Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W972GG8KS-18 TR

Name: W972GG8KS-18 TR
Brand: Winbond Electronics Corporation
SKU: W972GG8KS-18 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: W972GG8KS-18 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 60-TFBGA

Datasheet:: W972GG8KS-18 TR.pdf

Description:: IC DRAM 2GBIT 60-WBGA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,441

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

W972GG8KS-18 TR from Winbond is a 2Gb (256M × 8) DDR2 SDRAM organized in 8 banks, supporting DDR2-1066 (7-7-7) timing at 533 MHz clock frequency with 1.8 V supply, CAS latency 3–7, and burst lengths of 4 or 8 - deployed in embedded computing, industrial HMIs, and legacy networking equipment requiring JEDEC-compliant DDR2 memory.

For engineers reviewing the W972GG8KS-18 TR datasheet, W972GG8KS-18 TR pinout, W972GG8KS-18 TR application, or W972GG8KS-18 TR equivalent, key selection considerations include tRCD = 13.125 ns, ODT support, OCD impedance calibration, SSTL_18 interface compliance, and WBGA-60 package compatibility with DDR2 controller timing margins.

Technical Context

This DDR2 SDRAM implements a double-data-rate architecture synchronized to differential CLK/CLK inputs, with DLL-aligned DQ/DQS timing and source-synchronous read/write data strobes. It supports posted CAS (AL = 0–2), auto-precharge, on-die termination (ODT), and off-chip driver (OCD) impedance adjustment for signal integrity.

Functional operation includes bank-interleaved burst reads/writes, self-refresh and power-down modes (precharged/active), programmable write latency (WL = RL − 1), and extended mode registers (EMR1–EMR3) for configuring DLL enable/disable, RDQS/DQS mode, and ODT resistance values - all compliant with JEDEC JESD79-2F.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (32M × 8 banks × 8 bits), enabling 256 MB byte-addressable capacity per device.
Data Rate	1066 Mb/s/pin (DDR2-1066), requiring 533 MHz differential clock input for full-speed operation.
CAS Latency (CL)	Programmable CL = 3–7; at -18 speed grade, CL = 7 yields tCK = 1.875 ns (533 MHz).
Burst Length	Configurable BL = 4 or 8; supports sequential or interleaved access patterns without command overhead.
Supply Voltage	VDD/VDDQ/VDDL = 1.8 V ± 0.1 V; strict tolerance required for stable DLL lock and OCD calibration.
On-Die Termination	ODT pin-controlled (registered HIGH), providing dynamic termination resistance during reads/writes to reduce stub reflections.
Interface Standard	SSTL_18 I/O standard with differential CLK/CLK and DQS/DQS; mandates matched trace routing and VREF = VDDQ/2.
Refresh Interval	tREFI = 7.8 μs at 0–85°C; requires 8192 refresh commands every 64 ms for full array retention.

Pinout & Package

W972GG8KS-18 TR is packaged in a RoHS-compliant, lead-free WBGA-60 (8 mm × 9.5 mm, 0.8 mm pitch) ball grid array. Ball layout follows JEDEC-standard DDR2 SDRAM footprint with dedicated VDDQ/VSSQ isolation for DQ noise immunity and separate VDDL/VSSDL for DLL power integrity.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	Row address (A0–A14), column address (A0–A9), and auto-precharge bit (A10); A12–A14 also used for EMR configuration.
BA0–BA2	Bank Select	Selects one of eight internal banks for ACTIVE, READ, WRITE, or PRECHARGE commands.
DQ0–DQ7	Data I/O	8-bit bidirectional data bus; SSTL_18 compatible with 1.8 V swing and controlled slew rate.
DQS / DQS	Differential Data Strobe	Source-synchronous strobe: edge-aligned on read, center-aligned on write; enabled via EMR(1)[A10] = 0.
CS, RAS, CAS, WE	Command Inputs	Define command opcode on each rising CLK edge; CS enables rank selection in multi-rank systems.
ODT	On-Die Termination Control	Registered HIGH enables internal termination resistor (75 Ω or 150 Ω) during read/write cycles to suppress reflections.
CLK / CLK	Differential Clock Input	Timing reference for all address/control latching and DLL phase alignment; crossing point defines sampling edge.
CKE	Clock Enable	Gates internal clocking; LOW disables DLL and enters power-down; HIGH resumes synchronous operation.
DM / RDQS	Data Mask / Read Strobe	DM masks write data on both DQS edges; RDQS replaces DM when enabled via EMR(1)[A11] = 1.
VREF	Input Reference Voltage	Tracks VDDQ/2 ± 30 mV; critical for SSTL_18 input threshold stability and timing margin.

