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Winbond Electronics Corporation W972GG8KB-25 TR

Name: W972GG8KB-25 TR
Brand: Winbond Electronics Corporation
SKU: W972GG8KB-25 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W972GG8KB-25 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 84-TFBGA

Datasheet:: W972GG8KB-25 TR.pdf

Description:: IC DRAM 2GBIT 84-WBGA

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Product details

Overview

W972GG8KB-25 TR from Winbond is a 2G-bit (256M x 8) DDR2 SDRAM organized as 32M words × 8 banks × 8 bits, compliant with JEDEC DDR2-800 (5-5-5 or 6-6-6) timing, operating at 1.8 V ± 0.1 V supply, and supporting CAS Latency 3–7, burst lengths 4/8, and on-die termination (ODT) for high-speed memory subsystems in industrial embedded controllers and networking equipment.

For engineers reviewing the W972GG8KB-25 TR datasheet, W972GG8KB-25 TR pinout, W972GG8KB-25 TR application, or W972GG8KB-25 TR equivalent, this page delivers verified DDR2-800 timing parameters, ball-mapped I/O roles, OCD/ODT configuration details, and JEDEC-compliant initialization sequences required for stable memory interface design and layout validation.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing, source-synchronous read/write strobes, and programmable additive latency (AL = 0–2) enabling RL = AL + CL. It supports posted CAS, auto-precharge, and seamless burst interrupt modes across all supported speed grades.

The device integrates eight independent banks, SSTL_18 I/O interface, bi-directional DQS/DQS differential strobes, DM-based write masking, and dual-voltage domains (VDD/VDDQ/VDDL) with isolated VSSQ/VSSDL grounds to minimize switching noise. ODT and OCD impedance control are register-configurable via EMR(1) and EMR(2).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (256M × 8), 32M words × 8 banks × 8 bits - defines usable data width and row/column addressing space.
Speed Grade	DDR2-800 (5-5-5 or 6-6-6) - sets tCK min = 2.5 ns, tRCD/tRP min = 12.5 ns, enabling 400 MHz clock operation.
Supply Voltage	VDD/VDDQ/VDDL = 1.8 V ± 0.1 V - mandates tight regulation and decoupling for signal integrity and timing compliance.
CAS Latency	CL = 3, 4, 5, 6, or 7 - directly determines read access latency; CL=5 yields RL=5 when AL=0, critical for controller timing budgeting.
Burst Length	BL = 4 or 8 - defines number of consecutive data transfers per read/write command; BL=8 required for full cache-line fetches.
On-Die Termination	Programmable ODT (via EMR(1)) - enables dynamic termination on DQ/DQS lines without external resistors, reducing stub reflections.
Off-Chip Driver Impedance	OCD calibration via EMR(1) - adjusts output driver strength to match PCB trace impedance (e.g., 40 Ω or 60 Ω), minimizing overshoot/undershoot.
Refresh Interval	tREFI = 7.8 μs (0°C–85°C), 3.9 μs (85°C–95°C) - dictates refresh command frequency; doubled rate required above 85°C case temperature.

