

How does the ODT function operate on W972GG8KB25I?

W972GG8KB25I implements programmable on-die termination controlled by the ODT pin and extended mode registers. When ODT is asserted HIGH, internal parallel termination (75 Ω or 150 Ω) is enabled on DQ and DQS lines during read or write operations. This eliminates need for external termination resistors and reduces stub reflections - especially critical at DDR2-800 speeds on dense PCB layouts.

What is the refresh requirement for W972GG8KB25I at 95°C case temperature?

At TCASE = 85–95°C, W972GG8KB25I requires tREFI = 3.9 µS (i.e., double the standard 7.8 µS interval), achieved by issuing Auto Refresh commands every 32 ms. This is mandated by JEDEC and enabled by setting A7 = "1" in EMR(2). Failure to double refresh frequency above 85°C risks data retention failure due to increased leakage current.

Can W972GG8KB25I be used in place of W972GG8KB-25?

Yes, W972GG8KB25I is functionally identical to W972GG8KB-25 in electrical and timing specifications (DDR2-800, 5-5-5/6-6-6), but adds guaranteed operation from −40°C to +95°C. Both share the same WBGA-60 package, pinout, and initialization sequence. The "I" suffix denotes industrial qualification - no design changes are needed when upgrading from -25 to 25I for enhanced thermal robustness.