Key Features

Feature	Design Value
Off-Chip Driver (OCD) Calibration	Enables precise output driver impedance tuning (±10%) via EMR(1) to match PCB trace Z₀ and minimize signal distortion.
Programmable Additive Latency (AL)	AL = 0–2 allows pipelining of CAS after ACT command, improving command bus efficiency in high-bandwidth controllers.
Auto-Precharge Support	Embedded precharge triggered automatically after burst read/write, reducing command overhead and simplifying controller logic.
DLL-Enhanced Timing Alignment	Digital delay-locked loop aligns DQ and DQS edges to CLK crossing, ensuring setup/hold compliance across voltage/temperature.
Multi-Temperature Refresh Modes	Supports extended tREFI = 3.9 μs at 85–95°C via EMR(2)[A7] = 1, enabling reliable operation in industrial thermal environments.
Power-Down Flexibility	Two low-power states: Precharged Power Down (all banks idle) and Active Power Down (one bank active), reducing IDD6 to ≤10 mA.

Applications

Industrial HMI Systems	Legacy Networking Routers
Use Scenario: Touch-enabled panel PCs running real-time Linux with frame buffer graphics and Ethernet stack. IC Role / Device Role / Timing Role: Primary system memory for CPU instruction/data caching and display buffer storage; operates at DDR2-1066 with CL=5 for balanced latency/bandwidth. Use Value: WBGA-60 footprint enables compact 2-layer PCB layout; ODT and OCD reduce need for external termination resistors and improve signal integrity over 4-layer backplanes.	Use Scenario: Fixed-configuration Layer 3 switches with integrated packet buffering and QoS processing. IC Role / Device Role / Timing Role: Packet buffer memory interfaced to ASIC-based switch fabric; uses burst length 8 and auto-precharge for efficient store-and-forward operations. Use Value: tRCD = 13.125 ns and tRP = 13.125 ns meet ASIC controller timing budgets; self-refresh mode maintains packet queue state during low-power standby.
Medical Diagnostic Terminals	Automated Test Equipment (ATE)
Use Scenario: Portable ultrasound imaging units with FPGA-accelerated beamforming and DICOM export. IC Role / Device Role / Timing Role: Frame buffer and FIFO memory for real-time image streaming; configured with CL=3 and BL=4 for minimal read latency. Use Value: SSTL_18 interface ensures compatibility with Xilinx Spartan-6 FPGA memory controllers; VDDQ/VSSQ isolation prevents analog front-end noise coupling.	Use Scenario: High-channel-count boundary scan testers requiring deterministic memory access for pattern generation. IC Role / Device Role / Timing Role: Pattern storage memory synchronized to tester clock domain; uses posted CAS (AL=2) to maximize command throughput during vector bursts. Use Value: DLL lock stability over temperature ensures consistent tAC and tOH across 0–85°C operating range; OCD calibration compensates for PCB aging effects.

Industrial HMI Systems

Legacy Networking Routers

Use Scenario: Touch-enabled panel PCs running real-time Linux with frame buffer graphics and Ethernet stack.

IC Role / Device Role / Timing Role: Primary system memory for CPU instruction/data caching and display buffer storage; operates at DDR2-1066 with CL=5 for balanced latency/bandwidth.

Use Value: WBGA-60 footprint enables compact 2-layer PCB layout; ODT and OCD reduce need for external termination resistors and improve signal integrity over 4-layer backplanes.

Use Scenario: Fixed-configuration Layer 3 switches with integrated packet buffering and QoS processing.

IC Role / Device Role / Timing Role: Packet buffer memory interfaced to ASIC-based switch fabric; uses burst length 8 and auto-precharge for efficient store-and-forward operations.

Use Value: tRCD = 13.125 ns and tRP = 13.125 ns meet ASIC controller timing budgets; self-refresh mode maintains packet queue state during low-power standby.

Medical Diagnostic Terminals

Automated Test Equipment (ATE)

Use Scenario: Portable ultrasound imaging units with FPGA-accelerated beamforming and DICOM export.

IC Role / Device Role / Timing Role: Frame buffer and FIFO memory for real-time image streaming; configured with CL=3 and BL=4 for minimal read latency.

Use Value: SSTL_18 interface ensures compatibility with Xilinx Spartan-6 FPGA memory controllers; VDDQ/VSSQ isolation prevents analog front-end noise coupling.

Use Scenario: High-channel-count boundary scan testers requiring deterministic memory access for pattern generation.

IC Role / Device Role / Timing Role: Pattern storage memory synchronized to tester clock domain; uses posted CAS (AL=2) to maximize command throughput during vector bursts.

Use Value: DLL lock stability over temperature ensures consistent tAC and tOH across 0–85°C operating range; OCD calibration compensates for PCB aging effects.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR2 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT47H128M8HQ-37E:A	1 Gb density (128M × 8), DDR2-800 (6-6-6), FBGA-60, same VDD/VDDQ but no OCD calibration.	Lower bandwidth and capacity; suitable only where 1 Gb suffices and controller lacks OCD programming support.	Select if cost sensitivity outweighs need for DDR2-1066 speed or OCD tuning capability.
IS42S16160F-6BL	256M × 16 (512 Mb), DDR2-667 (5-5-5), TSOP-54, 16-bit bus width, no ODT pin control.	Wider data bus but slower speed and different package; requires board redesign and controller reconfiguration.	Choose only for space-constrained designs accepting reduced speed and fixed termination.