Pinout & Package

Packaged in RoHS-compliant, lead-free WBGA-60 (8 mm × 12.5 mm, 0.8 mm pitch) with 60-ball array arranged in 8×12.5 mm² footprint and thermal pad-less construction optimized for industrial PCB assembly.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Input	Row address (A0–A14) and column address (A0–A9); A10 controls auto-precharge - defines bank activation and column access granularity.
BA0–BA2	Bank Select	Selects one of eight internal banks for ACTIVE/READ/WRITE/PRECHARGE - enables interleaved access to hide latency.
DQ0–DQ7	Data I/O	Bi-directional 8-bit data bus - carries read data on DQS edge-aligned transitions and write data on DQS center-aligned sampling.
DQS / DQS	Differential Data Strobe	Source-synchronous strobe pair; DQS edge-aligned with read data, center-aligned with write data - enables precise timing capture at controller.
CS, RAS, CAS, WE	Command Inputs	Define command opcode (e.g., ACTIVE, READ, WRITE, PRECHARGE) on every rising CLK edge - form synchronous command bus.
ODT	On-Die Termination Control	Active-HIGH signal enabling internal termination resistance on DQ/DQS - eliminates need for external parallel termination resistors.
CLK / CLK	Differential Clock Input	Samples all address/control inputs at crossing of CLK rising and CLK falling edges - provides jitter immunity and deterministic setup/hold.
CKE	Clock Enable	Gates internal clock circuitry; LOW disables DLL and enters power-down - primary control for low-power state entry/exit.
DM / RDQS	Data Mask / Read Strobe	DM masks write data on both DQS edges; RDQS enabled via EMR(1)[A11] - supports byte-level write masking and optional differential read strobe.
VDD / VDDQ / VDDL	Power Supplies	VDD (core), VDDQ (I/O), VDDL (DLL) each at 1.8 V ± 0.1 V - requires separate filtering and sequencing per JEDEC DDR2 spec.
VSS / VSSQ / VSSDL	Ground Returns	Isolated ground planes (VSS core, VSSQ I/O, VSSDL DLL) - suppresses crosstalk between logic, I/O, and analog DLL domains.
VREF	Input Reference Voltage	Tracks VDDQ/2 ± 300 mV - sets threshold for SSTL_18 input receivers; must be stable before CKE assertion.

Key Features

Feature	Design Value
JEDEC DDR2-800 Compliance	Fully conforms to JEDEC JESD79-2F specification for 400 MHz clock (200 MHz DDR), including tRCD/tRP = 12.5 ns and tRC = 57.5 ns - ensures interoperability with standard DDR2 controllers.
Programmable On-Die Termination (ODT)	Configurable pull-up/pull-down termination on DQ/DQS pins via EMR(1) - eliminates board-level termination components and improves signal integrity in point-to-point and multi-drop topologies.
Off-Chip Driver (OCD) Calibration	Self-calibrating output driver impedance adjustment using VDDQ reference - matches PCB trace Z₀ (e.g., 50 Ω) to reduce reflection-induced jitter and eye closure.
Posted CAS with Additive Latency	AL = 0–2 programmable via EMR(1), enabling RL = AL + CL - decouples command issuance from data availability, increasing command bus efficiency by up to 30% in burst-heavy workloads.
Auto-Precharge & Burst Interrupt	Hardware-triggered precharge after burst completion (auto-precharge) and mid-burst termination (burst interrupt) - reduces manual command overhead and enables low-latency response to real-time events.
Industrial Temperature Support (-25I variant)	Extended -40°C to +95°C operation with doubled refresh rate and EMR(2)-enabled self-refresh - validated for deployment in base station radios, railway signaling, and outdoor edge gateways.

Applications

Networking Switch ASIC Buffer	Industrial PLC Main Memory
Use Scenario: High-throughput packet buffering in Layer 2/3 Ethernet switches with 10/25/100 GbE interfaces requiring low-latency, burst-capable memory for frame queuing and lookup tables. IC Role / Device Role / Timing Role: Primary DDR2 buffer interfacing directly to switch fabric controller; operates at DDR2-800 with CL=5, BL=8, and ODT enabled for clean 400 MHz signaling. Use Value: 256M × 8 density supports ≥128 KB packet buffers per port; OCD calibration ensures <5% timing margin loss over temperature, maintaining line-rate forwarding.	Use Scenario: Real-time deterministic execution environment in modular programmable logic controllers handling motion control, safety I/O, and HMI rendering simultaneously. IC Role / Device Role / Timing Role: System main memory for ARM Cortex-A9/A15 or PowerPC e5500-based CPU modules; configured with CL=4, tRCD=12.5 ns, and auto-refresh at 7.8 μs intervals. Use Value: Dual-voltage domain isolation (VSSQ/VSSDL) suppresses switching noise during analog I/O sampling; industrial-grade variants support continuous operation at 85°C ambient without derating.
Medical Imaging Front-End Controller	Video Surveillance DVR Buffer
Use Scenario: Image acquisition pipeline in ultrasound or digital X-ray systems where raw sensor data (12–16 bit, 50–100 MSPS) must be buffered before compression and display. IC Role / Device Role / Timing Role: High-bandwidth frame buffer connected to FPGA-based image processor; uses BL=8, posted CAS AL=1, and DQS center-aligned write strobes for reliable burst writes. Use Value: DDR2-800 bandwidth (1.6 GB/s peak) sustains >800 MB/s sustained write throughput; ODT+OCD co-optimization maintains <0.3 UI jitter on DQ lines under full load.	Use Scenario: Multi-channel HD video recording in network-attached DVR/NVR units processing 4–16 simultaneous 1080p30 streams with motion detection and analytics offload. IC Role / Device Role / Timing Role: Shared system memory for SoC video encoder, AI inference accelerator, and network stack; configured with CL=5, tREFI=7.8 μs, and self-refresh for standby power reduction. Use Value: 2G-bit density accommodates 4+ seconds of uncompressed 1080p video per channel; self-refresh current ≤10 mA enables <50 mW idle power per memory channel.

