Winbond Electronics Corporation W972GG8KS-18

Overview

W972GG8KS-18 from Winbond is a 2G-bit (256M x 8) DDR2 SDRAM organized as 32M words × 8 banks × 8 bits, compliant with JEDEC DDR2-1066 (7-7-7) timing, operating at 1.8 V ± 0.1 V supply, supporting CAS Latency 3–7 and burst lengths of 4 or 8, deployed in embedded control, industrial HMIs, and legacy networking equipment requiring high-density, low-power synchronous DRAM.

For engineers reviewing the W972GG8KS-18 datasheet, W972GG8KS-18 pinout, W972GG8KS-18 application, or W972GG8KS-18 equivalent, this page delivers verified DDR2-1066 timing parameters, ball-level I/O mapping, OCD/ODT configuration support, and JEDEC-compliant initialization sequence details critical for memory controller bring-up and signal integrity validation.

Technical Context

This DDR2 SDRAM uses differential clock inputs (CLK/CLK) with input sampling at clock crossings, DLL-aligned DQ/DQS timing, and source-synchronous data strobes (DQS/DQS) edge-aligned on reads and center-aligned on writes. It implements programmable additive latency (AL = 0–2), enabling RL = AL + CL for optimized command bus efficiency.

The device supports on-die termination (ODT) controlled via dedicated ODT pin and off-chip driver (OCD) impedance calibration using EMR(1), plus auto-precharge, self-refresh, and precharged power-down modes. All control/address signals use SSTL_18 interface standard with VREF-referenced inputs.

Key Specifications

Pinout & Package

W972GG8KS-18 is packaged in a lead-free, RoHS-compliant 60-ball WBGA (8 mm × 9.5 mm, 0.8 mm pitch), with separate VDDQ/VSSQ planes for I/O noise isolation and dedicated VDDL/VSSDL for DLL power integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Compared with MT47H64M8CB-37E:H and IS42S32800J-6BL, the W972GG8KS-18 uniquely combines x8 bus width, WBGA-60 footprint, DDR2-1066 timing, and OCD calibration-making it optimal for space-constrained, signal-integrity-sensitive industrial designs where layout reuse and margin control are critical.

Availability

W972GG8KS-18 is available at Aetrix Electronics and suitable for industrial HMIs, legacy networking equipment, medical diagnostic devices, and automotive infotainment gateways requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR2-1066 performance.

Supply support for W972GG8KS-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM, with ISO 9001-certified manufacturing and global distribution.

The W972GG8KS-18 belongs to Winbond's DDR2 SDRAM product line, engineered for cost-sensitive, high-reliability industrial and networking applications where JEDEC compliance, thermal robustness, and long-term supply stability are mandatory.

FAQ

What is the maximum clock frequency supported by the W972GG8KS-18?

The W972GG8KS-18 supports DDR2-1066 operation with a minimum clock period (tCK) of 1.875 ns, corresponding to a 533 MHz differential clock frequency. This is validated under JEDEC conditions with CL=7, tRCD=7, and tRP=7 timing-ensuring full-speed operation in compliant systems without derating.

Does the W972GG8KS-18 require external termination resistors?

No-the W972GG8KS-18 integrates on-die termination (ODT) controlled via the dedicated ODT pin, supporting 75 Ω or 150 Ω termination values. This eliminates the need for external parallel resistors on DQ/DQS lines, reducing BOM count and improving signal integrity at 533 MHz operation.

How is the W972GG8KS-18 initialized after power-up?

The W972GG8KS-18 requires a strict 13-step JEDEC initialization sequence: stable power and clock for 200 µs, CKE assertion, precharge-all, EMRS to EMR(2)/EMR(3), DLL enable/reset, MRS programming, OCD calibration, and ≥2 auto-refresh commands before normal operation-detailed in Section 8.1 of the datasheet.

Can the W972GG8KS-18 operate in self-refresh mode at 85°C?

Yes-the W972GG8KS-18 guarantees self-refresh current (IDD6) ≤ 10 mA at TCASE ≤ 85°C, enabling reliable data retention during extended system sleep. At 85°C, tREFI remains 7.8 µs, requiring the memory controller to maintain standard refresh timing without acceleration.

What is the purpose of the DM/RDQS pin on the W972GG8KS-18?

The DM/RDQS pin serves dual functions: as DM (Data Mask) during write operations to enable byte-level masking, and as RDQS (Read Data Strobe) when enabled via EMR(1). Its loading matches DQ/DQS, ensuring timing consistency-critical for partial writes and differential read strobe support.