Compared with MT47H128M8HQ-37E:A and IS42S16160F-6BL, W972GG8KS-18 TR delivers higher bandwidth (1066 Mb/s vs. 800/667), on-die termination control for dynamic signal integrity management, and OCD calibration for long-term impedance matching - making it optimal for new designs targeting DDR2-1066 performance within industrial thermal envelopes.

Availability

W972GG8KS-18 TR is available at Aetrix Electronics and suitable for industrial HMIs, legacy networking routers, and medical diagnostic terminals requiring stable component supply, long-lifecycle support, and JEDEC DDR2-1066 compliance.

Supply support for W972GG8KS-18 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash, and logic ICs, with global distribution and automotive-grade qualification capabilities.

The W972GG8KS series belongs to Winbond's industrial-grade DDR2 SDRAM product line, designed specifically for extended-temperature embedded systems where reliability, JEDEC compliance, and long-term supply continuity are critical.

FAQ

What is the maximum clock frequency supported by W972GG8KS-18 TR?

W972GG8KS-18 TR supports a maximum clock frequency of 533 MHz (tCK = 1.875 ns), enabling DDR2-1066 data rates of 1066 Mb/s per pin. This speed grade is validated under JEDEC JESD79-2F conditions with CL = 7, tRCD = 13.125 ns, and tRP = 13.125 ns at 0–85°C ambient. Operation above this frequency violates AC timing specifications and may cause data corruption.

Does W972GG8KS-18 TR support on-die termination (ODT)?

Yes, W972GG8KS-18 TR supports ODT via a dedicated ODT pin (ball F9). When registered HIGH during read or write cycles, it enables internal termination resistors (75 Ω or 150 Ω, configurable via EMR) to suppress signal reflections on DQ/DQS lines. ODT must be disabled (LOW) during initialization and power-up sequences to ensure proper DLL lock and OCD calibration.

What package type and dimensions does W972GG8KS-18 TR use?

W972GG8KS-18 TR uses a lead-free, RoHS-compliant WBGA-60 package measuring 8 mm × 9.5 mm with 0.8 mm ball pitch. The layout features isolated VDDQ/VSSQ and VDDL/VSSDL power domains to minimize switching noise coupling between data and DLL circuits - critical for maintaining tAC and tOH margins in high-speed DDR2 interfaces.

How is OCD calibration performed on W972GG8KS-18 TR?

OCD calibration on W972GG8KS-18 TR is initiated after power-up and DLL enable by issuing an OCD calibration command sequence (EMRS to EMR(1) with A9=A8=A7=HIGH), followed by execution of the calibration routine requiring ≥200 clock cycles. The result is stored in EMR(1) and adjusts output driver impedance to match target PCB trace impedance, improving signal integrity without external resistors.

Can W972GG8KS-18 TR operate at 95°C case temperature?

W972GG8KS-18 TR is rated for 0–85°C case temperature per its speed grade (-18). For operation up to 95°C, Winbond specifies doubling the refresh rate (tREFI = 3.9 μs) and enabling high-temp self-refresh via EMR(2)[A7] = 1. However, this requires controller firmware support and validation; the -25I variant is certified for full-spec operation across -40–95°C and is recommended for sustained 95°C use.

W972GG8KS-18 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 60-TFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR2

Memory Size:: 2Gbit

Memory Organization:: 256M x 8

Memory Interface:: -

Clock Frequency:: 533 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 58.125 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 60-WBGA (8x9.5)

W972GG8KS-18 TR FAQ

1.How can I place an order for W972GG8KS-18 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W972GG8KS-18 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W972GG8KS-18 TR reliable?

The price and inventory of W972GG8KS-18 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W972GG8KS-18 TR is usually 5 days.

3.What payment methods are accepted for W972GG8KS-18 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W972GG8KS-18 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W972GG8KS-18 TR?

W972GG8KS-18 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W972GG8KS-18 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W972GG8KS-18 TR?

For technical support, including W972GG8KS-18 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W972GG8KS-18 TR requirements.

6.How does Aetrix verify that W972GG8KS-18 TR is sourced from the original manufacturer or authorized distributors?

All W972GG8KS-18 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W972GG8KS-18 TR meets industry standards.

7.What is the process for return or replacement of W972GG8KS-18 TR?

All W972GG8KS-18 TR units undergo pre-shipment inspection (PSI). If there is an issue with W972GG8KS-18 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W972GG8KS-18 TR part is unused and in its original packaging.

Return procedure for W972GG8KS-18 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…