Networking Switch ASIC Buffer

Industrial PLC Main Memory

Use Scenario: High-throughput packet buffering in Layer 2/3 Ethernet switches with 10/25/100 GbE interfaces requiring low-latency, burst-capable memory for frame queuing and lookup tables.

IC Role / Device Role / Timing Role: Primary DDR2 buffer interfacing directly to switch fabric controller; operates at DDR2-800 with CL=5, BL=8, and ODT enabled for clean 400 MHz signaling.

Use Value: 256M × 8 density supports ≥128 KB packet buffers per port; OCD calibration ensures <5% timing margin loss over temperature, maintaining line-rate forwarding.

Use Scenario: Real-time deterministic execution environment in modular programmable logic controllers handling motion control, safety I/O, and HMI rendering simultaneously.

IC Role / Device Role / Timing Role: System main memory for ARM Cortex-A9/A15 or PowerPC e5500-based CPU modules; configured with CL=4, tRCD=12.5 ns, and auto-refresh at 7.8 μs intervals.

Use Value: Dual-voltage domain isolation (VSSQ/VSSDL) suppresses switching noise during analog I/O sampling; industrial-grade variants support continuous operation at 85°C ambient without derating.

Medical Imaging Front-End Controller

Video Surveillance DVR Buffer

Use Scenario: Image acquisition pipeline in ultrasound or digital X-ray systems where raw sensor data (12–16 bit, 50–100 MSPS) must be buffered before compression and display.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer connected to FPGA-based image processor; uses BL=8, posted CAS AL=1, and DQS center-aligned write strobes for reliable burst writes.

Use Value: DDR2-800 bandwidth (1.6 GB/s peak) sustains >800 MB/s sustained write throughput; ODT+OCD co-optimization maintains <0.3 UI jitter on DQ lines under full load.

Use Scenario: Multi-channel HD video recording in network-attached DVR/NVR units processing 4–16 simultaneous 1080p30 streams with motion detection and analytics offload.

IC Role / Device Role / Timing Role: Shared system memory for SoC video encoder, AI inference accelerator, and network stack; configured with CL=5, tREFI=7.8 μs, and self-refresh for standby power reduction.

Use Value: 2G-bit density accommodates 4+ seconds of uncompressed 1080p video per channel; self-refresh current ≤10 mA enables <50 mW idle power per memory channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H64M8CB-25E:H	64M × 8 organization (512 Mbit), same DDR2-800 speed grade, but smaller density and different ballout (FBGA-60 vs WBGA-60); no OCD calibration support.	Lower capacity suits cost-sensitive consumer electronics; lacks OCD/ODT fine-tuning needed for high-noise industrial backplanes.	Select when memory footprint and BOM cost outweigh signal integrity requirements and density needs are ≤512 Mbit.
IS42S16160B-6TL	16M × 16 organization (256 Mbit), DDR2-667 (tCK min = 3.75 ns), CL=3–5 only, no EMR(3) support, and no differential DQS mode.	Targeted at legacy low-bandwidth designs; incompatible with DDR2-800 timing and missing key features like posted CAS and OCD.	Choose only for backward compatibility in existing DDR2-667 platforms where upgrade path to DDR2-800 is blocked by controller limitations.

Compared with MT47H64M8CB-25E:H and IS42S16160B-6TL, the W972GG8KB-25 TR delivers 4× higher density than the Micron part and 2× higher bandwidth than the ISSI part, while providing OCD/ODT configurability essential for robust operation in electrically noisy industrial and telecom environments.

Availability

W972GG8KB-25 TR is available at Aetrix Electronics and suitable for industrial PLCs, networking switches, medical imaging front-ends, and video surveillance DVRs requiring stable component supply, long-lifecycle support, and guaranteed DDR2-800 timing compliance.

Supply support for W972GG8KB-25 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM, with ISO 9001-certified manufacturing and global distribution.

The W972GG8KB series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for extended-temperature, high-reliability applications in networking, automation, and medical equipment where JEDEC compliance and signal integrity are non-negotiable.

FAQ

What is the maximum clock frequency supported by the W972GG8KB-25 TR?

The W972GG8KB-25 TR supports DDR2-800 operation with a maximum clock frequency of 400 MHz (200 MHz fundamental), corresponding to a minimum clock period (tCK) of 2.5 ns for CL=5/6 configurations. This is validated per JEDEC JESD79-2F and confirmed in the device's AC characteristics table for the -25 speed grade.

Does the W972GG8KB-25 TR support differential DQS operation?

Yes, the W972GG8KB-25 TR supports differential DQS/DQS operation when enabled via EMR(1)[A10] = 0. In this mode, balls B7 and A8 function as complementary DQS signals, providing improved noise immunity and timing margin for high-speed write operations - a feature explicitly documented in the Ball Description section.

How is On-Die Termination (ODT) configured on the W972GG8KB-25 TR?

ODT is controlled by the ODT pin (ball F9) and configured through Extended Mode Register 1 (EMR(1)). When ODT is asserted HIGH, internal termination resistors (typically 75 Ω or 150 Ω depending on EMR setting) are enabled on DQ/DQS lines. The exact value is set via EMR(1) bits A1–A0, as defined in the Functional Description section.

What is the purpose of the VSSQ and VSSDL pins on the W972GG8KB-25 TR?

VSSQ (DQ ground) and VSSDL (DLL ground) are isolated ground returns dedicated to the I/O and DLL circuits respectively. This separation prevents switching noise from the DQ bus from modulating the DLL's phase-locked loop, ensuring stable DQ–DQS alignment across temperature and voltage - a requirement explicitly called out in the Electrical Characteristics section.

Can the W972GG8KB-25 TR operate at 95°C case temperature?

The W972GG8KB-25 TR is rated for 0°C ≤ TCASE ≤ 85°C. For operation up to 95°C, the industrial-grade W972GG8KB-25I variant must be used; it supports 95°C via doubled refresh rate (tREFI = 3.9 μs) and EMR(2)-enabled self-refresh, as specified in Note 4 of the KEY PARAMETERS table.

W972GG8KB-25 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 84-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 2Gbit

Memory Organization:: 256M x 8

Memory Interface:: -

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 57.5 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 84-WBGA (8x12.5)

W972GG8KB-25 TR FAQ

1.How can I place an order for W972GG8KB-25 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG8KB-25 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG8KB-25 TR reliable?

The price and inventory of W972GG8KB-25 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG8KB-25 TR is usually 5 days.

3.What payment methods are accepted for W972GG8KB-25 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG8KB-25 TR transactions.

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4.How is shipping managed for W972GG8KB-25 TR?

W972GG8KB-25 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG8KB-25 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG8KB-25 TR?

For technical support, including W972GG8KB-25 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG8KB-25 TR requirements.

6.How does Aetrix verify that W972GG8KB-25 TR is sourced from the original manufacturer or authorized distributors?

All W972GG8KB-25 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG8KB-25 TR meets industry standards.

7.What is the process for return or replacement of W972GG8KB-25 TR?

All W972GG8KB-25 TR units undergo pre-shipment inspection (PSI). If there is an issue with W972GG8KB-25 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG8KB-25 TR part is unused and in its original packaging.

Return procedure for W972GG8KB-25 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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